JP2014529199A - サブマウント上にvcselチップを組立てる方法 - Google Patents
サブマウント上にvcselチップを組立てる方法 Download PDFInfo
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- JP2014529199A JP2014529199A JP2014534039A JP2014534039A JP2014529199A JP 2014529199 A JP2014529199 A JP 2014529199A JP 2014534039 A JP2014534039 A JP 2014534039A JP 2014534039 A JP2014534039 A JP 2014534039A JP 2014529199 A JP2014529199 A JP 2014529199A
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- 238000000034 method Methods 0.000 title claims abstract description 37
- 229910000679 solder Inorganic materials 0.000 claims abstract description 52
- 239000002184 metal Substances 0.000 claims description 25
- 229910052751 metal Inorganic materials 0.000 claims description 25
- 239000000463 material Substances 0.000 claims description 20
- 238000009736 wetting Methods 0.000 claims description 14
- 238000005476 soldering Methods 0.000 claims description 11
- 238000000151 deposition Methods 0.000 claims description 10
- 229910017750 AgSn Inorganic materials 0.000 claims description 6
- 238000000059 patterning Methods 0.000 claims description 6
- 229910052738 indium Inorganic materials 0.000 claims description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 99
- 239000010936 titanium Substances 0.000 description 12
- 239000000758 substrate Substances 0.000 description 11
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 230000001419 dependent effect Effects 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 238000001465 metallisation Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 1
- 229910007637 SnAg Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
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- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000003550 marker Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0233—Mounting configuration of laser chips
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0235—Method for mounting laser chips
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0235—Method for mounting laser chips
- H01S5/02355—Fixing laser chips on mounts
- H01S5/0237—Fixing laser chips on mounts by soldering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02469—Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/3013—AIIIBV compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/42—Arrays of surface emitting lasers
- H01S5/423—Arrays of surface emitting lasers having a vertical cavity
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
- H01L2924/12032—Schottky diode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12042—LASER
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
- H01L2924/15788—Glasses, e.g. amorphous oxides, nitrides or fluorides
Abstract
Description
Claims (11)
- サブマウント上にVCSELチップを組立てる方法において、
前記VCSELチップの接続サイド上にデウェッティング層を堆積させるステップと、
前記サブマウントの接続サイド上に更なるデウェッティング層を堆積させるステップであって、前記デウェッティング層が、前記サブマウント及び前記VCSELチップに対応する接続領域を規定するよう、パターン化された設計で堆積されるか、又は堆積後パターン化され、前記接続領域が、はんだに関するウェッティング表面を提供する、ステップと、
前記2つの接続サイドの少なくとも1つの接続領域に前記はんだを適用するステップと、
前記サブマウント上に前記VCSELチップを配置し、溶けたはんだの表面緊張力を通して前記サブマウント上で前記VCSELチップの運動を可能にするため、前記サブマウントに対して前記VCSELチップを固定することなしに前記サブマウントに前記VCSELをはんだ付けするステップとを有する、方法。 - 前記はんだが、前記2つの接続サイドの少なくとも1つの接続領域に対する固い層として、予め適用される、請求項1に記載の方法。
- 前記サブマウント上に前記デウェッティング層を堆積させる前に、電気導電層が、前記サブマウントの接続サイド上に堆積される、請求項1に記載の方法。
- 前記デウェッティング層が、安定した表面酸化物を形成するTi、TiW又はNiを堆積させることにより形成される、請求項1に記載の方法。
- 前記デウェッティング層のパターン化が、前記デウェッティング層を局所的に除去することにより、又は前記接続領域でウェッティング層を形成する物質を局所的に堆積させることにより実行される、請求項1に記載の方法。
- 前記VCSELチップが、前記サブマウントに対してそのメササイドではんだ付けされる底部エミッタVCSELアレイを有する、請求項1に記載の方法。
- 前記VCSELチップの前記接続サイド上に前記デウェッティング層を堆積させる前に、前記VCSELの前記n−接触に電気的に接続する第1の金属層が堆積され、前記n−接触が、前記VCSELを電気的に接続し、前記p型メサにわたり電流を等しく分散させるため、前記VCSELのp型メサの間の導電ネットワークを形成する、請求項6に記載の方法。
- 第2の金属層が、前記p型メサ及びp−接触に重なる前記第1の金属層として同時に堆積され、前記第1の金属層及び前記第2の金属層は、前記VCSELチップを機械的に安定させる、請求項7に記載の方法。
- AuSn、AgSn又はインジウムが、前記サブマウントで前記VCSELチップを接続する前記はんだの要素として用いられる、請求項1に記載の方法。
- サブマウント上に隣あって配置される複数のVCSELチップを有するVCSELアレイデバイスであって、
前記VCSELチップ及びサブマウントが、前記VCSELチップ及び前記サブマウントの接続サイド上の接続領域の間に形成されるはんだ接続により接続され、
前記接続領域は、前記VCSELチップ及び前記サブマウントの前記接続サイドに形成されるデウェッティング層により囲まれる、VCSELアレイデバイス。 - 前記サブマウントが、ヒートシンクに取り付けられる、請求項10に記載のデバイス。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201161545213P | 2011-10-10 | 2011-10-10 | |
US61/545,213 | 2011-10-10 | ||
PCT/IB2012/055432 WO2013054249A2 (en) | 2011-10-10 | 2012-10-08 | A method of assembling vcsel chips on a sub-mount |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2014529199A true JP2014529199A (ja) | 2014-10-30 |
JP2014529199A5 JP2014529199A5 (ja) | 2015-11-12 |
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Application Number | Title | Priority Date | Filing Date |
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JP2014534039A Pending JP2014529199A (ja) | 2011-10-10 | 2012-10-08 | サブマウント上にvcselチップを組立てる方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US9065235B2 (ja) |
EP (1) | EP2748902B1 (ja) |
JP (1) | JP2014529199A (ja) |
CN (1) | CN103843211B (ja) |
BR (1) | BR112014008336A2 (ja) |
RU (1) | RU2610339C2 (ja) |
WO (1) | WO2013054249A2 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2020529128A (ja) * | 2017-07-25 | 2020-10-01 | トリルミナ コーポレーション | 単一チップ直列接続vcselアレイ |
JP6813138B1 (ja) * | 2020-03-19 | 2021-01-13 | 三菱電機株式会社 | 光半導体素子 |
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US9620934B2 (en) | 2010-08-31 | 2017-04-11 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Flip-chip assembly comprising an array of vertical cavity surface emitting lasers (VCSELs) |
US9188751B2 (en) | 2010-08-31 | 2015-11-17 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Flip-chip assembly comprising an array of vertical cavity surface emitting lasers (VCSELSs), and an optical transmitter assembly that incorporates the flip-chip assembly |
EP3084901B1 (en) | 2013-12-20 | 2021-05-05 | TRUMPF Photonic Components GmbH | Laser module with simplified alignment |
US9819144B2 (en) * | 2015-05-14 | 2017-11-14 | Apple Inc. | High-efficiency vertical emitters with improved heat sinking |
US10034375B2 (en) | 2015-05-21 | 2018-07-24 | Apple Inc. | Circuit substrate with embedded heat sink |
US9735539B2 (en) | 2015-07-20 | 2017-08-15 | Apple Inc. | VCSEL structure with embedded heat sink |
JP7021829B2 (ja) * | 2017-08-14 | 2022-02-17 | ルメンタム・オペレーションズ・リミテッド・ライアビリティ・カンパニー | 表面実装対応可能なvcselアレイ |
DE102017119664A1 (de) * | 2017-08-28 | 2019-02-28 | Osram Opto Semiconductors Gmbh | Kantenemittierender Laserbarren |
US10826278B2 (en) * | 2017-10-11 | 2020-11-03 | Lumentum Operations Llc | Vertical-cavity surface-emitting laser array with multiple metal layers for addressing different groups of emitters |
US10881028B1 (en) | 2019-07-03 | 2020-12-29 | Apple Inc. | Efficient heat removal from electronic modules |
US11710945B2 (en) | 2020-05-25 | 2023-07-25 | Apple Inc. | Projection of patterned and flood illumination |
US11699715B1 (en) | 2020-09-06 | 2023-07-11 | Apple Inc. | Flip-chip mounting of optoelectronic chips |
CN114835207B (zh) * | 2022-05-12 | 2023-06-06 | 中国科学院生态环境研究中心 | 一种用于缓解电絮凝中极板钝化的极板修饰方法及应用 |
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2012
- 2012-10-08 US US14/350,404 patent/US9065235B2/en active Active
- 2012-10-08 EP EP12795067.3A patent/EP2748902B1/en active Active
- 2012-10-08 CN CN201280049772.3A patent/CN103843211B/zh active Active
- 2012-10-08 JP JP2014534039A patent/JP2014529199A/ja active Pending
- 2012-10-08 WO PCT/IB2012/055432 patent/WO2013054249A2/en active Application Filing
- 2012-10-08 BR BR112014008336A patent/BR112014008336A2/pt active Search and Examination
- 2012-10-08 RU RU2014118435A patent/RU2610339C2/ru not_active IP Right Cessation
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2020529128A (ja) * | 2017-07-25 | 2020-10-01 | トリルミナ コーポレーション | 単一チップ直列接続vcselアレイ |
JP7128259B2 (ja) | 2017-07-25 | 2022-08-30 | ルメンタム・オペレーションズ・リミテッド・ライアビリティ・カンパニー | 単一チップ直列接続vcselアレイ |
JP6813138B1 (ja) * | 2020-03-19 | 2021-01-13 | 三菱電機株式会社 | 光半導体素子 |
WO2021186695A1 (ja) * | 2020-03-19 | 2021-09-23 | 三菱電機株式会社 | 光半導体素子 |
Also Published As
Publication number | Publication date |
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EP2748902B1 (en) | 2019-08-28 |
EP2748902A2 (en) | 2014-07-02 |
CN103843211B (zh) | 2017-06-27 |
RU2610339C2 (ru) | 2017-02-09 |
CN103843211A (zh) | 2014-06-04 |
US20140348192A1 (en) | 2014-11-27 |
WO2013054249A2 (en) | 2013-04-18 |
US9065235B2 (en) | 2015-06-23 |
WO2013054249A3 (en) | 2013-06-13 |
RU2014118435A (ru) | 2015-11-20 |
BR112014008336A2 (pt) | 2017-04-18 |
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