CN1187884C - 用来降低集成电路所用电容器上的应力的方法和装置 - Google Patents
用来降低集成电路所用电容器上的应力的方法和装置 Download PDFInfo
- Publication number
- CN1187884C CN1187884C CNB00816312XA CN00816312A CN1187884C CN 1187884 C CN1187884 C CN 1187884C CN B00816312X A CNB00816312X A CN B00816312XA CN 00816312 A CN00816312 A CN 00816312A CN 1187884 C CN1187884 C CN 1187884C
- Authority
- CN
- China
- Prior art keywords
- voltage
- node
- capacitor
- power state
- voltage level
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of DC power input into DC power output
- H02M3/02—Conversion of DC power input into DC power output without intermediate conversion into AC
- H02M3/04—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters
- H02M3/06—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider
- H02M3/07—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of DC power input into DC power output
- H02M3/02—Conversion of DC power input into DC power output without intermediate conversion into AC
- H02M3/04—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters
- H02M3/06—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider
- H02M3/07—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
- H02M3/073—Charge pumps of the Schenkel-type
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Dc-Dc Converters (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/405,977 US6297974B1 (en) | 1999-09-27 | 1999-09-27 | Method and apparatus for reducing stress across capacitors used in integrated circuits |
| US09/405,977 | 1999-09-27 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1399811A CN1399811A (zh) | 2003-02-26 |
| CN1187884C true CN1187884C (zh) | 2005-02-02 |
Family
ID=23606020
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB00816312XA Expired - Fee Related CN1187884C (zh) | 1999-09-27 | 2000-07-18 | 用来降低集成电路所用电容器上的应力的方法和装置 |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US6297974B1 (enExample) |
| JP (1) | JP2003511003A (enExample) |
| KR (1) | KR100438371B1 (enExample) |
| CN (1) | CN1187884C (enExample) |
| AU (1) | AU6109300A (enExample) |
| TW (1) | TW473786B (enExample) |
| WO (1) | WO2001024348A1 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106817021A (zh) * | 2015-12-01 | 2017-06-09 | 台湾积体电路制造股份有限公司 | 电荷泵电路 |
Families Citing this family (62)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US6768165B1 (en) | 1997-08-01 | 2004-07-27 | Saifun Semiconductors Ltd. | Two bit non-volatile electrically erasable and programmable semiconductor memory cell utilizing asymmetrical charge trapping |
| US6696883B1 (en) * | 2000-09-20 | 2004-02-24 | Cypress Semiconductor Corp. | Negative bias charge pump |
| US6584017B2 (en) | 2001-04-05 | 2003-06-24 | Saifun Semiconductors Ltd. | Method for programming a reference cell |
| US6791396B2 (en) * | 2001-10-24 | 2004-09-14 | Saifun Semiconductors Ltd. | Stack element circuit |
| US6700818B2 (en) | 2002-01-31 | 2004-03-02 | Saifun Semiconductors Ltd. | Method for operating a memory device |
| US6917544B2 (en) | 2002-07-10 | 2005-07-12 | Saifun Semiconductors Ltd. | Multiple use memory chip |
| US6781897B2 (en) * | 2002-08-01 | 2004-08-24 | Infineon Technologies Flash Ltd. | Defects detection |
| US7136304B2 (en) | 2002-10-29 | 2006-11-14 | Saifun Semiconductor Ltd | Method, system and circuit for programming a non-volatile memory array |
| US7148739B2 (en) * | 2002-12-19 | 2006-12-12 | Saifun Semiconductors Ltd. | Charge pump element with body effect cancellation for early charge pump stages |
| US6842383B2 (en) | 2003-01-30 | 2005-01-11 | Saifun Semiconductors Ltd. | Method and circuit for operating a memory cell using a single charge pump |
| US20040151032A1 (en) * | 2003-01-30 | 2004-08-05 | Yan Polansky | High speed and low noise output buffer |
| US7178004B2 (en) | 2003-01-31 | 2007-02-13 | Yan Polansky | Memory array programming circuit and a method for using the circuit |
| US6885244B2 (en) | 2003-03-24 | 2005-04-26 | Saifun Semiconductors Ltd. | Operational amplifier with fast rise time |
| US7142464B2 (en) | 2003-04-29 | 2006-11-28 | Saifun Semiconductors Ltd. | Apparatus and methods for multi-level sensing in a memory array |
| US6906966B2 (en) | 2003-06-16 | 2005-06-14 | Saifun Semiconductors Ltd. | Fast discharge for program and verification |
| US7123532B2 (en) | 2003-09-16 | 2006-10-17 | Saifun Semiconductors Ltd. | Operating array cells with matched reference cells |
| US7050319B2 (en) * | 2003-12-03 | 2006-05-23 | Micron Technology, Inc. | Memory architecture and method of manufacture and operation thereof |
| US8339102B2 (en) * | 2004-02-10 | 2012-12-25 | Spansion Israel Ltd | System and method for regulating loading on an integrated circuit power supply |
| US7176728B2 (en) * | 2004-02-10 | 2007-02-13 | Saifun Semiconductors Ltd | High voltage low power driver |
| WO2005094178A2 (en) | 2004-04-01 | 2005-10-13 | Saifun Semiconductors Ltd. | Method, circuit and systems for erasing one or more non-volatile memory cells |
| US7187595B2 (en) * | 2004-06-08 | 2007-03-06 | Saifun Semiconductors Ltd. | Replenishment for internal voltage |
| US7190212B2 (en) * | 2004-06-08 | 2007-03-13 | Saifun Semiconductors Ltd | Power-up and BGREF circuitry |
| US7256438B2 (en) * | 2004-06-08 | 2007-08-14 | Saifun Semiconductors Ltd | MOS capacitor with reduced parasitic capacitance |
| US7317633B2 (en) | 2004-07-06 | 2008-01-08 | Saifun Semiconductors Ltd | Protection of NROM devices from charge damage |
| US7095655B2 (en) | 2004-08-12 | 2006-08-22 | Saifun Semiconductors Ltd. | Dynamic matching of signal path and reference path for sensing |
| US7638850B2 (en) * | 2004-10-14 | 2009-12-29 | Saifun Semiconductors Ltd. | Non-volatile memory structure and method of fabrication |
| US7535765B2 (en) | 2004-12-09 | 2009-05-19 | Saifun Semiconductors Ltd. | Non-volatile memory device and method for reading cells |
| EP1684307A1 (en) | 2005-01-19 | 2006-07-26 | Saifun Semiconductors Ltd. | Method, circuit and systems for erasing one or more non-volatile memory cells |
| US7561866B2 (en) * | 2005-02-22 | 2009-07-14 | Impinj, Inc. | RFID tags with power rectifiers that have bias |
| US8053812B2 (en) | 2005-03-17 | 2011-11-08 | Spansion Israel Ltd | Contact in planar NROM technology |
| US8400841B2 (en) | 2005-06-15 | 2013-03-19 | Spansion Israel Ltd. | Device to program adjacent storage cells of different NROM cells |
| US7184313B2 (en) | 2005-06-17 | 2007-02-27 | Saifun Semiconductors Ltd. | Method circuit and system for compensating for temperature induced margin loss in non-volatile memory cells |
| EP1746645A3 (en) | 2005-07-18 | 2009-01-21 | Saifun Semiconductors Ltd. | Memory array with sub-minimum feature size word line spacing and method of fabrication |
| US7668017B2 (en) | 2005-08-17 | 2010-02-23 | Saifun Semiconductors Ltd. | Method of erasing non-volatile memory cells |
