CN108565212A - 一种mos晶体管的制作方法及mos晶体管 - Google Patents
一种mos晶体管的制作方法及mos晶体管 Download PDFInfo
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- CN108565212A CN108565212A CN201711227979.6A CN201711227979A CN108565212A CN 108565212 A CN108565212 A CN 108565212A CN 201711227979 A CN201711227979 A CN 201711227979A CN 108565212 A CN108565212 A CN 108565212A
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- Prior art keywords
- mos transistor
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- mos
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- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 23
- 150000002500 ions Chemical class 0.000 claims abstract description 60
- 238000002347 injection Methods 0.000 claims abstract description 37
- 239000007924 injection Substances 0.000 claims abstract description 37
- 239000000758 substrate Substances 0.000 claims description 28
- 238000002955 isolation Methods 0.000 claims description 22
- 239000004065 semiconductor Substances 0.000 claims description 12
- 230000003471 anti-radiation Effects 0.000 claims description 4
- 230000002596 correlated effect Effects 0.000 claims description 3
- 239000013078 crystal Substances 0.000 claims description 3
- 238000002513 implantation Methods 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 17
- 229910052760 oxygen Inorganic materials 0.000 abstract description 17
- 239000001301 oxygen Substances 0.000 abstract description 17
- 238000005468 ion implantation Methods 0.000 abstract description 14
- 238000000034 method Methods 0.000 abstract description 14
- 238000000137 annealing Methods 0.000 abstract description 7
- 229910052681 coesite Inorganic materials 0.000 abstract description 6
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 6
- 230000000694 effects Effects 0.000 abstract description 6
- 239000000377 silicon dioxide Substances 0.000 abstract description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 6
- 229910052682 stishovite Inorganic materials 0.000 abstract description 6
- 229910052905 tridymite Inorganic materials 0.000 abstract description 6
- 230000005855 radiation Effects 0.000 abstract description 5
- 238000010586 diagram Methods 0.000 description 10
- 239000002253 acid Substances 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000005520 cutting process Methods 0.000 description 6
- 230000005611 electricity Effects 0.000 description 6
- 230000005527 interface trap Effects 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000000873 masking effect Effects 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 230000000875 corresponding effect Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000001706 oxygenating effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0638—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layer, e.g. with channel stopper
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- High Energy & Nuclear Physics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
Description
Claims (9)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201711227979.6A CN108565212A (zh) | 2017-11-29 | 2017-11-29 | 一种mos晶体管的制作方法及mos晶体管 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201711227979.6A CN108565212A (zh) | 2017-11-29 | 2017-11-29 | 一种mos晶体管的制作方法及mos晶体管 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN108565212A true CN108565212A (zh) | 2018-09-21 |
Family
ID=63529499
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201711227979.6A Pending CN108565212A (zh) | 2017-11-29 | 2017-11-29 | 一种mos晶体管的制作方法及mos晶体管 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN108565212A (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112687716A (zh) * | 2020-12-28 | 2021-04-20 | 中国电子科技集团公司第四十四研究所 | 提高抗电离效应辐照能力的ccd放大器结构 |
CN112992936A (zh) * | 2021-02-09 | 2021-06-18 | 京东方科技集团股份有限公司 | 一种显示背板的制作方法、显示背板及显示装置 |
WO2022205169A1 (zh) * | 2021-03-31 | 2022-10-06 | 华为技术有限公司 | 一种场效应晶体管、其制作方法、开关电路及电路板 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6146977A (en) * | 1995-09-08 | 2000-11-14 | Nec Corporation | Method of manufacturing a radiation-resistant semiconductor integrated circuit |
CN101221957A (zh) * | 2007-01-10 | 2008-07-16 | 中国科学院微电子研究所 | 双栅全耗尽soi cmos器件及其制备方法 |
CN103928520A (zh) * | 2014-03-21 | 2014-07-16 | 上海新储集成电路有限公司 | 一种背栅调制全耗尽mos器件及其制备方法 |
CN104752513A (zh) * | 2015-03-12 | 2015-07-01 | 西安电子科技大学 | 基于65nm工艺的冗余掺杂抗辐照MOS场效应管 |
-
2017
- 2017-11-29 CN CN201711227979.6A patent/CN108565212A/zh active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6146977A (en) * | 1995-09-08 | 2000-11-14 | Nec Corporation | Method of manufacturing a radiation-resistant semiconductor integrated circuit |
CN101221957A (zh) * | 2007-01-10 | 2008-07-16 | 中国科学院微电子研究所 | 双栅全耗尽soi cmos器件及其制备方法 |
CN103928520A (zh) * | 2014-03-21 | 2014-07-16 | 上海新储集成电路有限公司 | 一种背栅调制全耗尽mos器件及其制备方法 |
CN104752513A (zh) * | 2015-03-12 | 2015-07-01 | 西安电子科技大学 | 基于65nm工艺的冗余掺杂抗辐照MOS场效应管 |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112687716A (zh) * | 2020-12-28 | 2021-04-20 | 中国电子科技集团公司第四十四研究所 | 提高抗电离效应辐照能力的ccd放大器结构 |
CN112687716B (zh) * | 2020-12-28 | 2022-06-24 | 中国电子科技集团公司第四十四研究所 | 提高抗电离效应辐照能力的ccd放大器结构 |
CN112992936A (zh) * | 2021-02-09 | 2021-06-18 | 京东方科技集团股份有限公司 | 一种显示背板的制作方法、显示背板及显示装置 |
CN112992936B (zh) * | 2021-02-09 | 2022-07-19 | 京东方科技集团股份有限公司 | 一种显示背板的制作方法、显示背板及显示装置 |
US20220254852A1 (en) * | 2021-02-09 | 2022-08-11 | Boe Technology Group Co., Ltd. | Method for fabricating displaying backplane, displaying backplane and displaying device |
US11864422B2 (en) * | 2021-02-09 | 2024-01-02 | Boe Technology Group Co., Ltd. | Method for fabricating displaying backplane, displaying backplane and displaying device |
WO2022205169A1 (zh) * | 2021-03-31 | 2022-10-06 | 华为技术有限公司 | 一种场效应晶体管、其制作方法、开关电路及电路板 |
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TA01 | Transfer of patent application right |
Effective date of registration: 20200728 Address after: Room 203, building 3, Tsinghua Science and Technology Park, 101 Tangjiawan University Road, high tech Zone, Zhuhai City, Guangdong Province Applicant after: SHENZHEN RESEARCH INSTITUTE OF TSINGHUA University INNOVATION CENTER IN ZHUHAI Address before: 519080 A906-907 unit, block A, Tsinghua Science and Technology Park (Zhuhai) innovation building, 101 University Road, Tangjia Bay, Zhuhai, Guangdong. Applicant before: Zhuhai Chuangfeixin Technology Co.,Ltd. |
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TA01 | Transfer of patent application right | ||
RJ01 | Rejection of invention patent application after publication |
Application publication date: 20180921 |
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RJ01 | Rejection of invention patent application after publication |