CN1187884C - 用来降低集成电路所用电容器上的应力的方法和装置 - Google Patents

用来降低集成电路所用电容器上的应力的方法和装置 Download PDF

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Publication number
CN1187884C
CN1187884C CNB00816312XA CN00816312A CN1187884C CN 1187884 C CN1187884 C CN 1187884C CN B00816312X A CNB00816312X A CN B00816312XA CN 00816312 A CN00816312 A CN 00816312A CN 1187884 C CN1187884 C CN 1187884C
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CN
China
Prior art keywords
voltage
node
capacitor
power state
voltage level
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Expired - Fee Related
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CNB00816312XA
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English (en)
Chinese (zh)
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CN1399811A (zh
Inventor
R·加尼桑
O·W·琼罗斯
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Intel Corp
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Intel Corp
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Publication of CN1399811A publication Critical patent/CN1399811A/zh
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Publication of CN1187884C publication Critical patent/CN1187884C/zh
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of DC power input into DC power output
    • H02M3/02—Conversion of DC power input into DC power output without intermediate conversion into AC
    • H02M3/04—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters
    • H02M3/06—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider
    • H02M3/07—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of DC power input into DC power output
    • H02M3/02—Conversion of DC power input into DC power output without intermediate conversion into AC
    • H02M3/04—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters
    • H02M3/06—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider
    • H02M3/07—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
    • H02M3/073—Charge pumps of the Schenkel-type

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Dc-Dc Converters (AREA)
  • Semiconductor Integrated Circuits (AREA)
CNB00816312XA 1999-09-27 2000-07-18 用来降低集成电路所用电容器上的应力的方法和装置 Expired - Fee Related CN1187884C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/405,977 US6297974B1 (en) 1999-09-27 1999-09-27 Method and apparatus for reducing stress across capacitors used in integrated circuits
US09/405,977 1999-09-27

Publications (2)

Publication Number Publication Date
CN1399811A CN1399811A (zh) 2003-02-26
CN1187884C true CN1187884C (zh) 2005-02-02

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Family Applications (1)

Application Number Title Priority Date Filing Date
CNB00816312XA Expired - Fee Related CN1187884C (zh) 1999-09-27 2000-07-18 用来降低集成电路所用电容器上的应力的方法和装置

Country Status (7)

Country Link
US (2) US6297974B1 (enExample)
JP (1) JP2003511003A (enExample)
KR (1) KR100438371B1 (enExample)
CN (1) CN1187884C (enExample)
AU (1) AU6109300A (enExample)
TW (1) TW473786B (enExample)
WO (1) WO2001024348A1 (enExample)

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US7184313B2 (en) 2005-06-17 2007-02-27 Saifun Semiconductors Ltd. Method circuit and system for compensating for temperature induced margin loss in non-volatile memory cells
JP2007027760A (ja) 2005-07-18 2007-02-01 Saifun Semiconductors Ltd 高密度不揮発性メモリアレイ及び製造方法
US7668017B2 (en) 2005-08-17 2010-02-23 Saifun Semiconductors Ltd. Method of erasing non-volatile memory cells
US7221138B2 (en) 2005-09-27 2007-05-22 Saifun Semiconductors Ltd Method and apparatus for measuring charge pump output current
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KR200452404Y1 (ko) * 2008-08-11 2011-02-28 (주) 케이.아이.씨.에이 플러그의 착탈이 용이한 어댑터
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US9013938B1 (en) * 2011-12-02 2015-04-21 Cypress Semiconductor Corporation Systems and methods for discharging load capacitance circuits
CN103138248B (zh) * 2011-12-02 2016-02-24 赛普拉斯半导体公司 用于从负载电容电路释放电压的系统和方法
CN103364712A (zh) * 2012-04-09 2013-10-23 快捷半导体(苏州)有限公司 Evs测试电路、evs测试系统和evs测试方法
US11352287B2 (en) 2012-11-28 2022-06-07 Vitro Flat Glass Llc High strain point glass
CN105210278B (zh) * 2013-03-15 2018-04-03 维斯普瑞公司 充电泵系统和方法
CN103715883B (zh) * 2014-01-07 2016-08-17 上海华虹宏力半导体制造有限公司 一种电荷泵电路
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106817021A (zh) * 2015-12-01 2017-06-09 台湾积体电路制造股份有限公司 电荷泵电路
CN106817021B (zh) * 2015-12-01 2019-09-13 台湾积体电路制造股份有限公司 电荷泵电路

Also Published As

Publication number Publication date
JP2003511003A (ja) 2003-03-18
KR20020038773A (ko) 2002-05-23
TW473786B (en) 2002-01-21
WO2001024348A1 (en) 2001-04-05
AU6109300A (en) 2001-04-30
CN1399811A (zh) 2003-02-26
KR100438371B1 (ko) 2004-07-02
US6297974B1 (en) 2001-10-02
USRE41217E1 (en) 2010-04-13

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Granted publication date: 20050202

Termination date: 20180718