TW337555B - Opto-electronic converter and its production method - Google Patents
Opto-electronic converter and its production methodInfo
- Publication number
- TW337555B TW337555B TW085107987A TW85107987A TW337555B TW 337555 B TW337555 B TW 337555B TW 085107987 A TW085107987 A TW 085107987A TW 85107987 A TW85107987 A TW 85107987A TW 337555 B TW337555 B TW 337555B
- Authority
- TW
- Taiwan
- Prior art keywords
- carrier
- plate
- opto
- electronic converter
- production method
- Prior art date
Links
- 230000005693 optoelectronics Effects 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000002184 metal Substances 0.000 abstract 3
- 230000005540 biological transmission Effects 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02325—Optical elements or arrangements associated with the device the optical elements not being integrated nor being directly associated with the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01068—Erbium [Er]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19527026A DE19527026C2 (de) | 1995-07-24 | 1995-07-24 | Optoelektronischer Wandler und Herstellverfahren |
Publications (1)
Publication Number | Publication Date |
---|---|
TW337555B true TW337555B (en) | 1998-08-01 |
Family
ID=7767658
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW085107987A TW337555B (en) | 1995-07-24 | 1996-07-02 | Opto-electronic converter and its production method |
Country Status (6)
Country | Link |
---|---|
EP (1) | EP0842543B1 (zh) |
JP (1) | JP3386817B2 (zh) |
KR (1) | KR19990035849A (zh) |
DE (2) | DE19527026C2 (zh) |
TW (1) | TW337555B (zh) |
WO (1) | WO1997004491A1 (zh) |
Families Citing this family (51)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5990498A (en) * | 1997-09-16 | 1999-11-23 | Polaroid Corporation | Light-emitting diode having uniform irradiance distribution |
FI105606B (fi) | 1997-10-13 | 2000-09-15 | Nokia Mobile Phones Ltd | Optinen tiedonsiirtoyksikkö |
US6588949B1 (en) | 1998-12-30 | 2003-07-08 | Honeywell Inc. | Method and apparatus for hermetically sealing photonic devices |
US7004644B1 (en) * | 1999-06-29 | 2006-02-28 | Finisar Corporation | Hermetic chip-scale package for photonic devices |
DE19935496C1 (de) * | 1999-07-28 | 2001-01-18 | Siemens Ag | Optoelektronisches Bauelement und Verfahren zur Herstellung |
DE19952712A1 (de) * | 1999-11-02 | 2001-05-10 | Osram Opto Semiconductors Gmbh | Laserdiodenvorrichtung |
US6792178B1 (en) | 2000-01-12 | 2004-09-14 | Finisar Corporation | Fiber optic header with integrated power monitor |
DE10034865B4 (de) * | 2000-07-18 | 2006-06-01 | Infineon Technologies Ag | Optoelektronisches oberflächenmontierbares Modul |
JP2002141556A (ja) | 2000-09-12 | 2002-05-17 | Lumileds Lighting Us Llc | 改良された光抽出効果を有する発光ダイオード |
US7064355B2 (en) * | 2000-09-12 | 2006-06-20 | Lumileds Lighting U.S., Llc | Light emitting diodes with improved light extraction efficiency |
US7053419B1 (en) * | 2000-09-12 | 2006-05-30 | Lumileds Lighting U.S., Llc | Light emitting diodes with improved light extraction efficiency |
JP2002151781A (ja) | 2000-11-10 | 2002-05-24 | Mitsubishi Electric Corp | 光素子モジュール |
DE10101554A1 (de) * | 2001-01-15 | 2002-08-01 | Osram Opto Semiconductors Gmbh | Lumineszenzdiode |
DE10104715B4 (de) * | 2001-02-02 | 2006-04-13 | Osram Opto Semiconductors Gmbh | Optisches Bauelement |
DE10111501B4 (de) | 2001-03-09 | 2019-03-21 | Osram Opto Semiconductors Gmbh | Strahlungsemittierendes Halbleiterbauelement und Verfahren zu dessen Herstellung |
WO2002084358A1 (de) | 2001-04-18 | 2002-10-24 | Infineon Technologies Ag | Sendemodul für eine optische signalübertragung |
DE10122134A1 (de) * | 2001-05-08 | 2002-12-05 | Sick Ag | Optischer Sensor |
FR2824955B1 (fr) * | 2001-05-18 | 2004-07-09 | St Microelectronics Sa | Boitier semi-conducteur optique blinde |
KR100439399B1 (ko) * | 2001-07-19 | 2004-07-09 | 삼성전기주식회사 | 광픽업장치를 위한 포토다이오드 패키지 및 그 제조방법 |
DE10150986A1 (de) * | 2001-10-10 | 2003-04-30 | Infineon Technologies Ag | Sende- und/oder Empfangseinrichtung |
DE10201102A1 (de) | 2002-01-09 | 2003-07-24 | Infineon Technologies Ag | Laservorrichtung |
JP2004086157A (ja) * | 2002-07-01 | 2004-03-18 | Seiko Epson Corp | 光トランシーバ及びその製造方法 |
JP2004086137A (ja) | 2002-07-01 | 2004-03-18 | Seiko Epson Corp | 光トランシーバ及びその製造方法 |
JP2004086136A (ja) | 2002-07-01 | 2004-03-18 | Seiko Epson Corp | 光トランシーバの製造方法及び調整装置 |
JP4152684B2 (ja) * | 2002-07-17 | 2008-09-17 | 松下電器産業株式会社 | 受光モジュールとその製造方法 |
DE10236376A1 (de) | 2002-08-02 | 2004-02-26 | Infineon Technologies Ag | Träger für optoelektronische Bauelemente sowie optische Sendeeinrichtung und optische Empfangseinrichtung |
JP2004158557A (ja) * | 2002-11-05 | 2004-06-03 | Shurai Kagi Kofun Yugenkoshi | 類似フリップチップ型の発光ダイオード装置パッケージ |
EP1420462A1 (en) * | 2002-11-13 | 2004-05-19 | Heptagon Oy | Light emitting device |
US6969204B2 (en) | 2002-11-26 | 2005-11-29 | Hymite A/S | Optical package with an integrated lens and optical assemblies incorporating the package |
DE10308890A1 (de) * | 2003-02-28 | 2004-09-09 | Opto Tech Corporation | Gehäusestruktur für eine Lichtemissionsdiode und Verfahren zu dessen Herstellung |
DE10351349A1 (de) * | 2003-10-31 | 2005-06-16 | Osram Opto Semiconductors Gmbh | Verfahren zum Hestellen eines Lumineszenzdiodenchips |
DE10351397A1 (de) * | 2003-10-31 | 2005-06-16 | Osram Opto Semiconductors Gmbh | Lumineszenzdiodenchip |
JP2005159296A (ja) * | 2003-11-06 | 2005-06-16 | Sharp Corp | オプトデバイスのパッケージ構造 |
JP4540382B2 (ja) * | 2004-04-05 | 2010-09-08 | Hoya株式会社 | 撮影用照明装置 |
DE102005006052A1 (de) | 2004-12-21 | 2006-07-06 | Osram Opto Semiconductors Gmbh | Linse, Laseranordnung und Verfahren zur Herstellung einer Laseranordnung |
DE102005008885B4 (de) * | 2005-02-26 | 2008-11-27 | Sick Ag | Lichtgitter |
CN101248535B (zh) | 2005-08-24 | 2011-09-07 | 皇家飞利浦电子股份有限公司 | 带有彩色变换器的发光二极管和激光器的电接触系统 |
US7525126B2 (en) | 2006-05-02 | 2009-04-28 | 3M Innovative Properties Company | LED package with converging optical element |
US20070258241A1 (en) * | 2006-05-02 | 2007-11-08 | 3M Innovative Properties Company | Led package with non-bonded converging optical element |
DE102008005345A1 (de) * | 2007-09-28 | 2009-04-02 | Osram Opto Semiconductors Gmbh | Halbleiterbasiertes Bauelement, Aufnahme für ein halbleiterbasiertes Bauelement und Verfahren zur Herstellung eines halbleiterbasierten Bauelements |
DE102007062042A1 (de) * | 2007-12-21 | 2009-06-25 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauteil, Verkapselung für ein optoelektronisches Bauteil und Herstellungsverfahren |
DE102009005709A1 (de) * | 2009-01-22 | 2010-07-29 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauteil und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils |
DE102010032512A1 (de) * | 2010-07-28 | 2012-02-02 | Osram Opto Semiconductors Gmbh | Licht emittierendes Halbleiterbauelement und Verfahren zur Herstellung eines Licht emittierenden Halbleiterbauelements |
JP6137839B2 (ja) * | 2013-01-15 | 2017-05-31 | 三菱電機株式会社 | 受信光学系 |
DE102016100563B4 (de) * | 2016-01-14 | 2021-08-05 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zum Herstellen einer optoelektronischen Leuchtvorrichtung und optoelektronische Leuchtvorrichtung |
JP2018182172A (ja) * | 2017-04-18 | 2018-11-15 | 日本電信電話株式会社 | 受光素子およびその作製方法 |
DE102017112235A1 (de) | 2017-06-02 | 2018-12-06 | Osram Opto Semiconductors Gmbh | Laserdiode und Verfahren zum Herstellen einer Laserdiode |
JP6850212B2 (ja) * | 2017-07-04 | 2021-03-31 | 日本電信電話株式会社 | 受光素子の製造方法 |
FR3070793B1 (fr) * | 2017-09-05 | 2022-07-22 | Commissariat Energie Atomique | Procede de fabrication d'un dispositif d'affichage emissif a led |
DE102017126109A1 (de) * | 2017-11-08 | 2019-05-09 | Osram Opto Semiconductors Gmbh | Licht emittierendes Bauelement und Verfahren zur Herstellung eines Licht emittierenden Bauelements |
JP7003818B2 (ja) * | 2018-04-05 | 2022-02-04 | 日本電信電話株式会社 | 受光素子および素子の製造方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60153184A (ja) * | 1984-01-21 | 1985-08-12 | Sumitomo Electric Ind Ltd | 受光素子 |
DE3925189C1 (en) * | 1989-07-29 | 1990-12-13 | Messerschmitt-Boelkow-Blohm Gmbh, 8012 Ottobrunn, De | Optical transmission detector using optical fibre and PIN-diode - is mounted in V-shaped trench of crystalline silicon chip with vaporised counter-electrode and integrated receiving electronics |
EP0412184B1 (de) * | 1989-08-09 | 1995-06-21 | Siemens Aktiengesellschaft | Optoelektronischer Wandler mit einer Linsenkoppeloptik |
US5149958A (en) * | 1990-12-12 | 1992-09-22 | Eastman Kodak Company | Optoelectronic device component package |
JPH0555703A (ja) * | 1991-05-15 | 1993-03-05 | Fujitsu Ltd | 面発光レーザ装置 |
DE4313486C2 (de) * | 1992-11-25 | 1994-09-01 | Ant Nachrichtentech | Anordnung zur Ankopplung eines Lichtwellenleiters an mindestens ein lichtaussendendes oder -empfangendes Element |
DE4323681A1 (de) * | 1993-07-15 | 1995-01-19 | Bosch Gmbh Robert | Anordnung zur Ankopplung wenigstens einer Lichtleitfaser an wenigstens ein optisches Empfangs- oder Sendeelement und ein Verfahren zur Herstellung der Anordnung |
DE4416563C1 (de) * | 1994-05-11 | 1995-07-20 | Ant Nachrichtentech | Anordnung zur Ankopplung von optoelektronischen Komponenten und Lichtwellenleitern aneinander |
-
1995
- 1995-07-24 DE DE19527026A patent/DE19527026C2/de not_active Expired - Lifetime
-
1996
- 1996-07-02 TW TW085107987A patent/TW337555B/zh active
- 1996-07-18 DE DE59608735T patent/DE59608735D1/de not_active Expired - Fee Related
- 1996-07-18 WO PCT/DE1996/001316 patent/WO1997004491A1/de not_active Application Discontinuation
- 1996-07-18 JP JP50616497A patent/JP3386817B2/ja not_active Expired - Lifetime
- 1996-07-18 EP EP96923865A patent/EP0842543B1/de not_active Expired - Lifetime
- 1996-07-18 KR KR1019980700509A patent/KR19990035849A/ko not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
WO1997004491A1 (de) | 1997-02-06 |
JPH11509687A (ja) | 1999-08-24 |
EP0842543A1 (de) | 1998-05-20 |
DE19527026C2 (de) | 1997-12-18 |
JP3386817B2 (ja) | 2003-03-17 |
EP0842543B1 (de) | 2002-02-13 |
DE59608735D1 (de) | 2002-03-21 |
KR19990035849A (ko) | 1999-05-25 |
DE19527026A1 (de) | 1997-02-06 |
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