TW334616B - Method for programming flash memory cells - Google Patents
Method for programming flash memory cellsInfo
- Publication number
- TW334616B TW334616B TW086104001A TW86104001A TW334616B TW 334616 B TW334616 B TW 334616B TW 086104001 A TW086104001 A TW 086104001A TW 86104001 A TW86104001 A TW 86104001A TW 334616 B TW334616 B TW 334616B
- Authority
- TW
- Taiwan
- Prior art keywords
- flash memory
- gate
- programming
- memory cell
- electric field
- Prior art date
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 230000005684 electric field Effects 0.000 abstract 2
- 239000002784 hot electron Substances 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 abstract 1
- 229940101532 meted Drugs 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/32055—Deposition of semiconductive layers, e.g. poly - or amorphous silicon layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
- H01L29/7884—Programmable transistors with only two possible levels of programmation charging by hot carrier injection
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
- H10B41/41—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region of a memory region comprising a cell select transistor, e.g. NAND
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
- Read Only Memory (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019960009730A KR100217900B1 (ko) | 1996-04-01 | 1996-04-01 | 플래쉬 메모리 셀의 프로그램 방법 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW334616B true TW334616B (en) | 1998-06-21 |
Family
ID=19454775
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW086104001A TW334616B (en) | 1996-04-01 | 1997-03-28 | Method for programming flash memory cells |
Country Status (8)
Country | Link |
---|---|
US (1) | US5867426A (zh) |
EP (1) | EP0800179B1 (zh) |
JP (1) | JP2963882B2 (zh) |
KR (1) | KR100217900B1 (zh) |
CN (1) | CN1084931C (zh) |
DE (1) | DE69719584T2 (zh) |
GB (1) | GB2311895B (zh) |
TW (1) | TW334616B (zh) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100207504B1 (ko) * | 1996-03-26 | 1999-07-15 | 윤종용 | 불휘발성 메모리소자, 그 제조방법 및 구동방법 |
KR100276653B1 (ko) | 1998-08-27 | 2001-01-15 | 윤종용 | 스프릿 게이트형 불휘발성 메모리 셀의 구동방법 및 이 셀들을구비한 반도체 메모리 장치의 구동방법 |
KR100293637B1 (ko) | 1998-10-27 | 2001-07-12 | 박종섭 | 드레인 전압 펌핑 회로 |
US6638821B1 (en) * | 2002-01-10 | 2003-10-28 | Taiwan Semiconductor Manufacturing Company | Flash EEPROM with function of single bit erasing by an application of negative control gate selection |
US7057931B2 (en) * | 2003-11-07 | 2006-06-06 | Sandisk Corporation | Flash memory programming using gate induced junction leakage current |
TW200607080A (en) * | 2004-08-02 | 2006-02-16 | Powerchip Semiconductor Corp | Flash memory cell and fabricating method thereof |
US8369155B2 (en) | 2007-08-08 | 2013-02-05 | Hynix Semiconductor Inc. | Operating method in a non-volatile memory device |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5280446A (en) * | 1990-09-20 | 1994-01-18 | Bright Microelectronics, Inc. | Flash eprom memory circuit having source side programming |
JP3004043B2 (ja) * | 1990-10-23 | 2000-01-31 | 株式会社東芝 | 不揮発性半導体メモリ装置 |
BE1004424A3 (nl) * | 1991-01-31 | 1992-11-17 | Imec Inter Uni Micro Electr | Transistorstruktuur voor uitwisbare en programmeerbare geheugens. |
US5274588A (en) * | 1991-07-25 | 1993-12-28 | Texas Instruments Incorporated | Split-gate cell for an EEPROM |
US5317179A (en) * | 1991-09-23 | 1994-05-31 | Integrated Silicon Solution, Inc. | Non-volatile semiconductor memory cell |
WO1994015363A1 (en) * | 1992-12-28 | 1994-07-07 | Yu Shih Chiang | Non-volatile semiconductor memory cell |
US5324998A (en) * | 1993-02-10 | 1994-06-28 | Micron Semiconductor, Inc. | Zero power reprogrammable flash cell for a programmable logic device |
JP3105109B2 (ja) * | 1993-05-19 | 2000-10-30 | 株式会社東芝 | 不揮発性半導体記憶装置 |
US5349220A (en) * | 1993-08-10 | 1994-09-20 | United Microelectronics Corporation | Flash memory cell and its operation |
US5471422A (en) * | 1994-04-11 | 1995-11-28 | Motorola, Inc. | EEPROM cell with isolation transistor and methods for making and operating the same |
US5511021A (en) * | 1995-02-22 | 1996-04-23 | National Semiconductor Corporation | Method for programming a single EPROM or flash memory cell to store multiple levels of data that utilizes a forward-biased source-to-substrate junction |
US5491657A (en) * | 1995-02-24 | 1996-02-13 | Advanced Micro Devices, Inc. | Method for bulk (or byte) charging and discharging an array of flash EEPROM memory cells |
-
1996
- 1996-04-01 KR KR1019960009730A patent/KR100217900B1/ko not_active IP Right Cessation
-
1997
- 1997-03-28 TW TW086104001A patent/TW334616B/zh not_active IP Right Cessation
- 1997-03-31 JP JP7936197A patent/JP2963882B2/ja not_active Expired - Fee Related
- 1997-04-01 EP EP97105431A patent/EP0800179B1/en not_active Expired - Lifetime
- 1997-04-01 GB GB9706573A patent/GB2311895B/en not_active Expired - Fee Related
- 1997-04-01 DE DE69719584T patent/DE69719584T2/de not_active Expired - Lifetime
- 1997-04-01 US US08/831,044 patent/US5867426A/en not_active Expired - Lifetime
- 1997-04-01 CN CN97113084A patent/CN1084931C/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
KR970072447A (ko) | 1997-11-07 |
EP0800179B1 (en) | 2003-03-12 |
JP2963882B2 (ja) | 1999-10-18 |
GB2311895A (en) | 1997-10-08 |
EP0800179A3 (en) | 1999-04-28 |
JPH1032272A (ja) | 1998-02-03 |
DE69719584D1 (de) | 2003-04-17 |
CN1168539A (zh) | 1997-12-24 |
EP0800179A2 (en) | 1997-10-08 |
DE69719584T2 (de) | 2004-04-08 |
CN1084931C (zh) | 2002-05-15 |
GB2311895B (en) | 2001-03-14 |
KR100217900B1 (ko) | 1999-09-01 |
GB9706573D0 (en) | 1997-05-21 |
US5867426A (en) | 1999-02-02 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |