TW466560B - Surface structure and method of making, and electrostatic wafer clamp incorporating surface structure - Google Patents

Surface structure and method of making, and electrostatic wafer clamp incorporating surface structure Download PDF

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Publication number
TW466560B
TW466560B TW089120456A TW89120456A TW466560B TW 466560 B TW466560 B TW 466560B TW 089120456 A TW089120456 A TW 089120456A TW 89120456 A TW89120456 A TW 89120456A TW 466560 B TW466560 B TW 466560B
Authority
TW
Taiwan
Prior art keywords
patent application
item
scope
surface structure
coating
Prior art date
Application number
TW089120456A
Other languages
English (en)
Chinese (zh)
Inventor
Grant Kenji Larsen
Original Assignee
Varian Semiconductor Equipment
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Varian Semiconductor Equipment filed Critical Varian Semiconductor Equipment
Application granted granted Critical
Publication of TW466560B publication Critical patent/TW466560B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks

Landscapes

  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
TW089120456A 1999-10-01 2000-10-02 Surface structure and method of making, and electrostatic wafer clamp incorporating surface structure TW466560B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US15739899P 1999-10-01 1999-10-01
US23303900P 2000-09-15 2000-09-15

Publications (1)

Publication Number Publication Date
TW466560B true TW466560B (en) 2001-12-01

Family

ID=26854095

Family Applications (1)

Application Number Title Priority Date Filing Date
TW089120456A TW466560B (en) 1999-10-01 2000-10-02 Surface structure and method of making, and electrostatic wafer clamp incorporating surface structure

Country Status (5)

Country Link
EP (1) EP1224687A2 (de)
JP (1) JP4854056B2 (de)
KR (1) KR20020041448A (de)
TW (1) TW466560B (de)
WO (1) WO2001026141A2 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6593699B2 (en) * 2001-11-07 2003-07-15 Axcelis Technologies, Inc. Method for molding a polymer surface that reduces particle generation and surface adhesion forces while maintaining a high heat transfer coefficient
US20040066601A1 (en) * 2002-10-04 2004-04-08 Varian Semiconductor Equipment Associates, Inc. Electrode configuration for retaining cooling gas on electrostatic wafer clamp
WO2007013619A1 (ja) * 2005-07-28 2007-02-01 Kyocera Corporation 試料保持具とこれを用いた試料吸着装置およびこれを用いた試料処理方法
US8023247B2 (en) * 2008-12-10 2011-09-20 Axcelis Technologies, Inc. Electrostatic chuck with compliant coat
JP2014027207A (ja) * 2012-07-30 2014-02-06 Hitachi Chemical Co Ltd 誘電体及びこの誘電体を用いた静電チャック
US20200381271A1 (en) * 2019-05-28 2020-12-03 Applied Materials, Inc. System and apparatus for enhanced substrate heating and rapid substrate cooling
US20230404152A1 (en) * 2020-10-23 2023-12-21 Jt International Sa A Vapour Generating System

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5582771A (en) * 1978-12-20 1980-06-21 Toshiba Corp Ion implanting device
US4457359A (en) * 1982-05-25 1984-07-03 Varian Associates, Inc. Apparatus for gas-assisted, solid-to-solid thermal transfer with a semiconductor wafer
JPS60103829U (ja) * 1983-12-20 1985-07-15 日新電機株式会社 熱伝導性弾性シ−ト
JPS61197500A (ja) * 1985-02-27 1986-09-01 Ulvac Corp 基板の冷却装置
JPS6276146A (ja) * 1985-09-27 1987-04-08 Nissin Electric Co Ltd イオン処理装置用熱伝導体
KR970008322B1 (en) * 1988-01-07 1997-05-23 Varian Associates Method and apparatus fro thermal transfer with a semiconductor wafer in vacuum
US4832781A (en) * 1988-01-07 1989-05-23 Varian Associates, Inc. Methods and apparatus for thermal transfer with a semiconductor wafer in vacuum
JPH0755423B2 (ja) * 1991-03-29 1995-06-14 日本碍子株式会社 ウエハー保持具の製造方法
JPH0633236A (ja) * 1992-07-14 1994-02-08 Nissin Electric Co Ltd 基体保持装置
JP3021264B2 (ja) * 1993-12-13 2000-03-15 アネルバ株式会社 基板加熱・冷却機構
US5822171A (en) * 1994-02-22 1998-10-13 Applied Materials, Inc. Electrostatic chuck with improved erosion resistance
EP0668608A1 (de) * 1994-02-22 1995-08-23 Applied Materials, Inc. Elektrostatischer Substrathalter mit erosionsbeständiger Elektrodenverbindung
JP4079992B2 (ja) * 1994-10-17 2008-04-23 バリアン・セミコンダクター・エクイップメント・アソシエイツ・インコーポレイテッド 導電性被処理体を載置部材に締め付けるための装置及び静電クランピング方法
US5583736A (en) * 1994-11-17 1996-12-10 The United States Of America As Represented By The Department Of Energy Micromachined silicon electrostatic chuck
JPH09172055A (ja) * 1995-12-19 1997-06-30 Fujitsu Ltd 静電チャック及びウエハの吸着方法
JPH09219442A (ja) * 1996-02-09 1997-08-19 Kobe Steel Ltd 静電チャックおよびその製造方法
JP2817698B2 (ja) * 1996-03-12 1998-10-30 日本電気株式会社 半導体基板の冷却装置
US5812362A (en) * 1996-06-14 1998-09-22 Applied Materials, Inc. Method and apparatus for the use of diamond films as dielectric coatings on electrostatic chucks
JP3687877B2 (ja) * 1996-12-18 2005-08-24 信越化学工業株式会社 イオン注入機用プラテン
JPH10335439A (ja) * 1997-06-04 1998-12-18 Shin Etsu Chem Co Ltd 静電チャック
US5903428A (en) * 1997-09-25 1999-05-11 Applied Materials, Inc. Hybrid Johnsen-Rahbek electrostatic chuck having highly resistive mesas separating the chuck from a wafer supported thereupon and method of fabricating same
JP3933289B2 (ja) * 1998-02-02 2007-06-20 太平洋セメント株式会社 静電チャック

Also Published As

Publication number Publication date
WO2001026141A3 (en) 2001-10-25
KR20020041448A (ko) 2002-06-01
JP2003511856A (ja) 2003-03-25
WO2001026141A2 (en) 2001-04-12
JP4854056B2 (ja) 2012-01-11
EP1224687A2 (de) 2002-07-24

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MM4A Annulment or lapse of patent due to non-payment of fees