TW371722B - Method for fabricating MIM non linear element, MIM non-linear element and the liquid crystal display - Google Patents
Method for fabricating MIM non linear element, MIM non-linear element and the liquid crystal displayInfo
- Publication number
- TW371722B TW371722B TW085104547A TW85104547A TW371722B TW 371722 B TW371722 B TW 371722B TW 085104547 A TW085104547 A TW 085104547A TW 85104547 A TW85104547 A TW 85104547A TW 371722 B TW371722 B TW 371722B
- Authority
- TW
- Taiwan
- Prior art keywords
- linear element
- mim
- fabricating
- mim non
- lamina
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 4
- 239000004973 liquid crystal related substance Substances 0.000 title abstract 2
- 239000011248 coating agent Substances 0.000 abstract 2
- 238000000576 coating method Methods 0.000 abstract 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 abstract 2
- 229910001936 tantalum oxide Inorganic materials 0.000 abstract 2
- 238000010438 heat treatment Methods 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1365—Active matrix addressed cells in which the switching element is a two-electrode device
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Liquid Crystal (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10037195 | 1995-03-31 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW371722B true TW371722B (en) | 1999-10-11 |
Family
ID=14272191
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW085104547A TW371722B (en) | 1995-03-31 | 1996-04-16 | Method for fabricating MIM non linear element, MIM non-linear element and the liquid crystal display |
Country Status (8)
Country | Link |
---|---|
US (1) | US5867234A (zh) |
EP (1) | EP0763861B1 (zh) |
JP (1) | JP3719265B2 (zh) |
KR (1) | KR100255437B1 (zh) |
CN (1) | CN1217429C (zh) |
DE (1) | DE69633160T2 (zh) |
TW (1) | TW371722B (zh) |
WO (1) | WO1996030953A1 (zh) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002372725A (ja) | 2001-04-04 | 2002-12-26 | Seiko Epson Corp | 非線形素子の製造方法、電気光学装置の製造方法、電気光学装置、および電子機器 |
US6285419B1 (en) | 1995-03-31 | 2001-09-04 | Seiko Epson Corporation | Two-terminal metal/insulating material/metal (MIM) device, method for manufacturing the same and liquid crystal display panel |
US6563555B1 (en) | 1995-03-31 | 2003-05-13 | Seiko Epson Corporation | Methods of manufacturing a two-terminal nonlinear device |
JPH10247754A (ja) * | 1997-01-06 | 1998-09-14 | Seiko Epson Corp | 2端子型非線形素子およびその製造方法、ならびに液晶表示パネル |
KR100458122B1 (ko) * | 2001-08-28 | 2004-11-20 | 전자부품연구원 | 액정 표시장치의 연성 mim 소자 제조방법 |
JP2004317785A (ja) | 2003-04-16 | 2004-11-11 | Seiko Epson Corp | 電気光学装置の駆動方法、電気光学装置および電子機器 |
KR100578976B1 (ko) | 2004-10-15 | 2006-05-12 | 삼성에스디아이 주식회사 | 접착력이 우수한 다층 박막 및 이의 제조방법 |
JP2006172159A (ja) * | 2004-12-16 | 2006-06-29 | Seiko Epson Corp | 電子デバイス製造システム、電子デバイスの製造方法、電子デバイス、並びに電気光学装置 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3034155B2 (ja) * | 1993-02-03 | 2000-04-17 | シャープ株式会社 | 2端子非線形素子 |
JPS56150188A (en) * | 1980-04-18 | 1981-11-20 | Hitachi Ltd | Preparation of metal oxide film |
JPH0716033B2 (ja) * | 1985-12-24 | 1995-02-22 | セイコーエプソン株式会社 | 非線形抵抗素子の製造方法 |
JP2579468B2 (ja) * | 1986-08-20 | 1997-02-05 | セイコーエプソン株式会社 | 非線形素子の製造方法 |
JPS6463929A (en) * | 1987-09-04 | 1989-03-09 | Toshiba Corp | Matrix array substrate |
JPH02301727A (ja) * | 1989-05-16 | 1990-12-13 | Seiko Epson Corp | 液晶表示装置 |
JP3328962B2 (ja) * | 1992-08-28 | 2002-09-30 | セイコーエプソン株式会社 | 液晶表示パネルの製造方法 |
-
1996
- 1996-04-01 JP JP52919296A patent/JP3719265B2/ja not_active Expired - Fee Related
- 1996-04-01 EP EP96907760A patent/EP0763861B1/en not_active Expired - Lifetime
- 1996-04-01 KR KR1019960706567A patent/KR100255437B1/ko not_active IP Right Cessation
- 1996-04-01 DE DE69633160T patent/DE69633160T2/de not_active Expired - Fee Related
- 1996-04-01 CN CN96190271XA patent/CN1217429C/zh not_active Expired - Fee Related
- 1996-04-01 US US08/750,042 patent/US5867234A/en not_active Expired - Fee Related
- 1996-04-01 WO PCT/JP1996/000903 patent/WO1996030953A1/ja active IP Right Grant
- 1996-04-16 TW TW085104547A patent/TW371722B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
JP3719265B2 (ja) | 2005-11-24 |
DE69633160T2 (de) | 2005-08-18 |
EP0763861B1 (en) | 2004-08-18 |
CN1149932A (zh) | 1997-05-14 |
CN1217429C (zh) | 2005-08-31 |
EP0763861A1 (en) | 1997-03-19 |
EP0763861A4 (en) | 1998-06-17 |
KR970703620A (ko) | 1997-07-03 |
KR100255437B1 (ko) | 2000-05-01 |
WO1996030953A1 (fr) | 1996-10-03 |
US5867234A (en) | 1999-02-02 |
DE69633160D1 (de) | 2004-09-23 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |