KR100763424B1 - 반도체 발광 장치 - Google Patents

반도체 발광 장치 Download PDF

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Publication number
KR100763424B1
KR100763424B1 KR1020010003610A KR20010003610A KR100763424B1 KR 100763424 B1 KR100763424 B1 KR 100763424B1 KR 1020010003610 A KR1020010003610 A KR 1020010003610A KR 20010003610 A KR20010003610 A KR 20010003610A KR 100763424 B1 KR100763424 B1 KR 100763424B1
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KR
South Korea
Prior art keywords
layer
ridge
light emitting
semiconductor
emitting device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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KR1020010003610A
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English (en)
Korean (ko)
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KR20010074543A (ko
Inventor
우치다시로
Original Assignee
소니 가부시끼 가이샤
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Application filed by 소니 가부시끼 가이샤 filed Critical 소니 가부시끼 가이샤
Publication of KR20010074543A publication Critical patent/KR20010074543A/ko
Application granted granted Critical
Publication of KR100763424B1 publication Critical patent/KR100763424B1/ko
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3086—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure doping of the active layer

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
KR1020010003610A 2000-01-24 2001-01-22 반도체 발광 장치 Expired - Fee Related KR100763424B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000014289A JP2001210915A (ja) 2000-01-24 2000-01-24 半導体発光装置
JP2000-14289 2000-01-24

Publications (2)

Publication Number Publication Date
KR20010074543A KR20010074543A (ko) 2001-08-04
KR100763424B1 true KR100763424B1 (ko) 2007-10-04

Family

ID=18541767

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020010003610A Expired - Fee Related KR100763424B1 (ko) 2000-01-24 2001-01-22 반도체 발광 장치

Country Status (4)

Country Link
US (1) US6492660B2 (enExample)
JP (1) JP2001210915A (enExample)
KR (1) KR100763424B1 (enExample)
TW (1) TW497308B (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100902109B1 (ko) * 2001-04-12 2009-06-09 니치아 카가쿠 고교 가부시키가이샤 질화 갈륨계 화합물 반도체 소자
US6806197B2 (en) * 2001-08-07 2004-10-19 Micron Technology, Inc. Method of forming integrated circuitry, and method of forming a contact opening
TWI262606B (en) * 2001-08-30 2006-09-21 Osram Opto Semiconductors Gmbh Radiation-emitting semiconductor-element and its production method
KR100396675B1 (ko) * 2001-11-07 2003-09-02 엘지전자 주식회사 플라즈마 처리를 이용한 청색 반도체 레이저의 제조 방법
JP2003332688A (ja) 2002-03-08 2003-11-21 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体レーザ
JP4090768B2 (ja) 2002-03-20 2008-05-28 株式会社日立製作所 半導体レーザ素子
JP4077348B2 (ja) * 2003-03-17 2008-04-16 松下電器産業株式会社 半導体レーザ装置およびそれを用いた光ピックアップ装置
JP2007012729A (ja) * 2005-06-29 2007-01-18 Toshiba Corp 窒化ガリウム系半導体レーザ装置
JP2007109843A (ja) * 2005-10-13 2007-04-26 Rohm Co Ltd 半導体レーザ製造方法及び半導体レーザ
KR100770440B1 (ko) * 2006-08-29 2007-10-26 삼성전기주식회사 질화물 반도체 발광소자
JP2008066476A (ja) * 2006-09-06 2008-03-21 Toshiba Corp 半導体レーザ装置
TWI384657B (zh) * 2009-07-15 2013-02-01 Ind Tech Res Inst 氮化物半導體發光二極體元件
JP5660940B2 (ja) * 2010-04-27 2015-01-28 住友電工デバイス・イノベーション株式会社 光半導体装置の製造方法
US8933434B2 (en) * 2013-05-20 2015-01-13 International Business Machines Company Elemental semiconductor material contact for GaN-based light emitting diodes
US9048363B2 (en) * 2013-05-20 2015-06-02 International Business Machines Corporation Elemental semiconductor material contact for high indium content InGaN light emitting diodes
JP7563696B2 (ja) * 2020-04-14 2024-10-08 旭化成株式会社 紫外レーザダイオードの製造方法および紫外レーザダイオード

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6067309A (en) * 1996-09-06 2000-05-23 Kabushiki Kaisha Toshiba Compound semiconductor light-emitting device of gallium nitride series
US6172382B1 (en) * 1997-01-09 2001-01-09 Nichia Chemical Industries, Ltd. Nitride semiconductor light-emitting and light-receiving devices
US6252894B1 (en) * 1998-03-05 2001-06-26 Kabushiki Kaisha Toshiba Semiconductor laser using gallium nitride series compound semiconductor

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6067309A (en) * 1996-09-06 2000-05-23 Kabushiki Kaisha Toshiba Compound semiconductor light-emitting device of gallium nitride series
US6172382B1 (en) * 1997-01-09 2001-01-09 Nichia Chemical Industries, Ltd. Nitride semiconductor light-emitting and light-receiving devices
US6252894B1 (en) * 1998-03-05 2001-06-26 Kabushiki Kaisha Toshiba Semiconductor laser using gallium nitride series compound semiconductor

Also Published As

Publication number Publication date
US20010010373A1 (en) 2001-08-02
TW497308B (en) 2002-08-01
US6492660B2 (en) 2002-12-10
JP2001210915A (ja) 2001-08-03
KR20010074543A (ko) 2001-08-04

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