TW473786B - Method and apparatus for reducing stress across capacitors used in integrated circuits - Google Patents
Method and apparatus for reducing stress across capacitors used in integrated circuits Download PDFInfo
- Publication number
- TW473786B TW473786B TW089117028A TW89117028A TW473786B TW 473786 B TW473786 B TW 473786B TW 089117028 A TW089117028 A TW 089117028A TW 89117028 A TW89117028 A TW 89117028A TW 473786 B TW473786 B TW 473786B
- Authority
- TW
- Taiwan
- Prior art keywords
- capacitor
- node
- voltage
- capacitors
- terminal
- Prior art date
Links
- 239000003990 capacitor Substances 0.000 title claims abstract description 266
- 238000000034 method Methods 0.000 title claims abstract description 49
- 230000007704 transition Effects 0.000 claims abstract description 13
- 238000005086 pumping Methods 0.000 claims description 30
- 230000006378 damage Effects 0.000 claims description 18
- 238000012937 correction Methods 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 claims description 2
- 230000015556 catabolic process Effects 0.000 abstract description 6
- 230000001052 transient effect Effects 0.000 description 18
- 230000002079 cooperative effect Effects 0.000 description 10
- 238000010586 diagram Methods 0.000 description 9
- 230000005669 field effect Effects 0.000 description 5
- 238000009434 installation Methods 0.000 description 5
- 230000015654 memory Effects 0.000 description 5
- 230000001276 controlling effect Effects 0.000 description 4
- 238000012546 transfer Methods 0.000 description 3
- 102100040862 Dual specificity protein kinase CLK1 Human genes 0.000 description 2
- 102100040844 Dual specificity protein kinase CLK2 Human genes 0.000 description 2
- 101000749294 Homo sapiens Dual specificity protein kinase CLK1 Proteins 0.000 description 2
- 101000749291 Homo sapiens Dual specificity protein kinase CLK2 Proteins 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 241000030538 Thecla Species 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000007726 management method Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of DC power input into DC power output
- H02M3/02—Conversion of DC power input into DC power output without intermediate conversion into AC
- H02M3/04—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters
- H02M3/06—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider
- H02M3/07—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of DC power input into DC power output
- H02M3/02—Conversion of DC power input into DC power output without intermediate conversion into AC
- H02M3/04—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters
- H02M3/06—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider
- H02M3/07—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
- H02M3/073—Charge pumps of the Schenkel-type
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Dc-Dc Converters (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/405,977 US6297974B1 (en) | 1999-09-27 | 1999-09-27 | Method and apparatus for reducing stress across capacitors used in integrated circuits |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW473786B true TW473786B (en) | 2002-01-21 |
Family
ID=23606020
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW089117028A TW473786B (en) | 1999-09-27 | 2000-08-24 | Method and apparatus for reducing stress across capacitors used in integrated circuits |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US6297974B1 (enExample) |
| JP (1) | JP2003511003A (enExample) |
| KR (1) | KR100438371B1 (enExample) |
| CN (1) | CN1187884C (enExample) |
| AU (1) | AU6109300A (enExample) |
| TW (1) | TW473786B (enExample) |
| WO (1) | WO2001024348A1 (enExample) |
Families Citing this family (62)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6768165B1 (en) | 1997-08-01 | 2004-07-27 | Saifun Semiconductors Ltd. | Two bit non-volatile electrically erasable and programmable semiconductor memory cell utilizing asymmetrical charge trapping |
| US6696883B1 (en) * | 2000-09-20 | 2004-02-24 | Cypress Semiconductor Corp. | Negative bias charge pump |
| US6584017B2 (en) | 2001-04-05 | 2003-06-24 | Saifun Semiconductors Ltd. | Method for programming a reference cell |
| US6791396B2 (en) * | 2001-10-24 | 2004-09-14 | Saifun Semiconductors Ltd. | Stack element circuit |
| US6700818B2 (en) | 2002-01-31 | 2004-03-02 | Saifun Semiconductors Ltd. | Method for operating a memory device |
| US6917544B2 (en) | 2002-07-10 | 2005-07-12 | Saifun Semiconductors Ltd. | Multiple use memory chip |
| US6781897B2 (en) * | 2002-08-01 | 2004-08-24 | Infineon Technologies Flash Ltd. | Defects detection |
| US7136304B2 (en) | 2002-10-29 | 2006-11-14 | Saifun Semiconductor Ltd | Method, system and circuit for programming a non-volatile memory array |
| US7148739B2 (en) * | 2002-12-19 | 2006-12-12 | Saifun Semiconductors Ltd. | Charge pump element with body effect cancellation for early charge pump stages |
| US20040151032A1 (en) * | 2003-01-30 | 2004-08-05 | Yan Polansky | High speed and low noise output buffer |
| US6842383B2 (en) | 2003-01-30 | 2005-01-11 | Saifun Semiconductors Ltd. | Method and circuit for operating a memory cell using a single charge pump |
| US7178004B2 (en) | 2003-01-31 | 2007-02-13 | Yan Polansky | Memory array programming circuit and a method for using the circuit |
| US6885244B2 (en) | 2003-03-24 | 2005-04-26 | Saifun Semiconductors Ltd. | Operational amplifier with fast rise time |
| US7142464B2 (en) | 2003-04-29 | 2006-11-28 | Saifun Semiconductors Ltd. | Apparatus and methods for multi-level sensing in a memory array |
| US6906966B2 (en) | 2003-06-16 | 2005-06-14 | Saifun Semiconductors Ltd. | Fast discharge for program and verification |
| US7123532B2 (en) | 2003-09-16 | 2006-10-17 | Saifun Semiconductors Ltd. | Operating array cells with matched reference cells |
| US7050319B2 (en) * | 2003-12-03 | 2006-05-23 | Micron Technology, Inc. | Memory architecture and method of manufacture and operation thereof |
| US7176728B2 (en) * | 2004-02-10 | 2007-02-13 | Saifun Semiconductors Ltd | High voltage low power driver |
| US8339102B2 (en) * | 2004-02-10 | 2012-12-25 | Spansion Israel Ltd | System and method for regulating loading on an integrated circuit power supply |
| US7652930B2 (en) | 2004-04-01 | 2010-01-26 | Saifun Semiconductors Ltd. | Method, circuit and system for erasing one or more non-volatile memory cells |
| US7190212B2 (en) * | 2004-06-08 | 2007-03-13 | Saifun Semiconductors Ltd | Power-up and BGREF circuitry |
| US7187595B2 (en) * | 2004-06-08 | 2007-03-06 | Saifun Semiconductors Ltd. | Replenishment for internal voltage |
| US7256438B2 (en) * | 2004-06-08 | 2007-08-14 | Saifun Semiconductors Ltd | MOS capacitor with reduced parasitic capacitance |
| US7317633B2 (en) | 2004-07-06 | 2008-01-08 | Saifun Semiconductors Ltd | Protection of NROM devices from charge damage |
| US7095655B2 (en) | 2004-08-12 | 2006-08-22 | Saifun Semiconductors Ltd. | Dynamic matching of signal path and reference path for sensing |
| US7638850B2 (en) | 2004-10-14 | 2009-12-29 | Saifun Semiconductors Ltd. | Non-volatile memory structure and method of fabrication |
| US7535765B2 (en) | 2004-12-09 | 2009-05-19 | Saifun Semiconductors Ltd. | Non-volatile memory device and method for reading cells |
| EP1686592A3 (en) | 2005-01-19 | 2007-04-25 | Saifun Semiconductors Ltd. | Partial erase verify |
| US7561866B2 (en) * | 2005-02-22 | 2009-07-14 | Impinj, Inc. | RFID tags with power rectifiers that have bias |
| US8053812B2 (en) | 2005-03-17 | 2011-11-08 | Spansion Israel Ltd | Contact in planar NROM technology |
| US8400841B2 (en) | 2005-06-15 | 2013-03-19 | Spansion Israel Ltd. | Device to program adjacent storage cells of different NROM cells |
| US7184313B2 (en) | 2005-06-17 | 2007-02-27 | Saifun Semiconductors Ltd. | Method circuit and system for compensating for temperature induced margin loss in non-volatile memory cells |
| JP2007027760A (ja) | 2005-07-18 | 2007-02-01 | Saifun Semiconductors Ltd | 高密度不揮発性メモリアレイ及び製造方法 |
| US7668017B2 (en) | 2005-08-17 | 2010-02-23 | Saifun Semiconductors Ltd. | Method of erasing non-volatile memory cells |
| US7221138B2 (en) | 2005-09-27 | 2007-05-22 | Saifun Semiconductors Ltd | Method and apparatus for measuring charge pump output current |
| US7352627B2 (en) | 2006-01-03 | 2008-04-01 | Saifon Semiconductors Ltd. | Method, system, and circuit for operating a non-volatile memory array |
| US7808818B2 (en) | 2006-01-12 | 2010-10-05 | Saifun Semiconductors Ltd. | Secondary injection for NROM |
| US7692961B2 (en) | 2006-02-21 | 2010-04-06 | Saifun Semiconductors Ltd. | Method, circuit and device for disturb-control of programming nonvolatile memory cells by hot-hole injection (HHI) and by channel hot-electron (CHE) injection |
| US8253452B2 (en) | 2006-02-21 | 2012-08-28 | Spansion Israel Ltd | Circuit and method for powering up an integrated circuit and an integrated circuit utilizing same |
| US7760554B2 (en) | 2006-02-21 | 2010-07-20 | Saifun Semiconductors Ltd. | NROM non-volatile memory and mode of operation |
| US7638835B2 (en) | 2006-02-28 | 2009-12-29 | Saifun Semiconductors Ltd. | Double density NROM with nitride strips (DDNS) |
| US7701779B2 (en) | 2006-04-27 | 2010-04-20 | Sajfun Semiconductors Ltd. | Method for programming a reference cell |
| US7605579B2 (en) | 2006-09-18 | 2009-10-20 | Saifun Semiconductors Ltd. | Measuring and controlling current consumption and output current of charge pumps |
| US7629831B1 (en) * | 2006-10-11 | 2009-12-08 | Altera Corporation | Booster circuit with capacitor protection circuitry |
| US8228175B1 (en) | 2008-04-07 | 2012-07-24 | Impinj, Inc. | RFID tag chips and tags with alternative behaviors and methods |
| US8115597B1 (en) * | 2007-03-07 | 2012-02-14 | Impinj, Inc. | RFID tags with synchronous power rectifier |
| KR20090105684A (ko) * | 2008-04-03 | 2009-10-07 | 삼성전자주식회사 | 플래시 메모리 장치 및 그것을 위한 전압 발생회로 |
| US8326256B1 (en) | 2008-07-15 | 2012-12-04 | Impinj, Inc. | RFID tag with MOS bipolar hybrid rectifier |
| KR200452404Y1 (ko) * | 2008-08-11 | 2011-02-28 | (주) 케이.아이.씨.에이 | 플러그의 착탈이 용이한 어댑터 |
| IT1404156B1 (it) | 2010-12-30 | 2013-11-15 | St Microelectronics Srl | Moltiplicatore di tensione |
| WO2012131425A1 (en) * | 2011-03-25 | 2012-10-04 | Freescale Semiconductor, Inc. | Integrated circuit and method for reducing an impact of electrical stress in an integrated circuit |
| US9013938B1 (en) * | 2011-12-02 | 2015-04-21 | Cypress Semiconductor Corporation | Systems and methods for discharging load capacitance circuits |
| CN103138248B (zh) * | 2011-12-02 | 2016-02-24 | 赛普拉斯半导体公司 | 用于从负载电容电路释放电压的系统和方法 |
| CN103364712A (zh) * | 2012-04-09 | 2013-10-23 | 快捷半导体(苏州)有限公司 | Evs测试电路、evs测试系统和evs测试方法 |
| US11352287B2 (en) | 2012-11-28 | 2022-06-07 | Vitro Flat Glass Llc | High strain point glass |
| CN105210278B (zh) * | 2013-03-15 | 2018-04-03 | 维斯普瑞公司 | 充电泵系统和方法 |
| CN103715883B (zh) * | 2014-01-07 | 2016-08-17 | 上海华虹宏力半导体制造有限公司 | 一种电荷泵电路 |
| US11611276B2 (en) * | 2014-12-04 | 2023-03-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | Charge pump circuit |
| US9491151B2 (en) * | 2015-01-07 | 2016-11-08 | Ememory Technology Inc. | Memory apparatus, charge pump circuit and voltage pumping method thereof |
| CN106817021B (zh) * | 2015-12-01 | 2019-09-13 | 台湾积体电路制造股份有限公司 | 电荷泵电路 |
| US12088216B2 (en) | 2022-04-11 | 2024-09-10 | Hamilton Sundstrand Corporation | DC to AC converter with magnitude based on duty ratio |
| US20230327551A1 (en) * | 2022-04-11 | 2023-10-12 | Hamilton Sundstrand Corporation | Dc to dc converter with improved duty ratio and configurable output polarity |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4156838A (en) * | 1978-06-12 | 1979-05-29 | Control Concepts Corporation | Active filter circuit for transient suppression |
| US4679114A (en) * | 1986-04-09 | 1987-07-07 | Carpenter Jr Roy B | Method and equipment for lightning protection through electric potential neutralization |
| CA2019525C (en) * | 1989-06-23 | 1995-07-11 | Takuya Ishii | Switching power supply device |
| US5008799A (en) | 1990-04-05 | 1991-04-16 | Montalvo Antonio J | Back-to-back capacitor charge pumps |
| US5059815A (en) | 1990-04-05 | 1991-10-22 | Advanced Micro Devices, Inc. | High voltage charge pumps with series capacitors |
| JP3373534B2 (ja) * | 1991-07-02 | 2003-02-04 | 株式会社東芝 | 半導体記憶装置 |
| NL9200057A (nl) * | 1992-01-14 | 1993-08-02 | Sierra Semiconductor Bv | Terugkoppelnetwerk voor cmos hoogspanningsgenerator om (e)eprom-geheugen cellen te programmeren. |
| US5301097A (en) * | 1992-06-10 | 1994-04-05 | Intel Corporation | Multi-staged charge-pump with staggered clock phases for providing high current capability |
| US5422586A (en) * | 1993-09-10 | 1995-06-06 | Intel Corporation | Apparatus for a two phase bootstrap charge pump |
| US5553030A (en) | 1993-09-10 | 1996-09-03 | Intel Corporation | Method and apparatus for controlling the output voltage provided by a charge pump circuit |
| DE69530942T2 (de) | 1995-03-09 | 2004-03-11 | Macronix International Co. Ltd., Hsinchu | Ladungspumpe mit reihenkondensator |
| EP0772282B1 (en) | 1995-10-31 | 2000-03-15 | STMicroelectronics S.r.l. | Negative charge pump circuit for electrically erasable semiconductor memory devices |
| EP0880783B1 (en) | 1996-02-15 | 1999-10-13 | Advanced Micro Devices, Inc. | Low supply voltage negative charge pump |
| EP0992103B1 (en) * | 1998-04-24 | 2008-10-29 | Nxp B.V. | Combined capacitive up/down converter |
-
1999
- 1999-09-27 US US09/405,977 patent/US6297974B1/en not_active Ceased
-
2000
- 2000-07-18 AU AU61093/00A patent/AU6109300A/en not_active Abandoned
- 2000-07-18 CN CNB00816312XA patent/CN1187884C/zh not_active Expired - Fee Related
- 2000-07-18 WO PCT/US2000/019623 patent/WO2001024348A1/en not_active Ceased
- 2000-07-18 KR KR10-2002-7003925A patent/KR100438371B1/ko not_active Expired - Fee Related
- 2000-07-18 JP JP2001527423A patent/JP2003511003A/ja not_active Ceased
- 2000-08-24 TW TW089117028A patent/TW473786B/zh not_active IP Right Cessation
-
2003
- 2003-10-02 US US10/678,055 patent/USRE41217E1/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JP2003511003A (ja) | 2003-03-18 |
| KR20020038773A (ko) | 2002-05-23 |
| WO2001024348A1 (en) | 2001-04-05 |
| AU6109300A (en) | 2001-04-30 |
| CN1399811A (zh) | 2003-02-26 |
| KR100438371B1 (ko) | 2004-07-02 |
| CN1187884C (zh) | 2005-02-02 |
| US6297974B1 (en) | 2001-10-02 |
| USRE41217E1 (en) | 2010-04-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TW473786B (en) | Method and apparatus for reducing stress across capacitors used in integrated circuits | |
| TW578377B (en) | Charge-pump circuit and method for controlling the same | |
| JP4040467B2 (ja) | プログラマブルチャージポンプ装置 | |
| US8629575B2 (en) | Integrated circuit and method for charge reversal of a circuit part of the integrated circuit | |
| WO1998020401A1 (en) | Positive/negative high voltage charge pump system | |
| CN211046760U (zh) | 电荷泵电路和非易失性存储器设备 | |
| CN102377334A (zh) | 电荷泵电路、非易失性存储器、数据处理装置和微计算机应用系统 | |
| US7724073B2 (en) | Charge pump circuit | |
| US20150028938A1 (en) | Charge pumping device | |
| US4527074A (en) | High voltage pass circuit | |
| JPH08287687A (ja) | 半導体メモリ用オンチップ電圧倍増器回路 | |
| CN104835474B (zh) | 电压输出装置、栅极驱动电路和显示装置 | |
| KR100909837B1 (ko) | 단위전하펌프 | |
| CN107546976A (zh) | 电荷泵电路及电荷泵 | |
| US7532060B2 (en) | Charge-pump device with increased current output | |
| US11114937B2 (en) | Charge pump circuit | |
| CN101005236B (zh) | 升压电路 | |
| US6738273B2 (en) | Charge pump drive signal recovery circuit | |
| CN107453602B (zh) | 电荷泵和存储装置 | |
| KR20230015252A (ko) | 전류 제한 회로 | |
| CN217135174U (zh) | 减小新增设备容性等效负载对电源冲击的电路 | |
| US5638023A (en) | Charge pump circuit | |
| CN221978794U (zh) | 一种驱动电路、浪涌阻隔电路、芯片及电子设备 | |
| JP2008301631A (ja) | 昇圧回路 | |
| US20080068068A1 (en) | Method and system for charge pumps |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GD4A | Issue of patent certificate for granted invention patent | ||
| MM4A | Annulment or lapse of patent due to non-payment of fees |