TW503470B - Sputtering apparatus and film forming method - Google Patents
Sputtering apparatus and film forming method Download PDFInfo
- Publication number
- TW503470B TW503470B TW089122692A TW89122692A TW503470B TW 503470 B TW503470 B TW 503470B TW 089122692 A TW089122692 A TW 089122692A TW 89122692 A TW89122692 A TW 89122692A TW 503470 B TW503470 B TW 503470B
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate
- plate
- film
- target
- copper
- Prior art date
Links
- 238000004544 sputter deposition Methods 0.000 title claims abstract description 120
- 238000000034 method Methods 0.000 title claims abstract description 48
- 239000000758 substrate Substances 0.000 claims description 234
- 150000002500 ions Chemical class 0.000 claims description 197
- 238000012545 processing Methods 0.000 claims description 51
- 230000007246 mechanism Effects 0.000 claims description 31
- 239000000463 material Substances 0.000 claims description 24
- 229910052757 nitrogen Inorganic materials 0.000 claims description 24
- 230000000903 blocking effect Effects 0.000 claims description 3
- 238000005477 sputtering target Methods 0.000 claims description 3
- 229910052717 sulfur Inorganic materials 0.000 claims description 2
- PCTMTFRHKVHKIS-BMFZQQSSSA-N (1s,3r,4e,6e,8e,10e,12e,14e,16e,18s,19r,20r,21s,25r,27r,30r,31r,33s,35r,37s,38r)-3-[(2r,3s,4s,5s,6r)-4-amino-3,5-dihydroxy-6-methyloxan-2-yl]oxy-19,25,27,30,31,33,35,37-octahydroxy-18,20,21-trimethyl-23-oxo-22,39-dioxabicyclo[33.3.1]nonatriaconta-4,6,8,10 Chemical compound C1C=C2C[C@@H](OS(O)(=O)=O)CC[C@]2(C)[C@@H]2[C@@H]1[C@@H]1CC[C@H]([C@H](C)CCCC(C)C)[C@@]1(C)CC2.O[C@H]1[C@@H](N)[C@H](O)[C@@H](C)O[C@H]1O[C@H]1/C=C/C=C/C=C/C=C/C=C/C=C/C=C/[C@H](C)[C@@H](O)[C@@H](C)[C@H](C)OC(=O)C[C@H](O)C[C@H](O)CC[C@@H](O)[C@H](O)C[C@H](O)C[C@](O)(C[C@H](O)[C@H]2C(O)=O)O[C@H]2C1 PCTMTFRHKVHKIS-BMFZQQSSSA-N 0.000 claims 1
- 238000007599 discharging Methods 0.000 claims 1
- 230000005284 excitation Effects 0.000 claims 1
- 230000005389 magnetism Effects 0.000 claims 1
- 230000004936 stimulating effect Effects 0.000 claims 1
- 230000008569 process Effects 0.000 abstract description 23
- 239000004065 semiconductor Substances 0.000 abstract description 4
- 239000010408 film Substances 0.000 description 184
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 143
- 239000010949 copper Substances 0.000 description 143
- 229910052802 copper Inorganic materials 0.000 description 143
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 91
- 239000010410 layer Substances 0.000 description 55
- 229910052786 argon Inorganic materials 0.000 description 53
- 230000015572 biosynthetic process Effects 0.000 description 47
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 38
- 229910001431 copper ion Inorganic materials 0.000 description 38
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 34
- 238000011049 filling Methods 0.000 description 34
- -1 hafnium nitride Chemical class 0.000 description 33
- 239000007789 gas Substances 0.000 description 29
- 229910052751 metal Inorganic materials 0.000 description 26
- 239000002184 metal Substances 0.000 description 26
- 229910052719 titanium Inorganic materials 0.000 description 26
- 239000010936 titanium Substances 0.000 description 26
- 239000002245 particle Substances 0.000 description 23
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 22
- 229910052710 silicon Inorganic materials 0.000 description 22
- 239000010703 silicon Substances 0.000 description 22
- 229910052782 aluminium Inorganic materials 0.000 description 21
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 21
- 230000002079 cooperative effect Effects 0.000 description 19
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 18
- 238000010438 heat treatment Methods 0.000 description 14
- 230000004888 barrier function Effects 0.000 description 13
- 230000000694 effects Effects 0.000 description 13
- 239000011229 interlayer Substances 0.000 description 12
- 229910000831 Steel Inorganic materials 0.000 description 11
- 238000010586 diagram Methods 0.000 description 11
- 238000009826 distribution Methods 0.000 description 11
- 239000010959 steel Substances 0.000 description 11
- 238000005530 etching Methods 0.000 description 10
- 230000007935 neutral effect Effects 0.000 description 10
- 150000004767 nitrides Chemical class 0.000 description 10
- 238000007667 floating Methods 0.000 description 9
- 238000009713 electroplating Methods 0.000 description 8
- 230000004907 flux Effects 0.000 description 7
- 230000002776 aggregation Effects 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 6
- 230000005684 electric field Effects 0.000 description 6
- 238000012986 modification Methods 0.000 description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 5
- 238000004220 aggregation Methods 0.000 description 5
- 230000007423 decrease Effects 0.000 description 5
- 239000001307 helium Substances 0.000 description 5
- 229910052734 helium Inorganic materials 0.000 description 5
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 5
- 239000001257 hydrogen Substances 0.000 description 5
- 229910052739 hydrogen Inorganic materials 0.000 description 5
- 238000009413 insulation Methods 0.000 description 5
- 238000002955 isolation Methods 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 238000012546 transfer Methods 0.000 description 5
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 4
- 229910052735 hafnium Inorganic materials 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 230000003068 static effect Effects 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 239000006185 dispersion Substances 0.000 description 3
- 239000000428 dust Substances 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000005121 nitriding Methods 0.000 description 3
- 238000004806 packaging method and process Methods 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 231100000572 poisoning Toxicity 0.000 description 3
- 230000000607 poisoning effect Effects 0.000 description 3
- 229910052704 radon Inorganic materials 0.000 description 3
- SYUHGPGVQRZVTB-UHFFFAOYSA-N radon atom Chemical compound [Rn] SYUHGPGVQRZVTB-UHFFFAOYSA-N 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- 239000013077 target material Substances 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- 241001331845 Equus asinus x caballus Species 0.000 description 2
- LCKIEQZJEYYRIY-UHFFFAOYSA-N Titanium ion Chemical compound [Ti+4] LCKIEQZJEYYRIY-UHFFFAOYSA-N 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- AFYPFACVUDMOHA-UHFFFAOYSA-N chlorotrifluoromethane Chemical compound FC(F)(F)Cl AFYPFACVUDMOHA-UHFFFAOYSA-N 0.000 description 2
- 239000000498 cooling water Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 230000009931 harmful effect Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 238000005478 sputtering type Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052727 yttrium Inorganic materials 0.000 description 2
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 2
- 239000005749 Copper compound Substances 0.000 description 1
- 229910052692 Dysprosium Inorganic materials 0.000 description 1
- 241000530268 Lycaena heteronea Species 0.000 description 1
- 229910002651 NO3 Inorganic materials 0.000 description 1
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 1
- 241001674048 Phthiraptera Species 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- XLWMYKCPNRBIDK-UHFFFAOYSA-N azanylidyneytterbium Chemical compound [Yb]#N XLWMYKCPNRBIDK-UHFFFAOYSA-N 0.000 description 1
- AJXBBNUQVRZRCZ-UHFFFAOYSA-N azanylidyneyttrium Chemical compound [Y]#N AJXBBNUQVRZRCZ-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 150000001879 copper Chemical class 0.000 description 1
- 150000001880 copper compounds Chemical class 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- KBQHZAAAGSGFKK-UHFFFAOYSA-N dysprosium atom Chemical compound [Dy] KBQHZAAAGSGFKK-UHFFFAOYSA-N 0.000 description 1
- 238000002309 gasification Methods 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000005596 ionic collisions Effects 0.000 description 1
- IDBFBDSKYCUNPW-UHFFFAOYSA-N lithium nitride Chemical compound [Li]N([Li])[Li] IDBFBDSKYCUNPW-UHFFFAOYSA-N 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 231100000252 nontoxic Toxicity 0.000 description 1
- 230000003000 nontoxic effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000002574 poison Substances 0.000 description 1
- 231100000614 poison Toxicity 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000003351 stiffener Substances 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 230000002459 sustained effect Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 229910021341 titanium silicide Inorganic materials 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- 230000007723 transport mechanism Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3435—Applying energy to the substrate during sputtering
- C23C14/345—Applying energy to the substrate during sputtering using substrate bias
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/046—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3457—Sputtering using other particles than noble gas ions
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32697—Electrostatic control
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31029899 | 1999-10-29 | ||
| JP2000166059A JP4021601B2 (ja) | 1999-10-29 | 2000-06-02 | スパッタ装置および成膜方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW503470B true TW503470B (en) | 2002-09-21 |
Family
ID=26566260
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW089122692A TW503470B (en) | 1999-10-29 | 2000-10-27 | Sputtering apparatus and film forming method |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US6423192B1 (enExample) |
| JP (1) | JP4021601B2 (enExample) |
| KR (1) | KR100400968B1 (enExample) |
| TW (1) | TW503470B (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI495751B (enExample) * | 2013-07-15 | 2015-08-11 |
Families Citing this family (65)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6355183B1 (en) * | 1998-09-04 | 2002-03-12 | Matsushita Electric Industrial Co., Ltd. | Apparatus and method for plasma etching |
| US6610184B2 (en) | 2001-11-14 | 2003-08-26 | Applied Materials, Inc. | Magnet array in conjunction with rotating magnetron for plasma sputtering |
| US20030116427A1 (en) * | 2001-08-30 | 2003-06-26 | Applied Materials, Inc. | Self-ionized and inductively-coupled plasma for sputtering and resputtering |
| US8696875B2 (en) | 1999-10-08 | 2014-04-15 | Applied Materials, Inc. | Self-ionized and inductively-coupled plasma for sputtering and resputtering |
| WO2003042424A1 (en) * | 2000-10-10 | 2003-05-22 | Applied Materials, Inc. | Self-ionized and inductively-coupled plasma for sputtering and resputtering |
| US10047430B2 (en) | 1999-10-08 | 2018-08-14 | Applied Materials, Inc. | Self-ionized and inductively-coupled plasma for sputtering and resputtering |
| US6627050B2 (en) * | 2000-07-28 | 2003-09-30 | Applied Materials, Inc. | Method and apparatus for depositing a tantalum-containing layer on a substrate |
| JP4703828B2 (ja) * | 2000-09-07 | 2011-06-15 | 株式会社アルバック | スパッタリング装置及び薄膜製造方法 |
| JP4503194B2 (ja) * | 2001-02-16 | 2010-07-14 | アプライド マテリアルズ インコーポレイテッド | 気相堆積装置及び方法 |
| US7482757B2 (en) * | 2001-03-23 | 2009-01-27 | Tokyo Electron Limited | Inductively coupled high-density plasma source |
| US6537928B1 (en) * | 2002-02-19 | 2003-03-25 | Asm Japan K.K. | Apparatus and method for forming low dielectric constant film |
| US7041201B2 (en) * | 2001-11-14 | 2006-05-09 | Applied Materials, Inc. | Sidewall magnet improving uniformity of inductively coupled plasma and shields used therewith |
| US7122844B2 (en) * | 2002-05-13 | 2006-10-17 | Cree, Inc. | Susceptor for MOCVD reactor |
| US7504006B2 (en) | 2002-08-01 | 2009-03-17 | Applied Materials, Inc. | Self-ionized and capacitively-coupled plasma for sputtering and resputtering |
| US6846396B2 (en) * | 2002-08-08 | 2005-01-25 | Applied Materials, Inc. | Active magnetic shielding |
| WO2004015862A2 (en) * | 2002-08-13 | 2004-02-19 | Trikon Technologies Limited | Acoustic resonators |
| US8366830B2 (en) * | 2003-03-04 | 2013-02-05 | Cree, Inc. | Susceptor apparatus for inverted type MOCVD reactor |
| KR100784381B1 (ko) | 2004-07-23 | 2007-12-11 | 삼성전자주식회사 | 증착 장치 및 방법 |
| US7294574B2 (en) * | 2004-08-09 | 2007-11-13 | Applied Materials, Inc. | Sputter deposition and etching of metallization seed layer for overhang and sidewall improvement |
| US7351656B2 (en) * | 2005-01-21 | 2008-04-01 | Kabushiki Kaihsa Toshiba | Semiconductor device having oxidized metal film and manufacture method of the same |
| JP4762187B2 (ja) * | 2007-03-28 | 2011-08-31 | 株式会社東芝 | マグネトロンスパッタリング装置および半導体装置の製造方法 |
| KR100882906B1 (ko) * | 2007-04-17 | 2009-02-10 | 삼성모바일디스플레이주식회사 | 스퍼터링 장치 |
| JP2009182140A (ja) * | 2008-01-30 | 2009-08-13 | Tokyo Electron Ltd | 薄膜の形成方法、プラズマ成膜装置及び記憶媒体 |
| JP5118532B2 (ja) * | 2008-03-28 | 2013-01-16 | 新明和工業株式会社 | スパッタリング装置およびスパッタリング方法 |
| JP2009256747A (ja) * | 2008-04-18 | 2009-11-05 | Canon Anelva Corp | マグネトロンスパッタリング装置及び薄膜の製造法 |
| KR20100032644A (ko) * | 2008-09-18 | 2010-03-26 | 삼성전자주식회사 | 선택적 플라즈마 처리를 이용한 반도체 소자의 금속배선 형성방법 |
| US20100096253A1 (en) * | 2008-10-22 | 2010-04-22 | Applied Materials, Inc | Pvd cu seed overhang re-sputtering with enhanced cu ionization |
| KR101593544B1 (ko) * | 2008-12-15 | 2016-02-15 | 가부시키가이샤 알박 | 스퍼터링 장치 및 스퍼터링 방법 |
| GB0901157D0 (en) * | 2009-01-26 | 2009-03-11 | Aviza Technology Ltd | A method of plasma vapour deposition |
| JP5347868B2 (ja) * | 2009-09-24 | 2013-11-20 | 東京エレクトロン株式会社 | 載置台構造及びプラズマ成膜装置 |
| JP2011179068A (ja) * | 2010-03-01 | 2011-09-15 | Ulvac Japan Ltd | 金属薄膜の形成方法 |
| WO2011130092A1 (en) * | 2010-04-14 | 2011-10-20 | The Regents Of The University Of California | Method and apparatus for sputtering with a plasma lens |
| JP5654939B2 (ja) * | 2011-04-20 | 2015-01-14 | 株式会社アルバック | 成膜装置 |
| US9279179B2 (en) * | 2012-02-06 | 2016-03-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | Multi coil target design |
| US9640359B2 (en) * | 2012-08-09 | 2017-05-02 | Vactronix Scientific, Inc. | Inverted cylindrical magnetron (ICM) system and methods of use |
| KR20160003871U (ko) | 2015-04-30 | 2016-11-09 | 에스엘 주식회사 | 차량용 램프 |
| CN109473331B (zh) * | 2017-09-08 | 2022-11-25 | 北京北方华创微电子装备有限公司 | 腔室屏蔽装置和半导体处理腔 |
| US10510575B2 (en) | 2017-09-20 | 2019-12-17 | Applied Materials, Inc. | Substrate support with multiple embedded electrodes |
| JP6998239B2 (ja) * | 2018-03-01 | 2022-01-18 | 株式会社アルバック | 成膜装置 |
| US10555412B2 (en) | 2018-05-10 | 2020-02-04 | Applied Materials, Inc. | Method of controlling ion energy distribution using a pulse generator with a current-return output stage |
| WO2020090164A1 (ja) * | 2018-10-30 | 2020-05-07 | 株式会社アルバック | 真空処理装置 |
| US11476145B2 (en) * | 2018-11-20 | 2022-10-18 | Applied Materials, Inc. | Automatic ESC bias compensation when using pulsed DC bias |
| KR20250100790A (ko) | 2019-01-22 | 2025-07-03 | 어플라이드 머티어리얼스, 인코포레이티드 | 펄스 전압 파형을 제어하기 위한 피드백 루프 |
| US11508554B2 (en) | 2019-01-24 | 2022-11-22 | Applied Materials, Inc. | High voltage filter assembly |
| US11462388B2 (en) | 2020-07-31 | 2022-10-04 | Applied Materials, Inc. | Plasma processing assembly using pulsed-voltage and radio-frequency power |
| US11798790B2 (en) | 2020-11-16 | 2023-10-24 | Applied Materials, Inc. | Apparatus and methods for controlling ion energy distribution |
| US11901157B2 (en) | 2020-11-16 | 2024-02-13 | Applied Materials, Inc. | Apparatus and methods for controlling ion energy distribution |
| US11495470B1 (en) | 2021-04-16 | 2022-11-08 | Applied Materials, Inc. | Method of enhancing etching selectivity using a pulsed plasma |
| US11791138B2 (en) | 2021-05-12 | 2023-10-17 | Applied Materials, Inc. | Automatic electrostatic chuck bias compensation during plasma processing |
| US11948780B2 (en) | 2021-05-12 | 2024-04-02 | Applied Materials, Inc. | Automatic electrostatic chuck bias compensation during plasma processing |
| US11967483B2 (en) | 2021-06-02 | 2024-04-23 | Applied Materials, Inc. | Plasma excitation with ion energy control |
| US12148595B2 (en) | 2021-06-09 | 2024-11-19 | Applied Materials, Inc. | Plasma uniformity control in pulsed DC plasma chamber |
| US20220399185A1 (en) | 2021-06-09 | 2022-12-15 | Applied Materials, Inc. | Plasma chamber and chamber component cleaning methods |
| US11810760B2 (en) | 2021-06-16 | 2023-11-07 | Applied Materials, Inc. | Apparatus and method of ion current compensation |
| US11569066B2 (en) | 2021-06-23 | 2023-01-31 | Applied Materials, Inc. | Pulsed voltage source for plasma processing applications |
| US11776788B2 (en) | 2021-06-28 | 2023-10-03 | Applied Materials, Inc. | Pulsed voltage boost for substrate processing |
| CN115679271B (zh) * | 2021-07-22 | 2024-09-20 | 北京北方华创微电子装备有限公司 | 半导体工艺腔室 |
| US11476090B1 (en) | 2021-08-24 | 2022-10-18 | Applied Materials, Inc. | Voltage pulse time-domain multiplexing |
| US12106938B2 (en) | 2021-09-14 | 2024-10-01 | Applied Materials, Inc. | Distortion current mitigation in a radio frequency plasma processing chamber |
| US11694876B2 (en) | 2021-12-08 | 2023-07-04 | Applied Materials, Inc. | Apparatus and method for delivering a plurality of waveform signals during plasma processing |
| US11972924B2 (en) | 2022-06-08 | 2024-04-30 | Applied Materials, Inc. | Pulsed voltage source for plasma processing applications |
| US12315732B2 (en) | 2022-06-10 | 2025-05-27 | Applied Materials, Inc. | Method and apparatus for etching a semiconductor substrate in a plasma etch chamber |
| US12272524B2 (en) | 2022-09-19 | 2025-04-08 | Applied Materials, Inc. | Wideband variable impedance load for high volume manufacturing qualification and on-site diagnostics |
| US12111341B2 (en) | 2022-10-05 | 2024-10-08 | Applied Materials, Inc. | In-situ electric field detection method and apparatus |
| WO2025192353A1 (ja) * | 2024-03-11 | 2025-09-18 | 東京エレクトロン株式会社 | Ｐｖｄ成膜方法及びｐｖｄ成膜装置 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54149338A (en) | 1978-05-15 | 1979-11-22 | Anelva Corp | Thin film forming method by sputtering |
| JP2515731B2 (ja) | 1985-10-25 | 1996-07-10 | 株式会社日立製作所 | 薄膜形成装置および薄膜形成方法 |
| CZ281073B6 (cs) | 1993-09-03 | 1996-06-12 | Fyzikální ústav AVČR | Způsob rozprašování materiálu katody |
| JP2914644B2 (ja) | 1993-09-22 | 1999-07-05 | アネルバ株式会社 | 集積回路の配線方法及び集積回路における穴又は溝の埋め込み配線方法並びにマルチチャンバー基板処理装置 |
| JP2912181B2 (ja) | 1995-02-28 | 1999-06-28 | 広島日本電気株式会社 | スパッタリング装置 |
| JP2904263B2 (ja) * | 1995-12-04 | 1999-06-14 | 日本電気株式会社 | スパッタ装置 |
| JPH09256149A (ja) | 1996-03-22 | 1997-09-30 | Tokyo Electron Ltd | スパッタリング装置およびスパッタリング方法 |
| JP3957810B2 (ja) | 1997-03-27 | 2007-08-15 | 株式会社アルバック | 銅薄膜形成方法 |
| US6692617B1 (en) | 1997-05-08 | 2004-02-17 | Applied Materials, Inc. | Sustained self-sputtering reactor having an increased density plasma |
| US5897752A (en) | 1997-05-20 | 1999-04-27 | Applied Materials, Inc. | Wafer bias ring in a sustained self-sputtering reactor |
| JPH111770A (ja) * | 1997-06-06 | 1999-01-06 | Anelva Corp | スパッタリング装置及びスパッタリング方法 |
-
2000
- 2000-06-02 JP JP2000166059A patent/JP4021601B2/ja not_active Expired - Fee Related
- 2000-10-27 US US09/697,442 patent/US6423192B1/en not_active Expired - Fee Related
- 2000-10-27 TW TW089122692A patent/TW503470B/zh not_active IP Right Cessation
- 2000-10-28 KR KR10-2000-0063763A patent/KR100400968B1/ko not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI495751B (enExample) * | 2013-07-15 | 2015-08-11 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR100400968B1 (ko) | 2003-10-10 |
| JP2001192824A (ja) | 2001-07-17 |
| KR20010051319A (ko) | 2001-06-25 |
| JP4021601B2 (ja) | 2007-12-12 |
| US6423192B1 (en) | 2002-07-23 |
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