TW425494B - Method for decontaminating microlithography projection lighting devices - Google Patents

Method for decontaminating microlithography projection lighting devices Download PDF

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Publication number
TW425494B
TW425494B TW088111039A TW88111039A TW425494B TW 425494 B TW425494 B TW 425494B TW 088111039 A TW088111039 A TW 088111039A TW 88111039 A TW88111039 A TW 88111039A TW 425494 B TW425494 B TW 425494B
Authority
TW
Taiwan
Prior art keywords
patent application
scope
item
gas
light source
Prior art date
Application number
TW088111039A
Other languages
English (en)
Chinese (zh)
Inventor
Michael Gerhard
Marcus Zehetbauer
Nils Dieckmann
Christine Sieler
Gerd Reisinger
Original Assignee
Zeiss Stiftung
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Zeiss Stiftung filed Critical Zeiss Stiftung
Application granted granted Critical
Publication of TW425494B publication Critical patent/TW425494B/zh

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • B08B7/0057—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like by ultraviolet radiation
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/7005—Production of exposure light, i.e. light sources by multiple sources, e.g. light-emitting diodes [LED] or light source arrays
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G03F7/70116—Off-axis setting using a programmable means, e.g. liquid crystal display [LCD], digital micromirror device [DMD] or pupil facets
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70141—Illumination system adjustment, e.g. adjustments during exposure or alignment during assembly of illumination system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/702—Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70925—Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
    • G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
TW088111039A 1998-07-08 1999-06-30 Method for decontaminating microlithography projection lighting devices TW425494B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19830438A DE19830438A1 (de) 1998-07-08 1998-07-08 Verfahren zur Dekontamination von Mikrolithographie-Projektionsbelichtungsanlagen

Publications (1)

Publication Number Publication Date
TW425494B true TW425494B (en) 2001-03-11

Family

ID=7873297

Family Applications (1)

Application Number Title Priority Date Filing Date
TW088111039A TW425494B (en) 1998-07-08 1999-06-30 Method for decontaminating microlithography projection lighting devices

Country Status (7)

Country Link
US (1) US6936825B2 (und)
EP (1) EP1095315A1 (und)
JP (1) JP2002520839A (und)
KR (1) KR100659698B1 (und)
DE (1) DE19830438A1 (und)
TW (1) TW425494B (und)
WO (1) WO2000003304A1 (und)

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DE19830438A1 (de) 1998-07-08 2000-01-13 Zeiss Carl Fa Verfahren zur Dekontamination von Mikrolithographie-Projektionsbelichtungsanlagen
EP1252553A1 (en) * 2000-11-07 2002-10-30 ASML US, Inc. Refractive index regulation for maintaining optical imaging performance
DE10061248B4 (de) * 2000-12-09 2004-02-26 Carl Zeiss Verfahren und Vorrichtung zur In-situ-Dekontamination eines EUV-Lithographiegerätes
JP3619157B2 (ja) * 2001-02-13 2005-02-09 キヤノン株式会社 光学素子、該光学素子を有する露光装置、洗浄装置及び光学素子の洗浄方法
DE10109031A1 (de) * 2001-02-24 2002-09-05 Zeiss Carl Optisches Strahlführungssystem und Verfahren zur Kontaminationsverhinderung optischer Komponenten hiervon
DE10211611A1 (de) * 2002-03-12 2003-09-25 Zeiss Carl Smt Ag Verfahren und Vorrichtung zur Dekontamination optischer Oberflächen
SG139554A1 (en) * 2002-12-20 2008-02-29 Asml Netherlands Bv Lithographic apparatus, device manufacturing method, and device manufactured thereby
JP2005190904A (ja) * 2003-12-26 2005-07-14 Ushio Inc 極端紫外光源
US7265366B2 (en) * 2004-03-31 2007-09-04 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7136142B2 (en) * 2004-05-25 2006-11-14 Asml Netherlands B.V. Lithographic apparatus having a gas flushing device
KR101252312B1 (ko) 2004-12-23 2013-04-08 칼 짜이스 에스엠테 게엠베하 적어도 하나의 교체 가능한 광학 요소를 포함하는 대물렌즈모듈
DE102005031792A1 (de) * 2005-07-07 2007-01-11 Carl Zeiss Smt Ag Verfahren zur Entfernung von Kontamination von optischen Elementen, insbesondere von Oberflächen optischer Elemente sowie ein optisches System oder Teilsystem hierfür
DE102006049924A1 (de) * 2006-10-19 2008-04-30 Carl Zeiss Smt Ag System zur Reinigung einer Oberfläche eines Bauteils
US8817226B2 (en) * 2007-02-15 2014-08-26 Asml Holding N.V. Systems and methods for insitu lens cleaning using ozone in immersion lithography
JP2008277585A (ja) * 2007-04-27 2008-11-13 Canon Inc 露光装置の洗浄装置及び露光装置
DE102008041628A1 (de) * 2007-09-14 2009-03-19 Carl Zeiss Smt Ag Verfahren zur Reinigung von Vakuumkammern und Vakuumkammer
DE102007051459A1 (de) * 2007-10-27 2009-05-14 Asml Netherlands B.V. Reinigung eines optischen Systems mittels Strahlungsenergie
DE102011079451A1 (de) 2011-07-20 2012-08-09 Carl Zeiss Smt Gmbh Optische Anordnung und Verfahren zur Verringerung von oxidischen Verunreinigungen
US8888295B2 (en) * 2012-07-02 2014-11-18 Disney Enterprises, Inc. Reflective surface tensioning and cleaning system for pepper's ghost illusion
CZ201474A3 (cs) * 2014-01-30 2015-04-29 Masarykova Univerzita Způsob snížení nebo odstranění organické a anorganické kontaminace vakuového systému zobrazovacích a analytických zařízení a zařízení k jeho provádění
KR101698022B1 (ko) * 2015-03-13 2017-02-01 한국표준과학연구원 무색수차 광소자-회전형 타원계측기 및 이를 이용한 시편의 뮬러-행렬 측정 방법
US9625732B1 (en) 2016-01-26 2017-04-18 Disney Enterprises, Inc. Reflective surface tensioning system for Pepper's ghost illusion
DE102016125695A1 (de) * 2016-12-23 2018-01-25 Asml Netherlands B.V. Verfahren zum Betrieb eines EUV – Lithographiesystems zur Vermeidung des chemischen Angriffs von Komponenten des EUV – Lithographiesystems durch Wasserstoff
DE102019213914A1 (de) * 2019-09-12 2021-03-18 Carl Zeiss Smt Gmbh Vorrichtung zur Reinigung einer Oberfläche im Inneren eines optischen Systems

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Also Published As

Publication number Publication date
WO2000003304A1 (de) 2000-01-20
KR100659698B1 (ko) 2006-12-21
US20010026402A1 (en) 2001-10-04
US6936825B2 (en) 2005-08-30
DE19830438A1 (de) 2000-01-13
JP2002520839A (ja) 2002-07-09
KR20010053391A (ko) 2001-06-25
EP1095315A1 (de) 2001-05-02

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