TW455960B - Semiconductor device and mounting structure of a semiconductor device - Google Patents

Semiconductor device and mounting structure of a semiconductor device Download PDF

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Publication number
TW455960B
TW455960B TW089105276A TW89105276A TW455960B TW 455960 B TW455960 B TW 455960B TW 089105276 A TW089105276 A TW 089105276A TW 89105276 A TW89105276 A TW 89105276A TW 455960 B TW455960 B TW 455960B
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Taiwan
Prior art keywords
component
solder
metal block
electrode
melting point
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TW089105276A
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English (en)
Inventor
Kazunari Imai
Shoji Watanabe
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Shinko Electric Ind Co
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Publication of TW455960B publication Critical patent/TW455960B/zh

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    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
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    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3114—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed the device being a chip scale package, e.g. CSP
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  • Physics & Mathematics (AREA)
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4 5 5 9 6 0 A7 五、發明說明（1 ) ’ 發明背景 1. 發明領域 本發明係有關用以將半導體元件安裝至安裝基材（諸 如，印刷電路板）之結構，及其半導體元件。 2. 相關技藝之描述 用以使半導體元件安裝至印刷電路板之習知技藝結構 之基本觀念於下述將參考第4圖描述之。 首先，半導體元件10及印刷電路板12之一般結構將被 解釋。 電極14被形成而被曝露於半導體元件1〇之表面上。 金屬塊16係事先被附接至電極μ之表面上。