TW401606B - Shield or ring surrounding semiconductor workpiece in plasma chamber - Google Patents

Shield or ring surrounding semiconductor workpiece in plasma chamber Download PDF

Info

Publication number
TW401606B
TW401606B TW087114500A TW87114500A TW401606B TW 401606 B TW401606 B TW 401606B TW 087114500 A TW087114500 A TW 087114500A TW 87114500 A TW87114500 A TW 87114500A TW 401606 B TW401606 B TW 401606B
Authority
TW
Taiwan
Prior art keywords
workpiece
dielectric
reaction chamber
anode
plasma
Prior art date
Application number
TW087114500A
Other languages
English (en)
Chinese (zh)
Inventor
Kuang-Han Ke
Bryan Y Pu
Hong-Ching Shan
James Wang
Henry Fong
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Application granted granted Critical
Publication of TW401606B publication Critical patent/TW401606B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7611—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32633—Baffles

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
TW087114500A 1997-09-16 1998-09-01 Shield or ring surrounding semiconductor workpiece in plasma chamber TW401606B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US93186497A 1997-09-16 1997-09-16

Publications (1)

Publication Number Publication Date
TW401606B true TW401606B (en) 2000-08-11

Family

ID=25461470

Family Applications (1)

Application Number Title Priority Date Filing Date
TW087114500A TW401606B (en) 1997-09-16 1998-09-01 Shield or ring surrounding semiconductor workpiece in plasma chamber

Country Status (3)

Country Link
JP (1) JP4602545B2 (https=)
TW (1) TW401606B (https=)
WO (1) WO1999014788A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105551925A (zh) * 2015-12-08 2016-05-04 武汉华星光电技术有限公司 干刻蚀装置

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6257168B1 (en) * 1999-06-30 2001-07-10 Lam Research Corporation Elevated stationary uniformity ring design
US6344105B1 (en) * 1999-06-30 2002-02-05 Lam Research Corporation Techniques for improving etch rate uniformity
US6363882B1 (en) 1999-12-30 2002-04-02 Lam Research Corporation Lower electrode design for higher uniformity
US6489249B1 (en) * 2000-06-20 2002-12-03 Infineon Technologies Ag Elimination/reduction of black silicon in DT etch
JP2002222795A (ja) * 2001-01-26 2002-08-09 Anelva Corp ドライエッチング装置
JP4676074B2 (ja) * 2001-02-15 2011-04-27 東京エレクトロン株式会社 フォーカスリング及びプラズマ処理装置
US6554954B2 (en) * 2001-04-03 2003-04-29 Applied Materials Inc. Conductive collar surrounding semiconductor workpiece in plasma chamber
TWI246873B (en) * 2001-07-10 2006-01-01 Tokyo Electron Ltd Plasma processing device
DE10143718A1 (de) * 2001-08-31 2003-03-27 Infineon Technologies Ag Lagerungsvorrichtung für einen Wafer in einer Plasmaätzanlage
US6887340B2 (en) * 2001-11-13 2005-05-03 Lam Research Corporation Etch rate uniformity
US7658816B2 (en) 2003-09-05 2010-02-09 Tokyo Electron Limited Focus ring and plasma processing apparatus
TWI488236B (zh) * 2003-09-05 2015-06-11 東京威力科創股份有限公司 Focusing ring and plasma processing device
US7837825B2 (en) 2005-06-13 2010-11-23 Lam Research Corporation Confined plasma with adjustable electrode area ratio
US8617672B2 (en) 2005-07-13 2013-12-31 Applied Materials, Inc. Localized surface annealing of components for substrate processing chambers
US7358508B2 (en) * 2005-11-10 2008-04-15 Axcelis Technologies, Inc. Ion implanter with contaminant collecting surface
US8435379B2 (en) * 2007-05-08 2013-05-07 Applied Materials, Inc. Substrate cleaning chamber and cleaning and conditioning methods
US7942969B2 (en) 2007-05-30 2011-05-17 Applied Materials, Inc. Substrate cleaning chamber and components
US20150001180A1 (en) * 2013-06-28 2015-01-01 Applied Materials, Inc. Process kit for edge critical dimension uniformity control
JP7098273B2 (ja) * 2016-03-04 2022-07-11 アプライド マテリアルズ インコーポレイテッド ユニバーサルプロセスキット
JP7278160B2 (ja) * 2019-07-01 2023-05-19 東京エレクトロン株式会社 エッチング方法及びプラズマ処理装置
JP7365912B2 (ja) * 2020-01-10 2023-10-20 東京エレクトロン株式会社 エッジリング及び基板処理装置
CN121726305B (zh) * 2026-02-13 2026-04-21 上海邦芯半导体科技有限公司 一种反应腔体及等离子体处理设备

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04333228A (ja) * 1991-05-09 1992-11-20 Mitsubishi Electric Corp ドライエッチング装置
KR100297358B1 (ko) * 1991-07-23 2001-11-30 히가시 데쓰로 플라즈마에칭장치
JPH0529270A (ja) * 1991-07-23 1993-02-05 Tokyo Electron Ltd マグネトロンプラズマ処理装置
JP3260168B2 (ja) * 1991-07-23 2002-02-25 東京エレクトロン株式会社 プラズマ処理装置
US5529657A (en) * 1993-10-04 1996-06-25 Tokyo Electron Limited Plasma processing apparatus
JP3173693B2 (ja) * 1993-10-04 2001-06-04 東京エレクトロン株式会社 プラズマ処理装置及びその方法
US5573596A (en) * 1994-01-28 1996-11-12 Applied Materials, Inc. Arc suppression in a plasma processing system
JP3210207B2 (ja) * 1994-04-20 2001-09-17 東京エレクトロン株式会社 プラズマ処理装置
JPH08339895A (ja) * 1995-06-12 1996-12-24 Tokyo Electron Ltd プラズマ処理装置
JPH09129612A (ja) * 1995-10-26 1997-05-16 Tokyo Electron Ltd エッチングガス及びエッチング方法
US6113731A (en) * 1997-01-02 2000-09-05 Applied Materials, Inc. Magnetically-enhanced plasma chamber with non-uniform magnetic field

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105551925A (zh) * 2015-12-08 2016-05-04 武汉华星光电技术有限公司 干刻蚀装置

Also Published As

Publication number Publication date
JP2001516948A (ja) 2001-10-02
WO1999014788A1 (en) 1999-03-25
JP4602545B2 (ja) 2010-12-22

Similar Documents

Publication Publication Date Title
TW401606B (en) Shield or ring surrounding semiconductor workpiece in plasma chamber
TW472289B (en) Diamond coated parts in a plasma reactor
US6284093B1 (en) Shield or ring surrounding semiconductor workpiece in plasma chamber
KR100305508B1 (ko) 수소라디칼을포함하는반응성이온에칭방법
TW308717B (https=)
JP3969795B2 (ja) チャンバ洗浄中に枯らし時間とバイアスｒｆ電力とを変化させて移動性イオン及び金属による汚染を低減する方法
EP1378000B1 (en) Conductive collar surrounding semiconductor workpiece in plasma chamber
TW418423B (en) Chamber having improved process monitoring window
TW487988B (en) Method of cleaning and conditioning plasma reaction chamber
US8287650B2 (en) Low sloped edge ring for plasma processing chamber
JP4610191B2 (ja) プラズマを生成するための手順および装置
US20140103805A1 (en) Plasma confinement apparatus, and method for confining a plasma
US20170256435A1 (en) Universal process kit
TW200930829A (en) Support assembly
US5484485A (en) Plasma reactor with magnet for protecting an electrostatic chuck from the plasma
JPS61179872A (ja) マグネトロンエンハンスプラズマ補助式化学蒸着のための装置ならびに方法
TW486733B (en) Dry etching method and manufacturing method of semiconductor device for realizing high selective etching
TW201216362A (en) Etching method and apparatus
US6531030B1 (en) Inductively coupled plasma etching apparatus
JP4193255B2 (ja) プラズマ処理装置及びプラズマ処理方法
TWI393210B (zh) 等離子反應器之靜電夾頭裝置
WO1995022171A2 (en) Stripping, passivation and corrosion inhibition of semiconductor substrates
JPH05144770A (ja) 同軸型プラズマ処理装置
TW394991B (en) Process for forming contact holes in a semiconductor structure
EP1016116A2 (en) Apparatus for improving etch uniformity and methods therefor

Legal Events

Date Code Title Description
GD4A Issue of patent certificate for granted invention patent