TW364207B - Method for producing DRAM - Google Patents

Method for producing DRAM

Info

Publication number
TW364207B
TW364207B TW086119412A TW86119412A TW364207B TW 364207 B TW364207 B TW 364207B TW 086119412 A TW086119412 A TW 086119412A TW 86119412 A TW86119412 A TW 86119412A TW 364207 B TW364207 B TW 364207B
Authority
TW
Taiwan
Prior art keywords
implant
region
punch
memory cell
field
Prior art date
Application number
TW086119412A
Other languages
English (en)
Inventor
Sun-Chieh Chien
Chen-Chiu Hsue
De-Yuan Wu
Original Assignee
United Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by United Microelectronics Corp filed Critical United Microelectronics Corp
Priority to TW086119412A priority Critical patent/TW364207B/zh
Priority to US09/040,553 priority patent/US6017799A/en
Application granted granted Critical
Publication of TW364207B publication Critical patent/TW364207B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/09—Manufacture or treatment with simultaneous manufacture of the peripheral circuit region and memory cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
TW086119412A 1997-12-20 1997-12-20 Method for producing DRAM TW364207B (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
TW086119412A TW364207B (en) 1997-12-20 1997-12-20 Method for producing DRAM
US09/040,553 US6017799A (en) 1997-12-20 1998-03-18 Method of fabricating dynamic random memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW086119412A TW364207B (en) 1997-12-20 1997-12-20 Method for producing DRAM

Publications (1)

Publication Number Publication Date
TW364207B true TW364207B (en) 1999-07-11

Family

ID=21627453

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086119412A TW364207B (en) 1997-12-20 1997-12-20 Method for producing DRAM

Country Status (2)

Country Link
US (1) US6017799A (zh)
TW (1) TW364207B (zh)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11330385A (ja) * 1998-05-20 1999-11-30 Mitsumi Electric Co Ltd Ｃｍｏｓデバイス
JP2000269458A (ja) * 1999-03-17 2000-09-29 Mitsubishi Electric Corp 半導体装置およびその製造方法
US6501131B1 (en) * 1999-07-22 2002-12-31 International Business Machines Corporation Transistors having independently adjustable parameters
US6514807B1 (en) * 2001-09-18 2003-02-04 Macronix International Co., Ltd. Method for fabricating semiconductor device applied system on chip

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2682425B2 (ja) * 1993-12-24 1997-11-26 日本電気株式会社 半導体装置の製造方法
JPH08172187A (ja) * 1994-12-16 1996-07-02 Mitsubishi Electric Corp 半導体装置及びその製造方法
US5939762A (en) * 1997-06-26 1999-08-17 Integrated Device Technology, Inc. SRAM cell using thin gate oxide pulldown transistors

Also Published As

Publication number Publication date
US6017799A (en) 2000-01-25

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Legal Events

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MK4A Expiration of patent term of an invention patent