TW497308B - Semiconductor light emitting device - Google Patents
Semiconductor light emitting device Download PDFInfo
- Publication number
- TW497308B TW497308B TW090101294A TW90101294A TW497308B TW 497308 B TW497308 B TW 497308B TW 090101294 A TW090101294 A TW 090101294A TW 90101294 A TW90101294 A TW 90101294A TW 497308 B TW497308 B TW 497308B
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- ridge
- semiconductor
- emitting device
- light emitting
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 64
- 150000004767 nitrides Chemical class 0.000 claims abstract description 7
- 150000001875 compounds Chemical class 0.000 claims abstract description 5
- 239000000758 substrate Substances 0.000 claims abstract description 5
- 230000004888 barrier function Effects 0.000 claims description 4
- 239000010410 layer Substances 0.000 claims 14
- 230000000903 blocking effect Effects 0.000 claims 2
- 239000002344 surface layer Substances 0.000 claims 1
- 238000005253 cladding Methods 0.000 abstract description 6
- 229910002601 GaN Inorganic materials 0.000 description 12
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 12
- 239000012535 impurity Substances 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052749 magnesium Inorganic materials 0.000 description 3
- 239000011777 magnesium Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- WMWLMWRWZQELOS-UHFFFAOYSA-N bismuth(III) oxide Inorganic materials O=[Bi]O[Bi]=O WMWLMWRWZQELOS-UHFFFAOYSA-N 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- UMVBXBACMIOFDO-UHFFFAOYSA-N [N].[Si] Chemical compound [N].[Si] UMVBXBACMIOFDO-UHFFFAOYSA-N 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000004043 dyeing Methods 0.000 description 1
- NWLLPIVESIULPG-UHFFFAOYSA-N dysprosium indium Chemical compound [In].[Dy] NWLLPIVESIULPG-UHFFFAOYSA-N 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
- H01S5/3086—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure doping of the active layer
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Geometry (AREA)
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000014289A JP2001210915A (ja) | 2000-01-24 | 2000-01-24 | 半導体発光装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW497308B true TW497308B (en) | 2002-08-01 |
Family
ID=18541767
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW090101294A TW497308B (en) | 2000-01-24 | 2001-01-19 | Semiconductor light emitting device |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US6492660B2 (enExample) |
| JP (1) | JP2001210915A (enExample) |
| KR (1) | KR100763424B1 (enExample) |
| TW (1) | TW497308B (enExample) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| ATE448589T1 (de) * | 2001-04-12 | 2009-11-15 | Nichia Corp | Halbleiterelement aus galliumnitridzusammensetzung |
| US6806197B2 (en) * | 2001-08-07 | 2004-10-19 | Micron Technology, Inc. | Method of forming integrated circuitry, and method of forming a contact opening |
| TWI262606B (en) * | 2001-08-30 | 2006-09-21 | Osram Opto Semiconductors Gmbh | Radiation-emitting semiconductor-element and its production method |
| KR100396675B1 (ko) * | 2001-11-07 | 2003-09-02 | 엘지전자 주식회사 | 플라즈마 처리를 이용한 청색 반도체 레이저의 제조 방법 |
| JP2003332688A (ja) | 2002-03-08 | 2003-11-21 | Toyoda Gosei Co Ltd | Ｉｉｉ族窒化物系化合物半導体レーザ |
| JP4090768B2 (ja) | 2002-03-20 | 2008-05-28 | 株式会社日立製作所 | 半導体レーザ素子 |
| JP4077348B2 (ja) * | 2003-03-17 | 2008-04-16 | 松下電器産業株式会社 | 半導体レーザ装置およびそれを用いた光ピックアップ装置 |
| JP2007012729A (ja) * | 2005-06-29 | 2007-01-18 | Toshiba Corp | 窒化ガリウム系半導体レーザ装置 |
| JP2007109843A (ja) * | 2005-10-13 | 2007-04-26 | Rohm Co Ltd | 半導体レーザ製造方法及び半導体レーザ |
| KR100770440B1 (ko) * | 2006-08-29 | 2007-10-26 | 삼성전기주식회사 | 질화물 반도체 발광소자 |
| JP2008066476A (ja) * | 2006-09-06 | 2008-03-21 | Toshiba Corp | 半導体レーザ装置 |
| TWI384657B (zh) * | 2009-07-15 | 2013-02-01 | Ind Tech Res Inst | 氮化物半導體發光二極體元件 |
| JP5660940B2 (ja) * | 2010-04-27 | 2015-01-28 | 住友電工デバイス・イノベーション株式会社 | 光半導体装置の製造方法 |
| US8933434B2 (en) * | 2013-05-20 | 2015-01-13 | International Business Machines Company | Elemental semiconductor material contact for GaN-based light emitting diodes |
| US9048363B2 (en) * | 2013-05-20 | 2015-06-02 | International Business Machines Corporation | Elemental semiconductor material contact for high indium content InGaN light emitting diodes |
| JP7563696B2 (ja) * | 2020-04-14 | 2024-10-08 | 旭化成株式会社 | 紫外レーザダイオードの製造方法および紫外レーザダイオード |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4018177B2 (ja) * | 1996-09-06 | 2007-12-05 | 株式会社東芝 | 窒化ガリウム系化合物半導体発光素子 |
| CN1964093B (zh) * | 1997-01-09 | 2012-06-27 | 日亚化学工业株式会社 | 氮化物半导体元器件 |
| JPH11251685A (ja) * | 1998-03-05 | 1999-09-17 | Toshiba Corp | 半導体レーザ |
-
2000
- 2000-01-24 JP JP2000014289A patent/JP2001210915A/ja active Pending
-
2001
- 2001-01-19 TW TW090101294A patent/TW497308B/zh not_active IP Right Cessation
- 2001-01-22 US US09/765,580 patent/US6492660B2/en not_active Expired - Lifetime
- 2001-01-22 KR KR1020010003610A patent/KR100763424B1/ko not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| US20010010373A1 (en) | 2001-08-02 |
| KR20010074543A (ko) | 2001-08-04 |
| JP2001210915A (ja) | 2001-08-03 |
| KR100763424B1 (ko) | 2007-10-04 |
| US6492660B2 (en) | 2002-12-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TW497308B (en) | Semiconductor light emitting device | |
| JP3468082B2 (ja) | 窒化物半導体素子 | |
| KR101330898B1 (ko) | 반도체 레이저 다이오드 | |
| TWI303909B (en) | Ridge waveguide semiconductor laser diode | |
| JP5963004B2 (ja) | 窒化物半導体発光素子 | |
| US6185238B1 (en) | Nitride compound semiconductor laser and its manufacturing method | |
| JP2890390B2 (ja) | 窒化ガリウム系化合物半導体発光素子 | |
| US20070014323A1 (en) | Semiconductor device and method for manufacturing the same | |
| JP2002016312A (ja) | 窒化物系半導体素子およびその製造方法 | |
| JPH1084160A (ja) | 窒化ガリウム系化合物半導体発光素子 | |
| JP3754226B2 (ja) | 半導体発光素子 | |
| JP3460581B2 (ja) | 窒化物半導体の成長方法及び窒化物半導体素子 | |
| JP3904709B2 (ja) | 窒化物系半導体発光素子およびその製造方法 | |
| US7095041B2 (en) | High-efficiency light emitting diode | |
| JP2000091708A (ja) | 半導体発光素子 | |
| US12243965B2 (en) | Semiconductor light-emitting element and method of manufacturing semiconductor light-emitting element | |
| JP3224020B2 (ja) | 窒化物半導体発光素子およびその製造方法 | |
| JP3494880B2 (ja) | 窒化物系半導体発光素子のｐ側電極及び窒化物系半導体発光素子 | |
| JPH08274414A (ja) | 窒化物半導体レーザ素子 | |
| JPH07176826A (ja) | 窒化ガリウム系化合物半導体レーザ素子 | |
| JP2000232259A (ja) | 発光素子及びその製造方法 | |
| JP5132739B2 (ja) | 半導体素子 | |
| CN101017959B (zh) | 脊形波导半导体激光二极管 | |
| JP3314641B2 (ja) | 窒化物半導体レーザ素子 | |
| JP3946337B2 (ja) | 窒化ガリウム系化合物半導体レーザ |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GD4A | Issue of patent certificate for granted invention patent | ||
| MM4A | Annulment or lapse of patent due to non-payment of fees |