TW355833B - Method of manufacturing a radiation-resistant semiconductor integrated circuit - Google Patents

Method of manufacturing a radiation-resistant semiconductor integrated circuit

Info

Publication number
TW355833B
TW355833B TW085110503A TW85110503A TW355833B TW 355833 B TW355833 B TW 355833B TW 085110503 A TW085110503 A TW 085110503A TW 85110503 A TW85110503 A TW 85110503A TW 355833 B TW355833 B TW 355833B
Authority
TW
Taiwan
Prior art keywords
radiation
conductivity type
manufacturing
integrated circuit
semiconductor integrated
Prior art date
Application number
TW085110503A
Other languages
English (en)
Inventor
Yoshiaki Sera
Original Assignee
Nec Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nec Corp filed Critical Nec Corp
Application granted granted Critical
Publication of TW355833B publication Critical patent/TW355833B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
    • H01L21/76213—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose
    • H01L21/76216—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose introducing electrical active impurities in the local oxidation region for the sole purpose of creating channel stoppers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
TW085110503A 1995-09-08 1996-08-29 Method of manufacturing a radiation-resistant semiconductor integrated circuit TW355833B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7231715A JP2778550B2 (ja) 1995-09-08 1995-09-08 半導体集積回路の製造方法

Publications (1)

Publication Number Publication Date
TW355833B true TW355833B (en) 1999-04-11

Family

ID=16927887

Family Applications (1)

Application Number Title Priority Date Filing Date
TW085110503A TW355833B (en) 1995-09-08 1996-08-29 Method of manufacturing a radiation-resistant semiconductor integrated circuit

Country Status (5)

Country Link
US (1) US6146977A (zh)
JP (1) JP2778550B2 (zh)
KR (1) KR100262235B1 (zh)
CN (1) CN1152798A (zh)
TW (1) TW355833B (zh)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6320245B1 (en) 1998-05-19 2001-11-20 Nec Corporation Radiation-hardened semiconductor device
EP1542289A1 (fr) * 2003-12-11 2005-06-15 STMicroelectronics S.A. Structure MOS résistante aux radiations
KR100672708B1 (ko) * 2004-12-30 2007-01-22 동부일렉트로닉스 주식회사 시모스 이미지 센서의 격리막 형성방법
KR100657130B1 (ko) * 2005-12-27 2006-12-13 동부일렉트로닉스 주식회사 반도체 소자 및 그 제조 방법
CN100373585C (zh) * 2006-03-17 2008-03-05 中国科学院上海微系统与信息技术研究所 提高金属氧化物半导体器件场区抗总剂量的加固方法
JP2011512026A (ja) * 2008-01-17 2011-04-14 リルジャ，クラス，オロフ ソフト−エラー・ハード・エレクトロニクス及び耐放射線論理セルのためのレイアウト方法
US9083341B2 (en) 2008-01-17 2015-07-14 Robust Chip Inc. Soft error resilient circuit design method and logic cells
CN102110692A (zh) * 2011-01-24 2011-06-29 中国电子科技集团公司第五十八研究所 抗辐照eeprom存储阵列隔离结构
CN102522424B (zh) * 2011-12-23 2014-04-30 北京大学 一种减小电荷共享效应的cmos器件及其制备方法
US8652929B2 (en) 2011-12-23 2014-02-18 Peking University CMOS device for reducing charge sharing effect and fabrication method thereof
CN104752513B (zh) * 2015-03-12 2017-11-21 西安电子科技大学 一种制备基于65nm工艺的冗余掺杂抗辐照MOS场效应管的方法
CN108565212A (zh) * 2017-11-29 2018-09-21 珠海创飞芯科技有限公司 一种mos晶体管的制作方法及mos晶体管

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4261761A (en) * 1979-09-04 1981-04-14 Tektronix, Inc. Method of manufacturing sub-micron channel width MOS transistor
JPS61226967A (ja) * 1985-03-30 1986-10-08 Toshiba Corp Ｍｉｓ型半導体装置
US4987093A (en) * 1987-04-15 1991-01-22 Texas Instruments Incorporated Through-field implant isolated devices and method
NL8802219A (nl) * 1988-09-09 1990-04-02 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting met een siliciumlichaam waarin door ionenimplantaties halfgeleidergebieden worden gevormd.
JP2822278B2 (ja) * 1991-03-05 1998-11-11 呉羽化学工業株式会社 塩化ビニル系単量体の懸濁重合方法
JPH0653232A (ja) * 1992-08-03 1994-02-25 Mitsubishi Electric Corp 半導体装置およびその製造方法
US5240874A (en) * 1992-10-20 1993-08-31 Micron Semiconductor, Inc. Semiconductor wafer processing method of forming channel stops and method of forming SRAM circuitry
US5405788A (en) * 1993-05-24 1995-04-11 Micron Technology, Inc. Method for forming and tailoring the electrical characteristics of semiconductor devices
KR0152909B1 (ko) * 1994-10-21 1998-12-01 문정환 반도체장치의 격리구조의 제조방법
JPH08125180A (ja) * 1994-10-25 1996-05-17 Mitsubishi Electric Corp 半導体装置およびその製造方法
US5556798A (en) * 1994-12-01 1996-09-17 United Microelectronics Corp. Method for isolating non-volatile memory cells

Also Published As

Publication number Publication date
KR970018223A (ko) 1997-04-30
JP2778550B2 (ja) 1998-07-23
US6146977A (en) 2000-11-14
JPH0982793A (ja) 1997-03-28
CN1152798A (zh) 1997-06-25
KR100262235B1 (ko) 2000-07-15

Similar Documents

Publication Publication Date Title
EP0189914B1 (en) Semiconductor integrated circuit device and method of manufacturing the same
US5276346A (en) Semiconductor integrated circuit device having protective/output elements and internal circuits
US5838033A (en) Integrated circuit with gate conductor defined resistor
TW355833B (en) Method of manufacturing a radiation-resistant semiconductor integrated circuit
US5610089A (en) Method of fabrication of semiconductor integrated circuit device
US6730555B2 (en) Transistors having selectively doped channel regions
KR100232813B1 (ko) 저 누설 soi 집적 회로를 제조하기 위한 방법
US5675168A (en) Unsymmetrical MOS device having a gate insulator area offset from the source and drain areas, and ESD protection circuit including such a MOS device
JPS60100469A (ja) 半導体装置
US6900081B2 (en) Method of manufacturing semiconductor integrated circuit device
JPS62265765A (ja) 半導体装置の製造方法
JP3200978B2 (ja) 半導体装置の製造方法
JPS604596B2 (ja) 相補形ｍｏｓ集積回路の製造方法
JPH08227936A (ja) 半導体装置及びその製造方法
JPS61131476A (ja) 半導体装置
JPS627148A (ja) 相補型半導体装置及びその製造方法
KR100358571B1 (ko) 반도체소자의 제조방법
JPH04206950A (ja) 半導体装置の製造方法
JPH03246967A (ja) 半導体装置
JPH0282576A (ja) 半導体装置及びその製造方法
JPS6185854A (ja) 半導体装置
JPH01211962A (ja) Ｃｍｏｓ型集積回路の製造方法
JPH10284616A (ja) 半導体集積回路の製造方法
JPH0456162A (ja) 半導体装置
JPH0499386A (ja) 半導体装置