TW402743B - Method for producing metallic polycide gate with amorphous silicon cap layer - Google Patents

Method for producing metallic polycide gate with amorphous silicon cap layer Download PDF

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Publication number
TW402743B
TW402743B TW088102052A TW88102052A TW402743B TW 402743 B TW402743 B TW 402743B TW 088102052 A TW088102052 A TW 088102052A TW 88102052 A TW88102052 A TW 88102052A TW 402743 B TW402743 B TW 402743B
Authority
TW
Taiwan
Prior art keywords
layer
silicon
tungsten
polycrystalline silicon
amorphous silicon
Prior art date
Application number
TW088102052A
Other languages
English (en)
Chinese (zh)
Inventor
Chiao-Lin Ho
Jia-Shuen Shiao
Original Assignee
Promos Techvologies Inc
Mosel Vitelic Inc
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Promos Techvologies Inc, Mosel Vitelic Inc, Siemens Ag filed Critical Promos Techvologies Inc
Priority to TW088102052A priority Critical patent/TW402743B/zh
Priority to JP15204499A priority patent/JP3274659B2/ja
Application granted granted Critical
Publication of TW402743B publication Critical patent/TW402743B/zh

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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/10—Energy storage using batteries

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
TW088102052A 1999-02-10 1999-02-10 Method for producing metallic polycide gate with amorphous silicon cap layer TW402743B (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
TW088102052A TW402743B (en) 1999-02-10 1999-02-10 Method for producing metallic polycide gate with amorphous silicon cap layer
JP15204499A JP3274659B2 (ja) 1999-02-10 1999-05-31 非晶質シリコンよりなるキャップ層を有したポリサイドゲートの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW088102052A TW402743B (en) 1999-02-10 1999-02-10 Method for producing metallic polycide gate with amorphous silicon cap layer

Publications (1)

Publication Number Publication Date
TW402743B true TW402743B (en) 2000-08-21

Family

ID=21639665

Family Applications (1)

Application Number Title Priority Date Filing Date
TW088102052A TW402743B (en) 1999-02-10 1999-02-10 Method for producing metallic polycide gate with amorphous silicon cap layer

Country Status (2)

Country Link
JP (1) JP3274659B2 (ja)
TW (1) TW402743B (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6841824B2 (en) * 2002-09-04 2005-01-11 Infineon Technologies Ag Flash memory cell and the method of making separate sidewall oxidation

Also Published As

Publication number Publication date
JP3274659B2 (ja) 2002-04-15
JP2000236093A (ja) 2000-08-29

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