TW388945B - Filp-chip connecting method, filp-chip connected structure and electronic device using the same - Google Patents

Filp-chip connecting method, filp-chip connected structure and electronic device using the same Download PDF

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Publication number
TW388945B
TW388945B TW087111695A TW87111695A TW388945B TW 388945 B TW388945 B TW 388945B TW 087111695 A TW087111695 A TW 087111695A TW 87111695 A TW87111695 A TW 87111695A TW 388945 B TW388945 B TW 388945B
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TW
Taiwan
Prior art keywords
electrode
connection structure
flip
item
patent application
Prior art date
Application number
TW087111695A
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English (en)
Inventor
Naoya Isada
Toyoki Asada
Yoshio Ozeki
Yasuo Amano
Kunio Matsumoto
Original Assignee
Hitachi Ltd
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Publication of TW388945B publication Critical patent/TW388945B/zh

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Description

A7 B7 五、發明説明（1 )
發明背景 I 發明領域 本發明相關於半導體積體電路（I C )晶片面朝下地 直接安裝在電路基體上以達成電連接的結構/方法，以及 使用此結構/方法的電子裝置。更明確地說，本發明相關 於甩來提供基體（例如印刷電路板）與倒裝晶片I C之間 的連接的獨特及新穎的電連接結構/方法。 相關技術的敘述 雖然軟焊料經常用電子裝置的組裝，但是在I C封裝 尺寸減小之下，I C封裝上的連接端子量增加。結果， IC封裝的端子的節距或間隙已減小至軟焊技術無法對精 細電極精確地提供軟焊的程度（例如1 3 0 (微米） )，使得藉著軟焊的組裝變得非常困難且/或就產品良率 而言不可靠》 因此，已開發出將半導體1C直接安裝在基體上的另 一種連接技術。更明確地說，已證明將半導體I C以其主 動側面朝下地安裝在基體上的倒裝晶片安裝方法爲增進電 特性及安裝密度的有效結構/方法》例如，日本專利^告 第He i 6 — 6 6 3 5 5號揭示凸出電極形成在半導體 1 C晶片的端子電極上且導電黏著劑被置於接觸點與基體 上的電極之間的方法。另外，日本專利公告第He i 8 — 2 5 7 4 3 6 9號揭示藉著充塡在倒裝晶片連接結構的半 導體I C晶片與電路基體之間的樹脂的硬化及收縮而加強 導電粒子之間的導電性的方法。 ·- ^Γ· .^1 L— . t婧先背面之注項再填寫本頁) -裝-
•1T -線 經濟部中央標隼局貝工消费合作社印^ 本紙張尺度適/Π中國國家標绛（C'NS ) Λ4現格（210X297公羞） 4- 經濟部中央標準局員工消費合作社印製 A7 B7_ 五、發明説明（2 ) 但是，上述的使用導電粒子的電連接所具有的嚴重問 題爲半導體IC裝置的凸出電極與有機電路基體之間的電 連接電阻W變化。因此，每一連接點的可靠程度也有變化 ，因而此種結構不適用於數目增多的端子及/或許多應用 〇 連接電阻的變化被認爲有一部份是由於半導體IC裝 置所具有的凸出電極的高度的變化所造成，亦即由於有變 化的高度，凸出電極對基體的電極具有有變化的接觸壓力 。如此，即使導電糊被置於凸出電極與基體電極之間，也 不能獲得充分的連接可靠性。因此，爲抑制連接電阻的變 化，抑制或補償凸出電極的高度變化很重要。此在未設置 導電糊時也相同。 至於抑制凸出電極的高度變化的方法，有在半導體 I C裝置安裝在基體上時施加壓力以使凸出電極，基體， 及/或基體電極變形的方法，如此嘗試使任何變化由變形 來吸收或補償，例如日本未審査專利申請案第H e i 8 — 111437號（下文稱爲>437號案）中所揭示。但 是，爲以上述方式變形，需要5 0 g/p i η (克脚 )的壓力，使得當設置的插腳越多時，所需的整體壓力越 大。如此，半導體I C裝置及電路基體受損的可能性增加 。例如，當安裝具有2 0 0支插腳的半導體I C裝置時， 需要50x200g = 10kg (公斤）的壓力。現有的 產品無法可靠地承受此壓力，因此從’4 3 7號案所得的結 果傾向於不使用壓力。對於相當易於變形的例如使用·線凸 本紙張尺度適用中國國家標準（CNS )Λ4規格（210X297公嫠） ---------¢------1T------Φ 1{請先閲讀背面之注意Ϋ項再填寫本頁) -5 - 經濟部中央標準局貞工消费合作社印製 A7 B7 五、發明説明（3 ) 塊（wire bump V結構的產品也是如此。 以下也爲相關的背景資料，包括日本專利公告第 He i 7^5 0726號，日本未審査專利申請案第 He i9 — 107003 號，Yusuke Wada 在 1 9 9 5 年的 I CEMCM第 5 9 至 6 4 頁的「A New Circuit Substrate For MCM-L」，T. Kusagaya等人在 1 9 9 3 年的 I CEMM 年報第 238 至 246 頁的「Flip Chip Mounting Using Stud Bumps And Adhesives For Encapsulation 」，Y. Tomura·等人在 1 9 9 3 年 4 月的 National Technical Report Vol. 39，No· 2第 9 0 至 9 7 頁的「Chip-On-Board Mounting Technology Using Stud-Bump-Bonding Technique」 ，Y. Nakamura 等人在 1 9 9 5 年的 I CEMCM 第 302 至 3 0 7 頁的「Advanced LSI Package Using Stud-Bump-Bonding Technology <CSP(Chip Size Package)〉」 ，K. Matsuda 等人在 1 9 9 7 年的 International Conference On Multichip Modules第 9 2 至 9 7 頁的「Simple Method For Flip-Chip Bonding On A Resin Substrate」，K. Tanaka 等人在 1 9 9 6 年 I CEMCM 年報第 3 6 9 至 374 頁的「A Fine-Pitch Lead-Less-Chip Assembly Technology With The Built-Up PCB 」，J.G. Aday等人在1996年ICEMCM年報第239 至 244 頁的「A Comparative Analysis Of High Density PWB Technologies」。 發明槪說 - 本紙張尺度通用中國國家標率（CNS ) Λ4規格（210X297公藿） ---------¢------ir------^ (請先閲讀背面之注意事項再填寫本頁) -6- A7 B7 五、發明説明（4 ) 本發明的目的爲解決習知技術的問題，亦即提供具有 用來吸收或補償凸出電極的高度的任何變化的獨特及新穎 的結構的倒裝晶片連接結構/方法，以及提供使用此結構 /方法的電子裝置。 本發明之上述目的之達成是經由一種倒裝晶片連接結 構，包含半導體稹體電路（I C )裝置，具有第一電極； 電路基體，具有相應於第一電極的第二電極；及導電糊， 設置在第一電極的至少一部份與第二電極的至少一部份之 間以及相鄰於第一及第二電極設置，導電糊內具有用來增 進第一電極與第二電極之間的電連接的導電粒子，其中在 設置在第一電極與第二電極之間的導電糊內的導電粒子的 密度大於在相鄰於第一及第二電極設置的導電糊內的導電 粒子的密度。 . 經滴部中次梯準局貝工消费合作社印裝 _(請先聞讀背面之注意Ϋ項再填寫本頁) 本發明之上述目的之達成是另外經由一種倒裝晶片連 接結構，包含半導雔積體電路（I C)裝置，具有第一電 極；電路基體，具有相應於第一電極的第二電極；及導電 糊，在第一電極的至少一部份與第二電極的至少一部份上 ，且其內具有用來增進第一電極與第二電極之間的電連接 的導電粒子，其中導電糊在直接設置在第一電極與第二電 極之間的區域所具有的導電粒子密度比在第一電極及第二 電極的其他部份所具有的導電粒子密度高。 本發明之上述目的之達成也藉著用來將具有凸出電極 的半導體IC裝置安裝在具有絕緣層及電極的電路基體上 的倒裝晶片連接方法，此方法包含藉著加熱軟化絕緣·層且 本紙張尺度適用中國围家標淨·（ CNS ) Λ4規格（210X297公釐） 經滴部中央標隼扃貝工消費合作社印$!. A7 B7_ 五、發明説明（5 ) 藉著加壓使電極及軟化的絕緣層變形的步驟。 另外，本發明之上述目的之達成是藉著用來將具有凸 出電極的平導體IC裝置經由具有導電粒子及熱塑性樹脂 的導電糊而安裝在電路基體上的倒裝晶片連接方法，此方 法包含藉著加熱軟化導電糊且藉著加壓使軟化的導電糊所 具有的熱塑性樹脂繞凸出電極移動的步驟》 另外，本發明之上述目的之達成是藉著用來將具有凸 出電極的半導體IC裝置經由具有導電粒子及熱塑性樹脂 的導電糊而安裝在具有絕緣層及電極的電路基體上的倒裝 晶片連接方法，此方法包含的步驟爲藉著加熱軟化導電層 及導電糊，藉著加壓使電極及軟化的導電層變形，以及藉 著加壓使軟化的導電糊所具有的熱塑性樹脂繞凸出電極移 動' - 藉著加熱，電路基體所具有的絕緣層軟化，而藉著加 壓，絕緣層及電極變形，因而吸收或適應凸出電極的髙度 的任何變化，並且因而抑制連接電阻的變化。 另外，藉著加熱，導電糊中的熱塑性樹脂軟化，而藉 著加壓，軟化的熱塑性樹脂藉著被擠出而繞凸塊移動。如 此，在設置在基體上的每一電極與凸塊之間的導電糊中， 導電粒子以髙密度存在，使得導電粒子濃密存在的部份可 補償半導體I C裝置所具有的凸出電極的高度變化。因此 ，相應於凸出電極的高度，可調整導電粒子濃密存在的部 份的高度。更具體地說，此揭示中所用的術語「濃密存在 」.指的是每單位體稹的導電糊中存在的導電粒子數目·，並 本紙張尺度適用中國國家標埤（CNS ) Λ4現格（210X297公釐） ---------装------1T—-----0 ·(请先Μ讀背面之注意事項再填寫本頁) -8 - A7 ______B7 五、發明説明（6 ) 且其指示設置在凸塊與基髏上的電極之間的導電糊（具有 高導電粒子密度）與凸塊周圍存在的導電糊（具有較低的 導電粒子密度）比較的狀態。 藉著形成導電粒子濃密存在在每一凸出電極與基體電 極之間的部份，可減小電連接電阻。 另外，在未被捕捉在每一凸出電極與基體上的接線之 間而被轉移靠近凸出電極的末端的導電糊中，藉著具有相 當低密度的導電粒子的部份來造成應力鬆弛，因而可達成 高度可靠的連接。 當電路基體的電極由於如上所述的加壓而變形時，有 可能產生斷開的問題。因此，最好選擇性地組合電路基體 的變形與安裝時形成在導電糊中的導電粒子濃密存在的部 份。 ' 經濟部中央標準局貝工消资合作社印^ -{請先閲讀背面之注意Ϋ項再填寫本 在任何情況中，藉著組合加熱與安裝時的加壓，可藉 著較小的壓力（與不使用本發明相比）來抑制凸出電極高 度的分散。另外，本發明具多種用途，因爲不論加熱與加 壓同時或獨立執行均不會有問題。亦即，只要在絕緣樹脂 及/或熱塑性樹脂由於加熱而軟化之下施加壓力即不會有 問題。 從以下形成本發明的此揭示的一部份的連同圖式的較 \ 佳實施例的詳細敘述及申請專利範圍可使本發明的上述及 其他目的，優點，操作方式，新穎特徵，以及較佳的瞭解 更顯明。雖然以上及以下所述及所示的揭示集中於揭示本 發明的較佳實施例，但是必須瞭解其只是說明及舉例用而 本紙張尺度適用中國围家標埤（CNS ) Λ4規格（210X297公釐） -9- 經濟部中次榡準扃負工消费合作社印繁 A7 B7五、發明説明（7 ) 非加以限制，本發明的精神及範圔只受申請專利範圍的用 語的限制。 圖式的簡要敘述 圖1A至1C爲根搛本發明的實施例的連接結構的剖 面圖。 圖2爲顯示根據本發明的實施例的安裝方法的流程圖 〇 圖3包含顯示本發明的結構/方法中凸塊形成階段的 剖面及平面圖。 圖4包含顯示本發明的結構/方法中導電糊塗覆階段 的剖面圖。 圖5及6爲顯示本發明的結構/方法中充塡樹脂施加 階段的剖面圖》 圖7爲顯示本發明的結構/方法中加熱及加壓階段的 剖面圖。 圖8爲在完成圖2的安裝方法後的最終連接結構的剖 面圖。 圖9 A爲圖6的充塡樹脂施加階段的二凸塊/電極區 域的放大剖面圖。 圖9 B爲接近圖7的加熱及加壓階段的開始的二凸塊 /電極區域的放大剖面圖。 圖9 C爲接近圖7的加熱及加壓階段的結束及/或圖 8的最終連接結構的二凸塊/電極區域的放大剖面圖-。 請 先 閱 讀 背 面 之 注 項 再 旁 裝 訂 線 本紙張尺度適用中國围家標率（C’NS ) Λ4規格（210X297公羞） -10- 經濟部中央標準局貝工消费合作社印製 A7 B7 五、發明説明（8 ) 圖10爲顯示本發明與不利的方式之間的比較的照片 主要元件對照表 1 半導體I C裝置 2 凸出電極（凸塊） 3 導電糊 4 導電粒子 5 熱塑性樹脂 6 電路基體 7 電極 7 D 電極 8 絕緣樹脂（層） 8 D 絕緣樹脂（層） 9 充塡樹脂 ---------择------1T------.^ (請先聞讀背面之注意事項再填寫本頁) 1 0 區域 3 2 凸塊形成 階 段 3 4 凸塊形成 階 段 3 6 凸塊形成 階 段 3 8 凸塊形成 階 段 4 0 乳狀隆起物 4 2 托盤 5 0 凸塊形成 階 段 本紙張尺度通用中國國家標率（rNS ) Λ4規格（210 X 297公釐） -11 - A7 ___B7_ 五、發明説明（9 ) 本發明的較佳實施例的詳細敘述 相同的參考數字及字元在適當時被用來在不同的圖中 指示相同 >相應，或類似的組件。另外，在以下的詳細敘 述中，以括號表示舉例的尺寸/値/範圍，但是本發明不 受限於此》 以下參考圖式敘述本發明。更具體地說，圖1 A至 1C顯示完成將倒裝晶片裝載在基體（例如有機基體）上 之後的本發明的倒裝晶片連接結構的剖面（於不同的放大 率）。在圖ΓΑ至1C中，參考數字1表示半導體1C裝 置，數字2表示設置（例如以1 3 Ο μιη的節距）在半導 體IC裝置的電極上的凸出電極（凸塊），數字3表示設 置在各凸塊2上的導電糊，數字4表示導電糊3中所含的 導電粒子，數字5表示導電糊3中所含的熱塑性樹脂，數 字6表示電路基體，數字7表示設置成電路基體6的一部 份的電極，數字8表示基體所具有的絕緣樹脂，而數字9 表示具有預定的硬化收縮力的下方充塡樹脂。 經濟部中央標準局負Η消费合作社印製 ·(請先閲讀背面之注意事項再填寫本頁) 充塡樹脂9最好爲具有環氧丙烯酸酯，酚環氧，或氰 基丙烯酸成爲主要組份的材料。特別是在電路基體6是由 有機物質形成時，環氧丙烯酸酯或酚環氧較佳。另外，充 塡樹脂9的玻璃化溫度最好比半導體I C裝置1的常態操 作溫度髙，使得充塡樹脂9不會在半導體I C裝置1的正 常操作期間軟化。熱塑性樹脂5及絕緣樹脂8最好爲在充 塡樹脂9的硬化溫度軟化的材料。 凸出電極（凸塊）2最好爲金凸塊，銀凸塊，銀錫 本紙張尺度適用中國國家標準（CNS ) Λ4規格（210X297公釐） -12- 經濟部中央標準局負-Χ消费合作社印^ A7 _： _B7 五、發明説明（10 ) 合金凸塊，或類似者·導電糊3最好爲具有金粉末的熱塑 性樹脂（金粉末最好具有小片的形狀，平均粒子尺寸最好 在厚度爲1.至2 且直徑爲2至1 0 的範圍內，且 以在9 2至9 7wt% (重量百分比）的範圍內的濃度包 含在樹脂內），具有銀粉末的熱塑性樹脂（銀粉末最好具 有小片的形狀，平均粒子尺寸最好在厚度爲1至2 且 直徑爲2至1 0 # m的範圍內，且以在8 6至9 4w t % (重量百分比）的範圍內的濃度包含在樹脂內），或是由 銀鉑合金粉末所組成的材料（銀鉑合金粉末最好具有小片 的形狀，平均粒子尺寸最好在厚度爲1至2 且直徑爲 2至1 0//m的範圍內，且以在8 7至9 5wt% (重量 百分比）的範圍內的濃度包含在樹脂內）^ 以下參考圖2至9敘述用來將具有凸出凸塊2的半導 體I C裝置1安裝在基體電極7上的結構/方法。更具體 地說，凸出凸塊2是根據引線凸塊方法或類似者而產生在 半導體1C裝置1的電極上（圖2的步驟1，見圖3)。 更具體地說，圖3包含顯示本發明的結構/方法中凸塊形 成階段的剖面圖及平面圖。 '' 在圖3中，參考數字3 2表示首先工具接近半導體 I C裝置1的凸塊形成階段，而參考數字3 4表示凸塊材 料被施加（例如經由加熱/熔化）在半導體I C裝置1的 表面以形成凸塊的主要部份的凸塊形成階段。其次，參考 數字3 6及3 8表示在工具移離半導體I C裝置1之下中 斷加熱以形成尖頭乳狀隆起物4 0的凸塊形成階段。·最後 本紙張尺度適用中國國家標率（CNS ) Λ4現格（2丨0X297公釐） ---------装------1T------^ ·<請先Μ讀背面之注意事項再填寫本页) -13- 經濟部中夾標準局另工消費合作社印繁 A7 _B7 五、發明説明（H) ，參考數字5 0表示另一工具被壓抵於尖頭乳狀隆起物 4 0且/或被加熱以使尖頭乳狀隆起物4 0變平坦而形成 凸塊的一小部份的凸塊形成階段。一旦在半導體1C裝置 1的所有適當位置處形成凸塊（凸出5 0 ;/m)，半導體 1C裝置1顛倒（見圖3中間的圖所示），使得所形成的 凸塊可被壓抵於具有用來與凸塊相應對接的電極（例如襯 墊及/或導電線）的基體。圖3中從底部算起的第二圖表 示裝有凸塊且顛倒的半導體I C裝置1的剖面圓，而圖3 底部的圖表示沿著半導體IC裝置1的周邊的凸塊圖型的 例子（具有1 3 0 /zm的凸塊節距）的平面圖。 其次，圖4包含顯示本發明的結構/方法中的導電糊 塗覆階段的剖面圖。由導電粒子4及熱塑性樹脂5構成的 導電糊3塗覆在托盤4 2上，成爲具有指定厚度的層L ( 圖4頂部的圖），且經由將凸出凸塊2的末端沒入及/或 壓入至層L內（見圖4中間的圖）而轉移導電糊3 (圖2 的步驟2)。可將導電糊層及/或凸出凸塊2加熱以便導 電糊層更容易轉移至凸塊2上。然後，將半導體I C裝置 1移離托盤4 2。結果，導電糊層L的一部份轉移且&持 塗覆（例如2 0至4 0 //m)在每一凸塊2上，成爲導電 糊部份3(圖4下方的圖 圖5及6爲顯示本發明的結構/方法中充塡樹脂施加 階段的剖面圖。更具體地說，電路基體6上要安裝半導體 1C裝置1的部份接收需要量的充塡樹脂9 (圖2的步驟 3,見圖5)。然後，半導體1C裝置1安裝成使得·想要 本紙悵尺度適元中國國家標嘩（（，NS ) A4規格（210X297公藶) ~ -14 - ---------^------1T------.^ I：請先S·讀背面之注意事項再填寫本頁) 經满部中央標準局βη消費合作社印繁 A7 B7 五、發明説明（12 ) 的凸出凸塊2的位置與電路基體6的電極7的位置對準， 並且被推向塗覆有充塡樹脂9的電路基體6(圖2的步驟 4,見圖6)。圖9A爲圖6的二凸塊/電極區域的放大 剖面圖，且顯示充塡樹脂9仍然存在在凸塊/電極對之間 。圖9A另外顯示導電糊部份3於其整個部份仍然具有大 致相等的導電粒子分佈。另外，電極7及絕緣樹脂8仍然 互相分開。 圖7爲顯示本發明的結構/方法中的加熱及加壓階段 的剖面圖》更具體地說，在施加壓力P(例如爲30克/ 凸塊X 2 0 0凸塊=6公斤）以將電路基體6向半導體 I C裝置1偏壓下，基體6及半導體I C裝置1的至少之 —被加熱至超過充塡樹脂9的熔化/軟化溫度的溫度•維 持此加壓/加熱直到充塡樹脂9中產生充分的黏著力（圖 2的步驟5，見圖4) »例如，含有環氧丙烯酸酯成爲主 要組份的樹脂如果被加熱至1 8 0 °C 3 0秒鐘，則會充分 地熔化/軟化，使得不會有任何空洞產生在樹脂中。圖 9 B爲圖7的階段的二凸塊/電極區域的放大剖面画，且 顯示充塡樹脂9被擠出凸塊/電極對之間。此很重要，'因 爲如此一來電絕緣的充塡樹脂9便不會妨礙凸塊/電極對 之間的導電（亦即不會成爲污染物）。 圖9 B另外顯示導電糊部份3開始在其整個部份具有 不相等的導電粒子分佈。更具體地說，當導電凸塊2的小 部份接近電極7時，充塡樹脂內的較大導電粒子4被擠在 凸塊/電極對之間，且/或比較小的（亦即較液態熔·化/ 本紙張尺度適用中國S家標峰（（’NS ) Λ4規格（210X297公嫠） ---------餐------,1T------0 一{請先閣讀背面之注意事項再填寫本頁) -15- 經濟部中泱棉準局K3C.T消於合竹.ii印絮 A7 _ B7_ 五、發明説明（13 ) 軟化的）熱塑性樹脂粒子移動得慢。因此，較小的熱塑性 樹脂粒子被擠而移動至在電極7與凸塊2的主要部份之間 的環繞凸塊的小部份（亦即乳狀隆起物）的周邊區域。其 結果爲在就夾在或擠在電極7與凸塊2的小部份（亦即乳 狀隆起物）之間的區域D中有較高的導電粒子密度（見圖 1C)，而在其他蓝域L(亦即未夾住或未携住的區域） 由於被擠至該處的樹脂粒子的稀釋而具有較低的導電粒子 密度。 此非常有利，因爲髙濃度的導電粒子層增進凸塊/電 極對之間的導電，同時減小凸塊/電極對的接觸電阻。在 本發明中，熱塑性樹脂5，導電粒子4，加熱，加壓，與 時間參數的組合應選擇成導致小於3 0毫歐姆（πιΩ)的 接觸電阻，而選擇成導致小於1 ΟπιΩ的接觸電阻更好。 更具體地舉例而言，如果導電糊3爲具有銀鉑合金粉末的 熱塑性樹脂（銀鉑合金粉末具有小片的形狀，平均粒子尺 寸大約爲厚度爲1 //m且直徑爲2至1 0 ，且以9 0 wt%(重量百分比）的原始濃度包含在樹脂內），則於 1 5 0°C加熱且以2 0克/凸塊加壓1 0秒鐘會導致ίΕ就 夾在或擠在電極7與凸塊2的小部份（亦即乳狀隆起物） 之間的區域D中有大於9 7w t %的高密度導電粒子濃度 ，而在其他區域（亦即未夾住或未擠住的區域）中有8 9 至9 〇w t %的較低密度的導電粒子濃度，並且會導致大 約4 0 πι Ω的接觸電阻。 本發明中的加壓很重要，因爲此加壓傾向於改善·凸塊 本紙張尺度適用中國S家標埤（（'NS ) Λ4規格（210X297公釐） ---------装-----—.η------0 -(請先聞讀背面之注意事項再填寫本頁) -16- 經潢部中决標準局妇Μ消资合作社印？农 A7 B7 五、發明说明（14 ) /電極對之間的接觸電阻（降低）及導電性（提高）。亦 即，如果未加壓以將大量（即使不是大約全部）的熱塑性 樹脂5從就夾在及擠在電極7與凸塊2的小部份（乳狀隆 起物）之間的區域D擠出，則此種非導電性的熱塑性樹脂 會作用成爲降低凸塊/電極對之間的導電性且提高其間的 電阻的污染物。已證明熱塑性樹脂5，導電粒子4，加熱 ，與時間參數的一種組合在未加壓下導致大約4 ΟπιΩ的 接觸電阻，而加壓的組合導致大幅改善的小於1 ΟπιΩ的 接觸電阻。 在加熱/加壓的早期階段（見圖9 Β)，電極7及絕 緣層（樹脂）8未變形。於加熱/加屋的後期階段（見圔 9 C )，凸塊2，電極7 (例如18#m厚），及/或絕 緣層8可能會變形，因爲在壓力繼續施加之下，這些組件 之間的自由空間用盡而容許組件之間的干涉。更具體地說 ，圖9 C中左側的凸塊/電極對顯示出電極7 D及絕緣層 部份8 D已變形。 以下討論變形及濃密導電粒子層的優點/重要性。更 具體地說，當凸塊2形成在半導體I C裝置1上時，&於 製造上的限制，凸塊從半導體I C裝置1的表面測量起的 延伸距離不一致，亦即有非平面狀的偏差或變化，例如 ±7/zm。類似地，當電極7形成在基體6上時，由於製 造上的限制，電極從基體6的表面測量起的延伸距離不一 致，也有非平面狀的偏差或變化，例如±7 //m。圖9A 至9 C顯示左側電極7具有高於右側電極的髙度的情.況。 本紙張尺度適用中國囤家標绛（（’NS ) Λ4規格（210Χ297公着） 裝 I ~~訂H ^1 線 _(請先閲讀背面之注意事項再填寫本頁) -17- 經淆部中决摞準局兵-Τ消资合作·社印顰 A7 B7 五、發明説明（15) 因此，左側的凸塊/電極對在加熱./加壓階段用盡自由空 間，並且遭受干涉及碰撞/扭曲。另一方面，右側的凸塊 /電極對在二者之間具有充分.的自由空間，因而不發生碰 撞/扭曲。本發明的濃密導電粒子層的一重要功能爲此層 可調整地充塡在每一凸塊/電極對之間的任何自由空間中 ，以改善凸塊/電極對之間的接靥電阻（降低）及導電性 (提高）。濃密導電粒子層的厚度（亦即圖1中的H*)對 於扭曲的凸塊/電極對與間隔分開的凸塊/電極對均相同 ，提供對接的凸塊/電極對之間的調整的主要是凸塊2， 電極7(例如18厚），及/或絕緣層8的機械變形 〇 雖然在本發明中的凸塊2，電極7，及/或絕緣層8 在加壓期間遭受某些變形，但是所遭受的變形小於許多其 他不利方案所遭受的變形。更具體地說，圖1 0爲顯示本 發明與不利方案之間的比較的照片。圖1 0下方的照片顯 示不利的方案B。在此方案中，具有導電粒子的熱固性（ 相對於熱塑性）層塗覆在導電凸塊上，並且設定成由於升 髙的溫度而硬化。 ' 因爲使用硬化（亦即非撓性）的熱固性層，所以在加 壓期間必須施加高壓（與本發明相比），造成若干不利的 結果。更具體地說，高壓造成導電凸塊上的硬化熱固性層 破裂及移動至導電凸塊周圍的區域。因此，此破裂的熱固 性層不能改善凸塊/電極對之間的接觸電阻（降低）及導 電性（提高）。除了熱固性餍的損壞/破裂外，髙壓·造成 本紙張尺度適用中國Κ家標啤（rNS ) Λ4規格（210X297公釐） ---------装-- 請先时讀背面之注意事項再填寫本頁) ,ιτ 線 18 - 經濟部中女標準局另-T消费合作社印褽 A7 B7 五、發明説明（16 ) 凸塊2，電極7〜及/或絕緣暦8的極度扭曲。更具體地 說，圖1 0下方的照片顯示基體電極及基體均極度扭曲。 此極度扭曲很不利而可能造成許多問題，例如基體電極從 基體剝落，基體電極破裂或斷裂，間隙的徹底改變而造成 基體電極與基體接地平面（圖10下方的照片中直的較淺 的彩色條）之間的阻抗的徹底改變，及/或基體電極與基 體接地平面之間的短路。相比之下，如圖1 0上方的照片 中所示的本發明的結構遭受較小的變形，因此較不可能發 生剝落，破裂，斷裂，阻抗改變，及/或短路。 另外，本發明也利用下方充塡樹脂9及/或導電糊3 中的殘餘應力及/或區域L(圖1C)中的導電糊的撓性 來吸收連接結構中的線性膨脹/收縮應力，以導致具有良 好的膨脹/收縮循環數目（例如1000)的結構？更具 體地說，充塡樹脂在冷卻/固定期間的收縮（在製造期間 )在連接結構內導致殘餘應力。另外，在冷卻/固定期間 的繼續加壓也會增加殘餘應力。已發現此殘餘應力及/或 區域L(圖1C)中的導電糊的撓性在結構後續的正常操 气 作的加熱/冷卻期間有利地吸收線性膨脹/收縮應力。因 此，可確保增加的可靠性。 另外，本發明的加熱階段很有利。更具體地說，形成 在有機電路基體6上的絕緣樹脂8由於加熱而軟化，使得 有機電路基體6的電極7及絕緣樹脂8可在需要時在與無 任何加熱下嘗試變形的情況相比相當低的壓力下變形*另 外，設置在凸出凸塊2與有機電路基體6的電極7之間的 本紙張尺度適用中國國家標埤（（’NS ) Λ4現格（210X297公釐〉 ----------^------、u------0 '{請先閲讀背面之注意事項再填寫本頁) • 19 · 經湞部中央標準局t3cJ·消费合作社印4,1木 A7 __B7_ 五、發明説明（17 ) 導電糊3中的熱塑性樹脂5由於加熱而軟化，使得軟化的 熱塑性樹脂環繞凸出電極2被壓力擠出，因而產生導電粒 子4具有_密濃度的區域10。 另外，經由上述過程，可獲得圖1所示的安裝結構。 在圖1所示的倒裝晶片連接結構中，凸出凸塊2及電極7 的高度的任何變化是由濃密的導電粒子層及/或由有機電 路基體6的電極7及樹脂8的變形來補償，因而可增進製 造期間的良率。另外，藉著在每一凸塊/電極對之間形成 具有高密度的導電粒子4的層，可實現低電阻/高導電性 的連接。另外，藉著在加上充塡樹脂9時對半導體I C裝 置1與電路基體6之間的充塡樹脂9加壓及加熱以硬化樹 脂，可確保可靠性》 雖然根據本發明，半導體I C裝置1在充塡樹脂9施 加於基體後才安裝，但是也可先將半導體I C裝置1安裝 在有機電路基體6上，然後以充塡樹脂9充塡二者之間的 間隙。或者，也可以導電糊3塗覆有機電路基體6的電極 7而非凸塊2。另外，凸出凸塊2不限於引線凸塊，而可 爲一般的擠製，衝屋凸塊或類似者。 ％ 如上所述，在形成本發明的具有半導體I C裝置1及 有機電路基體6的倒裝晶片結構時，可在對基體不附加任 何特殊製程或任何特殊材料下以高良率建構穩定的低連接 電阻的連接結構。結果，可實現可廣泛地用於數位及類比 I C的低成本的倒裝晶片結構。如此，本發明具有髙應用 性來在任何產品領域中實現低成本及高功能，例如從·高速 本紙張尺度通用中國囤家標埤((、NS ) Λ4規格（2丨0X297公嫠) ---------餐------<τ------0 <請先閲讀背面之注意事項再填寫本頁) -20- A7 ____B7 五、發明説明（18) 訊號傳輸系統到二般消費者的電子設備。 雖然已參考若干所示的較佳實施例來敘述本發明，但 是必須瞭禅熟悉此項技術者可達成在本發明的原理的精神 及範圍內的無數種其他的修正及實施例。更具體地說，在 不離開本發明的精神下，在上述的揭示，圖式，及附隨的 申請專利範圍的範圍內可對結構的組件部份進行合理的變 化及修正。除了組件部份及/或結構的_化及修正外，對 於熟悉此項技術者而言另外的利用也很明顯。例如，本發 明的用來補償電極的非平面狀的導電糊，加熱，及加壓的 安排也可應用於半導體I c裝置以外的較大環境，例如可 應用來補償叠合的印刷電路板對印刷電路板的連接之間的 非平面狀連接。 (請先閱«背面之注意事項再填寫本頁) 經遗部中决標準局負J-消资合作社印裝 本紙張尺度適用中國囤家標啤（CNS ) Λ4規格（210X297公釐） 21

Claims (1)

  1. 經濟部中央橾準局負工消费合作社印«. A8 B8 C8 __ D8 六、申請專利範園 1 ·—種連接結構，包含： 第一組件，具有第一電極； 〆 第二铒件，具有相應於該第一電極的第二電極：及 導電糊，設置在該第一電極的至少一部份與該第二電 極的至少一部份之間以及相鄰於該第一及第二電極設置， 該導電糊內具有用來增進該第一電極與該第二電極之間的 電連接的導電粒子， 其中在設置在該第一電極與第二電極之間的該導電糊 內的導電粒子的密度大於在相鄰於該第一及第二電極設置 的該導電糊內的導電粒子的密度》 2 ·—種連接結構，包含： 第一組件，具有第一電極； 第二組件，具有相應於該第一電極的第二電極；.及 導電糊，在該第一電極的至少一部份與該第二電極的 至少一部份上，且其內具有用來增進該第一電極與該第二 電極之間的電連接的導電粒子， 其中該導電糊在直接設置在該第一電極與該第二電極 之間的區域所具有的導電粒子密度比在該第一電極及該第 二電極的其他部份所具有的導電粒子密度高。 3 · —種倒裝晶片連接結構，包含： 半導體積體電路（I C)裝置’具有第一電極； 竜路基體，具有相應於該第—電極的第二電極：及 導電糊，設置在該第一電極的至少—部份與該第二電 極的至少一部份之間以及相鄰於該第一及第二電極設置’ 本紙張尺度逋用中國國家樣準（CNS ) A4规格（210 X 297公釐）^ ---------餐------tr------^ (請先閱讀背面之注項再填寫本買)
    經濟部中央標準局負工消费合作社印策 夂、申請專利範圍 胃導電糊內具有用來增進該第一電極與該第二電極之間的 電連接的導電粒子， 其中在設置在該第一電極與第二電極之間的該導電糊 內的導電粒子的密度大於在相鄰於該第一及第二電極設置 的該導電糊內的導電粒子的密度》 4·如申請專利範圍第3項所述的倒裝晶片連接結構 ’其中該第一電極爲引線接合凸塊，擠製凸塊，電鍍凸塊 ’蝕刻凸塊，及模衝壓凸塊的至少之一的形式的凸出電極 〇 5·如申請專利範圍第3項所述的倒裝晶片連接結構 ，其中該第一電極爲金凸塊，銀凸塊，及銀/錫合金凸塊 的至少之一。 6·如申請專利範圍第3項所述的倒裝晶片連接結構 ，其中該第二電極爲電極襯墊及電極線的至少之一的形式 的印刷電路電極的至少之一。 7 ·如申請專利範圍第3項所述的倒裝晶片連接結構 ，其中該導電糊包含熱塑性樹脂及熱塑性黏著劑的至少之 一，而該導電糊內的該導電粒子爲金粉末，銀粉末，及銀 鉑合金粉末之一。 8 ·如申請專利範圍第3項所述的倒裝晶片連接結構 ，其中在設置在該第一與第二電極之間的該導電糊內的該 導電粒子的密度爲至少9 7重量百分比（wt%)的濃度 〇 9.如申請專利範圍第3項所述的倒裝晶片連接結構 ---------^------ir------终 t請先背面之注$項再填寫本茛) 本紙張尺度逋用中國困家揉率（CNS ) A4规格（210X297公釐） -23- A8 B8 C8 D8 六、申請專利範園 ’其中互相電連接的該第一與第二電極之間的接觸電阻小 於5 〇毫歐姆。 1 0 ·.如申請·專利範圍第3項所述的倒裝晶片連接結 構’其中互相電連接的該第一與第二電極之間的接觸電阻 小於4 〇毫歐姆。 11·如申請專利範圍第3項所述的倒裝晶片連接結 構’其中互相電連接的該第一與第二電極之間的接觸電阻 小於3 〇毫歐姆。 1 2 ·如申請專利範圍第3項所述的倒裝晶片連接結 構’其中互相電連接的該第一與第二電極之間的接觸電阻 小於2 〇毫歐姆。 1 3 ·如申請專利範圍第3項所述的倒裝晶片連接結 構’其中互相電連接的該第一與第二電極之間的接觸電阻 小於1 0毫歐姆》 1 4 · 一種電子裝置，含有如申請專利範圍第3項所 述的倒裝晶片連接結構。 1 5 · —種倒裝晶片連接結構，包含： 經濟部中央標率局貝工消费合作社印*. 半導體積體電路（1C)裝置，具有第一電極： 電姑基體，具有相應於該第一電極的第二電極；及 導電糊，在該第一電極的至少一部份與該第二電極的 至少一部份上，且其內具有用來增進該第一電極與該第二 電極之間的電連接的導電粒子， 其中該導電糊在直接設置在該第一電極與該第二電極 之間的區域所具有的導電粒子密度比在該第一電極及該第 本紙張尺度適用中•國家椹率（CNS > A4规格（210X297公釐) -24- 經濟部中央橾率局貝工消费合作社印«. A8 B8 C8 六、申請專利範園 二電極的其他部份所具有的導電粒子密度高。 16·如申請專利範圍第15項所述的倒裝晶片連接 結構，其中__第一·電極爲引線接合凸塊，擠製凸塊，電鍍 凸塊，蝕刻凸塊，及模衝壓凸塊的至少之一的形式的凸出 電極。 17·如申請專利範圍第15項所述的倒裝晶片連接 結構，其中該第一電極爲金凸塊，銀凸塊，及銀/錫合金 凸塊的至少之一。 1 8 ·如申請專利範圔第1 5項所述的倒裝晶片連接 結構，其中該第二電極爲電極襯墊及電極線的至少之一的 形式的印刷電路電極的至少之一。 1 9 ·如申請專利範圍第1 5項所述的倒裝晶片連接 結構，其中該導電糊包含熱塑性樹脂及熱塑性黏著劑的至 少之一，而該導電糊內的該導電粒子爲金粉末，銀粉末， 及銀鉑合金粉末之一。 2 〇 ·如申請專利範圔第1 5項所述的倒裝晶片連接 結構，其中在設置在該第一與第二電極之間的該導電糊內 的該導電粒子的密度爲至少9 7重量百分比（w t 的 濃度。 2 1 ·如申請專利範圍第1 5項所述的倒裝晶片連接 結構，其中互相電連接的該第一與第二電極之間的接觸電 阻小於5 0毫歐姆。 2 2 ♦如申請專利範圍第1 5項所述的倒裝晶片連接 結構，其中互相電連接的該第一與第二電極之間的接觸電 本纸尺度逋用中國國家糅率（CNS ) Λ4规格（210X297公釐） ---------^— {請先M1T背面之注^•項再填寫本頁) 訂 線 25 B8 C8 ___ D8 六、申請專利範困 阻小於4 0毫歐姆。 2 3 ·如申請專利範圍第1 5項所述的倒裝晶片連接 結構’其中互相電連接的該第—與第二電極之間的接觸電 阻小於3 0毫歐姆。 2 4 ·如申請專利範圍第1 5項所述的倒裝晶片連接 結構’其中互相電連接的該第一與第二電極之間的接觸電 阻小於2 0毫歐姆。 2 5 ·如申請專利範圍第1 5項所述的倒裝晶片連接 結構’其中互相電連接的該第一與第二電極之間的接觸電 阻小於1 〇毫歐姆。 2 6 ·—種電子裝置，含有如申請專利範圍第1 5項 所述的倒裝晶片連接結構。 ---------#------tr------终 c*請先Mtr背*之注$項再壤寫本買) 經濟部中央揉牟局工消费合作社印*. 本紙⑽逍用中國賴準（峰娜（酶腸·26·
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