TW367610B - Semiconductor device provided with an ESD protection circuit - Google Patents

Semiconductor device provided with an ESD protection circuit

Info

Publication number
TW367610B
TW367610B TW086106864A TW86106864A TW367610B TW 367610 B TW367610 B TW 367610B TW 086106864 A TW086106864 A TW 086106864A TW 86106864 A TW86106864 A TW 86106864A TW 367610 B TW367610 B TW 367610B
Authority
TW
Taiwan
Prior art keywords
active region
protrusions
device provided
semiconductor device
semiconductor substrate
Prior art date
Application number
TW086106864A
Other languages
English (en)
Inventor
Dae-Kyoon Kim
Original Assignee
Hyundai Electronics Ind
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hyundai Electronics Ind filed Critical Hyundai Electronics Ind
Application granted granted Critical
Publication of TW367610B publication Critical patent/TW367610B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/811—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using FETs as protective elements

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
TW086106864A 1996-06-24 1997-05-22 Semiconductor device provided with an ESD protection circuit TW367610B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019960023263A KR100203900B1 (ko) 1996-06-24 1996-06-24 정전기 보호회로를 구비한 반도체장치

Publications (1)

Publication Number Publication Date
TW367610B true TW367610B (en) 1999-08-21

Family

ID=19463064

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086106864A TW367610B (en) 1996-06-24 1997-05-22 Semiconductor device provided with an ESD protection circuit

Country Status (7)

Country Link
US (1) US5903030A (zh)
JP (1) JP2925080B2 (zh)
KR (1) KR100203900B1 (zh)
CN (1) CN1064178C (zh)
DE (1) DE19723431B4 (zh)
GB (1) GB2313952B (zh)
TW (1) TW367610B (zh)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100263480B1 (ko) * 1998-01-13 2000-09-01 김영환 이에스디 보호회로 및 그 제조방법
KR100463203B1 (ko) * 2002-12-10 2004-12-23 삼성전자주식회사 활성 영역을 구비하는 반도체 소자
JP4694123B2 (ja) * 2003-12-24 2011-06-08 ルネサスエレクトロニクス株式会社 静電気放電保護素子
US7518192B2 (en) * 2004-11-10 2009-04-14 Taiwan Semiconductor Manufacturing Company, Ltd. Asymmetrical layout structure for ESD protection
US7646063B1 (en) 2005-06-15 2010-01-12 Pmc-Sierra, Inc. Compact CMOS ESD layout techniques with either fully segmented salicide ballasting (FSSB) in the source and/or drain regions
KR100650867B1 (ko) * 2005-12-29 2006-11-28 동부일렉트로닉스 주식회사 협채널 금속 산화물 반도체 트랜지스터
CN103809341B (zh) * 2014-02-17 2016-04-27 北京京东方光电科技有限公司 阵列基板和显示装置
EP3340284B1 (en) * 2015-08-21 2025-04-09 Hitachi Astemo, Ltd. Semiconductor device, semiconductor integrated circuit, and load driving device

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5270565A (en) * 1989-05-12 1993-12-14 Western Digital Corporation Electro-static discharge protection circuit with bimodal resistance characteristics
GB8921841D0 (en) * 1989-09-27 1989-11-08 Sarnoff David Res Center Nmos device with integral esd protection
JP3025059B2 (ja) * 1991-06-28 2000-03-27 旭電化工業株式会社 ギ酸エステル化合物
KR950011636B1 (ko) * 1992-03-04 1995-10-07 금성일렉트론주식회사 개선된 레이아웃을 갖는 다이내믹 랜덤 액세스 메모리와 그것의 메모리셀 배치방법
JP3088203B2 (ja) * 1992-08-31 2000-09-18 日本電気株式会社 半導体装置
US5451799A (en) * 1992-12-28 1995-09-19 Matsushita Electric Industrial Co., Ltd. MOS transistor for protection against electrostatic discharge
US5365103A (en) * 1993-02-25 1994-11-15 Hewlett-Packard Company Punchthru ESD device along centerline of power pad
GB2277197B (en) * 1993-04-13 1997-08-27 Motorola Inc Voltage protection arrangement
JP3196422B2 (ja) * 1993-04-30 2001-08-06 ソニー株式会社 入出力保護回路
US5623156A (en) * 1995-09-28 1997-04-22 Cypress Semiconductor Corporation Electrostatic discharge (ESD) protection circuit and structure for output drivers
US5789791A (en) * 1996-08-27 1998-08-04 National Semiconductor Corporation Multi-finger MOS transistor with reduced gate resistance

Also Published As

Publication number Publication date
US5903030A (en) 1999-05-11
GB2313952B (en) 2001-05-09
KR100203900B1 (ko) 1999-06-15
JP2925080B2 (ja) 1999-07-26
GB9711504D0 (en) 1997-07-30
KR980006227A (ko) 1998-03-30
CN1064178C (zh) 2001-04-04
DE19723431B4 (de) 2006-03-09
JPH1056133A (ja) 1998-02-24
GB2313952A (en) 1997-12-10
DE19723431A1 (de) 1998-01-02
CN1170236A (zh) 1998-01-14

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees