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Application filed by United Microelectronics CorpfiledCriticalUnited Microelectronics Corp
Priority to TW83106392ApriorityCriticalpatent/TW238426B/en
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Publication of TW238426BpublicationCriticalpatent/TW238426B/en
A process of coding method for read only memory with overlaid insulating layer includes: 1. implementing one buried mask on the substrate to implant ion for forming buried bit lines with gaps; 2. growing the oxide; 3. depositing segregating layer and implementing one coding mask to etch the segregating layer to form the cover on the destined active region with open circuit; 4. forming gate oxide; 5. depositing/doping/masking/etching the poly to form the word lines; By the segregating layer between the active region and word line, which is overlaid on the specific area, to make the active region keep in the open-circuit status.
TW83106392A1994-07-141994-07-14Process for read only memory
TW238426B
(en)