TW346674B - Non-breakdown triggered electrostatic discharge protection circuit for an integrated circuit and method therefor - Google Patents
Non-breakdown triggered electrostatic discharge protection circuit for an integrated circuit and method thereforInfo
- Publication number
- TW346674B TW346674B TW086111478A TW86111478A TW346674B TW 346674 B TW346674 B TW 346674B TW 086111478 A TW086111478 A TW 086111478A TW 86111478 A TW86111478 A TW 86111478A TW 346674 B TW346674 B TW 346674B
- Authority
- TW
- Taiwan
- Prior art keywords
- terminal
- coupled
- capacitor
- electrostatic discharge
- pad
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/706,868 US5781388A (en) | 1996-09-03 | 1996-09-03 | Non-breakdown triggered electrostatic discharge protection circuit for an integrated circuit and method therefor |
Publications (1)
Publication Number | Publication Date |
---|---|
TW346674B true TW346674B (en) | 1998-12-01 |
Family
ID=24839403
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW086111478A TW346674B (en) | 1996-09-03 | 1997-08-11 | Non-breakdown triggered electrostatic discharge protection circuit for an integrated circuit and method therefor |
Country Status (6)
Country | Link |
---|---|
US (2) | US5781388A (zh) |
EP (1) | EP0827252A3 (zh) |
JP (1) | JPH10134988A (zh) |
KR (1) | KR19980024304A (zh) |
CN (1) | CN1175795A (zh) |
TW (1) | TW346674B (zh) |
Families Citing this family (62)
Publication number | Priority date | Publication date | Assignee | Title |
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EP0851552A1 (en) * | 1996-12-31 | 1998-07-01 | STMicroelectronics S.r.l. | Protection ciruit for an electric supply line in a semiconductor integrated device |
US6313509B1 (en) * | 1997-04-04 | 2001-11-06 | Nippon Steel Corporation | Semiconductor device and a MOS transistor for circuit protection |
US6046894A (en) * | 1998-03-02 | 2000-04-04 | Motorola, Inc. | Semiconductor protection circuit and method |
US6034552A (en) * | 1998-04-30 | 2000-03-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Output ESD protection using dynamic-floating-gate arrangement |
WO2000019573A1 (de) | 1998-09-25 | 2000-04-06 | Infineon Technologies Ag | Schutzschaltung auf einer integrierten schaltung |
KR100518526B1 (ko) * | 1999-02-25 | 2005-10-04 | 삼성전자주식회사 | 사이리스터의 트리거 전류를 이용한 정전하 방전회로 |
JP4617527B2 (ja) | 1999-04-08 | 2011-01-26 | 株式会社デンソー | 回路装置 |
US6245610B1 (en) * | 1999-09-28 | 2001-06-12 | United Microelectronics Corp. | Method of protecting a well at a floating stage |
US6442008B1 (en) * | 1999-11-29 | 2002-08-27 | Compaq Information Technologies Group, L.P. | Low leakage clamp for E.S.D. protection |
TW457688B (en) * | 1999-12-20 | 2001-10-01 | Winbond Electronics Corp | Input/output port with high voltage tolerance |
JP4573963B2 (ja) * | 2000-08-08 | 2010-11-04 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
US6493199B1 (en) * | 2000-10-26 | 2002-12-10 | Winbond Electronics Corporation | Vertical zener-triggered SCR structure for ESD protection in integrated circuits |
TW479342B (en) * | 2001-01-05 | 2002-03-11 | Macronix Int Co Ltd | Electrostatic discharge protection circuit of input/output pad |
US7589944B2 (en) * | 2001-03-16 | 2009-09-15 | Sofics Bvba | Electrostatic discharge protection structures for high speed technologies with mixed and ultra-low voltage supplies |
WO2002075891A1 (en) | 2001-03-16 | 2002-09-26 | Sarnoff Corporation | Electrostatic discharge protection structures for high speed technologies with mixed and ultra-low voltage supplies |
JP4005920B2 (ja) | 2001-03-16 | 2007-11-14 | サーノフ コーポレーション | ラッチアップ耐性のための高保持電流を有する静電放電保護構造 |
US6437961B1 (en) | 2001-03-30 | 2002-08-20 | Koninklijke Philips Electronics N.V. | Electrostatic discharge circuit having power-up and power-down protection |
US6573566B2 (en) * | 2001-07-09 | 2003-06-03 | United Microelectronics Corp. | Low-voltage-triggered SOI-SCR device and associated ESD protection circuit |
US6590261B2 (en) * | 2001-10-10 | 2003-07-08 | Macronix International Co., Ltd. | Electrostatic discharge protection structure |
TW511271B (en) | 2001-10-19 | 2002-11-21 | Winbond Electronics Corp | Electrostatic discharge protection circuit with high electrostatic discharge tolerance capability |
CN100401512C (zh) * | 2002-03-26 | 2008-07-09 | 华邦电子股份有限公司 | 利用硅控整流器的静电放电保护电路 |
US6734504B1 (en) | 2002-04-05 | 2004-05-11 | Cypress Semiconductor Corp. | Method of providing HBM protection with a decoupled HBM structure |
US7291887B2 (en) * | 2002-06-19 | 2007-11-06 | Windbond Electronics Corp. | Protection circuit for electrostatic discharge |
US6714061B2 (en) * | 2002-07-17 | 2004-03-30 | Intel Corporation | Semiconductor controlled rectifier / semiconductor controlled switch based ESD power supply clamp with active bias timer circuitry |
KR100861193B1 (ko) * | 2002-07-18 | 2008-09-30 | 주식회사 하이닉스반도체 | 정전기 방전 보호 회로 |
US6822295B2 (en) * | 2002-07-30 | 2004-11-23 | Honeywell International Inc. | Overvoltage protection device using pin diodes |
AU2003267103A1 (en) * | 2002-09-11 | 2004-04-30 | Pan Jit Americas, Inc | Electrostatic discharge protection device for high speed transmission lines |
US7847317B2 (en) * | 2002-12-31 | 2010-12-07 | Intel Corporation | Low-capacitance electrostatic discharge protection diodes |
KR100941435B1 (ko) * | 2003-01-13 | 2010-02-11 | 엘지이노텍 주식회사 | 배터리 관리용 아이씨의 정전기 방전에 대한 오동작 방지 회로 |
JP3773506B2 (ja) * | 2003-07-24 | 2006-05-10 | 松下電器産業株式会社 | 半導体集積回路装置 |
DE10348446B4 (de) * | 2003-10-14 | 2011-12-15 | Zentrum Mikroelektronik Dresden Ag | Anordnung für eine ESD-Schutzschaltung |
US7245466B2 (en) * | 2003-10-21 | 2007-07-17 | Texas Instruments Incorporated | Pumped SCR for ESD protection |
DE502005009563D1 (de) * | 2004-02-13 | 2010-06-24 | Austriamicrosystems Ag | Schaltungsanordnung und Verfahren zum Schutz einer integrierten Halbleiterschaltung |
DE102004007241A1 (de) * | 2004-02-13 | 2005-09-01 | Austriamicrosystems Ag | Schaltungsanordnung und Verfahren zum Schutz einer integrierten Halbleiterschaltung |
JP2005235947A (ja) * | 2004-02-18 | 2005-09-02 | Fujitsu Ltd | 静電気放電保護回路 |
JP4978998B2 (ja) * | 2004-03-12 | 2012-07-18 | ローム株式会社 | 半導体装置 |
CN1317763C (zh) * | 2004-05-13 | 2007-05-23 | 威盛电子股份有限公司 | 静电放电保护电路 |
US20050275029A1 (en) * | 2004-06-15 | 2005-12-15 | Jeffrey Watt | Fast turn-on and low-capacitance SCR ESD protection |
US7042028B1 (en) * | 2005-03-14 | 2006-05-09 | System General Corp. | Electrostatic discharge device |
JP2008251755A (ja) * | 2007-03-30 | 2008-10-16 | Eudyna Devices Inc | 半導体装置 |
US7638857B2 (en) * | 2008-05-07 | 2009-12-29 | United Microelectronics Corp. | Structure of silicon controlled rectifier |
GB2464771B (en) * | 2008-10-31 | 2013-11-20 | Cambridge Silicon Radio Ltd | Low voltage protection |
KR101006097B1 (ko) * | 2008-11-10 | 2011-01-07 | 주식회사 하이닉스반도체 | 정전기 보호회로 |
CN101656239B (zh) * | 2009-07-22 | 2011-06-15 | 上海宏力半导体制造有限公司 | 一种降低寄生电容的键合焊盘及其制备方法 |
EP2580779A1 (en) * | 2010-06-09 | 2013-04-17 | Analog Devices, Inc. | Apparatus and metho for protecting electronic circuits |
US8970239B2 (en) | 2010-09-27 | 2015-03-03 | International Business Machines Corporation | Methods and systems for detecting ESD events in cabled devices |
US20120236447A1 (en) * | 2011-03-14 | 2012-09-20 | Mack Michael P | Input-output esd protection |
US8354722B2 (en) | 2011-05-31 | 2013-01-15 | International Business Machines Corporation | SCR/MOS clamp for ESD protection of integrated circuits |
US8610183B2 (en) * | 2011-08-04 | 2013-12-17 | Texas Instruments Incorporated | Field controlled diode with positively biased gate |
US8724272B2 (en) * | 2012-04-24 | 2014-05-13 | Globalfoundries Singapore Pte. Ltd. | ESD protection device with a tunable holding voltage for a high voltage programming pad |
US9130010B2 (en) * | 2012-05-30 | 2015-09-08 | Globalfoundries Singapore Pte. Ltd. | Latch-up robust SCR-based devices |
CN103715677B (zh) * | 2012-10-09 | 2016-08-03 | 旺宏电子股份有限公司 | 静电放电保护装置 |
JP2014132717A (ja) | 2013-01-07 | 2014-07-17 | Seiko Epson Corp | 静電気放電保護回路及び半導体回路装置 |
US10006942B2 (en) * | 2013-05-13 | 2018-06-26 | Intel IP Corporation | Board, integrated circuit testing arrangement, and method for operating an integrated circuit |
JP2014241537A (ja) | 2013-06-12 | 2014-12-25 | 株式会社東芝 | 静電気保護回路 |
CN108615728B (zh) * | 2016-12-12 | 2021-08-03 | 中国航空工业集团公司西安航空计算技术研究所 | 芯片内高压雷击防护电路 |
CN106786463A (zh) * | 2017-01-04 | 2017-05-31 | 上海华虹宏力半导体制造有限公司 | 高压esd保护触发电路 |
TWI661530B (zh) * | 2018-02-13 | 2019-06-01 | 力晶積成電子製造股份有限公司 | 靜電放電保護元件 |
CN108305860B (zh) * | 2018-03-20 | 2022-09-16 | 珠海市杰理科技股份有限公司 | 兼容交流耦合电容的射频电路引脚 |
FR3080948A1 (fr) * | 2018-05-02 | 2019-11-08 | Stmicroelectronics (Rousset) Sas | Circuit integre comprenant un element capacitif, et procede de fabrication |
WO2020051832A1 (zh) * | 2018-09-13 | 2020-03-19 | 深圳市汇顶科技股份有限公司 | 静电泄放保护电路及集成电路芯片 |
CN115642153A (zh) * | 2021-07-19 | 2023-01-24 | 长鑫存储技术有限公司 | 静电保护电路及芯片 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4400711A (en) * | 1981-03-31 | 1983-08-23 | Rca Corporation | Integrated circuit protection device |
JP3375659B2 (ja) * | 1991-03-28 | 2003-02-10 | テキサス インスツルメンツ インコーポレイテツド | 静電放電保護回路の形成方法 |
US5225702A (en) * | 1991-12-05 | 1993-07-06 | Texas Instruments Incorporated | Silicon controlled rectifier structure for electrostatic discharge protection |
US5272097A (en) * | 1992-04-07 | 1993-12-21 | Philip Shiota | Method for fabricating diodes for electrostatic discharge protection and voltage references |
US5400202A (en) * | 1992-06-15 | 1995-03-21 | Hewlett-Packard Company | Electrostatic discharge protection circuit for integrated circuits |
US5610425A (en) | 1995-02-06 | 1997-03-11 | Motorola, Inc. | Input/output electrostatic discharge protection circuit for an integrated circuit |
US5528188A (en) * | 1995-03-13 | 1996-06-18 | International Business Machines Corporation | Electrostatic discharge suppression circuit employing low-voltage triggering silicon-controlled rectifier |
US5708288A (en) * | 1995-11-02 | 1998-01-13 | Motorola, Inc. | Thin film silicon on insulator semiconductor integrated circuit with electrostatic damage protection and method |
-
1996
- 1996-09-03 US US08/706,868 patent/US5781388A/en not_active Expired - Fee Related
-
1997
- 1997-08-11 TW TW086111478A patent/TW346674B/zh not_active IP Right Cessation
- 1997-08-11 EP EP97113871A patent/EP0827252A3/en not_active Withdrawn
- 1997-09-02 CN CN97116860A patent/CN1175795A/zh active Pending
- 1997-09-02 JP JP9252715A patent/JPH10134988A/ja active Pending
- 1997-09-03 KR KR1019970045632A patent/KR19980024304A/ko not_active Application Discontinuation
-
1998
- 1998-02-02 US US09/017,139 patent/US6177298B1/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JPH10134988A (ja) | 1998-05-22 |
EP0827252A2 (en) | 1998-03-04 |
KR19980024304A (ko) | 1998-07-06 |
EP0827252A3 (en) | 1999-06-16 |
CN1175795A (zh) | 1998-03-11 |
US6177298B1 (en) | 2001-01-23 |
US5781388A (en) | 1998-07-14 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |