TW362293B - Thermoelectric piece and process of making the same - Google Patents

Thermoelectric piece and process of making the same

Info

Publication number
TW362293B
TW362293B TW086119578A TW86119578A TW362293B TW 362293 B TW362293 B TW 362293B TW 086119578 A TW086119578 A TW 086119578A TW 86119578 A TW86119578 A TW 86119578A TW 362293 B TW362293 B TW 362293B
Authority
TW
Taiwan
Prior art keywords
semiconductor
thermoelectric
diffusion barrier
barrier layer
layer
Prior art date
Application number
TW086119578A
Other languages
English (en)
Inventor
Takehiko Sato
Kazuo Kamada
Original Assignee
Matsushita Electric Works Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Works Ltd filed Critical Matsushita Electric Works Ltd
Application granted granted Critical
Publication of TW362293B publication Critical patent/TW362293B/zh

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80Constructional details
    • H10N10/85Thermoelectric active materials
    • H10N10/851Thermoelectric active materials comprising inorganic compositions
    • H10N10/852Thermoelectric active materials comprising inorganic compositions comprising tellurium, selenium or sulfur
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80Constructional details
    • H10N10/85Thermoelectric active materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
TW086119578A 1996-12-24 1997-12-23 Thermoelectric piece and process of making the same TW362293B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP34287896A JP3144328B2 (ja) 1996-12-24 1996-12-24 熱電変換素子およびその製造方法

Publications (1)

Publication Number Publication Date
TW362293B true TW362293B (en) 1999-06-21

Family

ID=18357210

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086119578A TW362293B (en) 1996-12-24 1997-12-23 Thermoelectric piece and process of making the same

Country Status (8)

Country Link
US (1) US6083770A (zh)
JP (1) JP3144328B2 (zh)
KR (1) KR100310478B1 (zh)
CN (1) CN1125493C (zh)
DE (1) DE19781457C2 (zh)
RU (1) RU2151450C1 (zh)
TW (1) TW362293B (zh)
WO (1) WO1998028801A1 (zh)

Families Citing this family (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100445317B1 (ko) * 1999-02-24 2004-08-18 조창제 열 운동 전자 정류 장치 및 이를 이용하여 물체 열을 전기에너지로 전환하는 방법
US6700053B2 (en) * 2000-07-03 2004-03-02 Komatsu Ltd. Thermoelectric module
KR100440268B1 (ko) * 2001-04-21 2004-07-30 김창선 열전재료의 제조방법
US6709882B2 (en) 2001-08-27 2004-03-23 Lightwave Microsystems Corporation Planar lightwave circuit active device metallization process
JP2003198117A (ja) * 2001-12-28 2003-07-11 Matsushita Electric Ind Co Ltd はんだ付け方法および接合構造体
DE10314876B4 (de) * 2003-04-01 2008-02-14 Infineon Technologies Ag Verfahren zum mehrstufigen Herstellen von Diffusionslötverbindungen und seine Verwendung für Leistungsbauteile mit Halbleiterchips
GB2403173A (en) * 2003-06-25 2004-12-29 King S College London Soldering refractory metal surfaces
CN100452466C (zh) * 2003-09-12 2009-01-14 密歇根州州立大学托管委员会 热电材料及其制备方法、热电元件以及从热能生成电流的方法
CA2622981A1 (en) * 2005-09-19 2007-04-12 Carrier Corporation Minimization of interfacial resistance across thermoelectric devices by surface modification of the thermoelectric material
KR100721925B1 (ko) * 2005-12-21 2007-05-28 주식회사 포스코 열전모듈의 제조 방법
JP2008010612A (ja) * 2006-06-29 2008-01-17 Komatsu Ltd 熱電素子及びその製造方法、並びに、熱電モジュール
CN100583478C (zh) * 2007-10-16 2010-01-20 中国科学院上海硅酸盐研究所 一种π型CoSb3基热电转换器件及制备方法
KR101524544B1 (ko) * 2008-03-28 2015-06-02 페어차일드코리아반도체 주식회사 펠티어 효과를 이용한 열전기 모듈을 포함하는 전력 소자패키지 및 그 제조 방법
CN101358313B (zh) * 2008-05-09 2010-06-02 北京科技大学 一种提高Bi-S二元体系热电材料性能的方法
KR20100009455A (ko) * 2008-07-18 2010-01-27 삼성전자주식회사 열전재료 및 칼코게나이드 화합물
US8710348B2 (en) * 2008-10-21 2014-04-29 Dirk N. Weiss Stacked thin-film superlattice thermoelectric devices
EP2419376A1 (en) * 2009-04-13 2012-02-22 The Ohio State University Thermoelectric alloys with improved thermoelectric power factor
KR101101704B1 (ko) 2009-12-22 2012-01-05 한국세라믹기술원 열전소자용 전극 및 그 제조방법
WO2011119149A1 (en) * 2010-03-23 2011-09-29 Hewlett-Packard Development Company Thermoelectric device
US20120060886A1 (en) * 2010-09-10 2012-03-15 Hamilton Sundstrand Corporation High temperature flexible electrode
US8995134B2 (en) 2011-05-27 2015-03-31 Lear Corporation Electrically-cooled power module
KR101207300B1 (ko) 2012-07-27 2012-12-03 한국기계연구원 열전 소자 제조방법
DE102012214700A1 (de) * 2012-08-17 2014-02-20 Behr Gmbh & Co. Kg Thermoelektrischer Wärmetauscher
KR102094995B1 (ko) * 2012-10-08 2020-03-31 삼성전자주식회사 열전모듈, 이를 구비한 열전장치, 및 열전모듈의 제조방법
CN102925861A (zh) * 2012-11-20 2013-02-13 大连理工大学 具有高导电性和高热稳定性的Cu-Ni-Sn合金薄膜及其制备工艺
CN103060750B (zh) * 2012-11-20 2015-03-25 深圳大学 一种铋锑碲基热电薄膜的制备方法
DE102013214988A1 (de) * 2013-07-31 2015-02-05 Behr Gmbh & Co. Kg Thermoelektrisches Modul
JP6078438B2 (ja) * 2013-08-30 2017-02-08 株式会社Kelk 熱電発電モジュール
JP6164569B2 (ja) * 2013-10-15 2017-07-19 住友電気工業株式会社 熱電素子および熱電素子の製造方法
KR101469760B1 (ko) * 2013-10-15 2014-12-05 국방과학연구소 열전 특성에 최적화된 열전 소재
KR101439461B1 (ko) 2013-11-08 2014-09-17 한국기계연구원 열전 반도체 모듈 및 이의 제조방법
CN104934523B (zh) * 2014-03-19 2017-11-10 中国科学院上海硅酸盐研究所 一种中高温热电模块
TWI557957B (zh) * 2014-12-08 2016-11-11 財團法人工業技術研究院 熱電模組結構及其製造方法
RU2601243C1 (ru) * 2015-06-25 2016-10-27 Федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский университет "Московский институт электронной техники" (МИЭТ) Способ получения термоэлектрического элемента
EP3467888B1 (en) 2016-06-01 2021-04-21 LG Innotek Co., Ltd. Thermoelectric leg and thermoelectric element comprising same
WO2018038285A1 (ko) * 2016-08-23 2018-03-01 희성금속 주식회사 열전소자 및 이를 포함하는 열전모듈
CN109524536B (zh) * 2017-09-19 2020-03-17 中国科学院上海硅酸盐研究所 热电元器件扩散阻挡层的筛选方法
JP6733706B2 (ja) * 2018-06-12 2020-08-05 ヤマハ株式会社 熱電変換モジュール
EP3817073B1 (en) * 2018-06-27 2023-03-08 Panasonic Intellectual Property Management Co., Ltd. Thermoelectric conversion element and thermoelectric conversion module
RU2686493C1 (ru) * 2018-08-09 2019-04-29 Федеральное государственное учреждение "Федеральный научно-исследовательский центр "Кристаллография и фотоника" Российской академии наук" Магниторезистивный сплав на основе висмута
JP7419917B2 (ja) * 2020-03-26 2024-01-23 株式会社プロテリアル 熱電変換素子の製造方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3045057A (en) * 1960-02-26 1962-07-17 Westinghouse Electric Corp Thermoelectric material
GB952678A (en) * 1961-01-23 1964-03-18 Wfstinghouse Electric Corp Composite thermoelectric elements and devices
US3444005A (en) * 1965-01-04 1969-05-13 Martin Marietta Corp Thermoelectric hot shoe contacts
US4180415A (en) * 1965-06-11 1979-12-25 Minnesota Mining And Manufacturing Company Hot-junction electrode members for copper/silver chalcogenides
US3650844A (en) * 1968-09-19 1972-03-21 Gen Electric Diffusion barriers for semiconductive thermoelectric generator elements
US3859143A (en) * 1970-07-23 1975-01-07 Rca Corp Stable bonded barrier layer-telluride thermoelectric device
US3988171A (en) * 1971-06-07 1976-10-26 Rockwell International Corporation Bonded electrical contact for thermoelectric semiconductor element
US3808670A (en) * 1972-05-24 1974-05-07 Isotopes Inc Exothermic bonding of thermoelectric couples
FR2261639B1 (zh) * 1974-02-15 1976-11-26 Cit Alcatel
US4489742A (en) * 1983-07-21 1984-12-25 Energy Conversion Devices, Inc. Thermoelectric device and method of making and using same
US4650919A (en) * 1984-08-01 1987-03-17 The United States Of America As Represented By The United States Department Of Energy Thermoelectric generator and method for the fabrication thereof
JPH04249385A (ja) * 1991-02-06 1992-09-04 Komatsu Electron Kk 熱電装置
US5241828A (en) * 1992-07-17 1993-09-07 Conductus, Inc. Cryogenic thermoelectric cooler
US5429680A (en) * 1993-11-19 1995-07-04 Fuschetti; Dean F. Thermoelectric heat pump
US5817188A (en) * 1995-10-03 1998-10-06 Melcor Corporation Fabrication of thermoelectric modules and solder for such fabrication
JP3459328B2 (ja) * 1996-07-26 2003-10-20 日本政策投資銀行 熱電半導体およびその製造方法

Also Published As

Publication number Publication date
RU2151450C1 (ru) 2000-06-20
CN1200198A (zh) 1998-11-25
DE19781457C2 (de) 2002-11-14
US6083770A (en) 2000-07-04
JP3144328B2 (ja) 2001-03-12
DE19781457T1 (de) 1999-06-17
KR100310478B1 (ko) 2001-11-15
CN1125493C (zh) 2003-10-22
JPH10190070A (ja) 1998-07-21
KR19990067520A (ko) 1999-08-25
WO1998028801A1 (en) 1998-07-02

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