TW409422B - Method for passivating organic semiconductor devices - Google Patents

Method for passivating organic semiconductor devices Download PDF

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Publication number
TW409422B
TW409422B TW085102611A TW85102611A TW409422B TW 409422 B TW409422 B TW 409422B TW 085102611 A TW085102611 A TW 085102611A TW 85102611 A TW85102611 A TW 85102611A TW 409422 B TW409422 B TW 409422B
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Taiwan
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metal
emitting device
dielectric material
organic light
sealing
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TW085102611A
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Thomas B Harvey Iii
Franky So
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Motorola Inc
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80Constructional details
    • H10K59/87Passivation; Containers; Encapsulations
    • H10K59/873Encapsulations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/84Passivation; Containers; Encapsulations
    • H10K50/842Containers
    • H10K50/8423Metallic sealing arrangements
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/84Passivation; Containers; Encapsulations
    • H10K50/844Encapsulations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/49Method of mechanical manufacture
    • Y10T29/49002Electrical device making

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)
  • Led Devices (AREA)

Description

409422 Λ7 B7 "' ------ _ . 五、發明説明(1) 發明範圍 衣發明係關於有機裝置’更特定言之,係闞於經&彳匕之 有機裝置及鈍化之方法。 發明背景 有機裝置,特別是有機發光二極体(LEDs)等,通常利用一 層的反應性金屬在陰極中來保證有效之電予注射電極及低 操作電壓。然而,此類反應性金屬易受氧和水分之影響, 特別在操作期間,因爲金屬的氧化限制了裝置之壽命。通 常需要密封而獲得長期穩定性和長壽命。利用數種型式的 密封,最普遍的密封是無機材料例如金屬等。 於製造和鈍化有機裝置時發生之一個另外問題是該項事 實的結果:有機裝置的有機層不能耐受極高溫度(即通常大 於約300°C)。在許多實例中,甚至接近有機層的臨界溫度, 特別是如果維持昇高之溫度歷相當長久時間,則可使有機 材料降解而減低可靠性及/或壽命。 經濟部中央橾準局貝工消費合作社中掣 密封有機裝置的一種最近方法是使用一種無機材料(例如 陶瓷或金屬)外覆彼等而獲得密封a然而,有機裝置極易受 於澱積陶瓷和金屬時通常所需要之高溫之影響。因此,爲 了符合低溫標準,通常必須將陶瓷或金屬材料經由pECVD (光電化學汽相澱積)方法予以澱積。使用此種密封之方法 的主要問題即,在PECVD澱積期間,有對於有機裝置形成 輕射損害之極大可能性。 因此’極需要發明密封有機裝置的相當價廉且便利之方 法0 X297公綮} (請先聞讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家榡準(CN,S ) Λ4規格( 經濟部中央標準局員工消费合作社印製 409422 at __ B7 五、發明説明(2 ) 本發明的一個目的在提供鈍化有機裝置的新穎而改進之 方法。 本發明的一個目的在相當低溫度下提供鈍化有機裝置的 新穎而改進之方法。 本發明的另外目的在提供鈍化有機裝置的新穎而改進之 方法’此方法之實施相當便利且價廉。 發明之概诚 上述各種問題和其他問題在本發明之鈍化有機裝置之方 法中至少予以部份解決’而上述各目的及其他者在鈍化經 定位在一支持基材上之有機裝置的方法中予以實現,此方 法包括下列步驟:用介電材料的—片低溫澱積之薄膜外覆 該有機裝置,幷密封式接合一個無機層在該介電材料上以 便實質上氣密密封該有機裝置。 在一典型之具體實施例中,介電層是si〇2而無機層是一個 金屬罐。亦在某些具體實施例中,可提供一種吸氣劑材料 在金屬罐中,以移除任何殘餘之氧或水分,以及消除可能 漏入之少量氧或水分,藉以更進—步增加有機裝置的壽 關於各圖式,遍及各圖中相同數字表示相同部份: 圖1是有機發光二極體的簡化之戴面圖;及 圖2是説明依照本發明純化的方法之有機發光二極體陣列 的簡化之截面圓。 本紙張尺度適用中國國家標隼{CNS ) Λ4規格U10X297公釐) .I.------ 裝------訂-----—線 (請先閲讀.背面之注意事項再填寫本頁) 409422 A7 B7 經濟部中央標準局員工消費合作社印製 五、發明説明(3 ) 較佳具體f施例説明 特別述及圖I,舉例説明一種基材10,在此特定具體實施 例中,它是某種光學上透明之材料,例如玻璃、石英,一 種透明半導體材料之類等。將一個典型有機發光二極體12 (LED)定位在基材丨0上’通常係經由以製造有機LEDs之各種 方法的任何一種方法直接製造LED丨2在基材ί〇上。 在此特別實例中,LED 12包括經澱積在基材丨〇之上表面上 之透明導電材料的一片薄膜14,例如錮一錫一氧化物(1丁〇)等。 將一個有機電激發光層16經由任何便利之方式而澱積在導 電層14的上表面上。有機電激發光層丨6通常代表LED ]2的 活性有機層,并可包括自一至數個子層,如精於此項技藝 之人士所了解者〇將一個金屬接觸點18定位在有機電激發 光層16的上表面上而充作2之陰極。接觸點丨8包括至少一薄 層的一種反應性、低功函數金屬,如上所述,此金屬易受 周圍大氣中之氧和水分含量之影響。因此,必須予以鈍化 而提供可靠性和合理之壽命。 依照本發明,鈍化一或多個LEDs之方法舉例説明於圖2 中。在圖2中,將許多LEDs舉例説明成爲一有機LED陣列20 之形式。如精於該項技藝之人士可了解者,將一層的透明 導電材料22例如ITO定位在基材23的上表面上,此基材亦是 透明’且舉例而言,可能是玻璃等。將層22形成列狀形 態’并將許多的LEDs形成在層22之各列上。將每一LEDs之 上邵金屬接觸點24連接成爲行,以便陣列20中之每一 LEDs 是個別可定址。 -6 - 本紙張从朗hug Uiox ~, -Ϊ . ί 裝--------,.訂------線 (請先閱讀背面之注意事項再填寫本頁) 經濟部中央標準局貝工消費合作社印裝 409422 A7 ________B7 五、發明説明(4 ) 在此特殊具體實施例的第一步骤中,將陣列20外覆或包 膠以介電材料的低溫澱積之薄膜25。介電材料的低溫澱積 之薄膜之—典型實例是二氧化矽(Si02),它係經由在大概104 托(torr)之壓力下於—種含氧(〇2)之大氣令蒸發一氧化矽 (Si0)予以澱積。通常,膜25的厚度視所利用之LEDs的型式 和各活性層之厚度而定。然而,假設是製造標準LEDs,則 具有厚度在大概5〇〇至15〇〇埃(又)範圍内之一層通常是足 夠的厚而能實施所意欲之功能。因此膜25對於下列步驟提 供某些另外之保護。 然後將一金屬罐30或相似不可滲透之蓋(例如金屬箔,敷 金屬之聚合物膜例如敷金屬之聚g旨等)密封式接合在膜25上 之陣列20上。在一個較佳具体實施例中,將一個金屬圖案 (圖中未示)施加至環繞陣列20之薄膜25的上表面上,幷將 金屬罐30定位在金屬圖案上之陣列2〇上,同時該構造仍是 在薄膜澱積步驟的1〇4托眞空下。然後將金屬罐3〇利用低溫 焊料密封予以密封在陣列20上,在32處。爲了此項目的, 可使用之一種典型低溫烊料是以銦爲基材之焊料β在某些 特殊應用中’且如果使用具有充分低之溶化溫度之焊料, 則可能簡單地直接密封金屬罐30至基材23之表面上。爲了 本案之目的,應特別提及的是,可以邊得具有7〇»C至ι i/C 熔點之銦焊料。 如果需要或最好有另外之保護,可將吸氣劑材料的薄膜34 形成在金屬罐30的内部,舉例而言,成爲金屬罐3〇的襯 裡’或成爲在薄膜25的上表面上的一層材料a通常,利用 本紙張尺度適用中國國家標準(CNS〉Λ4规格(2】〇χ297公釐) I - - ^ϋ. - - 1 ! I - » I— I! μ li I I I -I -- I - J^aJI I I --1 -- -. I rl· - (請先閱讀背面之注意事項再填寫本寅) 經濟部中央標準局貝工消費合作社印裂 409422 A 7 B7 五、發明説明(5) 低功函數金屬例如敍(Li)或鍰(Mg)作爲吸氣材料來吸收金屬 罐30内所夹帶或駐留之氣體,或隨著密封後,可能漏入金 屬罐3〇中之少量氣體。 經由併用吸氣之膜34入金屬罐30中,能吸收少量之漏戌 氣体’以致在某些特殊應用方面,可能使用—種有機黏合 劑將金屬罐3〇密封在膜25上或薄膜之類上。通常,有機黏 合劑不需要昇高之溫度’且如果將金屬罐30適當配合至薄 膜25上,則有機黏合劑密封32之厚度是極小。 因此,基於應用及所需要之保護的數量,可將金屬罐3〇, 介電材料之薄膜25,吸氣之薄膜34及在密封32處之不同型 式的密封材料的各種組合容易且便利地併合入製造方法 中。亦需注意的是’薄膜25通常具有較陣列20爲低之滲透 性’而金屬罐30實質上是不滲透,以致整個構造與簡單地 使用一層之無機材料予以包膠之先前構造相較,乃具有較 佳之滲透抗性。亦’因爲薄膜25係在低溫下予以澱積及金 屬罐30在低溫下予以密封’所以陣列2〇不會受損、退化, 或在其他情況下經由包膠操作或經由成品之熱循環而受損 害。另外,本發明包括較先前技藝方法和裝置更可製造之 方法。 雖然余等已顯示并敘述本發明的特殊具體實施例,但是 對於精於該項技會之人士而言’可出現另外之變型和改 良。因此’余等須陳明本發明幷不受限於所顯示之特殊形 式’且余等意欲包括幷未遠離本發明之要旨和範圍之所有 變型在所附之申請專利範圍中。 -8 - 本紙張尺度適用中國國家榡皁(CNS ) Λ4蜒格(210X297公瘦1 ----------'—裝-- '· (請先閲讀背面之注意事項再填寫本頁> 訂

Claims (1)

  1. 經濟部中央標率局貝工消費合作社印製 第85102611號專利申請案 M 中文申請專利範圍修正本(沾年2月) _ _______D8六、申請專利範酺09422 1· 一種密封有機發光裝置之方法’其包括下列步驟 提供有機發光裝置在一個支持之基材上; 以一介電材料之薄膜外覆該有機發光裝置,該介電材料 之薄膜係以低於約300°C之溫度而沈積; 密封式接合一無機層在該介電材料上,以便實質上密封 該有機發光裝置。 ' 2‘一種如申請專利範圍第丨項之密封有機發光裴置之方 法,其中該密封接合該無機層於該介電材料的步驟包括 下列步驟: 提供一金屬罐; 密封該金屬罐在該介電材料薄膜上,以便實質上密封該 有機發光裝置,以及 使用一銲料密封和一有機接合劑之—^ 3. —種如申請專利範圍第丨項之密封有機裝置之方法,其 中該密封接合該無機層於該介電材料的步驟包括下列步 騾: 提供一金屬罐; 密封接合該金屬罐於該介電材料薄膜上,以便實質上密 封該有機發光裝置,以及 在密封接合該金屬罐之前沈積一層吸氣材料於該介電材 料薄膜上’以便實質上將該層吸氣材料定位於該金屬罐 内。 本紙張尺度逋用中國國家揉準(CNS ) A4規格(210X297公釐) (請先閲讀背面之注意事項再填寫本頁} 裝 —訂
    經濟部中央標率局貝工消費合作社印製 第85102611號專利申請案 M 中文申請專利範圍修正本(沾年2月) _ _______D8六、申請專利範酺09422 1· 一種密封有機發光裝置之方法’其包括下列步驟 提供有機發光裝置在一個支持之基材上; 以一介電材料之薄膜外覆該有機發光裝置,該介電材料 之薄膜係以低於約300°C之溫度而沈積; 密封式接合一無機層在該介電材料上,以便實質上密封 該有機發光裝置。 ' 2‘一種如申請專利範圍第丨項之密封有機發光裴置之方 法,其中該密封接合該無機層於該介電材料的步驟包括 下列步驟: 提供一金屬罐; 密封該金屬罐在該介電材料薄膜上,以便實質上密封該 有機發光裝置,以及 使用一銲料密封和一有機接合劑之—^ 3. —種如申請專利範圍第丨項之密封有機裝置之方法,其 中該密封接合該無機層於該介電材料的步驟包括下列步 騾: 提供一金屬罐; 密封接合該金屬罐於該介電材料薄膜上,以便實質上密 封該有機發光裝置,以及 在密封接合該金屬罐之前沈積一層吸氣材料於該介電材 料薄膜上’以便實質上將該層吸氣材料定位於該金屬罐 内。 本紙張尺度逋用中國國家揉準(CNS ) A4規格(210X297公釐) (請先閲讀背面之注意事項再填寫本頁} 裝 —訂
TW085102611A 1995-05-02 1996-03-04 Method for passivating organic semiconductor devices TW409422B (en)

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US08/433,909 US5771562A (en) 1995-05-02 1995-05-02 Passivation of organic devices

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US (1) US5771562A (zh)
EP (1) EP0741419B1 (zh)
JP (1) JPH08306955A (zh)
KR (1) KR100372967B1 (zh)
CN (1) CN1092396C (zh)
DE (1) DE69630162T2 (zh)
TW (1) TW409422B (zh)

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JP2813499B2 (ja) * 1991-09-30 1998-10-22 出光興産株式会社 有機el素子

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KR100372967B1 (ko) 2003-05-12
EP0741419A2 (en) 1996-11-06
DE69630162D1 (de) 2003-11-06
DE69630162T2 (de) 2004-06-09
US5771562A (en) 1998-06-30
CN1139293A (zh) 1997-01-01
KR960043022A (ko) 1996-12-21
EP0741419A3 (en) 1997-09-03
EP0741419B1 (en) 2003-10-01
JPH08306955A (ja) 1996-11-22
CN1092396C (zh) 2002-10-09

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