TW416106B - A dicing tape and a method of dicing a semiconductor wafer - Google Patents
A dicing tape and a method of dicing a semiconductor wafer Download PDFInfo
- Publication number
- TW416106B TW416106B TW088113439A TW88113439A TW416106B TW 416106 B TW416106 B TW 416106B TW 088113439 A TW088113439 A TW 088113439A TW 88113439 A TW88113439 A TW 88113439A TW 416106 B TW416106 B TW 416106B
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- Taiwan
- Prior art keywords
- layer
- upper layer
- elongation
- resistance
- elongation resistance
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- 239000004065 semiconductor Substances 0.000 title claims description 26
- 238000000034 method Methods 0.000 title claims description 25
- 239000010410 layer Substances 0.000 claims abstract description 261
- 239000004820 Pressure-sensitive adhesive Substances 0.000 claims abstract description 36
- 238000005520 cutting process Methods 0.000 claims description 77
- 235000012431 wafers Nutrition 0.000 claims description 43
- 238000011156 evaluation Methods 0.000 claims description 10
- 239000003795 chemical substances by application Substances 0.000 claims description 5
- 239000000758 substrate Substances 0.000 abstract description 7
- 230000000052 comparative effect Effects 0.000 description 23
- 239000000463 material Substances 0.000 description 10
- 229920001577 copolymer Polymers 0.000 description 8
- 239000000203 mixture Substances 0.000 description 8
- 239000002274 desiccant Substances 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 239000000853 adhesive Substances 0.000 description 5
- 230000001070 adhesive effect Effects 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 4
- 239000005977 Ethylene Substances 0.000 description 4
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 4
- -1 polypropylene Polymers 0.000 description 4
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 239000012948 isocyanate Substances 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- OMIGHNLMNHATMP-UHFFFAOYSA-N 2-hydroxyethyl prop-2-enoate Chemical compound OCCOC(=O)C=C OMIGHNLMNHATMP-UHFFFAOYSA-N 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N Acrylic acid Chemical class OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 2
- BAPJBEWLBFYGME-UHFFFAOYSA-N Methyl acrylate Chemical compound COC(=O)C=C BAPJBEWLBFYGME-UHFFFAOYSA-N 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 2
- 239000002390 adhesive tape Substances 0.000 description 2
- CQEYYJKEWSMYFG-UHFFFAOYSA-N butyl acrylate Chemical compound CCCCOC(=O)C=C CQEYYJKEWSMYFG-UHFFFAOYSA-N 0.000 description 2
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 description 2
- 239000005038 ethylene vinyl acetate Substances 0.000 description 2
- 239000003999 initiator Substances 0.000 description 2
- 229920001684 low density polyethylene Polymers 0.000 description 2
- 239000004702 low-density polyethylene Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 2
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 1
- JQMFQLVAJGZSQS-UHFFFAOYSA-N 2-[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]piperazin-1-yl]-N-(2-oxo-3H-1,3-benzoxazol-6-yl)acetamide Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)N1CCN(CC1)CC(=O)NC1=CC2=C(NC(O2)=O)C=C1 JQMFQLVAJGZSQS-UHFFFAOYSA-N 0.000 description 1
- OGYSYXDNLPNNPW-UHFFFAOYSA-N 4-butoxy-4-oxobutanoic acid Chemical compound CCCCOC(=O)CCC(O)=O OGYSYXDNLPNNPW-UHFFFAOYSA-N 0.000 description 1
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 1
- 229920002126 Acrylic acid copolymer Polymers 0.000 description 1
- 241000251468 Actinopterygii Species 0.000 description 1
- 229920010126 Linear Low Density Polyethylene (LLDPE) Polymers 0.000 description 1
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- RJUFJBKOKNCXHH-UHFFFAOYSA-N Methyl propionate Chemical compound CCC(=O)OC RJUFJBKOKNCXHH-UHFFFAOYSA-N 0.000 description 1
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- 239000005062 Polybutadiene Substances 0.000 description 1
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- 239000002174 Styrene-butadiene Substances 0.000 description 1
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Chemical compound NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 description 1
- 229920002433 Vinyl chloride-vinyl acetate copolymer Polymers 0.000 description 1
- 229960000583 acetic acid Drugs 0.000 description 1
- 125000005396 acrylic acid ester group Chemical group 0.000 description 1
- 229920006243 acrylic copolymer Polymers 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000007767 bonding agent Substances 0.000 description 1
- MTAZNLWOLGHBHU-UHFFFAOYSA-N butadiene-styrene rubber Chemical compound C=CC=C.C=CC1=CC=CC=C1 MTAZNLWOLGHBHU-UHFFFAOYSA-N 0.000 description 1
- 239000004202 carbamide Substances 0.000 description 1
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- MEOPJXNUOJPKKX-UHFFFAOYSA-N ethene 9H-fluorene Chemical compound C=C.C1=CC=CC=2C3=CC=CC=C3CC12 MEOPJXNUOJPKKX-UHFFFAOYSA-N 0.000 description 1
- UHESRSKEBRADOO-UHFFFAOYSA-N ethyl carbamate;prop-2-enoic acid Chemical compound OC(=O)C=C.CCOC(N)=O UHESRSKEBRADOO-UHFFFAOYSA-N 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
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- RBQRWNWVPQDTJJ-UHFFFAOYSA-N methacryloyloxyethyl isocyanate Chemical compound CC(=C)C(=O)OCCN=C=O RBQRWNWVPQDTJJ-UHFFFAOYSA-N 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 229940017219 methyl propionate Drugs 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920002857 polybutadiene Polymers 0.000 description 1
- 229920001083 polybutene Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
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- 235000019260 propionic acid Nutrition 0.000 description 1
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
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- 238000004513 sizing Methods 0.000 description 1
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- 238000009864 tensile test Methods 0.000 description 1
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
- B28D5/0082—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for supporting, holding, feeding, conveying or discharging work
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/20—Adhesives in the form of films or foils characterised by their carriers
- C09J7/29—Laminated material
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
- C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/10—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet
- C09J2301/12—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet by the arrangement of layers
- C09J2301/122—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet by the arrangement of layers the adhesive layer being present only on one side of the carrier, e.g. single-sided adhesive tape
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/10—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet
- C09J2301/16—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet by the structure of the carrier layer
- C09J2301/162—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet by the structure of the carrier layer the carrier being a laminate constituted by plastic layers only
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
- C09J2301/302—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier the adhesive being pressure-sensitive, i.e. tacky at temperatures inferior to 30°C
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2423/00—Presence of polyolefin
- C09J2423/006—Presence of polyolefin in the substrate
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2433/00—Presence of (meth)acrylic polymer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/10—Methods of surface bonding and/or assembly therefor
- Y10T156/1002—Methods of surface bonding and/or assembly therefor with permanent bending or reshaping or surface deformation of self sustaining lamina
- Y10T156/1026—Methods of surface bonding and/or assembly therefor with permanent bending or reshaping or surface deformation of self sustaining lamina with slitting or removal of material at reshaping area prior to reshaping
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/10—Methods of surface bonding and/or assembly therefor
- Y10T156/1052—Methods of surface bonding and/or assembly therefor with cutting, punching, tearing or severing
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/10—Methods of surface bonding and/or assembly therefor
- Y10T156/1052—Methods of surface bonding and/or assembly therefor with cutting, punching, tearing or severing
- Y10T156/1062—Prior to assembly
- Y10T156/1064—Partial cutting [e.g., grooving or incising]
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/10—Methods of surface bonding and/or assembly therefor
- Y10T156/1052—Methods of surface bonding and/or assembly therefor with cutting, punching, tearing or severing
- Y10T156/1082—Partial cutting bonded sandwich [e.g., grooving or incising]
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/28—Web or sheet containing structurally defined element or component and having an adhesive outermost layer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/28—Web or sheet containing structurally defined element or component and having an adhesive outermost layer
- Y10T428/2848—Three or more layers
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Adhesive Tapes (AREA)
- Dicing (AREA)
Description
416106 五'發明說明（1) ' 發明背景 k發明之镅$ 本發明係關於一種切割膠帶、以及一種採用切割膠帶的 半導體晶圓之切割方法。
Ui關拮街之說明 對於製造半導體晶片的連續步驟來說，在切割步驟中， 先將半導體晶圓固定在切割膠帶上’然後將半導體晶圓切 割成個別的晶片〇切割步驟後是擴篇、拾起及裝配步驟。 在擴縫步驟中，切割膠帶被擴展，從而也擴大了在切割 步驟中形成的切割縫即切縫的寬度，因此增大了晶片間的 間距。在擴縫步驟中增大晶片間距的目的是增加晶片的可 辨認性’從而可防止在拾起步驟拾起晶片時發生晶片與相 鄰晶片接觸而造成損傷。 現今’在擴縫步驟中，是採用擴縫設備來拉伸切割膠帶 的。對於這種擴縫設備來說，用來拉伸的拉伸量和扭矩通 常是設定在某一恒定值的。因此每當所處理的切割I帶的 類型或者粘附在切上的半圓的尺寸發生改變 時’通過改變也^量或扭矩_套：邊^：^^^^煩的。 在上述條件下’當設置在擴縫設備上被拉伸的切割膠帶 基體材料具有高延伸性時’拉伸應力不會被傳遞到粘附半 導體BH圓的區域上’因此就會使晶片間距增大程度達不到 要求°相反’當被拉伸的切割膠帶基體材料具有很低的延 伸I1 生時’由擴縫設備施加的拉伸扭矩就會變得不足，因而晶 片間距會發生不均勻地增大，或者可能造成切割膠帶發生
88113439.ptd 第5頁 416106 五、發明說明（2) 破裂。 日本專利公開公報2488〗揭示一種 的切割膠帶；以壓敏粘合劑層為表面声’、有三層結構 材為令間層，以及以高延伸性片村“層。伸= 知方式使用這種三層切割膠帶時，在沿枯’ s按S 的中心部分的周圍區域不會形成切割縫。但該：導體晶圓 是與已形成切割線的中心部分一起被拉伸❺二，區：= 鏠設備施加的拉伸扭矩就會變得不足，或 ，’、 下’切割膠帶可能會發生破損。 / 、些情況 作為塗佈在切割膠帶表面的壓敏粘合劑，不僅可 用壓敏粘合劑，而且也可採用紫外光（uv)固化的壓敏 劑。通用壓敏粘合劑的彈性模數為1〇4_1〇6牛頓/米2，而^ 外光固化壓敏粘合劑經紫外光輻射後的彈刹 二：牛頓/米2。當壓敏點合劑具有高彈性模數 J步驟’曰曰曰片被推針向上推起時，粘合劑會發生少許變； 而能縮短拾起過程，因此晶片背表面污染就會減少。 ，丄為增大晶片間距，要求擴縫設備有高的扭矩。當壓^ =二劑的彈性模數較低時，在擴縫步驟中施加於切割膠帶 地i力由於壓敏粘合劑的變形而變鬆弛，於是就不能充分 。應力傳遞給切割縫，因而不能得到足夠的晶片 二 埜呈^概述 f此’本發明的目的是糾正先前技術的缺點’ 月 I 均全t -^Γ. /V 1 I _1_ 模數也使切割縫擴大又不會受壓敏枯合劑彈性 、B的 而且切割縫極少破裂的切割膠帶。
416106 -—-— _________ 五、發明說明（3) 本發明的另一目的是提供一種採用切割膠帶的半導體晶 圓之切割方法。 通過下面的說明’本發明的其它目的和優點將更為明 白 根據本發明，提供了 一種包含基體片材和在該基體月材 的一個表面上形成的壓敏粘合劑層的切割膠帶，其中基體 片材包括直接與题敏粘合劑層接觸的上層，與上層相鄰接 的中層以及與中層鄰接的下層’典且上層抗^伸性（A)、 中層抗延伸性（B)和下層抗延伸性（c)滿足方程式（I): B < A (I) 抗延伸性是彈性模數與層厚度的乘積。 較佳的是’上層抗延伸性（A)’中層抗延伸性（B)和下層抗 延伸性（C )滿足方程式（I ): B <A (I) 同時滿足方程式（Π )及（111 ): 〇. 4 SA/C (II)，及 B/C ^0. 5 (III) 在本發明的一較佳具體例中，上層包含兩層或兩層以上 的·•人層’上層的總抗延伸性（A )是由構成上層的每一次層 的層厚度與彈性模數乘積之總和。 在本發明的另一較佳具體例中，下層包含兩層或兩層以 上的次層’下層的總抗延伸性（C)是構成下層的每一次層 的層厚度與彈性模數乘積之總和。 此外’根據本發明，還提供一種將半導體晶圓切割成個
88113439.ptd 第7頁 416106 五、發明說明（4) 別晶片的方法，該方法包括： (a)將半導體晶圓粘附在切割膠帶的基體片材一個表面 上形成的壓敏粘合劑層上，其中基體片材包括直接與壓敏 粘〇劑層接觸的上層，與上層鄰接的中層以及與中層鄰接 的下層，並且上層抗延伸性（A)、中層抗延伸性（B)和下層 抗延伸性（C )滿足方程式（I): B <A ^ C (I) 抗延伸性是彈性模數與層厚度的乘積；接著， ,(b)按此種方式用切割刀片切割半導體晶圓，使得上層 從上表面至下表面完全被割透，中層只從其上表面部分切丨 割至層内某一位置，而下層未被切割。 本文所用術語"彈性模數Μ是指在拉伸變形過程中，應力 (Τ)與應變（ε )之間的關係符合下述比例式時的比例常數 (E) : Τ = Ε ε 術語”彈性模數’’是一常數，也稱為楊氏模數。彈性模數可 採用拉伸試驗機通過拉伸試驗進行測定，並可從得到的拉 伸強度和延伸率曲線算得。本文中揭示的彈性模數的實際 值是採用TENSILON/UTM-4-lOO 型（Orientec Corporation) 拉伸試驗機測定的。 本文所用的術語"抗延伸性，|是指由構成一層片材的,，彈（ 性模數”與構成該層片材的"厚度"相乘所得的值。例如， 上層的抗延伸性是由上層的彈性模數與該上層的厚度相乘 所得的值。當上層或下層是由兩層或兩層以上的次層構成 時’構成上層或下層的各次層的抗延伸性之總和相當於整
88113439.ptd 第8頁 416106 _ 五、發明說明⑸ " ---- 個上層或下層的抗延伸性。 1式之簡要説^ 圖1 =说明十發明之切割膠帶的剖視圖。 圖疋說月半導體晶圓已粘附在圖1所示的本發明切割脲 帶上後形成切割缝的狀態的剖視圖。/ ^ 較佳具體例之凰明 本發明的切割膠帶較佳以此種方式使用：使得上層從上 表面至下表面完全被割透，中層只從其上表面部分切割至 層内某一位置’而下層未被切割。 下文將參照附圖對本發明的切割膠帶作詳細的說明。 圖1以圖解說明根據本發明切割膠帶的一基本具體例 剖視圖。 ' 如圖1所示的切割膠帶丨是由基體片材2和塗佈在基體片 材2表面上的壓敏粘合劑層3構成。該基體片材2是由上層 21、中層22及下層23所構成的。整體觀之，切割膠帶1具 有四層結構’其中’是按壓敏粘合劑層3、上層21、中^ 22和下層23的順序層合的。 根據本發明切割膠帶的基體片材2中，至少上層21或下 層23中一層可以由兩層或兩層以上的次層，較佳為2 — 5層 次層所構成。例如，如圖1中實線和虛線所示，該”基體片 材2可以由包含第一上次層21a和第二上次層21b的上層 21 ’中層22及包含第一下次層23a和第二下次層23b的下層 23所構成。至少上層21及下層23中一層較佳由兩層或兩層 以上的次層所構成，因此’切割膠帶的厚度和/
88113439.ptd 第9買 diBim______ 五、發明說明⑹ * — 性是易於控制的。 當採用如圖1所示的切割膠帶2時，將半導體晶圓4粘附 在1敏粘合劑層3上。然後’如圖2所示，用一切片刀片 (未畫出）將半導體晶圓4切成個別晶片，並形成切割縫。 如圖2所示的切割過程中，半導體晶圓4是從其上表面至下 表面而被完全切透的。壓敏粘合劑層3和上層2丨也是從它 們的上表面至下表面而被完全切透的。排列在上層2丨下面 的中層22只從其上表面被切至層内某一位置，而切割縫$ 未達到排列在中層2 2下面的下層2 3。 當上層21是由兩層或兩層以上的次層構成時，所有次層 都是從它們的上表面至下表面而被完全切透的。當下層23 是由兩層或兩層以上的次層構成時，在所有次層中都不形 成切割縫5。 如上所述，上層21的抗延伸性（A )、中層2 2的抗延伸性 (B)和下層23的抗延伸性（C)滿足方程式（I): B <A (I) 較佳的是，上層21的抗延伸性（A )、中層2 2的抗延伸性 (B)和下層2 3的抗延伸性（C)滿足方程式（I): B <A SC (I) 並同時滿足方程式（II)和（ΠΙ): 0. 4 ^A/C (II)，及 B/A ^0.5 (III)。 在本發明的切割膠帶中，上層2 1的抗延伸性（A)大於中 層22的抗延伸性（B)。如上層21的抗延伸性不是比中層22
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的抗延伸性（B )大的钵 向中層22傳遞作用/，則上層21容易變形，因而會抑制 大於下層23的抗延伸性H如果上層21的抗延伸性(A) 時會由於受到作用:ϊ()的話，切割膠帶在經擴縫步驟 备μ麻0 ! Κ /其的應力而容易發生破裂。 (A/C)為0f) 4式二延伸性（Α)與下層23的抗延伸性（C)的比率 1 p & 间於0.4時，這種不形成切割縫的下層強度 1 '、、+且，因此採用擴縫設備進行實際擴縫步驟時，切 °縫5就會更容易擴大。當比率(A/C)是1. 〇或小於1. 〇時， 則能有效地避免形成切割縫5的區域發生破裂。 當中層22的抗延伸性（B)與下層23的抗延伸性（c)的比率 (B/C)為0. 5或小於〇_ 5，則在採用擴縫設備進行實際擴縫 步驟時’切割縫5會更均勻地擴大。 構成本發明切割膠帶基體片材2的各層材料不受特別的 限制’只要它們的抗延伸性能滿足上述方程式（I )，並進 一步任選地滿足上述方程式（Π )和（I Π)。具有優良耐水 性和耐熱性的材料都是適用的，而合成樹脂薄膜特別適 用。 用作基體片材2中各層的材料可以是由諸如低密度聚乙 烯（LDPE)、線形低密度聚乙烯（LLDPE)、乙烯-丙烯共聚 物、聚丙烯、聚丁烯、聚丁二烯、聚曱基戊烯、乙烯-醋 酸乙烯酯共聚物、乙烯（甲基）丙烯酸共聚物、乙烯（甲基） 丙烯酸曱酯共聚物、乙烯（甲基）丙烯酸乙酯共聚物、聚氯 乙烯、氣乙烯-醋酸乙烯酯共聚物、6烯-氯乙烯_醋酸乙 烯酯共聚物、聚氨酯、聚醯胺、離聚物或苯乙烯-丁二烯
88113439.ptd 第11頁 416106 五、發明說明（8〕 橡膠或其氫化或改性產 23是由兩層或兩層以上 任何材料製造，只要上 性滿足上述要求。 在本發明的切割膠帶 制’只要能實施如上所 層22和下層23中每層厚 上述切割方法中21、2 2 上表面至下表面被完全 至中層内某一位置，而 通常’在切割膠帶中 約1 〇微米至約4 0微米。 較佳為2 0 - 5 0 0微米，更 厚度為20微米或20微米 的。當切割膠帶的總厚 切割膠帶的製造和處理 為5微米或5微米以上， 證切刀尖或切割端中止 下層23。 物製的薄膜。當上層21和/或下層 的次層構成時，這些次層可分別由 層21的抗延伸性與下層2 3的抗延伸 中，基體片材2的總厚度不受限 述的切割方法。而且，上層21、中 度也是不受限制的’只要在實施如 、23各層的厚度能滿足：上層21從 切透，中層2 2只從其上表面部分切 下層2 3未被切割。 形成的切割縫深度（圖2甲11 5h11 )為 因此’本發明的切割膠帶的總厚度 佳為5 0-25 0微米。當切割膠帶的總 以上時’各層的厚度是容易控制 度為5 0 0微米或低於5〇()微米時，該 會變得更容易。中層22的厚度較佳 更佳為1 0微米或1 〇微米以上，以保 在中層22的之中位置，而不會達到 壓敏枯合劑層3可以由久# 3 i , 成。例如，可採用基於橡各：已知的習知壓敏枯合劑形 稀基崎的壓敏枯合劑：ϊ;採==、聚彻或聚乙 的或熱膨脹枯合劑H包括紫外光）固化性 步驟用的壓敏枯合劑。壓敏；=切片步驟及模片鍵合 /整敏枯合劑層3的厚度可以為3_1〇〇
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微米’較佳為1 〇 - 5 〇微米β 本發明切割膠帶1 〜个馎％下刀别膠帶 用輥式刮塗機、凹槽輥塗佈機、口 。例如，可採 機等已知設備將壓敏粘合劑組合物塗:機或逆向塗佈 燥後形成壓㈣合劑層，接著將==襯上’在乾 獨製備好的基體片材2上，然後除去合在已翠 本發明的切割膠帶！。在半導體晶圓4勺方^來^ 前，剝離襯是不必除去的。基體1到切割膠帶1之 法來製造。 |體片材2可用例如共擠塑方 實施例 進一步的說明，但並 現在將通過下列實施例對本發明作 不意味著本發明受這些實施例的限制 實施例1 本實施例係關於本發明切割膠帶丨的製造。在切割膠帶1 中，壓敏粘合劑層3疋層合在由上層21、中層22和下層23 構成的基體片材2的上層21上面的。 用於形成壓敏粘合劑層3的壓敏粘合劑是由1 2 5 (重量）份 多官能氨基甲酸醋丙烯酸酯，1(重量）份多官能異氱酸酯 化合物和5 (重量）份光聚合引發劑與〗〇 0 (重量）份重均分子 量為500000、由丙烯酸丁酯/曱基丙烯酸甲酯/丙烯酸2—羥 乙基酯（50(重量）份/45(重量）份/5(重量）份）製備的共聚 物相共混而製成的丙稀酸酯基、UV可固化的壓敏枯合劑。 採用乙烯曱基丙烯酸共聚物（曱基丙烯酸含量為9%)薄膜 作為上層21。而且’採用乙烯-醋酸乙烯酯共聚物（醋酸乙
88H3439.ptd 第13頁 4i6ioe 、發明說明（10) 烯酯含量為22%)薄膜為中層22，乙祕审A名防 (甲基丙稀酸含量為9%)薄膜為下層。表丨 層1 膜、各層的彈性模數及各層的厚度。 增身 巧本發明切割朦帶】的步驟：下:將如上所述的薄膜組 共擠出ί共擠塑成形為三層基體片材2。採用 畸ij塗機將用甲苯稀釋過的丙烯酸酯基υν可固化的壓敏 粘合劑塗佈在剝離襯上，然後於1001乾燥}分鐘，在剝離 襯上形成壓敏粘合劑層。將該壓敏粘合劑層層合在基體片 材2的上層21的上面，然後除去剝離襯而得到切割膠帶J。 表3列出製得的切割踢帶1中各層的抗延伸性數據。製得的 切割膠帶1按後面所述的評價實施例1和評價實施例2中的 切割方法測定在擴縫步驟中形成的切割縫寬度，得到的結 果列於表5和表6中。 實施例2 本實施例係關於本發明切割膠帶1的製造，其中壓敏粘 合劑層3是層合在基體片材2的上層21上面的。基體片材2 是由包括兩層次層的上層21、中層22及下層23，並按此順 序層合而形成的。採用實施例1中U V 敏粘合劑形 成壓敏粘合劑層3。表1列出了各層薄膜、彈性模數及層厚 度。 製造本發明切割膠帶1的步驟，除薄膜組合物是經四層 共擠出機共擠塑成形為四層基體片材2外’其餘重複實施 例1所述步驟。表3列出了製得的切割膠帶1中各層的抗延 伸性。製得的切割膠帶1按後面所述的評價實施例1令的切
88113439.ptd 第14頁 416106 五、發明說明（11) 割方法測定在擴縫步驟中形成的切割縫的寬度。得結 果列於表5中。 ' 實施例3 本實施例係關於本發明切割膠帶1的製造，其中壓敏枯 合劑層3是層合在基體片材2的上層21上面的/基體片材2 是由上層21、中層22及包括兩層次層的下層23構成的。這 些層是按此順序層合的。採用實施例1中ϋν可固化壓敏枯 合劑形成壓敏粘合劑層3。表1列出了各層薄膜、彈性模數 及層厚度。 ' 製造本發明切割膠帶1的步驟、除薄膜組合物是經四層 共擠出機共擠塑成形為四層基體片材2外，其餘重複實施 例1所述步驟。表3列出了製得的切割勝帶1中各層的抗延 伸性。製得的切割膠帶1按後面所述的評價實施例1令的切 割方法測定在擴縫步驟中形成的切割縫寬度。得到的結果 列於表5中。 實施例4 本實施例係關於本發明切割膠帶1的製造’壓敏枯合劑 層3是層合在基體片材2的上層21上面的。該基體片材2是 由上層21、中層22及下層23構成的。這些層是按此順序層 合的。 形成壓敏粘合劑層3的壓敏粘合劑是通過將〇. 9 (重量）份 多官能異氰酸酯化合物、0. 9 (重量）份光聚合引發劑和1 〇 〇 (重量）份已由100(重量）份、重均分子量為600000、由丙 稀酸丁 S旨/甲基丙浠酸甲醋/丙烯酸2-經乙基自旨（85(重量）
88113439.ptd 第15頁 416106 五、發明說明（12) 伤/ 5(重量）份/1〇(重量）份）製的共聚物與8(重量）份甲基 丙婦酿基氧乙基異氰酸酯反應製成的產物，相共混製成的 丙烯酸酯基UV可固化壓敏粘合劑。 表1列出了各層薄膜、彈性模數和層厚度。 I /表3列出了製得的切割膠帶1中各層的抗延伸性數據。 製得的切割膠帶1按後面所述的評價實施例1中的切割方法 測定在擴縫步驟中形成的切割縫寬度。得到的結果列於表 5中。 實施例5 本實施例中’通過重複實施例3所述步驟製造與實施例3 製得的切割膠帶有同樣結構的本發明切割膠帶1，只是用 於形成壓敏枯合劑層3的壓敏粘合劑是由2 (重量）份多官能 異氰酸S旨化合物和1〇〇(重量）份重均分子量為500000、由 丙烯酸丁酷/甲基丙烯酸甲酯/丙烯酸2_羥乙基酯（75(重 量）份/20(重量）份/5 (重量）份）製備的共聚物相共混而成 的丙姊酸S旨基壓敏枯合劑。 表1列出了各層的彈性模數和層厚度。表3列出了各層的 抗延伸性數據《製得的切割膠帶1按後面所述的評價實施 例1中的切割方法測定在擴縫步驟中形成的切割縫寬度。 得到的結果列於表5中。 在本比較實施例中’ 一比較切割膠帶是通過重複實施例 1所述步驟製造的’只是基體片材僅>由乙歸-甲基丙烯酸酯 共聚物薄膜（甲基丙烯酸酯含量為9%)製的。 ggl!3439.ptd 第 16 頁 416106 五、發明說明（13) --- 表2列出了各層的彈性模數和層厚度。表4列 切割膠帶基體片材的抗延㈣。製得的切割膠帶i按後面 所述的評價實施例1中的切割方法測定在擴縫步驟中形成 的切割縫寬度。得到的結果列於表5中。 比較實施你丨2 在本比較實施例中，一比較切割膠帶是通過重複比較實 施例1所述步驟製造’只是以實施例4中U V可固化的壓敏枯 合劑作為粘合劑。表2列出了各層的彈性模數及層厚度。 表4列出了製得的切割膠帶基體片材的抗延伸性。製得的 切割膠帶1按後面所述的評價實施例1和評價實施例2中的 士刀割方法測定在擴縫步驟中形成的切割縫寬度。得到的結 果列於表5和表6中。 在下表1中，實施例1至4的彈性模數是經紫外光輻射後 測得的。
88113439.ptd 第17頁 416106 五、發明說明（14) 表 0寸 S3 4 .1 蠢f o olrt feT X 寸 Ί 0> 8〇ΐ x 0 Ί 01 8〇ΐ 4Ί(％e=
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οε is xstri ¥ 雲<03S οε .•01 x 8CJ h-玫9^-w® οε5Ϊ h—*55# sz 8〇ϊ χ{Γΐ «•«sifi墓 οεfcEesi hls§s -a昧 rr 3T4 οε?5Ι ΧΚ1—I (？？喜56-) $¥襄 56-s 880E1ss r§Mhls ZT 8〇l 41 03 8〇T 4_Ti=$«*3&-) οε B〇T xKT i=ϊΐίι$-¥&-) ocs β〇ΐ * 寸Ί (？？裏3&-) sssrsilo οτ8SΧ0_6s^s 2 aot-Iέ·6 ^ErJkAn 4¾嘗 oi e〇T x 0 ‘6 aiErlrAn s 01 x Z Ί ^®.DLAn 4|贫《 s ss X 0.8 ss W53fsr l)s 3¾ W蠢 ϊ·*ί s 1¾1^1* —39~~ ilii 88113439. ptd 第18頁 416106 五、發明說明（15) 壓敏粘合劑層 基體片材 比較實施例1 彈性模數（N/m2) 厚度（，// m ) 9. ο Χίο8 10 1.4 ΧΙΟ8 100 比較實施例2 彈性模數（N/m2) μΤΤ^ι°7 1.4 ΧΙΟ8 . 1 -( U m) 10 1 100 --------2、μ 1,1 / _______ 比較實施例1和2的彈性模數是經紫外光輻射後測得的。 4____3 -- ^ 1-----— ------ ------ 抗* 延伸，14. f N / m ) 上層CA) -- 一、 色層（Β) 下層（C) A/C B/C 實施例1 4.2 ΧΙΟ3 -----、/ 9· 6 χ ι 〇ζ 5. 6 X 1〇3 0. 75 0. 17 實施例2 3.1 Χ103 χιο2 7. 〇 X ΙΟ3 0. 45 0.12 實施例3 2.8 Χ103 ------- X 1〇2 '5. 4 X 1〇3 0.52 0.16 實施例4 4. 2 X ΙΟ3 —--- ___?· 5 X 1 ο3 5. 6 X 1 〇3 0.625 0. 45 實施例5 2. 8 X ΙΟ3 8· 4 χ ι〇2 5. 4 X 1〇3 0. 52 0.16
比較j施例1 比較實施例2 抗延伸性（N / m ) 基體片材 14 X103 14 xlO3 赶施例1:切 的測定（1)
第19頁 ^1θί〇6 發明說明（16) 按下述步驟測定切割縫的寬度 將半導體晶圓（直徑=6英吋）分別粘附在由實施例卜5製 造的五個切割膠帶上或由比較實施例1和2製造的兩個切割 膠帶上。用刀片（寬度為3 〇微米）將半導體晶圓切成個別晶 片（1 0毫米X 1 0毫米）。實施切割時要使切割深度，,5h,,完全 穿過上層21 ，但中止在中間層22的居中位置。具體地t， β玄切割縫的切割；未度5 h ，對實施例1和4製造的切割膠帶 為5 0微米，對實施例2、3和5製造的切割膠帶為4 〇微米， 在比較實施例1和2製造的切割膠帶為4〇微米。其後，將實 施例1和4及比較實施例1和2製造的切割膠帶用紫外光轄射 以降低壓敏點合劑層的枯合強度。然後，採用B〇nder_is -lOOUichiden Machinery，Ltd.)實施擴縫步驟，以使切 割膠帶的周圍邊緣從切割框架向下被拉伸1 2毫米拉伸量。 擴縫處理後，測定半導體晶圓的四周區域和中心區域的 各不同位置的切割縫寬度。對兩正交方向的每一點進行測 1。在下文中，一方向稱為Μχ方向μ ，而另一鱼其交又成 直角的方向稱為"Υ方向，| 。測定結果列於表5中\表5 t切 割縫寬度的單位為微米。擴縫前，χ和丫方向的切割縫寬度 都與所用切割刀片的寬度相同，即3〇微米。 表5數據清楚地證明了，比較實施例1製得的比較切割膠 帶中切割縫的增大程度不夠，比較實施例2製得的比較切 割膠帶中切割縫的增大不均自，而本發明切割膠帶中，形 成了均勻和足夠大的晶片間⑬’且不受壓敏枯合劑彈性模
SSI13439.ptd 第20頁 416106 五、發明說明（π) 切縫寬度 切割膠帶 半導體晶圓的 周圍區域方向 半導體晶圓的 中心區域方向 X Y X Y 實施例1 300 350 310 350 實施例2 420 350 370 330 實施例3 530 550 550 600 實施例4 220 250 200 300 實施例5 320 400 350 420 比較實施例1 80 90 80 90 比較實施例2 130 110 180 650 (單位=μ m) 評價實施例2 :切割縫寬度的測量（2) 重複評價實施例1所述過程來評價實施例1和比較實施例 1製造的切割膠帶，只是採用B〇nder-HS-1010( HUGLE ELECTRONICS INC.)，擴展量為30毫米，結果列於 表6中。本實施例中所用的粘合劑往往會使晶片獲得的間 距寬度比比較實施例1中所用的粘合劑使晶片獲得的間距 寬度更窄。因此’對於比較實施例1製得的比較切割膠帶 來說’晶片間距的增大程度不夠，而對於實施例1製得的 本發明切割膠帶來說，形成了足夠大的晶片間距。
88113439.ptd 第21頁
五 發明說明（18)
切割膠帶 半導體 周圍區 '—----〜 實施例1 ---—— 170 比較實施例1 ---- —1L 切縫寬度 半導體晶圓的 _ 中心區域方向 X Y 180 200 一 40 30 ::生Si㈣合劑―=分 雖然已參考特定具體例對本發明作了說明，但對於熟習 此項技術者來說不難的各種變更和變化也被認為是屬於本 發明的原理、精神和範圍的。 1..... 切割膠帶 2..... 基體片材 3..... 壓敏粘合劑層 4..... 半導體晶圓 5..... 切割縫 5h____ 切割縫深度 21____ 上層 21a... 第一上次層 21b... 第二上次層 22____ 中層 元件編號之jgjg
416106 五、發明說明（19) 2 3....下層 23a...第一下次層 23b...第二下次層 ιιηιιι 88113439.ptd 第23頁
Claims (1)
- 416106 六、申請專利範圍 1，一種切割膠帶，該膠帶包含基體片材及在該基體片材 的一表面上形成的壓敏粘合劑層，其中該基體片材包括直 接與該壓敏粘合劑層接觸的上層、與該上層相鄰接的中 層、以及與該中層鄰接的下層；並且該上層的抗延伸性 (A)、該中層的抗延伸性（B)和該下層的抗延伸性（c)滿足 方程式（I ): B <A SC (I) 該抗延伸性是彈性模數與層厚度的乘積。 2. 如申請專利範圍第1項之切割膠帶，其中該上層的該 抗延伸性（A )、該中層的該抗延伸性（B)及該下層的該抗延 伸性（C )又滿足方程式（丨丨）和（〗〗j) 0.4SA/C 客 1 (II)，及 B/CS0.5 (ΠΙ)。 3. 如申請專利範圍第1項之切割膠帶，其中該上層包含 兩層或兩層以上的次層’該上層的總抗延伸性（A)是由構 成該上廣的每一次層的厚度與彈性模數乘積的總和。 4. 如申請專利範圍第1項之切割膠帶，其中該下層包含 兩層或兩層以上的次層，該下層的總抗延伸性（c)是由構 成該下層的每一次層的厚度與彈性模數乘積的總和。 5. 一種將半導體晶圓切割成個別晶片的方法，該方法包， 括： a)將該半導體晶圓粘附在切割膠帶的基體片材之一表面 上形成的壓敏粘合劑層上，其中該基體片材包括直接與該 壓敏粘合劑層接觸的上層、與該上層鄰接的中層、以及與416106 六、申請專利範圍 該中層鄰接的下層，並且該上層的抗延伸性（A)、該中層 的抗延伸性（B)和該下層的抗延伸性（c)滿足方程曰 B <A ⑴ 尸 該抗延伸性是彈性模數與層厚度的乘積，然後 b)按此種方式用刀片切割半導體晶圓：使得該上層從上 表面至下表面完全被割透，該中層只從其上表面部a分切割 至層内某一位置’而該下層未被切割。 6. 如申請專利範圍第5項之方法，其中該上層的該抗延 伸性（A)、該中層的抗延伸性（B)和該下層的抗延 又滿足方程式（11)和（111): 0.4 ^ A/C ^ 1 (II)，及 B/C 龍 5 (III)。 7. 如申請專利範圍第c； u pm 第5項方法，其令該上層包含兩層 或兩層以上的次層，該卜爲从 U ® a Λ上層的總抗延伸性（A)是由構成該 上層的母一久層的厚度鱼强招. 。L „ ^ 汗及，'评性模數乘積的總和。 8. 如申清專利範圍第5頊 ;之方法，其中該下層包含兩層 或兩層以上的次層，該下思 /下層的總抗延伸性（C)是由構成該 下層的每次層的厚度與强，Jvt is 古 . 义兴洋I"生模數乘積的總和。88113439.ptd 第25頁
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| TW088113439A TW416106B (en) | 1998-08-10 | 1999-08-06 | A dicing tape and a method of dicing a semiconductor wafer |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US6444310B1 (zh) |
| EP (1) | EP0979852B1 (zh) |
| KR (1) | KR100603111B1 (zh) |
| CN (1) | CN1138299C (zh) |
| DE (1) | DE69914418T2 (zh) |
| HK (1) | HK1025669A1 (zh) |
| MY (1) | MY122222A (zh) |
| SG (1) | SG74744A1 (zh) |
| TW (1) | TW416106B (zh) |
Families Citing this family (36)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AT411856B (de) * | 2000-10-16 | 2004-06-25 | Datacon Semiconductor Equip | Verfahren zur herstellung einer klebeverbindung von einem scheibenförmigen halbleitersubstrat auf einen flexiblen adhäsiven transportträger sowie einrichtung zur durchführung dieses verfahrens |
| US7141300B2 (en) * | 2001-06-27 | 2006-11-28 | Nitto Denko Corporation | Adhesive sheet for dicing |
| KR101029235B1 (ko) * | 2001-08-10 | 2011-04-18 | 닛토덴코 가부시키가이샤 | 다이싱용 점착 시트 및 다이싱 방법 |
| US6620651B2 (en) * | 2001-10-23 | 2003-09-16 | National Starch And Chemical Investment Holding Corporation | Adhesive wafers for die attach application |
| JP2003338587A (ja) * | 2002-05-21 | 2003-11-28 | Hitachi Ltd | 半導体装置及びその製造方法 |
| JP3838637B2 (ja) * | 2002-06-10 | 2006-10-25 | 日東電工株式会社 | ガラス基板ダイシング用粘着シートおよびガラス基板ダイシング方法 |
| KR100468748B1 (ko) * | 2002-07-12 | 2005-01-29 | 삼성전자주식회사 | 프리컷 다이싱 테이프와 범용 다이싱 테이프를 웨이퍼에 마운팅할 수 있는 다이싱 테이프 부착 장비 및 이를포함하는 인라인 시스템 |
| EP1634673A4 (en) * | 2003-04-25 | 2009-04-08 | Nitto Denko Corp | METHOD FOR PRODUCING A LASER-TREATED PRODUCT AND AN ADHESIVE SHEET FOR A LASER TREATMENT USED FOR THIS PRODUCT |
| CN100416751C (zh) * | 2003-09-26 | 2008-09-03 | 友达光电股份有限公司 | 等臂裂片装置及裂片方法 |
| JP4554908B2 (ja) * | 2003-10-24 | 2010-09-29 | 日東電工株式会社 | ダイシング用粘着シート、ダイシング方法および半導体素子の製造方法 |
| ATE553638T1 (de) * | 2003-12-25 | 2012-04-15 | Nitto Denko Corp | Verfahren zur herstellung durch laser werkstücke |
| US7135385B1 (en) | 2004-04-23 | 2006-11-14 | National Semiconductor Corporation | Semiconductor devices having a back surface protective coating |
| US7015064B1 (en) | 2004-04-23 | 2006-03-21 | National Semiconductor Corporation | Marking wafers using pigmentation in a mounting tape |
| JP2005332982A (ja) * | 2004-05-20 | 2005-12-02 | Renesas Technology Corp | 半導体装置の製造方法 |
| JP2005340655A (ja) * | 2004-05-28 | 2005-12-08 | Shinko Electric Ind Co Ltd | 半導体装置の製造方法および半導体基板の支持構造体 |
| US7101620B1 (en) | 2004-09-07 | 2006-09-05 | National Semiconductor Corporation | Thermal release wafer mount tape with B-stage adhesive |
| JP4873863B2 (ja) * | 2005-01-14 | 2012-02-08 | 日東電工株式会社 | レーザー加工品の製造方法及びレーザー加工用粘着シート |
| JP4854061B2 (ja) * | 2005-01-14 | 2012-01-11 | 日東電工株式会社 | レーザー加工品の製造方法及びレーザー加工用保護シート |
| WO2007094612A1 (en) * | 2006-02-14 | 2007-08-23 | Ls Cable Ltd. | Dicing die attachment film and method for packaging semiconductor using the same |
| US7768141B2 (en) * | 2006-02-14 | 2010-08-03 | Lg Innotek Co., Ltd. | Dicing die attachment film and method for packaging semiconductor using same |
| TW200800584A (en) * | 2006-04-03 | 2008-01-01 | Gunze Kk | Surface protective tape used for back grinding of semiconductor wafer and base film for the surface protective tape |
| JP4847199B2 (ja) * | 2006-04-25 | 2011-12-28 | 株式会社ディスコ | ウエーハに装着された接着フィルムの破断方法 |
| JP4925173B2 (ja) * | 2006-06-02 | 2012-04-25 | 日東電工株式会社 | ダイシング用粘着シート、及びそれを用いた被切断体の加工方法 |
| US8030138B1 (en) | 2006-07-10 | 2011-10-04 | National Semiconductor Corporation | Methods and systems of packaging integrated circuits |
| EP2998987B1 (en) * | 2006-12-05 | 2017-03-01 | Lintec Corporation | Laser dicing sheet and method for manufacturing chip body |
| US8232185B2 (en) * | 2007-04-05 | 2012-07-31 | Hitachi Chemical Company, Ltd. | Method for manufacturing semiconductor chip, adhesive film for semiconductor, and composite sheet using the film |
| KR101191121B1 (ko) | 2007-12-03 | 2012-10-15 | 주식회사 엘지화학 | 다이싱 다이본딩 필름 및 다이싱 방법 |
| US7749809B2 (en) * | 2007-12-17 | 2010-07-06 | National Semiconductor Corporation | Methods and systems for packaging integrated circuits |
| US8048781B2 (en) * | 2008-01-24 | 2011-11-01 | National Semiconductor Corporation | Methods and systems for packaging integrated circuits |
| KR100963675B1 (ko) * | 2008-03-14 | 2010-06-15 | 제일모직주식회사 | 반도체 패키징용 복합기능 테이프 및 이를 이용한 반도체소자의 제조방법 |
| US20100015329A1 (en) * | 2008-07-16 | 2010-01-21 | National Semiconductor Corporation | Methods and systems for packaging integrated circuits with thin metal contacts |
| JP2012033637A (ja) | 2010-07-29 | 2012-02-16 | Nitto Denko Corp | ダイシングテープ一体型半導体裏面用フィルム及び半導体装置の製造方法 |
| US9793239B2 (en) | 2015-09-25 | 2017-10-17 | Advanced Micro Devices, Inc. | Semiconductor workpiece with selective backside metallization |
| JP7041476B2 (ja) * | 2017-07-04 | 2022-03-24 | 日東電工株式会社 | ダイシングテープおよびダイシングダイボンドフィルム |
| CN111526613B (zh) * | 2020-05-18 | 2022-07-12 | 无锡格菲电子薄膜科技有限公司 | 一种铜电极石墨烯电热膜及其制备方法 |
| US20230064066A1 (en) * | 2021-08-27 | 2023-03-02 | Texas Instruments Incorporated | Wafer-level backside layer for semiconductor apparatus |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3850451T2 (de) * | 1987-07-08 | 1995-03-09 | Furukawa Electric Co Ltd | Strahlungsvernetzbare Klebestreifen. |
| US5149586A (en) * | 1987-07-08 | 1992-09-22 | Furukawa Electric Co., Ltd. | Radiation-curable adhesive tape |
| US5281473A (en) * | 1987-07-08 | 1994-01-25 | Furakawa Electric Co., Ltd. | Radiation-curable adhesive tape |
| DE4230784A1 (de) * | 1992-09-15 | 1994-03-17 | Beiersdorf Ag | Durch Strahlung partiell entklebendes Selbstklebeband (Dicing Tape) |
| JPH08124881A (ja) * | 1994-10-28 | 1996-05-17 | Nec Corp | ダイシングテープ及びそれを用いた半導体装置の組立方 法 |
| JP3955659B2 (ja) * | 1997-06-12 | 2007-08-08 | リンテック株式会社 | 電子部品のダイボンディング方法およびそれに使用されるダイボンディング装置 |
-
1999
- 1999-08-05 EP EP99115442A patent/EP0979852B1/en not_active Expired - Lifetime
- 1999-08-05 DE DE69914418T patent/DE69914418T2/de not_active Expired - Fee Related
- 1999-08-06 MY MYPI99003360A patent/MY122222A/en unknown
- 1999-08-06 TW TW088113439A patent/TW416106B/zh not_active IP Right Cessation
- 1999-08-09 KR KR1019990032549A patent/KR100603111B1/ko not_active IP Right Cessation
- 1999-08-10 US US09/371,101 patent/US6444310B1/en not_active Expired - Lifetime
- 1999-08-10 CN CNB991175212A patent/CN1138299C/zh not_active Expired - Fee Related
- 1999-08-10 SG SG1999003851A patent/SG74744A1/en unknown
-
2000
- 2000-08-08 HK HK00104924A patent/HK1025669A1/xx not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| DE69914418T2 (de) | 2004-12-02 |
| EP0979852B1 (en) | 2004-01-28 |
| HK1025669A1 (en) | 2000-11-17 |
| SG74744A1 (en) | 2000-08-22 |
| US6444310B1 (en) | 2002-09-03 |
| CN1244726A (zh) | 2000-02-16 |
| KR20000017190A (ko) | 2000-03-25 |
| KR100603111B1 (ko) | 2006-07-20 |
| CN1138299C (zh) | 2004-02-11 |
| DE69914418D1 (de) | 2004-03-04 |
| EP0979852A3 (en) | 2000-04-19 |
| MY122222A (en) | 2006-03-31 |
| EP0979852A2 (en) | 2000-02-16 |
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| GD4A | Issue of patent certificate for granted invention patent | ||
| MM4A | Annulment or lapse of patent due to non-payment of fees |