TW371722B - Method for fabricating MIM non linear element, MIM non-linear element and the liquid crystal display - Google Patents

Method for fabricating MIM non linear element, MIM non-linear element and the liquid crystal display

Info

Publication number
TW371722B
TW371722B TW085104547A TW85104547A TW371722B TW 371722 B TW371722 B TW 371722B TW 085104547 A TW085104547 A TW 085104547A TW 85104547 A TW85104547 A TW 85104547A TW 371722 B TW371722 B TW 371722B
Authority
TW
Taiwan
Prior art keywords
linear element
mim
fabricating
mim non
lamina
Prior art date
Application number
TW085104547A
Other languages
English (en)
Inventor
Yasushi Takano
Takumi Seki
Yasuhiro Yoshimizu
Takashi Inoue
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Application granted granted Critical
Publication of TW371722B publication Critical patent/TW371722B/zh

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/1365Active matrix addressed cells in which the switching element is a two-electrode device

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Liquid Crystal (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
TW085104547A 1995-03-31 1996-04-16 Method for fabricating MIM non linear element, MIM non-linear element and the liquid crystal display TW371722B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10037195 1995-03-31

Publications (1)

Publication Number Publication Date
TW371722B true TW371722B (en) 1999-10-11

Family

ID=14272191

Family Applications (1)

Application Number Title Priority Date Filing Date
TW085104547A TW371722B (en) 1995-03-31 1996-04-16 Method for fabricating MIM non linear element, MIM non-linear element and the liquid crystal display

Country Status (8)

Country Link
US (1) US5867234A (zh)
EP (1) EP0763861B1 (zh)
JP (1) JP3719265B2 (zh)
KR (1) KR100255437B1 (zh)
CN (1) CN1217429C (zh)
DE (1) DE69633160T2 (zh)
TW (1) TW371722B (zh)
WO (1) WO1996030953A1 (zh)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002372725A (ja) 2001-04-04 2002-12-26 Seiko Epson Corp 非線形素子の製造方法、電気光学装置の製造方法、電気光学装置、および電子機器
US6285419B1 (en) 1995-03-31 2001-09-04 Seiko Epson Corporation Two-terminal metal/insulating material/metal (MIM) device, method for manufacturing the same and liquid crystal display panel
US6563555B1 (en) 1995-03-31 2003-05-13 Seiko Epson Corporation Methods of manufacturing a two-terminal nonlinear device
JPH10247754A (ja) * 1997-01-06 1998-09-14 Seiko Epson Corp 2端子型非線形素子およびその製造方法、ならびに液晶表示パネル
KR100458122B1 (ko) * 2001-08-28 2004-11-20 전자부품연구원 액정 표시장치의 연성 mim 소자 제조방법
JP2004317785A (ja) 2003-04-16 2004-11-11 Seiko Epson Corp 電気光学装置の駆動方法、電気光学装置および電子機器
KR100578976B1 (ko) 2004-10-15 2006-05-12 삼성에스디아이 주식회사 접착력이 우수한 다층 박막 및 이의 제조방법
JP2006172159A (ja) * 2004-12-16 2006-06-29 Seiko Epson Corp 電子デバイス製造システム、電子デバイスの製造方法、電子デバイス、並びに電気光学装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3034155B2 (ja) * 1993-02-03 2000-04-17 シャープ株式会社 2端子非線形素子
JPS56150188A (en) * 1980-04-18 1981-11-20 Hitachi Ltd Preparation of metal oxide film
JPH0716033B2 (ja) * 1985-12-24 1995-02-22 セイコーエプソン株式会社 非線形抵抗素子の製造方法
JP2579468B2 (ja) * 1986-08-20 1997-02-05 セイコーエプソン株式会社 非線形素子の製造方法
JPS6463929A (en) * 1987-09-04 1989-03-09 Toshiba Corp Matrix array substrate
JPH02301727A (ja) * 1989-05-16 1990-12-13 Seiko Epson Corp 液晶表示装置
JP3328962B2 (ja) * 1992-08-28 2002-09-30 セイコーエプソン株式会社 液晶表示パネルの製造方法

Also Published As

Publication number Publication date
JP3719265B2 (ja) 2005-11-24
DE69633160T2 (de) 2005-08-18
EP0763861B1 (en) 2004-08-18
CN1149932A (zh) 1997-05-14
CN1217429C (zh) 2005-08-31
EP0763861A1 (en) 1997-03-19
EP0763861A4 (en) 1998-06-17
KR970703620A (ko) 1997-07-03
KR100255437B1 (ko) 2000-05-01
WO1996030953A1 (fr) 1996-10-03
US5867234A (en) 1999-02-02
DE69633160D1 (de) 2004-09-23

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees