TW410414B - Electrostatic wafer clamp having low particulate contamination of wafers - Google Patents
Electrostatic wafer clamp having low particulate contamination of wafers Download PDFInfo
- Publication number
- TW410414B TW410414B TW088105658A TW88105658A TW410414B TW 410414 B TW410414 B TW 410414B TW 088105658 A TW088105658 A TW 088105658A TW 88105658 A TW88105658 A TW 88105658A TW 410414 B TW410414 B TW 410414B
- Authority
- TW
- Taiwan
- Prior art keywords
- clamping surface
- dielectric layer
- patent application
- clamping
- scope
- Prior art date
Links
- 235000012431 wafers Nutrition 0.000 title claims description 107
- 238000011109 contamination Methods 0.000 title abstract description 5
- 238000000576 coating method Methods 0.000 claims abstract description 49
- 239000011248 coating agent Substances 0.000 claims abstract description 48
- 239000004065 semiconductor Substances 0.000 claims abstract description 29
- 229910052758 niobium Inorganic materials 0.000 claims abstract description 14
- 239000010955 niobium Substances 0.000 claims abstract description 14
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims abstract description 14
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 14
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 11
- 229910052799 carbon Inorganic materials 0.000 claims description 11
- 230000002079 cooperative effect Effects 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 11
- 239000000853 adhesive Substances 0.000 claims description 9
- 230000001070 adhesive effect Effects 0.000 claims description 9
- 229910003460 diamond Inorganic materials 0.000 claims description 9
- 239000010432 diamond Substances 0.000 claims description 9
- 239000013078 crystal Substances 0.000 claims description 8
- 230000000712 assembly Effects 0.000 claims description 7
- 238000000429 assembly Methods 0.000 claims description 7
- 230000005611 electricity Effects 0.000 claims description 6
- 229910003481 amorphous carbon Inorganic materials 0.000 claims description 5
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 5
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 5
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 5
- 230000003068 static effect Effects 0.000 claims description 5
- 238000002955 isolation Methods 0.000 claims description 3
- 239000010419 fine particle Substances 0.000 claims description 2
- GUWKQWHKSFBVAC-UHFFFAOYSA-N [C].[Au] Chemical compound [C].[Au] GUWKQWHKSFBVAC-UHFFFAOYSA-N 0.000 claims 1
- 238000009825 accumulation Methods 0.000 claims 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims 1
- 230000003647 oxidation Effects 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 claims 1
- 230000007704 transition Effects 0.000 claims 1
- 239000002245 particle Substances 0.000 description 40
- 239000012212 insulator Substances 0.000 description 39
- 239000010410 layer Substances 0.000 description 20
- 238000010884 ion-beam technique Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 7
- 238000005468 ion implantation Methods 0.000 description 6
- 230000002829 reductive effect Effects 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 238000001816 cooling Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000005686 electrostatic field Effects 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- -1 polytetrafluoroethylene Polymers 0.000 description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 description 2
- 239000003870 refractory metal Substances 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 229920006356 Teflon™ FEP Polymers 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- CFJRGWXELQQLSA-UHFFFAOYSA-N azanylidyneniobium Chemical compound [Nb]#N CFJRGWXELQQLSA-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 235000012054 meals Nutrition 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- ZPZCREMGFMRIRR-UHFFFAOYSA-N molybdenum titanium Chemical compound [Ti].[Mo] ZPZCREMGFMRIRR-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000010561 standard procedure Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical group FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 description 1
- 229920001169 thermoplastic Polymers 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T279/00—Chucks or sockets
- Y10T279/23—Chucks or sockets with magnetic or electrostatic means
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/058,944 US5969934A (en) | 1998-04-10 | 1998-04-10 | Electrostatic wafer clamp having low particulate contamination of wafers |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW410414B true TW410414B (en) | 2000-11-01 |
Family
ID=22019869
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW088105658A TW410414B (en) | 1998-04-10 | 1999-04-09 | Electrostatic wafer clamp having low particulate contamination of wafers |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US5969934A (enExample) |
| EP (1) | EP1070381B1 (enExample) |
| JP (1) | JP2002511662A (enExample) |
| KR (1) | KR100625712B1 (enExample) |
| DE (1) | DE69904709T2 (enExample) |
| TW (1) | TW410414B (enExample) |
| WO (1) | WO1999053603A1 (enExample) |
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| KR100308209B1 (ko) * | 1998-06-20 | 2001-11-30 | 윤종용 | 리플로우공정을 위한 히터 어셈블리의 클램프 |
| US6839217B1 (en) | 1999-10-01 | 2005-01-04 | Varian Semiconductor Equipment Associates, Inc. | Surface structure and method of making, and electrostatic wafer clamp incorporating surface structure |
| US6538873B1 (en) | 1999-11-02 | 2003-03-25 | Varian Semiconductor Equipment Associates, Inc. | Active electrostatic seal and electrostatic vacuum pump |
| US6362946B1 (en) | 1999-11-02 | 2002-03-26 | Varian Semiconductor Equipment Associates, Inc. | Electrostatic wafer clamp having electrostatic seal for retaining gas |
| JP5165817B2 (ja) * | 2000-03-31 | 2013-03-21 | ラム リサーチ コーポレーション | 静電チャック及びその製造方法 |
| US20030107865A1 (en) * | 2000-12-11 | 2003-06-12 | Shinsuke Masuda | Wafer handling apparatus and method of manufacturing the same |
| KR20020046214A (ko) * | 2000-12-11 | 2002-06-20 | 어드밴스드 세라믹스 인터내셔날 코포레이션 | 정전척 및 그 제조방법 |
| US6528767B2 (en) * | 2001-05-22 | 2003-03-04 | Applied Materials, Inc. | Pre-heating and load lock pedestal material for high temperature CVD liquid crystal and flat panel display applications |
| JP2002359281A (ja) * | 2001-06-01 | 2002-12-13 | Ngk Spark Plug Co Ltd | セラミックヒータ及びその製造方法 |
| US6483690B1 (en) | 2001-06-28 | 2002-11-19 | Lam Research Corporation | Ceramic electrostatic chuck assembly and method of making |
| US6684523B2 (en) | 2001-08-27 | 2004-02-03 | Applied Materials, Inc. | Particle removal apparatus |
| US6779226B2 (en) | 2001-08-27 | 2004-08-24 | Applied Materials, Inc. | Factory interface particle removal platform |
| US20030037801A1 (en) * | 2001-08-27 | 2003-02-27 | Applied Materials, Inc. | Method for increasing the efficiency of substrate processing chamber contamination detection |
| US6805137B2 (en) | 2001-08-27 | 2004-10-19 | Applied Materials, Inc. | Method for removing contamination particles from substrates |
| US20030037800A1 (en) * | 2001-08-27 | 2003-02-27 | Applied Materials, Inc. | Method for removing contamination particles from substrate processing chambers |
| US6878636B2 (en) * | 2001-08-27 | 2005-04-12 | Applied Materials, Inc. | Method for enhancing substrate processing |
| US6725564B2 (en) | 2001-08-27 | 2004-04-27 | Applied Materials, Inc. | Processing platform with integrated particle removal system |
| JP2003269549A (ja) * | 2002-03-19 | 2003-09-25 | Tsubakimoto Chain Co | 耐摩耗性チェーン |
| US6660665B2 (en) * | 2002-05-01 | 2003-12-09 | Japan Fine Ceramics Center | Platen for electrostatic wafer clamping apparatus |
| US20040055709A1 (en) * | 2002-09-19 | 2004-03-25 | Applied Materials, Inc. | Electrostatic chuck having a low level of particle generation and method of fabricating same |
| US20040066601A1 (en) * | 2002-10-04 | 2004-04-08 | Varian Semiconductor Equipment Associates, Inc. | Electrode configuration for retaining cooling gas on electrostatic wafer clamp |
| US20040226516A1 (en) * | 2003-05-13 | 2004-11-18 | Daniel Timothy J. | Wafer pedestal cover |
| TWI254188B (en) * | 2003-07-23 | 2006-05-01 | Asml Netherlands Bv | Lithographic projection apparatus and article holder therefor |
| US6946403B2 (en) * | 2003-10-28 | 2005-09-20 | Axcelis Technologies, Inc. | Method of making a MEMS electrostatic chuck |
| US7824498B2 (en) * | 2004-02-24 | 2010-11-02 | Applied Materials, Inc. | Coating for reducing contamination of substrates during processing |
| DE202005011367U1 (de) | 2005-07-18 | 2005-09-29 | Retzlaff, Udo, Dr. | Transfer-ESC auf Wafer-Basis |
| CN100362644C (zh) * | 2005-12-07 | 2008-01-16 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 静电卡盘 |
| US20070181420A1 (en) * | 2006-02-07 | 2007-08-09 | Ming-Tung Wang | Wafer stage having an encapsulated central pedestal plate |
| KR101553422B1 (ko) * | 2007-12-19 | 2015-09-15 | 램 리써치 코포레이션 | 플라즈마 처리 장치를 위한 복합 샤워헤드 전극 어셈블리 |
| TWI484576B (zh) | 2007-12-19 | 2015-05-11 | Lam Res Corp | 半導體真空處理設備用之薄膜黏接劑 |
| TWI475594B (zh) | 2008-05-19 | 2015-03-01 | Entegris Inc | 靜電夾頭 |
| US8169769B2 (en) * | 2008-09-11 | 2012-05-01 | Tel Epion Inc. | Electrostatic chuck power supply |
| US7948734B2 (en) * | 2008-09-11 | 2011-05-24 | Tel Epion Inc. | Electrostatic chuck power supply |
| US8861170B2 (en) | 2009-05-15 | 2014-10-14 | Entegris, Inc. | Electrostatic chuck with photo-patternable soft protrusion contact surface |
| JP5808750B2 (ja) * | 2009-11-30 | 2015-11-10 | ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ | 傾斜側壁を備える静電チャック |
| US8840754B2 (en) * | 2010-09-17 | 2014-09-23 | Lam Research Corporation | Polar regions for electrostatic de-chucking with lift pins |
| US9633885B2 (en) * | 2014-02-12 | 2017-04-25 | Axcelis Technologies, Inc. | Variable electrode pattern for versatile electrostatic clamp operation |
| WO2016135565A1 (en) | 2015-02-23 | 2016-09-01 | M Cubed Technologies, Inc. | Film electrode for electrostatic chuck |
| KR20190104040A (ko) * | 2017-01-27 | 2019-09-05 | 울트라테크 인크. | 기판-바이어스된 원자층 증착을 위한 향상된 전기적 절연을 가진 척 시스템 및 방법 |
| US12327749B2 (en) * | 2022-09-21 | 2025-06-10 | Intel Corporation | Carrier chuck and methods of forming and using thereof |
| WO2025204031A1 (ja) * | 2024-03-27 | 2025-10-02 | 日本発條株式会社 | ステージ、およびステージの作製方法 |
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| JPH09283605A (ja) * | 1996-04-09 | 1997-10-31 | Canon Inc | 基板の吸着保持装置およびその製造方法 |
| US5825607A (en) * | 1996-05-08 | 1998-10-20 | Applied Materials, Inc. | Insulated wafer spacing mask for a substrate support chuck and method of fabricating same |
| TW303505B (en) * | 1996-05-08 | 1997-04-21 | Applied Materials Inc | Substrate support chuck having a contaminant containment layer and method of fabricating same |
| US5754391A (en) * | 1996-05-17 | 1998-05-19 | Saphikon Inc. | Electrostatic chuck |
| US5812362A (en) * | 1996-06-14 | 1998-09-22 | Applied Materials, Inc. | Method and apparatus for the use of diamond films as dielectric coatings on electrostatic chucks |
-
1998
- 1998-04-10 US US09/058,944 patent/US5969934A/en not_active Expired - Lifetime
-
1999
- 1999-04-08 WO PCT/US1999/007752 patent/WO1999053603A1/en not_active Ceased
- 1999-04-08 KR KR1020007011266A patent/KR100625712B1/ko not_active Expired - Fee Related
- 1999-04-08 EP EP99916529A patent/EP1070381B1/en not_active Expired - Lifetime
- 1999-04-08 JP JP2000544055A patent/JP2002511662A/ja active Pending
- 1999-04-08 DE DE69904709T patent/DE69904709T2/de not_active Expired - Fee Related
- 1999-04-09 TW TW088105658A patent/TW410414B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| US5969934A (en) | 1999-10-19 |
| JP2002511662A (ja) | 2002-04-16 |
| WO1999053603A1 (en) | 1999-10-21 |
| DE69904709D1 (de) | 2003-02-06 |
| KR100625712B1 (ko) | 2006-09-20 |
| DE69904709T2 (de) | 2003-11-13 |
| EP1070381B1 (en) | 2003-01-02 |
| KR20010042592A (ko) | 2001-05-25 |
| EP1070381A1 (en) | 2001-01-24 |
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| GD4A | Issue of patent certificate for granted invention patent | ||
| MM4A | Annulment or lapse of patent due to non-payment of fees |