TW497253B - Semiconductor integrated circuit device and its manufacturing method - Google Patents
Semiconductor integrated circuit device and its manufacturing method Download PDFInfo
- Publication number
- TW497253B TW497253B TW090116166A TW90116166A TW497253B TW 497253 B TW497253 B TW 497253B TW 090116166 A TW090116166 A TW 090116166A TW 90116166 A TW90116166 A TW 90116166A TW 497253 B TW497253 B TW 497253B
- Authority
- TW
- Taiwan
- Prior art keywords
- region
- channel
- misfet
- angle
- film
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B10/00—Static random access memory [SRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P30/00—Ion implantation into wafers, substrates or parts of devices
- H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B10/00—Static random access memory [SRAM] devices
- H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element
Landscapes
- Semiconductor Memories (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000246505A JP4044721B2 (ja) | 2000-08-15 | 2000-08-15 | 半導体集積回路装置の製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW497253B true TW497253B (en) | 2002-08-01 |
Family
ID=18736803
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW090116166A TW497253B (en) | 2000-08-15 | 2001-07-02 | Semiconductor integrated circuit device and its manufacturing method |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US6613634B2 (https=) |
| JP (1) | JP4044721B2 (https=) |
| KR (1) | KR100547050B1 (https=) |
| TW (1) | TW497253B (https=) |
Cited By (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102136477A (zh) * | 2010-01-27 | 2011-07-27 | 台湾积体电路制造股份有限公司 | 集成电路及其制造方法 |
| US8431453B2 (en) | 2011-03-31 | 2013-04-30 | Taiwan Semiconductor Manufacturing Company, Ltd. | Plasma doping to reduce dielectric loss during removal of dummy layers in a gate structure |
| US8440517B2 (en) | 2010-10-13 | 2013-05-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | FinFET and method of fabricating the same |
| US8461015B2 (en) | 2009-07-08 | 2013-06-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | STI structure and method of forming bottom void in same |
| US8482073B2 (en) | 2010-03-25 | 2013-07-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | Integrated circuit including FINFETs and methods for forming the same |
| US8497528B2 (en) | 2010-05-06 | 2013-07-30 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for fabricating a strained structure |
| US8536658B2 (en) | 2010-11-08 | 2013-09-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Mechanisms for forming ultra shallow junction |
| US8592915B2 (en) | 2011-01-25 | 2013-11-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Doped oxide for shallow trench isolation (STI) |
| US8603924B2 (en) | 2010-10-19 | 2013-12-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods of forming gate dielectric material |
| US8623728B2 (en) | 2009-07-28 | 2014-01-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for forming high germanium concentration SiGe stressor |
| US8629478B2 (en) | 2009-07-31 | 2014-01-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Fin structure for high mobility multiple-gate transistor |
| US8759943B2 (en) | 2010-10-08 | 2014-06-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | Transistor having notched fin structure and method of making the same |
| US8806397B2 (en) | 2010-11-12 | 2014-08-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and device for increasing fin device density for unaligned fins |
| US8877602B2 (en) | 2011-01-25 | 2014-11-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Mechanisms of doping oxide for forming shallow trench isolation |
| US8896055B2 (en) | 2009-09-01 | 2014-11-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Accumulation type FinFET, circuits and fabrication method thereof |
| US8912602B2 (en) | 2009-04-14 | 2014-12-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | FinFETs and methods for forming the same |
| US8957482B2 (en) | 2009-03-31 | 2015-02-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Electrical fuse and related applications |
| US8980719B2 (en) | 2010-04-28 | 2015-03-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods for doping fin field-effect transistors |
| US9040393B2 (en) | 2010-01-14 | 2015-05-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of forming semiconductor structure |
| US9484462B2 (en) | 2009-09-24 | 2016-11-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Fin structure of fin field effect transistor |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6756276B1 (en) * | 2002-09-30 | 2004-06-29 | Advanced Micro Devices, Inc. | Strained silicon MOSFET having improved source/drain extension dopant diffusion resistance and method for its fabrication |
| KR100604911B1 (ko) | 2004-10-20 | 2006-07-28 | 삼성전자주식회사 | 하부전극 콘택을 갖는 반도체 메모리 소자 및 그 제조방법 |
| US20070148893A1 (en) * | 2005-12-22 | 2007-06-28 | Andrei Josiek | Method of forming a doped semiconductor portion |
| JP4812480B2 (ja) * | 2006-03-22 | 2011-11-09 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法 |
| US8305829B2 (en) * | 2009-02-23 | 2012-11-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Memory power gating circuit for controlling internal voltage of a memory array, system and method for controlling the same |
| US8305790B2 (en) * | 2009-03-16 | 2012-11-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Electrical anti-fuse and related applications |
| US8187928B2 (en) | 2010-09-21 | 2012-05-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods of forming integrated circuits |
| US8264021B2 (en) * | 2009-10-01 | 2012-09-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Finfets and methods for forming the same |
| US20110097867A1 (en) * | 2009-10-22 | 2011-04-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of controlling gate thicknesses in forming fusi gates |
| US9048181B2 (en) | 2010-11-08 | 2015-06-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Mechanisms for forming ultra shallow junction |
| US8580675B2 (en) | 2011-03-02 | 2013-11-12 | Texas Instruments Incorporated | Two-track cross-connect in double-patterned structure using rectangular via |
| US10032781B2 (en) * | 2011-07-29 | 2018-07-24 | Renesas Electronics Corporation | Static random access memory device with halo regions having different impurity concentrations |
| TWI430449B (zh) * | 2011-09-29 | 2014-03-11 | 茂達電子股份有限公司 | 橫向堆疊式超級接面功率半導體元件 |
| US10032674B2 (en) | 2015-12-07 | 2018-07-24 | International Business Machines Corporation | Middle of the line subtractive self-aligned contacts |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5372957A (en) * | 1993-07-22 | 1994-12-13 | Taiwan Semiconductor Manufacturing Company | Multiple tilted angle ion implantation MOSFET method |
| JP4198201B2 (ja) * | 1995-06-02 | 2008-12-17 | 株式会社ルネサステクノロジ | 半導体装置 |
| US5534449A (en) * | 1995-07-17 | 1996-07-09 | Micron Technology, Inc. | Methods of forming complementary metal oxide semiconductor (CMOS) integrated circuitry |
| JP3535615B2 (ja) | 1995-07-18 | 2004-06-07 | 株式会社ルネサステクノロジ | 半導体集積回路装置 |
| JPH0955440A (ja) | 1995-08-17 | 1997-02-25 | Sony Corp | 半導体装置及び半導体装置の製造方法 |
| JPH09129753A (ja) | 1995-11-01 | 1997-05-16 | Sony Corp | 半導体装置 |
| KR19990052693A (ko) * | 1997-12-23 | 1999-07-15 | 구본준 | 플래쉬 메모리 셀의 제조방법 |
| JP2000040749A (ja) * | 1998-07-24 | 2000-02-08 | Matsushita Electronics Industry Corp | 半導体装置の製造方法 |
| JP3239853B2 (ja) * | 1998-08-25 | 2001-12-17 | 日本電気株式会社 | 半導体装置の製造方法 |
| KR100431324B1 (ko) * | 1998-09-29 | 2004-06-16 | 주식회사 하이닉스반도체 | 반도체장치의 제조방법 |
-
2000
- 2000-08-15 JP JP2000246505A patent/JP4044721B2/ja not_active Expired - Fee Related
-
2001
- 2001-07-02 TW TW090116166A patent/TW497253B/zh not_active IP Right Cessation
- 2001-08-14 KR KR1020010048954A patent/KR100547050B1/ko not_active Expired - Fee Related
- 2001-08-15 US US09/929,259 patent/US6613634B2/en not_active Expired - Fee Related
Cited By (40)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8957482B2 (en) | 2009-03-31 | 2015-02-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Electrical fuse and related applications |
| US8912602B2 (en) | 2009-04-14 | 2014-12-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | FinFETs and methods for forming the same |
| US8461015B2 (en) | 2009-07-08 | 2013-06-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | STI structure and method of forming bottom void in same |
| US9660082B2 (en) | 2009-07-28 | 2017-05-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Integrated circuit transistor structure with high germanium concentration SiGe stressor |
| US8623728B2 (en) | 2009-07-28 | 2014-01-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for forming high germanium concentration SiGe stressor |
| US8629478B2 (en) | 2009-07-31 | 2014-01-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Fin structure for high mobility multiple-gate transistor |
| US8896055B2 (en) | 2009-09-01 | 2014-11-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Accumulation type FinFET, circuits and fabrication method thereof |
| US9484462B2 (en) | 2009-09-24 | 2016-11-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Fin structure of fin field effect transistor |
| US10355108B2 (en) | 2009-09-24 | 2019-07-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of forming a fin field effect transistor comprising two etching steps to define a fin structure |
| US11158725B2 (en) | 2009-09-24 | 2021-10-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Fin structure of fin field effect transistor |
| US9922827B2 (en) | 2010-01-14 | 2018-03-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of forming a semiconductor structure |
| US9040393B2 (en) | 2010-01-14 | 2015-05-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of forming semiconductor structure |
| US8472227B2 (en) | 2010-01-27 | 2013-06-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Integrated circuits and methods for forming the same |
| CN102136477A (zh) * | 2010-01-27 | 2011-07-27 | 台湾积体电路制造股份有限公司 | 集成电路及其制造方法 |
| CN102136477B (zh) * | 2010-01-27 | 2013-07-24 | 台湾积体电路制造股份有限公司 | 集成电路及其制造方法 |
| US8482073B2 (en) | 2010-03-25 | 2013-07-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | Integrated circuit including FINFETs and methods for forming the same |
| US8980719B2 (en) | 2010-04-28 | 2015-03-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods for doping fin field-effect transistors |
| US9209280B2 (en) | 2010-04-28 | 2015-12-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods for doping fin field-effect transistors |
| US9450097B2 (en) | 2010-04-28 | 2016-09-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods for doping Fin field-effect transistors and Fin field-effect transistor |
| US8497528B2 (en) | 2010-05-06 | 2013-07-30 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for fabricating a strained structure |
| US10510887B2 (en) | 2010-05-06 | 2019-12-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for fabricating a strained structure and structure formed |
| US9147594B2 (en) | 2010-05-06 | 2015-09-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for fabricating a strained structure |
| US10998442B2 (en) | 2010-05-06 | 2021-05-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for fabricating a strained structure and structure formed |
| US11251303B2 (en) | 2010-05-06 | 2022-02-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for fabricating a strained structure and structure formed |
| US9564529B2 (en) | 2010-05-06 | 2017-02-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for fabricating a strained structure and structure formed |
| US11855210B2 (en) | 2010-05-06 | 2023-12-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for fabricating a strained structure and structure formed |
| US12356674B2 (en) | 2010-05-06 | 2025-07-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for fabricating a strained structure and structure formed |
| US8759943B2 (en) | 2010-10-08 | 2014-06-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | Transistor having notched fin structure and method of making the same |
| US9716091B2 (en) | 2010-10-13 | 2017-07-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Fin field effect transistor |
| US9209300B2 (en) | 2010-10-13 | 2015-12-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Fin field effect transistor |
| US8809940B2 (en) | 2010-10-13 | 2014-08-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Fin held effect transistor |
| US8440517B2 (en) | 2010-10-13 | 2013-05-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | FinFET and method of fabricating the same |
| US9893160B2 (en) | 2010-10-19 | 2018-02-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods of forming gate dielectric material |
| US8603924B2 (en) | 2010-10-19 | 2013-12-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods of forming gate dielectric material |
| US8536658B2 (en) | 2010-11-08 | 2013-09-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Mechanisms for forming ultra shallow junction |
| US8806397B2 (en) | 2010-11-12 | 2014-08-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and device for increasing fin device density for unaligned fins |
| US9184088B2 (en) | 2011-01-25 | 2015-11-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of making a shallow trench isolation (STI) structures |
| US8877602B2 (en) | 2011-01-25 | 2014-11-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Mechanisms of doping oxide for forming shallow trench isolation |
| US8592915B2 (en) | 2011-01-25 | 2013-11-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Doped oxide for shallow trench isolation (STI) |
| US8431453B2 (en) | 2011-03-31 | 2013-04-30 | Taiwan Semiconductor Manufacturing Company, Ltd. | Plasma doping to reduce dielectric loss during removal of dummy layers in a gate structure |
Also Published As
| Publication number | Publication date |
|---|---|
| JP4044721B2 (ja) | 2008-02-06 |
| KR100547050B1 (ko) | 2006-02-01 |
| US20020024106A1 (en) | 2002-02-28 |
| JP2002064154A (ja) | 2002-02-28 |
| US6613634B2 (en) | 2003-09-02 |
| KR20020013809A (ko) | 2002-02-21 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GD4A | Issue of patent certificate for granted invention patent | ||
| MM4A | Annulment or lapse of patent due to non-payment of fees |