TW479370B - Semiconductor device and method of producing the same - Google Patents

Semiconductor device and method of producing the same Download PDF

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Publication number
TW479370B
TW479370B TW090101346A TW90101346A TW479370B TW 479370 B TW479370 B TW 479370B TW 090101346 A TW090101346 A TW 090101346A TW 90101346 A TW90101346 A TW 90101346A TW 479370 B TW479370 B TW 479370B
Authority
TW
Taiwan
Prior art keywords
film
semiconductor device
insulating film
silicon oxynitride
semiconductor
Prior art date
Application number
TW090101346A
Other languages
English (en)
Chinese (zh)
Inventor
Mitsunori Sakama
Noriko Ishimaru
Masahiko Miwa
Michinori Iwai
Original Assignee
Semiconductor Energy Lab
Sharp Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Lab, Sharp Kk filed Critical Semiconductor Energy Lab
Application granted granted Critical
Publication of TW479370B publication Critical patent/TW479370B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0314—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral top-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H10D30/6715—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H10D30/6715—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions
    • H10D30/6719—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions having significant overlap between the lightly-doped drains and the gate electrodes, e.g. gate-overlapped LDD [GOLDD] TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6725—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device having supplementary regions or layers for improving the flatness of the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0212—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or coating of substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/411—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by materials, geometry or structure of the substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0478—Apparatus for manufacture or treatment the substrates being processed being not semiconductor wafers, e.g. leadframes or chips
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • G02F1/13454—Drivers integrated on the active matrix substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H10D30/6715—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions
    • H10D30/6721—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions having lightly-doped extensions consisting of multiple lightly doped zones or having non-homogeneous dopant distributions, e.g. graded LDD

Landscapes

  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Formation Of Insulating Films (AREA)
  • Electroluminescent Light Sources (AREA)
TW090101346A 2000-01-31 2001-01-19 Semiconductor device and method of producing the same TW479370B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000022022A JP4493779B2 (ja) 2000-01-31 2000-01-31 半導体装置およびその作製方法

Publications (1)

Publication Number Publication Date
TW479370B true TW479370B (en) 2002-03-11

Family

ID=18548367

Family Applications (1)

Application Number Title Priority Date Filing Date
TW090101346A TW479370B (en) 2000-01-31 2001-01-19 Semiconductor device and method of producing the same

Country Status (3)

Country Link
US (1) US6673659B2 (enExample)
JP (1) JP4493779B2 (enExample)
TW (1) TW479370B (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7588883B2 (en) 2006-05-09 2009-09-15 United Microelectronics Corp. Method for forming a gate and etching a conductive layer
TWI925789B (zh) * 2025-08-12 2026-05-11 日商鎧俠股份有限公司 半導體裝置及其製造方法

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US6573195B1 (en) * 1999-01-26 2003-06-03 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device by performing a heat-treatment in a hydrogen atmosphere
US6461899B1 (en) * 1999-04-30 2002-10-08 Semiconductor Energy Laboratory, Co., Ltd. Oxynitride laminate “blocking layer” for thin film semiconductor devices
CN1263159C (zh) * 1999-06-02 2006-07-05 株式会社半导体能源研究所 半导体器件及其制造方法
JP4562835B2 (ja) * 1999-11-05 2010-10-13 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2001177101A (ja) 1999-12-20 2001-06-29 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP2004247077A (ja) * 2003-02-12 2004-09-02 Semiconductor Energy Lab Co Ltd 発光装置及びその作製方法
DE10335099B4 (de) * 2003-07-31 2006-06-08 Advanced Micro Devices, Inc., Sunnyvale Verfahren zum Verbessern der Dickengleichförmigkeit von Siliziumnitridschichten für mehrere Halbleiterscheiben
JP4232675B2 (ja) * 2004-04-01 2009-03-04 セイコーエプソン株式会社 半導体装置の製造方法
JP4649896B2 (ja) 2004-07-09 2011-03-16 日本電気株式会社 半導体装置及びその製造方法、並びにこの半導体装置を備えた表示装置
US20060181266A1 (en) * 2005-02-14 2006-08-17 Panelvision Technology, A California Corporation Flat panel display inspection system
KR101133767B1 (ko) * 2005-03-09 2012-04-09 삼성전자주식회사 유기 박막 트랜지스터 표시판 및 그 제조 방법
JP2006269808A (ja) * 2005-03-24 2006-10-05 Mitsubishi Electric Corp 半導体装置および画像表示装置
KR100703971B1 (ko) * 2005-06-08 2007-04-06 삼성전자주식회사 반도체 집적 회로 장치 및 그 제조 방법
EP3614442A3 (en) 2005-09-29 2020-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having oxide semiconductor layer and manufactoring method thereof
US7498270B2 (en) * 2005-09-30 2009-03-03 Tokyo Electron Limited Method of forming a silicon oxynitride film with tensile stress
JP2008258345A (ja) * 2007-04-04 2008-10-23 Sony Corp 薄膜トランジスタおよびその製造方法ならびに表示装置
US7807586B2 (en) * 2008-03-28 2010-10-05 Tokyo Electron Limited Method of forming a stressed passivation film using a non-ionizing electromagnetic radiation-assisted oxidation process
US8119540B2 (en) * 2008-03-28 2012-02-21 Tokyo Electron Limited Method of forming a stressed passivation film using a microwave-assisted oxidation process
KR101506124B1 (ko) * 2009-09-04 2015-03-25 가부시끼가이샤 도시바 박막 트랜지스터 및 그 제조 방법
DE102010013038B4 (de) * 2010-03-26 2012-01-19 Schüco Tf Gmbh & Co. Kg Verfahren zum Herstellen einer Fotovoltaikzelle
JP5827578B2 (ja) 2011-02-14 2015-12-02 株式会社半導体エネルギー研究所 光学素子の作製方法
WO2013052298A1 (en) * 2011-10-07 2013-04-11 Applied Materials, Inc. Methods for depositing a silicon containing layer with argon gas dilution
JP6026395B2 (ja) * 2013-12-05 2016-11-16 富士フイルム株式会社 有機機能層付き基板およびその製造方法
KR102223678B1 (ko) * 2014-07-25 2021-03-08 삼성디스플레이 주식회사 표시장치용 백플레인 및 그 제조 방법
CN108493238B (zh) * 2018-03-28 2022-11-25 京东方科技集团股份有限公司 薄膜晶体管及制作方法、阵列基板、显示装置
KR102986149B1 (ko) * 2021-01-20 2026-07-03 삼성디스플레이 주식회사 색변환 패널 및 이를 포함하는 표시 장치
CN115732571B (zh) * 2021-08-31 2026-06-26 福州京东方光电科技有限公司 金属氧化物薄膜晶体管及其制备方法、显示面板

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JP3597331B2 (ja) 1996-10-24 2004-12-08 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2000012864A (ja) 1998-06-22 2000-01-14 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP3977974B2 (ja) * 1998-12-29 2007-09-19 株式会社半導体エネルギー研究所 半導体装置
US6461899B1 (en) 1999-04-30 2002-10-08 Semiconductor Energy Laboratory, Co., Ltd. Oxynitride laminate “blocking layer” for thin film semiconductor devices
JP4463377B2 (ja) * 1999-04-30 2010-05-19 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
JP2001177101A (ja) * 1999-12-20 2001-06-29 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
TW521226B (en) 2000-03-27 2003-02-21 Semiconductor Energy Lab Electro-optical device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7588883B2 (en) 2006-05-09 2009-09-15 United Microelectronics Corp. Method for forming a gate and etching a conductive layer
TWI925789B (zh) * 2025-08-12 2026-05-11 日商鎧俠股份有限公司 半導體裝置及其製造方法

Also Published As

Publication number Publication date
JP2001217422A (ja) 2001-08-10
US6673659B2 (en) 2004-01-06
JP4493779B2 (ja) 2010-06-30
US20010011725A1 (en) 2001-08-09

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