TW506143B - Process for producing p-type gallium nitride-based compound semiconductor, process for producing gallium nitride-based compound semiconductor luminescent element, and gallium nitride-based compound semiconductor luminescent element - Google Patents

Process for producing p-type gallium nitride-based compound semiconductor, process for producing gallium nitride-based compound semiconductor luminescent element, and gallium nitride-based compound semiconductor luminescent element Download PDF

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Publication number
TW506143B
TW506143B TW090116562A TW90116562A TW506143B TW 506143 B TW506143 B TW 506143B TW 090116562 A TW090116562 A TW 090116562A TW 90116562 A TW90116562 A TW 90116562A TW 506143 B TW506143 B TW 506143B
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TW
Taiwan
Prior art keywords
layer
based compound
compound semiconductor
gallium nitride
type
Prior art date
Application number
TW090116562A
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English (en)
Chinese (zh)
Inventor
Hasayuki Miki
Mineo Okuyama
Masaharu Oshima
Hiroshi Fujioka
Ichitaro Waki
Original Assignee
Showa Denko Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application granted granted Critical
Publication of TW506143B publication Critical patent/TW506143B/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H10H20/8252—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/016—Thermal treatments
    • H10H20/0165—Thermal treatments for recrystallisation

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  • Led Devices (AREA)
  • Chemical Vapour Deposition (AREA)
TW090116562A 2000-07-10 2001-07-06 Process for producing p-type gallium nitride-based compound semiconductor, process for producing gallium nitride-based compound semiconductor luminescent element, and gallium nitride-based compound semiconductor luminescent element TW506143B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000207701A JP4652530B2 (ja) 2000-07-10 2000-07-10 窒化ガリウム系化合物半導体発光素子の作製方法

Publications (1)

Publication Number Publication Date
TW506143B true TW506143B (en) 2002-10-11

Family

ID=18704419

Family Applications (1)

Application Number Title Priority Date Filing Date
TW090116562A TW506143B (en) 2000-07-10 2001-07-06 Process for producing p-type gallium nitride-based compound semiconductor, process for producing gallium nitride-based compound semiconductor luminescent element, and gallium nitride-based compound semiconductor luminescent element

Country Status (3)

Country Link
EP (1) EP1172867A3 (enExample)
JP (1) JP4652530B2 (enExample)
TW (1) TW506143B (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4581198B2 (ja) * 2000-08-10 2010-11-17 ソニー株式会社 窒化物化合物半導体層の熱処理方法及び半導体素子の製造方法
AUPS240402A0 (en) 2002-05-17 2002-06-13 Macquarie Research Limited Gallium nitride
KR101081158B1 (ko) 2004-07-08 2011-11-07 엘지이노텍 주식회사 발광 다이오드 제조방법
JP4694395B2 (ja) 2006-03-22 2011-06-08 日本オプネクスト株式会社 窒化物半導体発光素子及びその製造方法
JP2007311375A (ja) * 2006-05-16 2007-11-29 Showa Denko Kk ｐ型ＩＩＩ−Ｖ族化合物半導体の作製方法及び発光素子の作製方法。
JP2008034587A (ja) * 2006-07-28 2008-02-14 Sony Corp 半導体レーザの製造方法、半導体素子の製造方法および素子の製造方法
US7670933B1 (en) * 2007-10-03 2010-03-02 Sandia Corporation Nanowire-templated lateral epitaxial growth of non-polar group III nitrides
EP2881982B1 (en) 2013-12-05 2019-09-04 IMEC vzw Method for fabricating cmos compatible contact layers in semiconductor devices
JP6131908B2 (ja) * 2014-05-08 2017-05-24 豊田合成株式会社 Ｉｉｉ族窒化物半導体の製造方法、発光素子の製造方法
CN113832453A (zh) * 2021-11-03 2021-12-24 聚灿光电科技（宿迁）有限公司 一种mocvd放气装置及具有其的mocvd装置
EP4231335B1 (en) * 2022-02-16 2024-06-19 Siltronic AG A heteroepitaxial wafer for the deposition of gallium nitride

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07211903A (ja) * 1993-12-02 1995-08-11 Fujitsu Ltd 半導体装置の製造方法
JPH0832115A (ja) * 1994-07-19 1996-02-02 Sharp Corp 電極構造およびその製造方法
JP3620926B2 (ja) * 1995-06-16 2005-02-16 豊田合成株式会社 ｐ伝導形３族窒化物半導体の電極及び電極形成方法及び素子
JP4018177B2 (ja) * 1996-09-06 2007-12-05 株式会社東芝 窒化ガリウム系化合物半導体発光素子
JP3509514B2 (ja) * 1997-11-13 2004-03-22 豊田合成株式会社 窒化ガリウム系化合物半導体の製造方法
JPH11177134A (ja) * 1997-12-15 1999-07-02 Sharp Corp 半導体素子の製造方法及び半導体素子、並びに発光素子の製造方法及び発光素子
JPH11354458A (ja) * 1998-06-11 1999-12-24 Matsushita Electron Corp ｐ型ＩＩＩ−Ｖ族窒化物半導体およびその製造方法
JP3794876B2 (ja) * 1998-09-09 2006-07-12 松下電器産業株式会社 半導体装置の製造方法

Also Published As

Publication number Publication date
EP1172867A2 (en) 2002-01-16
EP1172867A3 (en) 2006-09-06
JP2002026389A (ja) 2002-01-25
JP4652530B2 (ja) 2011-03-16

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