TW371779B - Apparatus for manufacturing semiconductor device - Google Patents

Apparatus for manufacturing semiconductor device

Info

Publication number
TW371779B
TW371779B TW086100714A TW86100714A TW371779B TW 371779 B TW371779 B TW 371779B TW 086100714 A TW086100714 A TW 086100714A TW 86100714 A TW86100714 A TW 86100714A TW 371779 B TW371779 B TW 371779B
Authority
TW
Taiwan
Prior art keywords
manufacturing semiconductor
semiconductor device
silicon
silicon substrate
average coarseness
Prior art date
Application number
TW086100714A
Other languages
English (en)
Inventor
Shinichi Imai
Hideo Nikoh
Nobuhiro Jiwari
Original Assignee
Matsushita Electric Ind Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Ind Co Ltd filed Critical Matsushita Electric Ind Co Ltd
Application granted granted Critical
Publication of TW371779B publication Critical patent/TW371779B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
TW086100714A 1996-01-26 1997-01-23 Apparatus for manufacturing semiconductor device TW371779B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1143496 1996-01-26

Publications (1)

Publication Number Publication Date
TW371779B true TW371779B (en) 1999-10-11

Family

ID=11777987

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086100714A TW371779B (en) 1996-01-26 1997-01-23 Apparatus for manufacturing semiconductor device

Country Status (6)

Country Link
US (1) US6214740B1 (zh)
EP (1) EP0966028A1 (zh)
KR (1) KR100309225B1 (zh)
CN (1) CN1134829C (zh)
TW (1) TW371779B (zh)
WO (1) WO1997027622A1 (zh)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5054874B2 (ja) * 1999-12-02 2012-10-24 ティーガル コーポレイション リアクタ内でプラチナエッチングを行う方法
AU2002212963A1 (en) * 2000-10-25 2002-05-06 Tokyo Electron Limited Method of and structure for controlling electrode temperature
JP3971603B2 (ja) * 2001-12-04 2007-09-05 キヤノンアネルバ株式会社 絶縁膜エッチング装置及び絶縁膜エッチング方法
JP4645167B2 (ja) * 2004-11-15 2011-03-09 東京エレクトロン株式会社 フォーカスリング、プラズマエッチング装置及びプラズマエッチング方法。
US20090084987A1 (en) * 2007-09-28 2009-04-02 Varian Semiconductor Equipment Associates, Inc. Charge neutralization in a plasma processing apparatus
US20110057326A1 (en) * 2008-12-17 2011-03-10 Takayuki Kai Method for forming through electrode and semiconductor device

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5776840A (en) 1980-10-31 1982-05-14 Victor Co Of Japan Ltd Forming method of pattern
JPS61276322A (ja) 1985-05-31 1986-12-06 Mitsubishi Electric Corp 半導体製造装置
JPS6247130A (ja) 1985-08-27 1987-02-28 Kokusai Electric Co Ltd 反応性イオンエツチング装置
US5556501A (en) * 1989-10-03 1996-09-17 Applied Materials, Inc. Silicon scavenger in an inductively coupled RF plasma reactor
JPH0826464B2 (ja) 1989-10-20 1996-03-13 イビデン株式会社 プラズマエツチング用電極板
JP3044824B2 (ja) * 1991-04-27 2000-05-22 ソニー株式会社 ドライエッチング装置及びドライエッチング方法
KR100281345B1 (ko) * 1992-12-01 2001-03-02 조셉 제이. 스위니 전자기 결합성 플래너 플라즈마 장치에서의 산화물 에칭 공정
JPH07161702A (ja) 1993-10-29 1995-06-23 Applied Materials Inc 酸化物のプラズマエッチング方法
JP3257741B2 (ja) * 1994-03-03 2002-02-18 東京エレクトロン株式会社 プラズマエッチング装置及び方法
US5474649A (en) * 1994-03-08 1995-12-12 Applied Materials, Inc. Plasma processing apparatus employing a textured focus ring
US6007673A (en) * 1996-10-02 1999-12-28 Matsushita Electronics Corporation Apparatus and method of producing an electronic device

Also Published As

Publication number Publication date
EP0966028A4 (zh) 1999-12-22
CN1209908A (zh) 1999-03-03
KR100309225B1 (ko) 2002-02-19
CN1134829C (zh) 2004-01-14
EP0966028A1 (en) 1999-12-22
KR19990082008A (ko) 1999-11-15
US6214740B1 (en) 2001-04-10
WO1997027622A1 (fr) 1997-07-31

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees