TW357199B - Process for plasma enhanced anneal of titanium nitride - Google Patents

Process for plasma enhanced anneal of titanium nitride

Info

Publication number
TW357199B
TW357199B TW085110752A TW85110752A TW357199B TW 357199 B TW357199 B TW 357199B TW 085110752 A TW085110752 A TW 085110752A TW 85110752 A TW85110752 A TW 85110752A TW 357199 B TW357199 B TW 357199B
Authority
TW
Taiwan
Prior art keywords
titanium nitride
plasma enhanced
anneal
enhanced anneal
grou
Prior art date
Application number
TW085110752A
Other languages
English (en)
Inventor
Robert F Foster
Joseph T Hillman
Rikhit Arora
Original Assignee
Materials Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Materials Research Corp filed Critical Materials Research Corp
Application granted granted Critical
Publication of TW357199B publication Critical patent/TW357199B/zh

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321After treatment
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58After-treatment
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56After-treatment

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
TW085110752A 1995-06-05 1996-09-03 Process for plasma enhanced anneal of titanium nitride TW357199B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/461,665 US5567483A (en) 1995-06-05 1995-06-05 Process for plasma enhanced anneal of titanium nitride

Publications (1)

Publication Number Publication Date
TW357199B true TW357199B (en) 1999-05-01

Family

ID=23833463

Family Applications (1)

Application Number Title Priority Date Filing Date
TW085110752A TW357199B (en) 1995-06-05 1996-09-03 Process for plasma enhanced anneal of titanium nitride

Country Status (9)

Country Link
US (1) US5567483A (zh)
EP (1) EP0832311B1 (zh)
JP (1) JP3740508B2 (zh)
KR (1) KR100402085B1 (zh)
AU (1) AU5936196A (zh)
CA (1) CA2222227A1 (zh)
DE (1) DE69603277T2 (zh)
TW (1) TW357199B (zh)
WO (1) WO1996039548A1 (zh)

Families Citing this family (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5773363A (en) 1994-11-08 1998-06-30 Micron Technology, Inc. Semiconductor processing method of making electrical contact to a node
US5661115A (en) 1994-11-08 1997-08-26 Micron Technology, Inc. Method of reducing carbon incorporation into films produced by chemical vapor deposition involving organic precursor compounds
US5747116A (en) * 1994-11-08 1998-05-05 Micron Technology, Inc. Method of forming an electrical contact to a silicon substrate
US5989999A (en) * 1994-11-14 1999-11-23 Applied Materials, Inc. Construction of a tantalum nitride film on a semiconductor wafer
US6699530B2 (en) * 1995-07-06 2004-03-02 Applied Materials, Inc. Method for constructing a film on a semiconductor wafer
JPH08170174A (ja) * 1994-12-14 1996-07-02 Nec Corp TiN膜の形成方法
US5712193A (en) * 1994-12-30 1998-01-27 Lucent Technologies, Inc. Method of treating metal nitride films to reduce silicon migration therein
US6933021B2 (en) * 1995-07-06 2005-08-23 Applied Materials, Inc. Method of TiSiN deposition using a chemical vapor deposition (CVD) process
JPH09111460A (ja) * 1995-10-11 1997-04-28 Anelva Corp チタン系導電性薄膜の作製方法
US5741547A (en) * 1996-01-23 1998-04-21 Micron Technology, Inc. Method for depositing a film of titanium nitride
US5970378A (en) * 1996-09-03 1999-10-19 Taiwan Semiconductor Manufacturing Company, Ltd. Multi-step plasma treatment process for forming low resistance titanium nitride layer
US5801098A (en) * 1996-09-03 1998-09-01 Motorola, Inc. Method of decreasing resistivity in an electrically conductive layer
GB2319533B (en) * 1996-11-22 2001-06-06 Trikon Equip Ltd Methods of forming a barrier layer
GB2319532B (en) * 1996-11-22 2001-01-31 Trikon Equip Ltd Method and apparatus for treating a semiconductor wafer
KR100510917B1 (ko) * 1996-11-22 2005-11-09 트리콘 이큅먼츠 리미티드 장벽층형성방법
JP3469420B2 (ja) * 1996-12-20 2003-11-25 東京エレクトロン株式会社 Cvd成膜方法
US5989652A (en) * 1997-01-31 1999-11-23 Tokyo Electron Limited Method of low temperature plasma enhanced chemical vapor deposition of tin film over titanium for use in via level applications
US6635569B1 (en) 1998-04-20 2003-10-21 Tokyo Electron Limited Method of passivating and stabilizing a Ti-PECVD process chamber and combined Ti-PECVD/TiN-CVD processing method and apparatus
US6022800A (en) * 1998-04-29 2000-02-08 Worldwide Semiconductor Manufacturing Corporation Method of forming barrier layer for tungsten plugs in interlayer dielectrics
US6364954B2 (en) 1998-12-14 2002-04-02 Applied Materials, Inc. High temperature chemical vapor deposition chamber
US6221174B1 (en) 1999-02-11 2001-04-24 Applied Materials, Inc. Method of performing titanium/titanium nitride integration
US6207567B1 (en) * 1999-04-12 2001-03-27 United Microelectronics Corp. Fabricating method of glue layer and barrier layer
US6555183B2 (en) * 1999-06-11 2003-04-29 Applied Materials, Inc. Plasma treatment of a titanium nitride film formed by chemical vapor deposition
US6335282B1 (en) 1999-08-26 2002-01-01 Micron Technology, Inc. Method of forming a titanium comprising layer and method of forming a conductive silicide contact
US20030235652A1 (en) * 1999-11-17 2003-12-25 Satoshi Wakabayashi Precoat film forming method
TW484189B (en) * 1999-11-17 2002-04-21 Tokyo Electron Ltd Precoat film forming method, idling method of film forming device, loading table structure, film forming device and film forming method
US6544882B1 (en) * 2000-01-13 2003-04-08 Taiwan Semiconductor Manufacturing Company Method to improve reliability of multilayer structures of FSG (F-doped SiO2) dielectric layers and aluminum-copper-TiN layers in integrated circuits
US6451692B1 (en) 2000-08-18 2002-09-17 Micron Technology, Inc. Preheating of chemical vapor deposition precursors
US6930041B2 (en) * 2000-12-07 2005-08-16 Micron Technology, Inc. Photo-assisted method for semiconductor fabrication
JP4545433B2 (ja) * 2003-12-26 2010-09-15 東京エレクトロン株式会社 成膜方法
KR100636037B1 (ko) * 2004-11-19 2006-10-18 삼성전자주식회사 티타늄 질화막 형성 방법 및 이를 수행하기 위한 장치
KR100636036B1 (ko) * 2004-11-19 2006-10-18 삼성전자주식회사 티타늄 질화막 형성 방법 및 이를 수행하기 위한 장치
US7341950B2 (en) * 2005-12-07 2008-03-11 Infineon Technologies Ag Method for controlling a thickness of a first layer and method for adjusting the thickness of different first layers
JP2008311457A (ja) * 2007-06-15 2008-12-25 Renesas Technology Corp 半導体装置の製造方法
JP2010177382A (ja) * 2009-01-28 2010-08-12 Tokyo Electron Ltd 成膜方法及びプラズマ成膜装置
WO2011055671A1 (ja) * 2009-11-04 2011-05-12 東京エレクトロン株式会社 成膜方法およびキャパシタの形成方法
US10266947B2 (en) * 2016-08-23 2019-04-23 Lam Research Corporation Rotary friction welded blank for PECVD heated showerhead
JP6144399B1 (ja) * 2016-09-30 2017-06-07 内外化学製品株式会社 蒸気復水系の腐食抑制剤および腐食抑制方法
US11791181B2 (en) 2019-09-18 2023-10-17 Beijing E-Town Semiconductor Technology Co., Ltd Methods for the treatment of workpieces

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61137367A (ja) * 1984-12-10 1986-06-25 Hitachi Ltd 半導体集積回路装置の製造方法
JPS63229814A (ja) * 1987-03-19 1988-09-26 Nec Corp 半導体集積回路の製造方法
US4792378A (en) * 1987-12-15 1988-12-20 Texas Instruments Incorporated Gas dispersion disk for use in plasma enhanced chemical vapor deposition reactor
JP2776826B2 (ja) * 1988-04-15 1998-07-16 株式会社日立製作所 半導体装置およびその製造方法
JPH02310918A (ja) * 1989-05-25 1990-12-26 Fujitsu Ltd 半導体装置の製造方法
JPH03135018A (ja) * 1989-10-20 1991-06-10 Hitachi Ltd 半導体装置の製造方法およびその装置
US4987102A (en) * 1989-12-04 1991-01-22 Motorola, Inc. Process for forming high purity thin films
JPH04100221A (ja) * 1990-08-18 1992-04-02 Fujitsu Ltd 半導体装置の製造方法
US5052339A (en) * 1990-10-16 1991-10-01 Air Products And Chemicals, Inc. Radio frequency plasma enhanced chemical vapor deposition process and reactor
KR100228259B1 (ko) * 1990-10-24 1999-11-01 고지마 마따오 박막의 형성방법 및 반도체장치
US5232871A (en) * 1990-12-27 1993-08-03 Intel Corporation Method for forming a titanium nitride barrier layer
JPH0567596A (ja) * 1991-09-05 1993-03-19 Matsushita Electron Corp ドライエツチング後処理方法
US5356476A (en) * 1992-06-15 1994-10-18 Materials Research Corporation Semiconductor wafer processing method and apparatus with heat and gas flow control
US5434110A (en) * 1992-06-15 1995-07-18 Materials Research Corporation Methods of chemical vapor deposition (CVD) of tungsten films on patterned wafer substrates
US5370739A (en) * 1992-06-15 1994-12-06 Materials Research Corporation Rotating susceptor semiconductor wafer processing cluster tool module useful for tungsten CVD
US5342652A (en) * 1992-06-15 1994-08-30 Materials Research Corporation Method of nucleating tungsten on titanium nitride by CVD without silane
US5416045A (en) * 1993-02-18 1995-05-16 Micron Technology, Inc. Method for chemical vapor depositing a titanium nitride layer on a semiconductor wafer and method of annealing tin films
US5246881A (en) * 1993-04-14 1993-09-21 Micron Semiconductor, Inc. Low-pressure chemical vapor deposition process for depositing high-density, highly-conformal, titanium nitride films of low bulk resistivity
US5443647A (en) * 1993-04-28 1995-08-22 The United States Of America As Represented By The Secretary Of The Army Method and apparatus for depositing a refractory thin film by chemical vapor deposition
US5378501A (en) * 1993-10-05 1995-01-03 Foster; Robert F. Method for chemical vapor deposition of titanium nitride films at low temperatures
EP0711846A1 (en) * 1994-11-14 1996-05-15 Applied Materials, Inc. Titanium nitride deposited by chemical vapor deposition

Also Published As

Publication number Publication date
KR19990022507A (ko) 1999-03-25
JP2001507514A (ja) 2001-06-05
EP0832311A1 (en) 1998-04-01
CA2222227A1 (en) 1996-12-12
DE69603277T2 (de) 2000-02-03
US5567483A (en) 1996-10-22
DE69603277D1 (de) 1999-08-19
EP0832311B1 (en) 1999-07-14
KR100402085B1 (ko) 2003-12-18
AU5936196A (en) 1996-12-24
WO1996039548A1 (en) 1996-12-12
JP3740508B2 (ja) 2006-02-01

Similar Documents

Publication Publication Date Title
TW357199B (en) Process for plasma enhanced anneal of titanium nitride
AU7091094A (en) A method for chemical vapor deposition of titanium nitride films at low temperatures
ZA945929B (en) Hydrophilic films by plasma polymerisation
EP0552375A4 (en) Chemical vapor deposition apparatus, method of semiconductor film formation, and method of producing thin film semiconductor device
TW358978B (en) Method to etch a destruction-area on a semiconductor substrate-edge as well as an etching equipment
TW371782B (en) Use of a capping layer to attain low titanium-silicide sheet resistance and uniform silicide thickness for sub-micro silicon and polysilicon line
TW343375B (en) Low dielectric constant silicon dioxide sandwich layer
EP0661732A3 (en) Process for plasma-assisted chemical vapor deposition of silicon oxynitride layers.
AU3123297A (en) Method for dissociating biotin complexes
IL133820A0 (en) Method and apparatus for fabrication of thin films by chemical vapor deposition
KR970008361A (ko) 반도체 기판의 전처리방법
KR910007089A (ko) 반도체 웨이퍼 처리 장치용 세척 방법
KR950000931A (ko) 증착 처리시 물체가 수용기에 고착하는 것을 제한하는 방법
TW352454B (en) Improved method for forming aluminum contacts
TW374770B (en) Method for depositing substituted fluorocarbon polymeric layers
TW334481B (en) Method of depositing thin films by means of plasma enhanced chemical vapor deposition
DE69505942D1 (de) Verfahren und Vorrichtung zur Herstellung dünner Schichten von metallischen Verbindungen
ATE196513T1 (de) Haftschicht für die abscheidung von wolfram
EP0727826A3 (en) A method for forming a thin semiconductor film and a plasma CVD apparatus to be used in this method
TW351770B (en) Shield layer, method for forming shield layer and producing substrate
WO1992000399A3 (en) Method for forming a surface coating
FR2692598B1 (fr) Procédé de dépôt d'un film contenant du silicium à la surface d'un substrat métallique et procédé de traitement anti-corrosion.
AU6985796A (en) Method of producing dihydroxypyrimidine derivatives
DE69829850D1 (de) Verfahren und zusammensetzungen zum nachätzungsbehandeln von schichtfolgen in der halbleiterherstellung
CA2341608A1 (fr) Procede pour le depot sous vide d'un substrat courbe

Legal Events

Date Code Title Description
MK4A Expiration of patent term of an invention patent