金屬境16 係由共鎔焊料製得’以具有一般為球形或柱狀。 桿18係於印刷電路板π之表面積上形成，而半導體元 件係以相對應至於半導體元件丨〇上形成之電極14之位置而 被安裝至印刷電路板12。 其次’用以安裝半導體元件1〇(至印刷電路板12)之結 搆漿被解釋。 半導體元件10被置於印刷電路板12之安裝區域上，如 此，附接至半導體元件10之個別電極14之個別金屬塊16係 置放於印刷電路板12之相對應墊18上。 於保持此位置關係時，熱被施於共鎔焊料之金屬塊16 〇 因此，半導體元件10被置於印刷電路板12上。 於上述之用以安裝半導體元件之習知技藝結構中，共 本紙張尺度適用中國國家標準（CNTS)A4規格（210 X 297公釐） f請先閱讀背面之注意事項再填寫本頁) 裝-------ί 訂---------^, 經濟部智慧財產局員工消費合作社印製 4 A7 B； 經濟部智慧財產局員工消費合泎钍扣契 五、發明說明（ 鎔焊料之球形或柱狀金屬塊16被熔融而於印刷電路板12側 上之整個墊12上流動。藉此，金屬塊〖6如第4圖所示產生 形狀崩裂’降低高度Η » 特別地，當半導體元件係小尺寸時，如第5圖所示之 參考編號10所示者，其中絕緣保護獏3〇係於鈍性膜28上形 成，鋁之電極端子26經其曝露，且電接連至電極端子“之 電路圖案32係於保護膜30上形成，且其中（第5圖之柱形） 電極14係於電路圖案32上形成，其係被包覆於模樹脂妬内 而僅曝露出個別電極14之頂端，且金屬塊16係與其附接之 ，或如第6圖所示，其中金屬塊16係直接附接至於半導體 晶片24之活性元件表面上形成之電極14，其需使金屬塊之 直徑變小，因為電極14之配置間距係小的3作為例子，當 約〇.45 mm直彳;l之球形金屬塊16被形成時，於被您融後之 高度係於約0.3至〇.32mm之範圍。 但是，發現於接連可靠性評估測試（其中，半導體元 件1 〇接受熱沖擊，且同時被安裝至印刷電路板12)中，其 具有之趨勢係於安裝至印刷電路板12後之金屬塊16之高度 愈南，測試結果愈佳。因此，期欲使金屬塊16之高度儘可 能保持大，以實現高可靠性。 再者.當半導體元件接受熱沖擊時，疲勞（例如，破 裂）會產生於半導體元件丨〇上之金屬塊丨6端部或印刷電路 板12上之其端部附近’造成連接失敗。因此，有幫助者係 乓加具有低強度之端部區域之強度’以實施高可靠性， 衧別地.於第5或6圖岬示之丰導體元沣丨〇内之金屬塊 -------------裝--------訂---------線 (請先閱讀背面之沈意事項再填寫本頁)
經濟部智慧財產局員工消费合作社印製 4 5 5 9 6 Ο Α7 __Β7 五、發明說明（3 ) 16之原始高度係低的’其最重要係儘可能保持原始高度以 促進連接可靠性。 發明综述 本發明之目的係提供用以使半導體元件安裝至印刷電 路板之結構，及能進一步穩定半導體元件與印刷電路板間 之連接之半導體元件本身s 本發明之另一目的係解決上述之習知技藝中之問題。 依據本發明’其提供一種用以使具有電極之半導想元 件安裝於具有導電墊之安裝基材上之安裝結構，該結構包 含.金屬塊’其係使該半導體元件之電極電連接至該導電 墊；第一共錯焊料，其用於該金屬塊與該半導體元件之該 電極間之焊接；第二共鎔焊料，其用於該金屬塊與該基材 之該導電墊間之焊接； 該金屬塊之熔點係高於該第一及第二共鎔烊料，且對 於該第一共錄焊料之疲勞之抗性係不同於第二共嫁焊料者 〇 依據如上所述之本發明，因為金屬塊係由具有高於第 一及第二共鎔焊料者之熔點之金屬物料製得，當半導體元 件於其女裝期間加熱時，金屬塊係未被熔融以保持原始高 度。藉此，有利之結果可於連接可靠性評估中獲得，其中 ，半導體元件接受熱沖擊，且同時被安裝至印刷電路板。 再者’為使金屬塊之端部之一者連接至半導鱧元件側上或 於印刷電路板侧上，其甲被認為疲勞（諸如，破裂）係易於 產生於曝露至熱沖擊時，具有較高之抗疲勞之共鎔焊 本纸張尺度適用中關家標準（CNS>A.l規格公复） 6 (請先閱讀背面之注意事項再填寫本頁) 裝--------訂---------線 I. Λ, B7 五、發明說明（4 使用之（其係指相較於用於連接另一端部者而言），如此， 對熱沖擊之耐久性整體被促進，而產生高可靠性s 具有較高之抗疲勞性之共鎔焊料之例子係主要甴Sn 組份及Pb組份組成，且亦由Ag組份、[n組份、Sb組份及 組份之至少二者組成，例如，包含63質量％之化組份叫u 質量。/。之Pb組份、！質量％之1:1组份、〇 7質量％之处組份 及1質量％之Ag組份組成。 具有較高之抗疲勞性<共録焊料之其它例子係如下述 第I表所不.（1)添加至如及朴之二金屬（選自Ag，卜及外） :⑺添加至Sn及Pb之三金屬(Ag，InMb):及⑴添加至Sn 及抑之四金屬（Ag，in，Sb及Cu)。 第I表 1 _ --------- (物料之％丨 Sn Pb Ag ----- In Sb Cu 丨添加二金屬 63 L餘量 ,1.0 _ 1,0 A 0 添加二金屬 餘量 -----— 0 j 1.0 0 0.7 0 添加二金屬 63 餘量 0 1.0 0.7 0 : 添加二金屬 63叫 餘量― 1.0 0 1.0 0 添加二金屬 63 餘量 1.0 ----j 1.0 0.7 〇 添加四金屬 63 餘d ·. —1-1 1.0 1.0 1.0 0.1 作為金屬塊之物料之々，丨；总—a , 丁叶千係南熔點焊料，Cu或Ni ' 其具有r^j於共嫁焊料者之溶點。 依據本發3月之半導艚亓杜^ 守萌7L件之實施例，其中絕緣保護獏 係於半導體元件表面上形忐' $成·且電極瑞子係於其上形成， 旦電連接至電極端子之雷#片 '电路圖案係於絕緣保護琪上形成、 請 先 閱 讀 背 面 注 意 事 項 再 填 1 I裝 訂 線 經濟邹智慧財產局員工消費合作社印絜 ; 4 559， A7 B7 五、發明說明（5 ) ； 且其中該金屬塊係附接至於電路圖案上形成之電極，用於 金屬塊及電極間之共鎔焊料係由63質量％之811組份、343 質量％之Pb組份、1質量。/。之比组份及i質量％之人§組份組 成’以具有高的抗疲勞性，且金屬塊係由具有高於共鎔焊 料者之溶點之金屬物料製得a 依據本發明之半導體元件之另一實施例，其中金屬塊 被附接至於半導體元件上形成之電極端子，用於金屬塊及 電極間之共鎔焊料係由63質量％之Sn組份、14.3質量％2Pb 組份、1質量％之In組份、〇.7質量％之訃組份及1質量ΰ/〇之 Ag組份組成’以具有高的抗疲勞性，且金屬塊係由具有 高於共鎔焊料者之熔點之金屬物料製得。 此等半導體元件對熱沖擊具有高耐用性，於連接可靠 性評估測試中形成高可靠性，其中，半導體元件於被安裝 至印刷電路板後接受熱沖擊’因為用於半導體元件側上之 金屬塊之端部之共鎔焊料（其一般被認為易產生疲勞（諸如 ，破裂））具有比用於印刷電路板侧上之金屬塊端部之另一 共鎔焊料者更高之抗疲勞性。 圖示簡要說明 第1圖係用以解釋依據本發明之半導體元件之安裝結 構之一方面之例示； 第2圖係用以解釋依據本發明之晶片尺寸之半導體元 件之一方面及用以解釋其中此半導體元件被安裝至印刷電 路板之結構之例示； 第3圊係用以解釋依據本發明之晶片尺寸之半導體元 本紙張尺度適用111國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) 裝--------訂---------線 經濟部智慧財產局員工消費合作社印製 ;濟 丨部 .智 :慧 ϊί )局 .肖 ::; .丨让 ::卬 Λ7 B7 五、發明說明（6 ) 件及用以解釋其丰導體元件被安裝至印刷電路板之結構之 另一方面之例示； 第4圖係用以解釋用於半導體元件之習知技藝安裝结 構之例子之例示； 第5圖係用以解釋習知技藝半導體元件之例子之例示 第6圖係用以解釋習知技藝之半導體元件之另一例子 之例示； 第7圖係圖示與習知技藝有關之本發明功效之比較實 驗資料；及 第8圖係顯示用於第7圖實驗之高溫焊料球之載面圖。 實施例之詳細描述 完成本發明之最佳模式將於下述參考附圖作詳細描述 首先’用以安裝半導體元件之結構係參考第丨圖朝 之。於此關係中，半導體元件及印刷電路板之基本結相 質上係相同於有關習知技藝所描述者，相同之參考編號 用於此圖示心表示相㈣件，且其詳細解釋將被除去 半導體元件丨0之電極M經由金屬塊丨6(其係由具有 於共鎔焊料者之'職之㈣物料形幻電連接至印刷電 板12上之如，雖然金属塊⑽形成具有料例子之如 1圖所不之球形輪廓，塊狀物可為柱狀。 液據本發明之韦於半導禮元件之安裝結構之第一特 在於金屬塊邮由具有高於共㈣料者之㈣之金屬物
4 5 59 ο 經濟部智慧財產局員工消費合作社印製 Α7 Β7 五、發明說明（7 ) ， 製得，即使如其後所述之用於使金屬塊16焊接至半導體元 件10之電極14及印刷電路板12之墊18之共鎔焊料被熔融， 金屬塊16未被熔融且保持其原始形狀及高度η。例如，此 金屬物料可為具有比共鎔焊料（由61.9質量％之Sn組份、 38.1質量％之pb組份組成’且具有1 83 °C熔點）更高熔點之 高溶點焊料（Cu或Ni) »於此方面’高炫融焊料可由具有90 至97質量％iPb組份之pb-Sn合金組成。其熔點係約3〇〇°C 。因為金屬塊16可保持預定之所欲高度η，藉此，其可於 連接可靠性評估測試達成有利結果，其中具有之被安裝至 印刷電路板12後之金屬塊16之高度愈大，測試結果愈佳之 趨勢。 雖然共鎔焊料20，22被用以使金屬塊16焊接至半導體 元件10之電極14及印刷電路板12之墊18，本發明之第二特 徵在於用以使金屬塊16連接至半導體元件之電極14之共 銘焊料20及用以使金屬塊16連接至印刷電路板12之整之共 録焊料之一者具有比另一共鎔焊料更高之抗疲勞性。具有 較高抗疲勞性之共鎔焊料之例子係基本上£>1>_511合金组成 者’其被添加特定元素以使結構内之金屬間化合物結晶， 如此Pb之移動及生長被抑制以實現較長之生命期或較佳 之抗疲勞性。其典型之組成物係63質量％之Sn組份、14.3 質量％之Pb組份、1質量。/。之]^組份、〇 7質量。/。之Sb組份 及1質量％之Ag組份，以形成丨83。(：之熔點。 以具有高抗疲勞性之共鎔焊料焊接之部份係藉由連接 可靠性評估測試之結果決定，其中事先安裝至印刷電路板 本紙張尺度適用中國國家標準（CNS)A4規格（210 x 297公g ) 10 ----------- ' --------訂---------吹 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合泎社 A7 ______ . B7 _ 五、發明說明（8 ) 12之丰導體元件丨〇接受熱沖擊。 一般而s，因其需使電極14之表面積小於印刷電路板 12上提供之墊者，金屬塊[6與半導體元件1〇之電極14間之 焊接部份（即，使金屬塊16之端部焊接至半導體元件1〇之 共銥焊料20)之載面積係小於金屬塊16及印刷電路板丨2之 墊1 8間之另一焊接部份者（即，使金屬塊丨6之端部焊接至 印刷電路板12側之共鎔焊料22) 3其被認為諸如破裂之疲 勞更易於產生於連接可靠性評估測試中之使金屬塊16之端 部焊接於丰導體元件1〇上之共鎔焊料2〇。因此，具有較高 抗疲勞性之共鎔焊料被作為共鎔焊料2〇。 相反地，若於半導體元件10上提供之電極之表面積係 大於印刷電路板丨2上提供之墊者且用於使金屬塊16之端部 焊接於印刷電路板12上之共鎵焊料系更易於在連接可靠性 评估測試中產生諸如破裂之疲勞，則具有較高之抗疲勞性 之共您焊料被使用之。 依據此一结構，因為用於使金屬塊16端部之一者連接 至半導體元件】0及印刷電路板1 6側（其被認為接受熱沖擊 時更易於產生諸如破裂之疲勞）上之共鎔焊料於耐久性上 被改良，其可促進半導體元件10整體對抗熱沖擊之安裝結 構，形成高可靠性之達成= 雖然藉由事先添加特定元素至傳統共鎔焊料而獲得之 具有較高抗疲勞性之共鎔焊料被用於上述實施例.