TW368786B - Universal surface finish for DCA, SMT, and PAD on pad interconnections - Google Patents

Universal surface finish for DCA, SMT, and PAD on pad interconnections

Info

Publication number
TW368786B
TW368786B TW087100507A TW87100507A TW368786B TW 368786 B TW368786 B TW 368786B TW 087100507 A TW087100507 A TW 087100507A TW 87100507 A TW87100507 A TW 87100507A TW 368786 B TW368786 B TW 368786B
Authority
TW
Taiwan
Prior art keywords
pad
masking
coating
seals
nickel
Prior art date
Application number
TW087100507A
Other languages
English (en)
Inventor
Dale Ernest Goodman
Mark Kenneth Hoffmeyer
Roger Scott Krabbenhoft
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Application granted granted Critical
Publication of TW368786B publication Critical patent/TW368786B/zh

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/22—Secondary treatment of printed circuits
    • H05K3/24—Reinforcing the conductive pattern
    • H05K3/244—Finish plating of conductors, especially of copper conductors, e.g. for pads or lands
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45565—Single coating layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45599—Material
    • H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45644—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49171—Fan-out arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19105—Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Wire Bonding (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Printing Elements For Providing Electric Connections Between Printed Circuits (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)
TW087100507A 1997-06-11 1998-01-15 Universal surface finish for DCA, SMT, and PAD on pad interconnections TW368786B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/873,060 US5910644A (en) 1997-06-11 1997-06-11 Universal surface finish for DCA, SMT and pad on pad interconnections

Publications (1)

Publication Number Publication Date
TW368786B true TW368786B (en) 1999-09-01

Family

ID=25360910

Family Applications (1)

Application Number Title Priority Date Filing Date
TW087100507A TW368786B (en) 1997-06-11 1998-01-15 Universal surface finish for DCA, SMT, and PAD on pad interconnections

Country Status (7)

Country Link
US (1) US5910644A (zh)
EP (1) EP0884935B1 (zh)
KR (1) KR100295286B1 (zh)
DE (1) DE69834768T2 (zh)
MY (1) MY115395A (zh)
SG (1) SG71123A1 (zh)
TW (1) TW368786B (zh)

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US7049177B1 (en) * 2004-01-28 2006-05-23 Asat Ltd. Leadless plastic chip carrier with standoff contacts and die attach pad
US6307160B1 (en) * 1998-10-29 2001-10-23 Agilent Technologies, Inc. High-strength solder interconnect for copper/electroless nickel/immersion gold metallization solder pad and method
US8021976B2 (en) * 2002-10-15 2011-09-20 Megica Corporation Method of wire bonding over active area of a semiconductor circuit
CN1314225A (zh) * 2000-02-18 2001-09-26 德克萨斯仪器股份有限公司 铜镀层集成电路焊点的结构和方法
EP1139413B1 (en) * 2000-03-24 2005-03-16 Texas Instruments Incorporated Wire bonding process
US6417088B1 (en) 2000-07-24 2002-07-09 Chartered Semiconductor Manufacturing Ltd. Method of application of displacement reaction to form a conductive cap layer for flip-chip, COB, and micro metal bonding
US6586683B2 (en) * 2001-04-27 2003-07-01 International Business Machines Corporation Printed circuit board with mixed metallurgy pads and method of fabrication
JP2003037215A (ja) * 2001-07-26 2003-02-07 Mitsui Mining & Smelting Co Ltd 電子部品実装用基板及び電子部品実装用基板の製造方法
JP3833216B2 (ja) 2001-09-24 2006-10-11 リカ デンシ アメリカ， インコーポレイテッド 電気的テストプローブ及びその製造方法
US6784544B1 (en) * 2002-06-25 2004-08-31 Micron Technology, Inc. Semiconductor component having conductors with wire bondable metalization layers
DE10333439A1 (de) * 2003-07-23 2005-02-17 Robert Bosch Gmbh Verfahren zur Herstellung eines aus mehreren Verdrahtungsebenen bestehenden Hybrid-Produktes
DE102004030800B4 (de) * 2004-06-25 2017-05-18 Epcos Ag Verfahren zur Herstellung einer keramischen Leiterplatte
KR100752722B1 (ko) * 2006-07-10 2007-08-28 삼성전기주식회사 표면 실장용 커넥터
US7700476B2 (en) * 2006-11-20 2010-04-20 Intel Corporation Solder joint reliability in microelectronic packaging
US10251273B2 (en) * 2008-09-08 2019-04-02 Intel Corporation Mainboard assembly including a package overlying a die directly attached to the mainboard
US8251494B2 (en) * 2009-11-30 2012-08-28 Eastman Kodak Company Bondable printed wiring with improved wear resistance
US8834729B2 (en) * 2009-11-30 2014-09-16 Eastman Kodak Company Method of making bondable printed wiring member
US8394713B2 (en) * 2010-02-12 2013-03-12 Freescale Semiconductor, Inc. Method of improving adhesion of bond pad over pad metallization with a neighboring passivation layer by depositing a palladium layer
KR101125463B1 (ko) * 2010-08-17 2012-03-27 엘지이노텍 주식회사 인쇄회로기판 및 그의 제조 방법
KR101219905B1 (ko) * 2011-04-08 2013-01-09 엘지이노텍 주식회사 인쇄회로기판 및 그의 제조 방법
US8801914B2 (en) 2011-05-26 2014-08-12 Eastman Kodak Company Method of making wear-resistant printed wiring member
US20130155629A1 (en) * 2011-12-19 2013-06-20 Tong Hsing Electronic Industries, Ltd. Hermetic Semiconductor Package Structure and Method for Manufacturing the same
KR101980666B1 (ko) * 2011-12-19 2019-08-29 엘지이노텍 주식회사 인쇄회로기판 및 이의 제조 방법
KR20140043955A (ko) * 2012-09-21 2014-04-14 삼성전기주식회사 전극 패드, 이를 이용한 인쇄 회로 기판 및 그의 제조 방법
TWI576033B (zh) * 2016-05-06 2017-03-21 旭德科技股份有限公司 線路基板及其製作方法
CN110087398A (zh) * 2019-05-05 2019-08-02 东莞市奕东电子有限公司 一种新型fpc的制作方法
WO2021080600A1 (en) * 2019-10-25 2021-04-29 Hewlett-Packard Development Company, L.P. Electrical connectors

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Also Published As

Publication number Publication date
DE69834768D1 (de) 2006-07-20
US5910644A (en) 1999-06-08
KR19990006469A (ko) 1999-01-25
SG71123A1 (en) 2000-03-21
DE69834768T2 (de) 2007-05-24
EP0884935A2 (en) 1998-12-16
EP0884935A3 (en) 2000-03-08
KR100295286B1 (ko) 2001-07-12
EP0884935B1 (en) 2006-06-07
MY115395A (en) 2003-05-31

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