TW383478B - Method of forming interconnection for semiconductor device - Google Patents

Method of forming interconnection for semiconductor device Download PDF

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Publication number
TW383478B
TW383478B TW087114421A TW87114421A TW383478B TW 383478 B TW383478 B TW 383478B TW 087114421 A TW087114421 A TW 087114421A TW 87114421 A TW87114421 A TW 87114421A TW 383478 B TW383478 B TW 383478B
Authority
TW
Taiwan
Prior art keywords
copper
item
thin film
forming
patent application
Prior art date
Application number
TW087114421A
Other languages
English (en)
Chinese (zh)
Inventor
Seung-Yun Lee
Yong-Sup Hwang
Chong-Ook Park
Dong-Won Kim
Sa-Kyun Rha
Original Assignee
Lg Semicon Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lg Semicon Co Ltd filed Critical Lg Semicon Co Ltd
Application granted granted Critical
Publication of TW383478B publication Critical patent/TW383478B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
TW087114421A 1998-02-07 1998-08-31 Method of forming interconnection for semiconductor device TW383478B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019980003580A KR100259357B1 (ko) 1998-02-07 1998-02-07 반도체 소자의 배선형성방법

Publications (1)

Publication Number Publication Date
TW383478B true TW383478B (en) 2000-03-01

Family

ID=19532693

Family Applications (1)

Application Number Title Priority Date Filing Date
TW087114421A TW383478B (en) 1998-02-07 1998-08-31 Method of forming interconnection for semiconductor device

Country Status (5)

Country Link
US (1) US6057228A (de)
JP (1) JPH11274159A (de)
KR (1) KR100259357B1 (de)
DE (1) DE19843173A1 (de)
TW (1) TW383478B (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11430692B2 (en) 2020-07-29 2022-08-30 Taiwan Semiconductor Manufacturing Company Limited Thermally stable copper-alloy adhesion layer for metal interconnect structures and methods for forming the same

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4669605B2 (ja) * 2000-11-20 2011-04-13 東京エレクトロン株式会社 半導体製造装置のクリーニング方法
US6939796B2 (en) * 2003-03-14 2005-09-06 Lam Research Corporation System, method and apparatus for improved global dual-damascene planarization
JP5023505B2 (ja) * 2006-02-09 2012-09-12 東京エレクトロン株式会社 成膜方法、プラズマ成膜装置及び記憶媒体
JPWO2013047323A1 (ja) * 2011-09-30 2015-03-26 株式会社アルバック 半導体装置の製造方法、半導体装置
US8796853B2 (en) * 2012-02-24 2014-08-05 International Business Machines Corporation Metallic capped interconnect structure with high electromigration resistance and low resistivity

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5098516A (en) * 1990-12-31 1992-03-24 Air Products And Chemicals, Inc. Processes for the chemical vapor deposition of copper and etching of copper
US5085731A (en) * 1991-02-04 1992-02-04 Air Products And Chemicals, Inc. Volatile liquid precursors for the chemical vapor deposition of copper
US5144049A (en) * 1991-02-04 1992-09-01 Air Products And Chemicals, Inc. Volatile liquid precursors for the chemical vapor deposition of copper
US5714418A (en) * 1995-11-08 1998-02-03 Intel Corporation Diffusion barrier for electrical interconnects in an integrated circuit
US5891803A (en) * 1996-06-26 1999-04-06 Intel Corporation Rapid reflow of conductive layers by directional sputtering for interconnections in integrated circuits
US5968847A (en) * 1998-03-13 1999-10-19 Applied Materials, Inc. Process for copper etch back

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11430692B2 (en) 2020-07-29 2022-08-30 Taiwan Semiconductor Manufacturing Company Limited Thermally stable copper-alloy adhesion layer for metal interconnect structures and methods for forming the same
TWI801927B (zh) * 2020-07-29 2023-05-11 台灣積體電路製造股份有限公司 半導體結構與其形成方法

Also Published As

Publication number Publication date
KR100259357B1 (ko) 2000-06-15
JPH11274159A (ja) 1999-10-08
US6057228A (en) 2000-05-02
DE19843173A1 (de) 1999-08-19
KR19990069376A (ko) 1999-09-06

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Legal Events

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GD4A Issue of patent certificate for granted invention patent
MM4A Annulment or lapse of patent due to non-payment of fees