一般當 金屬塊丨6使用共鎔焊料焊接至半導體元件1〇之電極14或其 上帶有金屬塊之半導體元件1 0被安裝至印刷電路板丨，時， f帝〈實適甲七:g萏孓嘌盈..CVS.:A4規蜱.：，:j9:_ γ«广~ --—_ ^--------t---------線 (請先閱讀背面之江意事項再填寫本頁) 4 5 5 9 1 A7 __B7_ 五、發明說明（9 ) , 其係採用其中事先以助熔劑塗覆後電極14或墊16以共鎔焊 料糊塗覆之方法，或其中焊料層被置於電極14表面上或墊 18及助熔劑被塗覆於其上之方法。 於此一情況中’上述特殊元素非於起始時被添加至共 鎔焊料，而係添加至助熔劑。當共鎔焊料被加熱及熔融時 ，包含於助熔劑内之特殊元素係與共鎔焊料混口。結果， 可何使事先與特殊元素混合之助溶劑使傳統之共鎵焊料轉 化成具有1¾的抗疲勞性者。 其次，適於上述安裝結構之半導體元件之結構將參考 第2及3圖解釋之。 其後描述之半導體元件係具有已參考第5及6圖之習知 技藝解釋之所謂晶片尺寸輪廓之半導體元件。 首先，第2圖所示之半導體元件ι〇被描述。因為此半 導體元件10基本上係相同於第5圖所示之半導體元件1〇 , 相同之參考編號被用於表示相似之零件。 於此結構中，絕緣保護膜3〇係於半導體晶片24之形成 電極端子之表面上之鈍性膜28上形成，藉此，由例如鋁製 得之電極端子26被曝露出。注意其可為不具有鈍性膜28等 之結構。 電連接至電極端子26之電路圖案32係於保護獏30上形 成’且電極14(或第2圖之柱狀）係於電路圖案32上形成， 且被包覆於模樹脂36内，如此，僅電極14之尖端部被曝露 出°金屬塊16經由共鎔焊料2〇接合至電極14之曝露出之尖 端部。 本紙張尺度適用中_家標準（CNS)A4規格（& χ 297公餐··) (請先閱讀背面之注意事項再填寫本頁) 裝--------訂---------今 經濟部智慧財產局員工消費合作社印製 12 Λ7 B7 五、發明說明（10 ) 此配置之特效在於金屬塊1 6彳糸由具有高於共慰焊料者 之熔點之金屬物料形成，諸如，高熔點焊料，Cu或Ni , 且共錯焊料20係上述之具有高抗疲勞性者。 如前所述，此係因為當半導體元件1〇被安裝至印刷電 路板12時’金屬塊16未被熔融以保證足夠高度，且用於使 金屬塊16之端部連接至半導體元件丨〇上之共鎔焊料2〇之抗 疲勞性破改良’其部份係憑經驗認為於連接可靠性評估測 試中易產生諸如破裂之疲勞。 當半導體元件10被安裝至印刷電路板丨2時，用以使金 屬塊16被安裝至印刷電路板之墊18(未示於第1圖，但相 似於第1圖中所示者）之另一共鎔焊料22係傳統之組成物。 其次’如第3圖所示之半導體元件1〇將被描述。相同 之參考編號被用以表示第2圖所示半導體元件1 〇之相似零 件。 絕緣保護膜30(例如，聚醯亞胺）係於鈍度膜28上形成 ，半導體晶片26之電極端子經其曝露出，且電路圖案32於 保護膜30上形成，用以與電極端子26連接。 第二絕緣保護膜（例如，聚醯亞胺膜8係於其上提供 電路圖案之整個表面上形成3相對應至電路圖案32之部份 <金屬塊16被附接者）之第二保護膜3 8之部份被移除以形成 電極U。 金屬塊16以共鎔焊料20接合至電極14。 以如第2圖所示半導體元件[〇之相同方式.金屬塊16 係由具有高於共銘焊枓者之熔點之金屬物料製成’諸如' ------ -------I ----- — I ! .丨 -----I* (請先閱讀背面之注意事項再填寫本頁) ----1----- - - - - -----_ . 經濟部智慧財產局員工消費合作社印製 45 e7 (…. A7 _______B7__ 五、發明說明（11 ) ， 向溶點焊料，Cu或Ni’且共鎔焊料20係具有如上所述之 抗疲勞性者》 當半導體元件10被安裝至印刷電路板12時，傳統組成 物之共錄焊料被作為用以使金屬域丨6連接至印刷電路板i 2 之墊18者。 於半導體元件10中，已參考第6圖描述之習知技藝， 其中金屬塊16係直接附接至於，例如，半導體晶片24活性 元件表面上形成之電極14 ’金屬塊16可由具有高於共錄焊 料者之炫點之金屬物料製得’諸如，高溶點焊料，Cu或州 ，且用以使電極14連接至金屬塊16之共鎔焊料2〇可為具有 如上所述之高抗疲勞性者。 於第7圖中’本發明之功效及比較例功效之比較實驗 資料被顯示’且第8圖顯示用於第7圖實驗之高溫焊料球， 其中參考編號40表示半導體元素；41係聚醯亞胺；42係金 屬柱（Cu) ; 43係共鎔焊料；44係高溫焊料球；45係接線圖 案；46係包覆物。 依據連接可靠性評估測試，其中如第8圖所示之半導 艘元件係接受熱沖擊。溫度循環係_4〇t至+125。(：。第7圊 之比較資料顯示1%之不可允許之產生於第8圖所示之本發 明半導體元件（第2或3圖）及第5或6圖所示之習知技藝之半 導體元件之循環。如第7圖所示，依據比較例（其中習知技 藝之共鎔焊料被使用）’發生CDF係約600周期。相反地， 依據本發明（其中高溫焊料塊被使用），發生Cdf係約900 周期。 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公爱） 14 (請先閱讀背面之注意事項再填寫本頁) 裝--------訂---------"' 五、發明說明（η ) .為主思，於第7圖所示之比較資料中，本發明係指使 用第1表中之'，添加三種金屬之彈料·，且tt較例係指使用 傳統共鎔焊料。 因此’依據本發明，對熱沖擊具有高耐久性之半導體 元件可因而被獲得。 因為依據本發明之用以安裝半導體元件之結構金屬塊 係由具有南於共錄焊料者之溶點之金屬物料製得，其可於 女裝半導體7L件期間加熱時避免金層塊溶融及保持其原始 *度。因此’有利結果可於連接可靠性評估測試中獲得， 其中半導體疋件於安衆至印刷電路板之狀態中接受熱沖擊 。因為用於使金屬塊端部之任_者連接至半導體元件側或 印刷電路板侧上之共料料（其中t接受熱沖擊時諸如破 裂之f勞易產生)具有比其它用於另一端之連接之共錄焊 料更尚之抗疲勞性，其可改良整體之抗熱沖擊之耐久性及 達成高可靠性。 #者，依據本發料導體元件，因為金屬塊係由具有 2共紅焊料更高溶點之金屬物料製成，其於半導體元件被 安裝時不會藉由施加熱而炼融，以保持原始高度。因為用 於使金屬塊之端部連接於半導體元件之共鎔焊料（其中其 係依經驗認為諸如破裂之疲勞係易於接受熱沖擊時產生） 具有A用於使其它端部連接至印刷電路板惻上之其它共鎔 焊料更高之抗疲勞性.其可於半導體元件被安裝後增加對 抗所施熱沖擊之耐久性，造成高可靠性， …k項技藝者需瞭驊前述描述僅係有關所揭露發明 木 0 ” _ 如 J. f --~-~____ 一 -15 - 4 5 5 9 6(, A7 B7 五、發明說明（13 ) ' 之某些較佳實施例，各種變化及改良可在不偏離本發明精 神及範圍對本發明為之》 元件符號對照 10…半導體元件 32…電路圖案 12…印刷電路板 36…模樹脂 Η…電極 38···第二保護臈 16…金屬塊 40…半導體元素 18…墊 4卜··聚酿亞胺 20, 22, 43…共鎔烊料 42…金屬柱_ 24…半導體晶片 44…高溫焊料球 26…電極端子 45…接線圖案 28…鈍性膜 46…包覆物 30…絕緣保護膜 (請先閱讀背面之注意事項再填寫本頁) 策--------訂---------線' 經濟部智慧財產局員工消費合作社印製 本纸張尺度適用中國國家標準（CNS)A4規格（210 X 297公复） 16

Claims (1)

