TW364202B - Integrated semiconductor memory device with "buried-plate-electrode" and its production method - Google Patents

Integrated semiconductor memory device with "buried-plate-electrode" and its production method

Info

Publication number
TW364202B
TW364202B TW086114127A TW86114127A TW364202B TW 364202 B TW364202 B TW 364202B TW 086114127 A TW086114127 A TW 086114127A TW 86114127 A TW86114127 A TW 86114127A TW 364202 B TW364202 B TW 364202B
Authority
TW
Taiwan
Prior art keywords
electrode
memory device
plate
buried
semiconductor memory
Prior art date
Application number
TW086114127A
Other languages
English (en)
Inventor
Carlos Mazure-Espejo
Gunther Schindler
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Application granted granted Critical
Publication of TW364202B publication Critical patent/TW364202B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate

Landscapes

  • Semiconductor Memories (AREA)
  • Dram (AREA)
TW086114127A 1996-09-30 1997-09-27 Integrated semiconductor memory device with "buried-plate-electrode" and its production method TW364202B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19640215A DE19640215C1 (de) 1996-09-30 1996-09-30 Integrierte Halbleiterspeicheranordnung mit "Buried-Plate-Elektrode"

Publications (1)

Publication Number Publication Date
TW364202B true TW364202B (en) 1999-07-11

Family

ID=7807380

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086114127A TW364202B (en) 1996-09-30 1997-09-27 Integrated semiconductor memory device with "buried-plate-electrode" and its production method

Country Status (8)

Country Link
US (1) US6627934B1 (zh)
EP (1) EP0931347A1 (zh)
JP (1) JP3898766B2 (zh)
KR (1) KR100291565B1 (zh)
CN (1) CN1160793C (zh)
DE (1) DE19640215C1 (zh)
TW (1) TW364202B (zh)
WO (1) WO1998015007A1 (zh)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9305929B1 (en) 2015-02-17 2016-04-05 Micron Technology, Inc. Memory cells
US10134982B2 (en) 2015-07-24 2018-11-20 Micron Technology, Inc. Array of cross point memory cells
US10396145B2 (en) 2017-01-12 2019-08-27 Micron Technology, Inc. Memory cells comprising ferroelectric material and including current leakage paths having different total resistances
US11170834B2 (en) 2019-07-10 2021-11-09 Micron Technology, Inc. Memory cells and methods of forming a capacitor including current leakage paths having different total resistances
CN117337029A (zh) * 2022-06-24 2024-01-02 长鑫存储技术有限公司 一种半导体结构及其形成方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR900001836B1 (ko) * 1985-07-02 1990-03-24 마쯔시다덴기산교 가부시기가이샤 반도체기억장치 및 그 제조방법
EP0236089B1 (en) * 1986-03-03 1992-08-05 Fujitsu Limited Dynamic random access memory having trench capacitor
US4794434A (en) * 1987-07-06 1988-12-27 Motorola, Inc. Trench cell for a dram
JPH0797626B2 (ja) * 1987-10-31 1995-10-18 日本電気株式会社 Ｍｉｓ型半導体記憶装置
JPH01146354A (ja) * 1987-12-02 1989-06-08 Mitsubishi Electric Corp 半導体記憶装置
JPH0262073A (ja) * 1988-08-26 1990-03-01 Mitsubishi Electric Corp 半導体記憶装置
JPH0272663A (ja) * 1988-09-07 1990-03-12 Fujitsu Ltd 半導体記憶装置
US5225698A (en) * 1989-08-12 1993-07-06 Samsung Electronics Co., Inc. Semi-conductor device with stacked trench capacitor
DE3931381A1 (de) * 1989-09-20 1991-03-28 Siemens Ag Halbleiterschichtaufbau mit vergrabener verdrahtungsebene, verfahren fuer dessen herstellung und anwendung der vergrabenen verdrahtungsebene als vergrabene zellplatte fuer drams
JPH0513676A (ja) 1991-07-02 1993-01-22 Toshiba Corp 半導体装置
JP2994110B2 (ja) * 1991-09-09 1999-12-27 株式会社東芝 半導体記憶装置
JP3151684B2 (ja) * 1992-04-24 2001-04-03 株式会社日立製作所 半導体装置及びその製造方法
JPH06216336A (ja) * 1992-10-27 1994-08-05 Sanyo Electric Co Ltd 半導体装置の製造方法
JPH0786427A (ja) 1993-09-10 1995-03-31 Toshiba Corp 半導体装置およびその製造方法
JP3224916B2 (ja) 1993-09-10 2001-11-05 株式会社東芝 半導体装置の製造方法
KR0123751B1 (ko) * 1993-10-07 1997-11-25 김광호 반도체장치 및 그 제조방법
JPH07193141A (ja) * 1993-12-27 1995-07-28 Toshiba Corp 半導体記憶装置

Also Published As

Publication number Publication date
EP0931347A1 (de) 1999-07-28
DE19640215C1 (de) 1998-02-19
KR100291565B1 (ko) 2001-05-15
WO1998015007A1 (de) 1998-04-09
JP2000503814A (ja) 2000-03-28
US6627934B1 (en) 2003-09-30
JP3898766B2 (ja) 2007-03-28
CN1160793C (zh) 2004-08-04
CN1231767A (zh) 1999-10-13
KR20000036160A (ko) 2000-06-26

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees