TW373828U - Semiconductor laser - Google Patents

Semiconductor laser

Info

Publication number
TW373828U
TW373828U TW087203177U TW87203177U TW373828U TW 373828 U TW373828 U TW 373828U TW 087203177 U TW087203177 U TW 087203177U TW 87203177 U TW87203177 U TW 87203177U TW 373828 U TW373828 U TW 373828U
Authority
TW
Taiwan
Prior art keywords
semiconductor laser
laser
semiconductor
Prior art date
Application number
TW087203177U
Other languages
English (en)
Chinese (zh)
Inventor
Shoji Kitamura
Yoichi Shindo
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Publication of TW373828U publication Critical patent/TW373828U/zh

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/12Heads, e.g. forming of the optical beam spot or modulation of the optical beam
    • G11B7/125Optical beam sources therefor, e.g. laser control circuitry specially adapted for optical storage devices; Modulators, e.g. means for controlling the size or intensity of optical spots or optical traces
    • G11B7/127Lasers; Multiple laser arrays
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/023Mount members, e.g. sub-mount members
    • H01S5/0232Lead-frames
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/12Heads, e.g. forming of the optical beam spot or modulation of the optical beam
    • G11B7/123Integrated head arrangements, e.g. with source and detectors mounted on the same substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/023Mount members, e.g. sub-mount members
    • H01S5/0231Stems
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483Containers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52Encapsulations
    • H01L33/54Encapsulations having a particular shape
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/02218Material of the housings; Filling of the housings
    • H01S5/02234Resin-filled housings; the housings being made of resin
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/028Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Semiconductor Lasers (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Optical Head (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
TW087203177U 1993-12-14 1994-12-14 Semiconductor laser TW373828U (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5312360A JPH07170019A (ja) 1993-12-14 1993-12-14 半導体レーザ装置

Publications (1)

Publication Number Publication Date
TW373828U true TW373828U (en) 1999-11-01

Family

ID=18028317

Family Applications (1)

Application Number Title Priority Date Filing Date
TW087203177U TW373828U (en) 1993-12-14 1994-12-14 Semiconductor laser

Country Status (5)

Country Link
JP (1) JPH07170019A (ja)
DE (1) DE4444618A1 (ja)
FR (1) FR2713828B1 (ja)
GB (1) GB2284934B (ja)
TW (1) TW373828U (ja)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07335980A (ja) * 1994-06-07 1995-12-22 Fuji Electric Co Ltd 半導体レーザ装置
JP3082695B2 (ja) 1997-01-16 2000-08-28 日本電気株式会社 半導体レーザ装置、その製造方法
JP3735033B2 (ja) 2000-12-07 2006-01-11 シャープ株式会社 半導体レーザ装置
US6577656B2 (en) * 2001-03-13 2003-06-10 Finisar Corporation System and method of packaging a laser/detector

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01166591A (ja) * 1987-12-22 1989-06-30 Nec Kagoshima Ltd レーザダイオード
JPH02125687A (ja) * 1988-11-04 1990-05-14 Sony Corp 半導体レーザ装置
JPH02125688A (ja) * 1988-11-04 1990-05-14 Sony Corp 半導体レーザ装置
JPH02159084A (ja) * 1988-12-12 1990-06-19 Mitsubishi Electric Corp モールド発光素子
JPH0724323B2 (ja) * 1989-09-05 1995-03-15 三菱電機株式会社 半導体レーザ装置
US5140384A (en) * 1990-06-14 1992-08-18 Rohm Co., Ltd. Semiconductor laser device mounted on a stem
JPH04137580A (ja) * 1990-09-27 1992-05-12 Sharp Corp 半導体レーザ用ステム
EP0484887B1 (en) * 1990-11-07 1996-04-03 Fuji Electric Co., Ltd. Laser diode device having a protective layer on its light-emitting end face
JP2823381B2 (ja) * 1991-04-19 1998-11-11 ローム株式会社 半導体レーザ装置
JPH04346281A (ja) * 1991-05-23 1992-12-02 Sharp Corp 半導体レーザ素子
JPH04364791A (ja) * 1991-06-12 1992-12-17 Fuji Electric Co Ltd 半導体レーザ装置
JPH0523563U (ja) * 1991-07-17 1993-03-26 ソニー株式会社 半導体レーザ装置
US5307362A (en) * 1991-11-06 1994-04-26 Rohm Co., Ltd. Mold-type semiconductor laser device
US5499262A (en) * 1992-03-18 1996-03-12 Rohm Co., Ltd. Semiconductor laser light source unit
TW253996B (ja) * 1992-04-07 1995-08-11 Fuji Electric Co Ltd
DE69218431T2 (de) * 1992-10-14 1997-09-25 Ibm Gekapselte, lichtemittierende Diode und Kapselungsverfahren

Also Published As

Publication number Publication date
FR2713828A1 (fr) 1995-06-16
FR2713828B1 (fr) 1996-02-02
GB2284934A (en) 1995-06-21
JPH07170019A (ja) 1995-07-04
DE4444618A1 (de) 1995-06-22
GB9425120D0 (en) 1995-02-08
GB2284934B (en) 1997-06-25

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