  1. A8 B8 C8 D8 5 596 0 ^乜年I 六、申請專利範圍 第89105276號專利申請案申請專利範園修正本 修正曰期：90年4月 1. 一種用以使具有電極之半導體元件安裝於具有導體墊之安 裝基材上之安裝結構，該結構包含： 金屬塊，其使該半導體元件之該電極電連接至該導體 墊； 第一共錄焊料，其用於該金屬塊與該半導體元件之該 電極間之焊接： 第二共鎔焊料，其用於該金屬塊與該基材之該導體塾 間之焊接： 該金屬塊之熔點係高於該第_及第二共総焊料之溶 點’且該第一共錄焊料之疲勞抗性係高於該第二共錄焊料 之疲勞抗性。 2. 如申請專利範圍第丨項之安裝結構，其中該第一共嫁焊 料主要係由Sn組份及Pb組份組成，且亦由In組份' 处 組份、Ag組份及Cu組份之至少二者組成。 3. 如申請專利範圍第1項之安裝結構，其中該金屬塊係高 熔點焊料，Cu或Ni，其具有高於該第一及第二共鎔焊 料者之熔點。 4. 一種用於使具有電極之半導體元件安裝於具有導體墊 之安裝基材上之安裝結構，該結構包含： 金屬塊，其使該半導體元件之該電極電連接至該導 體墊； 第一共鎔焊料，其用於該金屬塊與該半導體元件之 該電極間之焊接； — 1 I ί - I I I I I I I ^--1!!! & (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製
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    5. 6. 經濟部智慧財產局員工消費合作社印也取 4 5 5 9 B :；' &8 g 六、申請專利範圍 " ~ 第二共鎔焊料’其用於該金屬塊與該基材之該導體 墊間之焊接； 該金屬塊之熔點係高於該第一及第二共鎔焊料之 炫點’且3玄第二共録焊料之疲勞抗性係高於該第一共錄 焊料之疲勞抗性。 如申請專利範圍第4項之安裝結構，其中該第二共錄焊 料主要係由Sn組份及抑組份組成，且亦由^組份、外 組份、Ag組份及€：11組份之至少二者組成。 如申請專利範圍第4項之安裝結構，其中該金屬塊係高 溶點焊料，Cu或Ni，其具有高於該第一及第二共_ 料者之熔點。 7· —種半導趙元件，包含： 半導體構件，其具有形成電極之表面，於其上第一 電極端子及絕緣保護膜被形成； 線路圓案，其係於該保護膜上形成，如此’被電連 接至該第一電極端子； 金屬塊，其被藉由第二電極端子電連接至該線路圖 案； 共鎔焊料，其用於該金屬塊與該第二電極端子間之 焊接，該共鎔焊料具有高的抗疲勞性且係主要由如組 份與pb組份所組成，且亦可為由In組份、訃組份、Ag 組份以及Cu组份中之至少兩者所組成；及 該金屬塊之熔點係高於該共鎔焊料之熔點。 8. —種半導體元件，其包含： 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐）
    18
    4 5 59 A8 B8 § 六、申請專利範圍 半導體構件，其具有電極； 金屬塊’其係電連接至該電極； 共鎔焊料，其用於該金屬塊與該電極間之焊接，該 共鎔焊料具有高的抗疲勞性且係主要由S η組份及P b組 份組成’且其由卜組份、Sb組份、Ag組份及Cu組成組 成；及 着\ .\該金屬塊之熔點係高於該共鎔焊料之熔點。 9. 申請專利範圍第7或8項所述之半導體元件，其中 該焊料係由63質量％之Sn組份、34.3質量％之Pb組 份、1質量％之111組份、〇.7質量％之Sb組份及1質量％之 Ag組份所組成。 — — — — — — ^---- -----^---— II---I {請先聞讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印？衣 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 19
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