TW345746B - Upper gate type thin film transistor and process for producing the same - Google Patents
Upper gate type thin film transistor and process for producing the sameInfo
- Publication number
- TW345746B TW345746B TW084107846A TW84107846A TW345746B TW 345746 B TW345746 B TW 345746B TW 084107846 A TW084107846 A TW 084107846A TW 84107846 A TW84107846 A TW 84107846A TW 345746 B TW345746 B TW 345746B
- Authority
- TW
- Taiwan
- Prior art keywords
- semiconductor layer
- electrode
- gate
- thin film
- gate electrode
- Prior art date
Links
- 239000010409 thin film Substances 0.000 title abstract 3
- 239000010410 layer Substances 0.000 abstract 7
- 239000004065 semiconductor Substances 0.000 abstract 7
- 239000002019 doping agent Substances 0.000 abstract 4
- 239000000470 constituent Substances 0.000 abstract 2
- 239000010408 film Substances 0.000 abstract 2
- 238000009832 plasma treatment Methods 0.000 abstract 2
- 239000002344 surface layer Substances 0.000 abstract 2
- 238000009792 diffusion process Methods 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 229920005591 polysilicon Polymers 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15701394 | 1994-07-08 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW345746B true TW345746B (en) | 1998-11-21 |
Family
ID=15640278
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW084107846A TW345746B (en) | 1994-07-08 | 1995-07-28 | Upper gate type thin film transistor and process for producing the same |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US5614729A (zh) |
| EP (1) | EP0691688B1 (zh) |
| KR (1) | KR100222193B1 (zh) |
| DE (1) | DE69505461T2 (zh) |
| TW (1) | TW345746B (zh) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW367564B (en) * | 1995-09-25 | 1999-08-21 | Toshiba Corp | Forming method for polycrystalline silicon, thin film transistor containing the polycrystalline silicon and manufacturing method thereof, and the liquid crystal display containing the thin film transistor |
| US5920772A (en) * | 1997-06-27 | 1999-07-06 | Industrial Technology Research Institute | Method of fabricating a hybrid polysilicon/amorphous silicon TFT |
| DE69839005T2 (de) * | 1997-10-29 | 2009-01-08 | Xerox Corp., Rochester | Verfahren zur Herstellung eines Dünnschicht-Feldeffekttransistors |
| KR100317641B1 (ko) * | 1999-05-21 | 2001-12-22 | 구본준, 론 위라하디락사 | 박막 트랜지스터 및 그 제조방법 |
| GB9927287D0 (en) * | 1999-11-19 | 2000-01-12 | Koninkl Philips Electronics Nv | Top gate thin film transistor and method of producing the same |
| JP2001177097A (ja) * | 1999-12-10 | 2001-06-29 | Koninkl Philips Electronics Nv | 薄膜トランジスタ及びその製造方法 |
| GB9929615D0 (en) * | 1999-12-15 | 2000-02-09 | Koninkl Philips Electronics Nv | Method of manufacturing an active matrix device |
| GB0000292D0 (en) * | 2000-01-07 | 2000-03-01 | Koninkl Philips Electronics Nv | Top gate thin-film transistor and method of producing the same |
| US6300208B1 (en) | 2000-02-16 | 2001-10-09 | Ultratech Stepper, Inc. | Methods for annealing an integrated device using a radiant energy absorber layer |
| US6614054B1 (en) * | 2000-11-27 | 2003-09-02 | Lg.Philips Lcd Co., Ltd. | Polysilicon thin film transistor used in a liquid crystal display and the fabricating method |
| US6746230B2 (en) * | 2001-05-08 | 2004-06-08 | Wellman, Inc. | Apparatus for high denier hollow spiral fiber |
| JP2003168802A (ja) * | 2001-11-30 | 2003-06-13 | Toshiba Corp | 半導体装置及びその製造方法 |
| US7531294B2 (en) * | 2004-03-25 | 2009-05-12 | Semiconductor Energy Laboratory Co., Ltd. | Method for forming film pattern, method for manufacturing semiconductor device, liquid crystal television, and EL television |
| US7977151B2 (en) * | 2009-04-21 | 2011-07-12 | Cbrite Inc. | Double self-aligned metal oxide TFT |
| GB2489682B (en) | 2011-03-30 | 2015-11-04 | Pragmatic Printing Ltd | Electronic device and its method of manufacture |
| KR101806405B1 (ko) | 2011-06-29 | 2017-12-08 | 삼성디스플레이 주식회사 | 평판 표시 장치용 백 플레인, 이를 포함하는 평판 표시 장치, 및 그 제조 방법 |
| KR102652370B1 (ko) | 2017-02-15 | 2024-03-27 | 삼성전자주식회사 | 박막 트랜지스터, 그 제조 방법, 및 박막 트랜지스터를 포함하는 전자 기기 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4727044A (en) * | 1984-05-18 | 1988-02-23 | Semiconductor Energy Laboratory Co., Ltd. | Method of making a thin film transistor with laser recrystallized source and drain |
| JPS61138285A (ja) * | 1984-12-10 | 1986-06-25 | ホシデン株式会社 | 液晶表示素子 |
| JPH0227320A (ja) * | 1988-07-18 | 1990-01-30 | Hitachi Ltd | 薄膜半導体表示装置とその製造方法 |
| JPH02234440A (ja) * | 1989-03-08 | 1990-09-17 | Seiko Epson Corp | 薄膜半導体装置の製造方法 |
| JP3122699B2 (ja) * | 1992-08-27 | 2001-01-09 | 株式会社半導体エネルギー研究所 | 薄膜状半導体装置の作製方法。 |
| US5275851A (en) * | 1993-03-03 | 1994-01-04 | The Penn State Research Foundation | Low temperature crystallization and patterning of amorphous silicon films on electrically insulating substrates |
-
1995
- 1995-06-27 US US08/495,031 patent/US5614729A/en not_active Expired - Fee Related
- 1995-07-05 DE DE69505461T patent/DE69505461T2/de not_active Expired - Fee Related
- 1995-07-05 EP EP95110492A patent/EP0691688B1/en not_active Expired - Lifetime
- 1995-07-08 KR KR1019950020096A patent/KR100222193B1/ko not_active IP Right Cessation
- 1995-07-28 TW TW084107846A patent/TW345746B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| US5614729A (en) | 1997-03-25 |
| KR100222193B1 (ko) | 1999-10-01 |
| EP0691688A2 (en) | 1996-01-10 |
| EP0691688A3 (en) | 1997-03-26 |
| DE69505461D1 (de) | 1998-11-26 |
| DE69505461T2 (de) | 1999-04-29 |
| EP0691688B1 (en) | 1998-10-21 |
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