| US7221138B2 (en) | 2005-09-27 | 2007-05-22 | Saifun Semiconductors Ltd | Method and apparatus for measuring charge pump output current |
| US7352627B2 (en) | 2006-01-03 | 2008-04-01 | Saifon Semiconductors Ltd. | Method, system, and circuit for operating a non-volatile memory array |
| US7808818B2 (en) | 2006-01-12 | 2010-10-05 | Saifun Semiconductors Ltd. | Secondary injection for NROM |
| US7692961B2 (en) | 2006-02-21 | 2010-04-06 | Saifun Semiconductors Ltd. | Method, circuit and device for disturb-control of programming nonvolatile memory cells by hot-hole injection (HHI) and by channel hot-electron (CHE) injection |
| US7760554B2 (en) | 2006-02-21 | 2010-07-20 | Saifun Semiconductors Ltd. | NROM non-volatile memory and mode of operation |
| US8253452B2 (en) | 2006-02-21 | 2012-08-28 | Spansion Israel Ltd | Circuit and method for powering up an integrated circuit and an integrated circuit utilizing same |
| US7638835B2 (en) | 2006-02-28 | 2009-12-29 | Saifun Semiconductors Ltd. | Double density NROM with nitride strips (DDNS) |
| US7701779B2 (en) | 2006-04-27 | 2010-04-20 | Sajfun Semiconductors Ltd. | Method for programming a reference cell |
| US7605579B2 (en) | 2006-09-18 | 2009-10-20 | Saifun Semiconductors Ltd. | Measuring and controlling current consumption and output current of charge pumps |
| US7629831B1 (en) * | 2006-10-11 | 2009-12-08 | Altera Corporation | Booster circuit with capacitor protection circuitry |
| US8228175B1 (en) | 2008-04-07 | 2012-07-24 | Impinj, Inc. | RFID tag chips and tags with alternative behaviors and methods |
| US8115597B1 (en) * | 2007-03-07 | 2012-02-14 | Impinj, Inc. | RFID tags with synchronous power rectifier |
| KR20090105684A (ko) * | 2008-04-03 | 2009-10-07 | 삼성전자주식회사 | 플래시 메모리 장치 및 그것을 위한 전압 발생회로 |
| US8326256B1 (en) | 2008-07-15 | 2012-12-04 | Impinj, Inc. | RFID tag with MOS bipolar hybrid rectifier |
| KR200452404Y1 (ko) * | 2008-08-11 | 2011-02-28 | (주) 케이.아이.씨.에이 | 플러그의 착탈이 용이한 어댑터 |
| IT1404156B1 (it) * | 2010-12-30 | 2013-11-15 | St Microelectronics Srl | Moltiplicatore di tensione |
| US9214924B2 (en) | 2011-03-25 | 2015-12-15 | Freescale Semiconductor, Inc. | Integrated circuit and method for reducing an impact of electrical stress in an integrated circuit |
| CN103138248B (zh) * | 2011-12-02 | 2016-02-24 | 赛普拉斯半导体公司 | 用于从负载电容电路释放电压的系统和方法 |
| US9013938B1 (en) * | 2011-12-02 | 2015-04-21 | Cypress Semiconductor Corporation | Systems and methods for discharging load capacitance circuits |
| CN103364712A (zh) * | 2012-04-09 | 2013-10-23 | 快捷半导体(苏州)有限公司 | Evs测试电路、evs测试系统和evs测试方法 |
| US11352287B2 (en) | 2012-11-28 | 2022-06-07 | Vitro Flat Glass Llc | High strain point glass |
| US9515548B2 (en) * | 2013-03-15 | 2016-12-06 | Wispry, Inc. | Charge pump systems and methods |
| CN103715883B (zh) * | 2014-01-07 | 2016-08-17 | 上海华虹宏力半导体制造有限公司 | 一种电荷泵电路 |
| US11611276B2 (en) * | 2014-12-04 | 2023-03-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | Charge pump circuit |
| US9491151B2 (en) * | 2015-01-07 | 2016-11-08 | Ememory Technology Inc. | Memory apparatus, charge pump circuit and voltage pumping method thereof |
| US20230327551A1 (en) * | 2022-04-11 | 2023-10-12 | Hamilton Sundstrand Corporation | Dc to dc converter with improved duty ratio and configurable output polarity |
| US12088216B2 (en) | 2022-04-11 | 2024-09-10 | Hamilton Sundstrand Corporation | DC to AC converter with magnitude based on duty ratio |
| CN117665498A (zh) * | 2022-08-30 | 2024-03-08 | 瑞昱半导体股份有限公司 | 用于模拟电子元件的击穿的方法以及设备 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4156838A (en) * | 1978-06-12 | 1979-05-29 | Control Concepts Corporation | Active filter circuit for transient suppression |
| US4679114A (en) * | 1986-04-09 | 1987-07-07 | Carpenter Jr Roy B | Method and equipment for lightning protection through electric potential neutralization |
| CA2019525C (en) * | 1989-06-23 | 1995-07-11 | Takuya Ishii | Switching power supply device |
| US5059815A (en) | 1990-04-05 | 1991-10-22 | Advanced Micro Devices, Inc. | High voltage charge pumps with series capacitors |
| US5008799A (en) | 1990-04-05 | 1991-04-16 | Montalvo Antonio J | Back-to-back capacitor charge pumps |
| JP3373534B2 (ja) * | 1991-07-02 | 2003-02-04 | 株式会社東芝 | 半導体記憶装置 |
| NL9200057A (nl) * | 1992-01-14 | 1993-08-02 | Sierra Semiconductor Bv | Terugkoppelnetwerk voor cmos hoogspanningsgenerator om (e)eprom-geheugen cellen te programmeren. |
| US5301097A (en) * | 1992-06-10 | 1994-04-05 | Intel Corporation | Multi-staged charge-pump with staggered clock phases for providing high current capability |
| US5422586A (en) * | 1993-09-10 | 1995-06-06 | Intel Corporation | Apparatus for a two phase bootstrap charge pump |
| US5553030A (en) | 1993-09-10 | 1996-09-03 | Intel Corporation | Method and apparatus for controlling the output voltage provided by a charge pump circuit |
| DE69530942T2 (de) | 1995-03-09 | 2004-03-11 | Macronix International Co. Ltd., Hsinchu | Ladungspumpe mit reihenkondensator |
| DE69515669T2 (de) * | 1995-10-31 | 2000-07-27 | Stmicroelectronics S.R.L., Agrate Brianza | Negative Ladungspumpenschaltung für elektrisch löschbare Halbleiterspeichervorrichtung |
| ATE185645T1 (de) | 1996-02-15 | 1999-10-15 | Advanced Micro Devices Inc | Negative ladungspumpe für niedrige versorgungsspannung |
| WO1999056383A1 (en) * | 1998-04-24 | 1999-11-04 | Koninklijke Philips Electronics N.V. | Combined capacitive up/down converter |
-
1999
- 1999-09-27 US US09/405,977 patent/US6297974B1/en not_active Ceased
-
2000
- 2000-07-18 KR KR10-2002-7003925A patent/KR100438371B1/ko not_active Expired - Fee Related
- 2000-07-18 WO PCT/US2000/019623 patent/WO2001024348A1/en not_active Ceased
- 2000-07-18 AU AU61093/00A patent/AU6109300A/en not_active Abandoned
- 2000-07-18 JP JP2001527423A patent/JP2003511003A/ja not_active Ceased
- 2000-07-18 CN CNB00816312XA patent/CN1187884C/zh not_active Expired - Fee Related
- 2000-08-24 TW TW089117028A patent/TW473786B/zh not_active IP Right Cessation
-
2003
- 2003-10-02 US US10/678,055 patent/USRE41217E1/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106817021A (zh) * | 2015-12-01 | 2017-06-09 | 台湾积体电路制造股份有限公司 | 电荷泵电路 |
| CN106817021B (zh) * | 2015-12-01 | 2019-09-13 | 台湾积体电路制造股份有限公司 | 电荷泵电路 |
Also Published As
| Publication number | Publication date |
|---|---|
| USRE41217E1 (en) | 2010-04-13 |
| AU6109300A (en) | 2001-04-30 |
| WO2001024348A1 (en) | 2001-04-05 |
| JP2003511003A (ja) | 2003-03-18 |
| US6297974B1 (en) | 2001-10-02 |
| KR20020038773A (ko) | 2002-05-23 |
| CN1399811A (zh) | 2003-02-26 |
| KR100438371B1 (ko) | 2004-07-02 |
| TW473786B (en) | 2002-01-21 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20050202 Termination date: 20180718 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |