TW350118B - Method for manufacturing capacitor of semiconductor device - Google Patents
Method for manufacturing capacitor of semiconductor deviceInfo
- Publication number
- TW350118B TW350118B TW086109969A TW86109969A TW350118B TW 350118 B TW350118 B TW 350118B TW 086109969 A TW086109969 A TW 086109969A TW 86109969 A TW86109969 A TW 86109969A TW 350118 B TW350118 B TW 350118B
- Authority
- TW
- Taiwan
- Prior art keywords
- film
- over
- teos usg
- forming
- conducting film
- Prior art date
Links
- 239000003990 capacitor Substances 0.000 title abstract 3
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 238000000034 method Methods 0.000 title abstract 2
- UPSOBXZLFLJAKK-UHFFFAOYSA-N ozone;tetraethyl silicate Chemical compound [O-][O+]=O.CCO[Si](OCC)(OCC)OCC UPSOBXZLFLJAKK-UHFFFAOYSA-N 0.000 abstract 5
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 abstract 2
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 abstract 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 238000004381 surface treatment Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
- H01L28/84—Electrodes with an enlarged surface, e.g. formed by texturisation being a rough surface, e.g. using hemispherical grains
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Memories (AREA)
- Semiconductor Integrated Circuits (AREA)
- Formation Of Insulating Films (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019970004671A KR100252211B1 (ko) | 1997-02-17 | 1997-02-17 | 반도체장치의 커패시터 제조방법 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW350118B true TW350118B (en) | 1999-01-11 |
Family
ID=19497172
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW086109969A TW350118B (en) | 1997-02-17 | 1997-07-15 | Method for manufacturing capacitor of semiconductor device |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US6194281B1 (zh) |
| JP (1) | JP2902621B2 (zh) |
| KR (1) | KR100252211B1 (zh) |
| TW (1) | TW350118B (zh) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002289796A (ja) * | 2001-03-26 | 2002-10-04 | Nec Corp | 半導体装置の製造方法 |
| KR100460718B1 (ko) * | 2002-09-06 | 2004-12-08 | 아남반도체 주식회사 | 금속 절연체 금속 캐패시터 제조 방법 |
| KR100460719B1 (ko) * | 2002-09-06 | 2004-12-08 | 아남반도체 주식회사 | 금속 절연체 금속 캐패시터 제조 방법 |
| KR100477807B1 (ko) * | 2002-09-17 | 2005-03-22 | 주식회사 하이닉스반도체 | 캐패시터 및 그의 제조 방법 |
| US6943039B2 (en) * | 2003-02-11 | 2005-09-13 | Applied Materials Inc. | Method of etching ferroelectric layers |
| KR100634509B1 (ko) * | 2004-08-20 | 2006-10-13 | 삼성전자주식회사 | 3차원 반도체 캐패시터 및 그 제조 방법 |
| KR100655755B1 (ko) | 2004-10-04 | 2006-12-11 | 삼성전자주식회사 | 반도체 장치의 제조 방법 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04368172A (ja) * | 1991-06-14 | 1992-12-21 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
| JPH06151749A (ja) * | 1992-11-04 | 1994-05-31 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
| KR970007967B1 (en) * | 1994-05-11 | 1997-05-19 | Hyundai Electronics Ind | Fabrication method and semiconductor device |
| US5688726A (en) * | 1994-08-03 | 1997-11-18 | Hyundai Electronics Industries Co., Ltd. | Method for fabricating capacitors of semiconductor device having cylindrical storage electrodes |
| JP2770789B2 (ja) * | 1995-05-22 | 1998-07-02 | 日本電気株式会社 | 半導体記憶装置の製造方法 |
| US5736450A (en) * | 1997-06-18 | 1998-04-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for forming a cylindrical capacitor |
-
1997
- 1997-02-17 KR KR1019970004671A patent/KR100252211B1/ko not_active IP Right Cessation
- 1997-07-15 TW TW086109969A patent/TW350118B/zh not_active IP Right Cessation
- 1997-10-30 US US08/961,448 patent/US6194281B1/en not_active Expired - Fee Related
-
1998
- 1998-02-17 JP JP10035044A patent/JP2902621B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2902621B2 (ja) | 1999-06-07 |
| KR100252211B1 (ko) | 2000-04-15 |
| US6194281B1 (en) | 2001-02-27 |
| JPH10233494A (ja) | 1998-09-02 |
| KR19980068183A (ko) | 1998-10-15 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |