TW362237B - Method for fabricating phase shift mask by controlling an exposure dose - Google Patents

Method for fabricating phase shift mask by controlling an exposure dose

Info

Publication number
TW362237B
TW362237B TW086111674A TW86111674A TW362237B TW 362237 B TW362237 B TW 362237B TW 086111674 A TW086111674 A TW 086111674A TW 86111674 A TW86111674 A TW 86111674A TW 362237 B TW362237 B TW 362237B
Authority
TW
Taiwan
Prior art keywords
photoresist film
blocking layer
light blocking
pattern
exposure dose
Prior art date
Application number
TW086111674A
Other languages
English (en)
Inventor
Sung-Yong Moon
In-Kyun Shin
Ho-Young Kang
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Application granted granted Critical
Publication of TW362237B publication Critical patent/TW362237B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/30—Alternating PSM, e.g. Levenson-Shibuya PSM; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW086111674A 1996-09-10 1997-08-14 Method for fabricating phase shift mask by controlling an exposure dose TW362237B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019960039148A KR0183923B1 (ko) 1996-09-10 1996-09-10 위상 반전 마스크의 제조방법

Publications (1)

Publication Number Publication Date
TW362237B true TW362237B (en) 1999-06-21

Family

ID=19473259

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086111674A TW362237B (en) 1996-09-10 1997-08-14 Method for fabricating phase shift mask by controlling an exposure dose

Country Status (4)

Country Link
US (1) US5853921A (zh)
JP (1) JP3566042B2 (zh)
KR (1) KR0183923B1 (zh)
TW (1) TW362237B (zh)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6130173A (en) * 1998-03-19 2000-10-10 Lsi Logic Corporation Reticle based skew lots
US6150058A (en) * 1998-06-12 2000-11-21 Taiwan Semiconductor Manufacturing Company Method of making attenuating phase-shifting mask using different exposure doses
US6426175B2 (en) * 1999-02-22 2002-07-30 International Business Machines Corporation Fabrication of a high density long channel DRAM gate with or without a grooved gate
US6251547B1 (en) 1999-10-22 2001-06-26 Taiwan Semiconductor Manufacturing Company Simplified process for making an outrigger type phase shift mask
TW575786B (en) * 2000-03-14 2004-02-11 Takashi Nishi Exposure controlling photomask and production method thereof
US6472766B2 (en) 2001-01-05 2002-10-29 Photronics, Inc. Step mask
KR100393230B1 (ko) * 2001-08-16 2003-07-31 삼성전자주식회사 잔막율을 조절할 수 있는 포토레지스트 패턴의 형성방법
US6757886B2 (en) * 2001-11-13 2004-06-29 International Business Machines Corporation Alternating phase shift mask design with optimized phase shapes
KR100811252B1 (ko) * 2001-12-28 2008-03-07 주식회사 하이닉스반도체 복합 위상반전 마스크 제작방법
US6566280B1 (en) * 2002-08-26 2003-05-20 Intel Corporation Forming polymer features on a substrate
US6838214B1 (en) * 2002-09-10 2005-01-04 Taiwan Semiconductor Manufacturing Company Method of fabrication of rim-type phase shift mask
US20050019673A1 (en) * 2003-07-22 2005-01-27 Kunal Taravade Attenuated film with etched quartz phase shift mask
KR100882730B1 (ko) 2007-11-06 2009-02-06 주식회사 동부하이텍 마스크 제조 방법

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08202020A (ja) * 1995-01-31 1996-08-09 Sony Corp フォトマスクにおけるパターン形状評価方法、フォトマスク、フォトマスクの作製方法、フォトマスクのパターン形成方法、並びに露光方法
US5695896A (en) * 1995-12-04 1997-12-09 Micron Technology, Inc. Process for fabricating a phase shifting mask

Also Published As

Publication number Publication date
JPH1097052A (ja) 1998-04-14
JP3566042B2 (ja) 2004-09-15
US5853921A (en) 1998-12-29
KR19980020629A (ko) 1998-06-25
KR0183923B1 (ko) 1999-04-01

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees