TW475175B - Semiconductor device - Google Patents
Semiconductor device Download PDFInfo
- Publication number
- TW475175B TW475175B TW089118431A TW89118431A TW475175B TW 475175 B TW475175 B TW 475175B TW 089118431 A TW089118431 A TW 089118431A TW 89118431 A TW89118431 A TW 89118431A TW 475175 B TW475175 B TW 475175B
- Authority
- TW
- Taiwan
- Prior art keywords
- potential
- mentioned
- line
- source
- bit line
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 27
- 230000009471 action Effects 0.000 claims description 22
- 239000003990 capacitor Substances 0.000 claims description 22
- 230000005611 electricity Effects 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 6
- 230000009977 dual effect Effects 0.000 claims description 5
- 239000013078 crystal Substances 0.000 claims 1
- 239000004519 grease Substances 0.000 claims 1
- 102100036285 25-hydroxyvitamin D-1 alpha hydroxylase, mitochondrial Human genes 0.000 abstract description 30
- 101000875403 Homo sapiens 25-hydroxyvitamin D-1 alpha hydroxylase, mitochondrial Proteins 0.000 abstract description 30
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 238000010586 diagram Methods 0.000 description 29
- 238000002955 isolation Methods 0.000 description 17
- 230000004044 response Effects 0.000 description 14
- 238000004364 calculation method Methods 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 6
- 241001077878 Neurolaena lobata Species 0.000 description 5
- 102100038980 Exosome complex component CSL4 Human genes 0.000 description 4
- 101000882169 Homo sapiens Exosome complex component CSL4 Proteins 0.000 description 4
- 230000003321 amplification Effects 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 238000003199 nucleic acid amplification method Methods 0.000 description 4
- 101710179738 6,7-dimethyl-8-ribityllumazine synthase 1 Proteins 0.000 description 3
- 102100020800 DNA damage-regulated autophagy modulator protein 1 Human genes 0.000 description 3
- 101000931929 Homo sapiens DNA damage-regulated autophagy modulator protein 1 Proteins 0.000 description 3
- 101710186608 Lipoyl synthase 1 Proteins 0.000 description 3
- 101710137584 Lipoyl synthase 1, chloroplastic Proteins 0.000 description 3
- 101710090391 Lipoyl synthase 1, mitochondrial Proteins 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 101100495436 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) CSE4 gene Proteins 0.000 description 2
- 239000013256 coordination polymer Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 102100030341 Ethanolaminephosphotransferase 1 Human genes 0.000 description 1
- 240000008168 Ficus benjamina Species 0.000 description 1
- 101000938340 Homo sapiens Ethanolaminephosphotransferase 1 Proteins 0.000 description 1
- 101000632314 Homo sapiens Septin-6 Proteins 0.000 description 1
- 101000632054 Homo sapiens Septin-8 Proteins 0.000 description 1
- 206010061218 Inflammation Diseases 0.000 description 1
- 241000282376 Panthera tigris Species 0.000 description 1
- 102100027982 Septin-6 Human genes 0.000 description 1
- 230000003796 beauty Effects 0.000 description 1
- 230000000747 cardiac effect Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000004054 inflammatory process Effects 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000011257 shell material Substances 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/406—Management or control of the refreshing or charge-regeneration cycles
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
- G11C7/065—Differential amplifiers of latching type
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/18—Bit line organisation; Bit line lay-out
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Dram (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25684299A JP2001084768A (ja) | 1999-09-10 | 1999-09-10 | 半導体装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW475175B true TW475175B (en) | 2002-02-01 |
Family
ID=17298184
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW089118431A TW475175B (en) | 1999-09-10 | 2000-09-08 | Semiconductor device |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US6304494B1 (ko) |
| EP (1) | EP1083571B1 (ko) |
| JP (1) | JP2001084768A (ko) |
| KR (1) | KR100351083B1 (ko) |
| DE (1) | DE60000159T2 (ko) |
| TW (1) | TW475175B (ko) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6567332B2 (en) * | 2001-03-15 | 2003-05-20 | Micron Technology, Inc. | Memory devices with reduced power consumption refresh cycles |
| JP4388274B2 (ja) * | 2002-12-24 | 2009-12-24 | 株式会社ルネサステクノロジ | 半導体記憶装置 |
| KR100546188B1 (ko) * | 2003-05-24 | 2006-01-24 | 주식회사 하이닉스반도체 | 감지증폭수단을 포함하는 반도체 메모리 장치 및 그의감지증폭수단을 오버드라이브 하는 방법 |
| JP2005025805A (ja) * | 2003-06-30 | 2005-01-27 | Renesas Technology Corp | 半導体記憶装置 |
| KR100541367B1 (ko) * | 2003-07-15 | 2006-01-11 | 주식회사 하이닉스반도체 | 오버드라이빙 구조를 가진 반도체 메모리 소자 |
| US7936201B2 (en) * | 2006-12-22 | 2011-05-03 | Qimonda Ag | Apparatus and method for providing a signal for transmission via a signal line |
| CN102522107B (zh) * | 2011-12-16 | 2014-12-17 | 上海科勒电子科技有限公司 | 传感器或控制器读写系统和方法及相关感应龙头 |
| US9053817B2 (en) * | 2013-03-15 | 2015-06-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | Amplifier |
| US9875774B1 (en) * | 2016-11-29 | 2018-01-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Memory device and method of operating same |
| US10431291B1 (en) * | 2018-08-08 | 2019-10-01 | Micron Technology, Inc. | Systems and methods for dynamic random access memory (DRAM) cell voltage boosting |
| KR102653529B1 (ko) * | 2018-10-22 | 2024-04-02 | 에스케이하이닉스 주식회사 | 반도체장치 및 반도체시스템 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2759689B2 (ja) * | 1989-11-24 | 1998-05-28 | 松下電器産業株式会社 | Ｒａｍの読み出し回路 |
| US5264058A (en) | 1992-08-24 | 1993-11-23 | Monsanto | Forming a shaped prelaminate and bilayer glazing of glass and plastic |
| US5764580A (en) * | 1995-08-18 | 1998-06-09 | Hitachi, Ltd. | Semiconductor integrated circuit |
| JPH09128966A (ja) | 1995-10-31 | 1997-05-16 | Nec Corp | ダイナミック型半導体記憶装置 |
| TW318932B (ko) | 1995-12-28 | 1997-11-01 | Hitachi Ltd | |
| WO1997028532A1 (en) | 1996-02-01 | 1997-08-07 | Micron Technology, Inc. | Digit line architecture for dynamic memory |
| JP3386684B2 (ja) | 1997-03-19 | 2003-03-17 | シャープ株式会社 | 半導体記憶装置 |
| JPH1186549A (ja) | 1997-09-01 | 1999-03-30 | Hitachi Ltd | ダイナミック型ｒａｍ |
| JP4326049B2 (ja) * | 1998-10-27 | 2009-09-02 | 富士通マイクロエレクトロニクス株式会社 | 書き込みを高速化したメモリデバイス |
-
1999
- 1999-09-10 JP JP25684299A patent/JP2001084768A/ja active Pending
-
2000
- 2000-09-07 US US09/657,146 patent/US6304494B1/en not_active Expired - Fee Related
- 2000-09-08 TW TW089118431A patent/TW475175B/zh not_active IP Right Cessation
- 2000-09-08 DE DE60000159T patent/DE60000159T2/de not_active Expired - Lifetime
- 2000-09-08 EP EP00119638A patent/EP1083571B1/en not_active Expired - Lifetime
- 2000-09-09 KR KR1020000053762A patent/KR100351083B1/ko not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| KR100351083B1 (ko) | 2002-09-05 |
| DE60000159D1 (de) | 2002-06-13 |
| JP2001084768A (ja) | 2001-03-30 |
| US6304494B1 (en) | 2001-10-16 |
| KR20010070067A (ko) | 2001-07-25 |
| DE60000159T2 (de) | 2002-11-07 |
| EP1083571A1 (en) | 2001-03-14 |
| EP1083571B1 (en) | 2002-05-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TW448623B (en) | Semiconductor memory device | |
| TWI514416B (zh) | 記憶胞以及動態記憶體陣列 | |
| KR900008936B1 (ko) | Cmos 다이내믹램 | |
| TW440869B (en) | Programmable delay control in a memory | |
| TWI332211B (en) | A dual port static random access memory cell | |
| TW486632B (en) | Data transmission circuit | |
| TW201717201A (zh) | 用於電阻式變化元件陣列的ｄｄｒ相容記憶體電路架構 | |
| US7864617B2 (en) | Memory with reduced power supply voltage for a write operation | |
| TW475175B (en) | Semiconductor device | |
| TW200402722A (en) | Semiconductor memory device operating with low current consumption | |
| JP2007141399A (ja) | 半導体装置 | |
| JPH01138687A (ja) | 半導体記憶装置 | |
| TW200816200A (en) | Two-port SRAM with a high speed sensing scheme | |
| JPH0462436B2 (ko) | ||
| TWM358390U (en) | Single port SRAM having a lower power voltage in writing operation | |
| JPH06223572A (ja) | Ｄｒａｍ構造 | |
| TW586229B (en) | Semiconductor integrated circuit | |
| CN102385916A (zh) | 一种具有读写分离的双端口sram单元6t结构 | |
| JP4583703B2 (ja) | 半導体記憶装置 | |
| TW200403676A (en) | Semiconductor memory device storing ternary data signal | |
| TW200532688A (en) | Semiconductor storage device | |
| TWI764453B (zh) | 揮發性記憶體裝置及其資料感測方法 | |
| TW514936B (en) | Semiconductor memory device | |
| TW200406768A (en) | Semiconductor memory device with power consumption reduced in non-data-access | |
| JP2000040378A (ja) | 多値強誘電体メモリ |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GD4A | Issue of patent certificate for granted invention patent | ||
| MM4A | Annulment or lapse of patent due to non-payment of fees |