TW335554B - Semiconductor component with compensation implantation and method for production - Google Patents
Semiconductor component with compensation implantation and method for productionInfo
- Publication number
- TW335554B TW335554B TW086106476A TW86106476A TW335554B TW 335554 B TW335554 B TW 335554B TW 086106476 A TW086106476 A TW 086106476A TW 86106476 A TW86106476 A TW 86106476A TW 335554 B TW335554 B TW 335554B
- Authority
- TW
- Taiwan
- Prior art keywords
- dopant
- region
- dielectric
- semiconductor component
- production
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 238000002513 implantation Methods 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000002019 doping agent Substances 0.000 abstract 8
- 230000000149 penetrating effect Effects 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 2
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66825—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a floating gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
- H01L29/7883—Programmable transistors with only two possible levels of programmation charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19620032A DE19620032C2 (de) | 1996-05-17 | 1996-05-17 | Halbleiterbauelement mit Kompensationsimplantation und Herstellverfahren |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW335554B true TW335554B (en) | 1998-07-01 |
Family
ID=7794642
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW086106476A TW335554B (en) | 1996-05-17 | 1997-05-15 | Semiconductor component with compensation implantation and method for production |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US5981342A (zh) |
| EP (1) | EP0810673B1 (zh) |
| JP (1) | JPH1056090A (zh) |
| KR (1) | KR970077399A (zh) |
| DE (2) | DE19620032C2 (zh) |
| TW (1) | TW335554B (zh) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6127222A (en) * | 1997-12-16 | 2000-10-03 | Advanced Micro Devices, Inc. | Non-self-aligned side channel implants for flash memory cells |
| JP3000524B2 (ja) * | 1998-01-30 | 2000-01-17 | セイコーインスツルメンツ株式会社 | 半導体装置の製造方法 |
| US5973354A (en) * | 1998-03-30 | 1999-10-26 | Worldwide Semiconductor Manufacturing Corporation | Single polycylindrical flash memory cell having high coupling ratio |
| KR100311971B1 (ko) * | 1998-12-23 | 2001-12-28 | 윤종용 | 비휘발성메모리반도체소자제조방법 |
| JP2001210730A (ja) * | 2000-01-25 | 2001-08-03 | Oki Electric Ind Co Ltd | 不揮発性半導体記憶装置の製造方法 |
| JP4809545B2 (ja) * | 2001-05-31 | 2011-11-09 | 株式会社半導体エネルギー研究所 | 半導体不揮発性メモリ及び電子機器 |
| KR100471187B1 (ko) * | 2003-01-24 | 2005-03-10 | 삼성전자주식회사 | 이이피롬 셀 및 그 제조방법 |
| KR100572327B1 (ko) * | 2004-07-06 | 2006-04-18 | 삼성전자주식회사 | 불휘발성 메모리 소자의 터널링 절연막을 형성하는 방법 |
| KR100618843B1 (ko) | 2004-07-12 | 2006-09-01 | 삼성전자주식회사 | 비휘발성 반도체 메모리 소자 및 그 제조방법 |
| KR100674943B1 (ko) | 2005-01-15 | 2007-01-26 | 삼성전자주식회사 | Ｓｂ，Ｇａ 또는 Ｂｉ가 도핑된 반도체 메모리 소자 및 그제조 방법 |
| KR100731058B1 (ko) * | 2005-12-26 | 2007-06-22 | 동부일렉트로닉스 주식회사 | 이중 터널 산화막을 포함하는 플래시 메모리 셀 및 그 제조방법 |
| KR101024638B1 (ko) * | 2008-08-05 | 2011-03-25 | 매그나칩 반도체 유한회사 | 반도체 소자의 제조방법 |
| JP2012069822A (ja) * | 2010-09-24 | 2012-04-05 | Seiko Instruments Inc | 半導体不揮発性メモリ装置 |
| JP5838078B2 (ja) * | 2010-12-21 | 2015-12-24 | セイコーインスツル株式会社 | 半導体不揮発性メモリ装置 |
| JP5839958B2 (ja) * | 2010-12-29 | 2016-01-06 | セイコーインスツル株式会社 | 半導体不揮発性メモリ装置 |
| US20230197454A1 (en) * | 2021-04-09 | 2023-06-22 | The Government Of The United States Of America, As Represented By The Secretary Of The Navy | WBG and UWBG Semiconductor with P- and N-type Conductivity and Process For Making the Same |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3576245D1 (de) * | 1984-05-17 | 1990-04-05 | Toshiba Kawasaki Kk | Verfahren zur herstellung eines nichtfluechtigen halbleiter-eeprom-elementes. |
| IT1213218B (it) * | 1984-09-25 | 1989-12-14 | Ates Componenti Elettron | Processo per la fabbricazione di una cella di memoria non volatile con area di ossido sottile di dimensioni molto piccole, e cella ottenuta con il processo suddetto. |
| JPS6399573A (ja) * | 1986-10-16 | 1988-04-30 | Sony Corp | メモリ装置 |
| ES2103262T3 (es) * | 1989-04-24 | 1997-09-16 | Siemens Ag | Procedimiento de fotoestructuracion. |
| US5063423A (en) * | 1989-04-28 | 1991-11-05 | Nippondenso Co., Ltd. | Semiconductor memory device of a floating gate tunnel oxide type |
| US5273923A (en) * | 1991-10-09 | 1993-12-28 | Motorola, Inc. | Process for fabricating an EEPROM cell having a tunnel opening which overlaps field isolation regions |
| US5585293A (en) * | 1994-06-03 | 1996-12-17 | Motorola Inc. | Fabrication process for a 1-transistor EEPROM memory device capable of low-voltage operation |
| JP4070249B2 (ja) * | 1994-11-22 | 2008-04-02 | 株式会社ルネサステクノロジ | 半導体集積回路装置の製造方法 |
| US5501996A (en) * | 1994-12-14 | 1996-03-26 | United Microelectronics Corporation | Method of manufacture of high coupling ratio single polysilicon floating gate EPROM or EEPROM cell |
-
1996
- 1996-05-17 DE DE19620032A patent/DE19620032C2/de not_active Expired - Fee Related
-
1997
- 1997-05-06 DE DE59702271T patent/DE59702271D1/de not_active Expired - Fee Related
- 1997-05-06 EP EP97107463A patent/EP0810673B1/de not_active Expired - Lifetime
- 1997-05-14 JP JP9139411A patent/JPH1056090A/ja active Pending
- 1997-05-15 TW TW086106476A patent/TW335554B/zh active
- 1997-05-16 KR KR1019970018853A patent/KR970077399A/ko not_active Application Discontinuation
- 1997-05-19 US US08/858,819 patent/US5981342A/en not_active Expired - Fee Related
-
1999
- 1999-09-22 US US09/401,385 patent/US6376875B1/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| DE19620032C2 (de) | 1998-07-09 |
| KR970077399A (ko) | 1997-12-12 |
| US5981342A (en) | 1999-11-09 |
| JPH1056090A (ja) | 1998-02-24 |
| EP0810673B1 (de) | 2000-08-30 |
| DE19620032A1 (de) | 1997-11-20 |
| US6376875B1 (en) | 2002-04-23 |
| EP0810673A1 (de) | 1997-12-03 |
| DE59702271D1 (de) | 2000-10-05 |
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