JPS5776840A - Forming method of pattern - Google Patents

Forming method of pattern

Info

Publication number
JPS5776840A
JPS5776840A JP15213280A JP15213280A JPS5776840A JP S5776840 A JPS5776840 A JP S5776840A JP 15213280 A JP15213280 A JP 15213280A JP 15213280 A JP15213280 A JP 15213280A JP S5776840 A JPS5776840 A JP S5776840A
Authority
JP
Japan
Prior art keywords
wafer
etching
forming part
pattern forming
pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15213280A
Other languages
Japanese (ja)
Inventor
Shinya Tominaga
Yasuyuki Mori
Teruo Tsukuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Victor Company of Japan Ltd
Nippon Victor KK
Original Assignee
Victor Company of Japan Ltd
Nippon Victor KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Victor Company of Japan Ltd, Nippon Victor KK filed Critical Victor Company of Japan Ltd
Priority to JP15213280A priority Critical patent/JPS5776840A/en
Publication of JPS5776840A publication Critical patent/JPS5776840A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To mase the amount of etching of a pattern forming part constant regradless of the position by performing the etching under the state the electric field distribution on the side of the pattern forming part is approximately the same as the electric field distribution at the center of the pattern forming part. CONSTITUTION:An insulating film 11, a conducting film 12, and a photoresist film 13 are formed on the entire surface of a wafer 10. The photoresist film 13 is formed to have a specified pattern. Then the wafer 10 is arranged in a reactive ion etching device. At this time, e.g., a doughnut shaped silicon substrate 14, which has the same thickness as the wafer 10, permittivity close to the wafer 10, small heat conductivity, and the same material as the wafer 10, is intimately contacted to the peripheral side of the wafer 10. The reactive etching is performed under this state.
JP15213280A 1980-10-31 1980-10-31 Forming method of pattern Pending JPS5776840A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15213280A JPS5776840A (en) 1980-10-31 1980-10-31 Forming method of pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15213280A JPS5776840A (en) 1980-10-31 1980-10-31 Forming method of pattern

Publications (1)

Publication Number Publication Date
JPS5776840A true JPS5776840A (en) 1982-05-14

Family

ID=15533743

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15213280A Pending JPS5776840A (en) 1980-10-31 1980-10-31 Forming method of pattern

Country Status (1)

Country Link
JP (1) JPS5776840A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1997027622A1 (en) * 1996-01-26 1997-07-31 Matsushita Electronics Corporation Semiconductor manufacturing apparatus

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52137266A (en) * 1976-05-12 1977-11-16 Nichiden Varian Kk Method of sputter etching

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52137266A (en) * 1976-05-12 1977-11-16 Nichiden Varian Kk Method of sputter etching

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1997027622A1 (en) * 1996-01-26 1997-07-31 Matsushita Electronics Corporation Semiconductor manufacturing apparatus
US6214740B1 (en) 1996-01-26 2001-04-10 Matsushita Electronics Corporation Semiconductor manufacturing apparatus

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