TW330876B - Method of separating semiconductor elements formed in a wafer of semiconductor material - Google Patents
Method of separating semiconductor elements formed in a wafer of semiconductor materialInfo
- Publication number
- TW330876B TW330876B TW086101263A TW86101263A TW330876B TW 330876 B TW330876 B TW 330876B TW 086101263 A TW086101263 A TW 086101263A TW 86101263 A TW86101263 A TW 86101263A TW 330876 B TW330876 B TW 330876B
- Authority
- TW
- Taiwan
- Prior art keywords
- wafer
- semiconductor material
- radiation
- elements formed
- separating
- Prior art date
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/0604—Shaping the laser beam, e.g. by masks or multi-focusing by a combination of beams
- B23K26/0608—Shaping the laser beam, e.g. by masks or multi-focusing by a combination of beams in the same heat affected zone [HAZ]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/067—Dividing the beam into multiple beams, e.g. multifocusing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Optics & Photonics (AREA)
- Mechanical Engineering (AREA)
- Plasma & Fusion (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Laser Beam Processing (AREA)
- Dicing (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP96200305 | 1996-02-09 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW330876B true TW330876B (en) | 1998-05-01 |
Family
ID=8223647
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW086101263A TW330876B (en) | 1996-02-09 | 1997-02-04 | Method of separating semiconductor elements formed in a wafer of semiconductor material |
Country Status (6)
Country | Link |
---|---|
US (1) | US5922224A (zh) |
EP (1) | EP0820640B1 (zh) |
JP (1) | JPH11503880A (zh) |
KR (1) | KR100479962B1 (zh) |
TW (1) | TW330876B (zh) |
WO (1) | WO1997029509A1 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI511887B (zh) * | 2007-10-31 | 2015-12-11 | Jds Uniphase Corp | 於顏料薄片四周提供邊框或邊界以供隱蔽安全應用之用 |
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JP3293136B2 (ja) | 1993-06-04 | 2002-06-17 | セイコーエプソン株式会社 | レーザ加工装置及びレーザ加工方法 |
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US6413839B1 (en) * | 1998-10-23 | 2002-07-02 | Emcore Corporation | Semiconductor device separation using a patterned laser projection |
US6555447B2 (en) | 1999-06-08 | 2003-04-29 | Kulicke & Soffa Investments, Inc. | Method for laser scribing of wafers |
US6562698B2 (en) * | 1999-06-08 | 2003-05-13 | Kulicke & Soffa Investments, Inc. | Dual laser cutting of wafers |
US6420245B1 (en) * | 1999-06-08 | 2002-07-16 | Kulicke & Soffa Investments, Inc. | Method for singulating semiconductor wafers |
JP3346374B2 (ja) * | 1999-06-23 | 2002-11-18 | 住友電気工業株式会社 | レーザ穴開け加工装置 |
US6515256B1 (en) * | 2000-04-13 | 2003-02-04 | Vincent P. Battaglia | Process for laser machining continuous metal strip |
US6841788B1 (en) * | 2000-08-03 | 2005-01-11 | Ascend Instruments, Inc. | Transmission electron microscope sample preparation |
JP4659300B2 (ja) | 2000-09-13 | 2011-03-30 | 浜松ホトニクス株式会社 | レーザ加工方法及び半導体チップの製造方法 |
EP1341991A4 (en) * | 2000-11-17 | 2007-05-30 | Emcore Corp | LASER ISOLATED CHIP WITH TAPPED SIDE WALLS TO IMPROVE LIGHTING OUTPUT |
AU2002210860A1 (en) * | 2000-12-15 | 2002-06-24 | Xsil Technology Limited | Laser machining of semiconductor materials |
US6527965B1 (en) * | 2001-02-09 | 2003-03-04 | Nayna Networks, Inc. | Method for fabricating improved mirror arrays for physical separation |
KR100700997B1 (ko) * | 2001-06-21 | 2007-03-28 | 삼성전자주식회사 | 기판 다중 절단 방법 및 이를 수행하기 위한 기판 다중절단 장치 |
DE10210040C1 (de) * | 2002-03-07 | 2003-10-30 | Siemens Ag | Betriebsverfahren und Transportwagen für eine Laserbearbeitungsanlage |
ATE534142T1 (de) | 2002-03-12 | 2011-12-15 | Hamamatsu Photonics Kk | Verfahren zum auftrennen eines substrats |
TWI326626B (en) * | 2002-03-12 | 2010-07-01 | Hamamatsu Photonics Kk | Laser processing method |
US20080316575A1 (en) * | 2002-08-01 | 2008-12-25 | The University Of Chicago., | Aberration correction of optical traps |
TWI248244B (en) | 2003-02-19 | 2006-01-21 | J P Sercel Associates Inc | System and method for cutting using a variable astigmatic focal beam spot |
EP1518634A1 (en) * | 2003-09-23 | 2005-03-30 | Advanced Laser Separation International (ALSI) B.V. | A method of and a device for separating semiconductor elements formed in a wafer of semiconductor material |
JP2005144487A (ja) * | 2003-11-13 | 2005-06-09 | Seiko Epson Corp | レーザ加工装置及びレーザ加工方法 |
DE112004002394D2 (de) * | 2003-12-20 | 2006-11-16 | Hentze Lissotschenko Patentver | Vorrichtung zum Bearbeiten eines Werkstücks mit Laserlicht |
EP1550528A1 (en) * | 2003-12-30 | 2005-07-06 | Advanced Laser Separation International (ALSI) B.V. | Method, device and diffraction grating for separating semiconductor elements formed on a substrate by altering said diffraction grating |
EP1550527A1 (en) * | 2003-12-30 | 2005-07-06 | Advanced Laser Separation International (ALSI) B.V. | Method of and arrangement for separating semiconductor elements formed in a wafer of semiconductor material, and semiconductor element separated therewith |
US7173212B1 (en) | 2004-02-13 | 2007-02-06 | Semak Vladimir V | Method and apparatus for laser cutting and drilling of semiconductor materials and glass |
JP4440036B2 (ja) * | 2004-08-11 | 2010-03-24 | 株式会社ディスコ | レーザー加工方法 |
CA2479986A1 (fr) * | 2004-09-14 | 2006-03-14 | Vincent F. Treanton | Fabrication de guides d`onde optique par ablation laser |
US20060086898A1 (en) * | 2004-10-26 | 2006-04-27 | Matsushita Electric Industrial Co., Ltd. | Method and apparatus of making highly repetitive micro-pattern using laser writer |
NL1028588C2 (nl) * | 2005-03-22 | 2006-09-25 | Fico Bv | Werkwijze en inrichting voor het separeren van producten met een gecontroleerde snederand en gesepareerd product. |
ATE512747T1 (de) * | 2005-10-31 | 2011-07-15 | Advanced Laser Separation Internat Alsi B V | Verfahren zum formen eines oder mehrerer getrennten ritze in einer oberfläche eines substrats |
EP1993781A4 (en) * | 2006-02-03 | 2016-11-09 | Semiconductor Energy Lab Co Ltd | METHOD FOR MANUFACTURING MEMORY ELEMENT, LASER IRRADIATION APPARATUS, AND LASER IRRADIATION METHOD |
KR100884629B1 (ko) * | 2007-08-06 | 2009-02-23 | 주식회사 이오테크닉스 | 레이저 가공 장치 및 방법 |
WO2009060048A1 (de) * | 2007-11-07 | 2009-05-14 | Ceramtec Ag | Verfahren zum laserritzen von spröden bauteilen |
FR2935916B1 (fr) * | 2008-09-12 | 2011-08-26 | Air Liquide | Procede et installation de coupage laser avec modification du facteur de qualite du faisceau laser |
WO2010048733A1 (en) * | 2008-10-29 | 2010-05-06 | Oerlikon Solar Ip Ag, Trübbach | Method for dividing a semiconductor film formed on a substrate into plural regions by multiple laser beam irradiation |
US20100129984A1 (en) * | 2008-11-26 | 2010-05-27 | George Vakanas | Wafer singulation in high volume manufacturing |
US8187983B2 (en) * | 2009-04-16 | 2012-05-29 | Micron Technology, Inc. | Methods for fabricating semiconductor components using thinning and back side laser processing |
US20130256286A1 (en) * | 2009-12-07 | 2013-10-03 | Ipg Microsystems Llc | Laser processing using an astigmatic elongated beam spot and using ultrashort pulses and/or longer wavelengths |
KR20110114972A (ko) | 2010-04-14 | 2011-10-20 | 삼성전자주식회사 | 레이저 빔을 이용한 기판의 가공 방법 |
RU2459691C2 (ru) | 2010-11-29 | 2012-08-27 | Юрий Георгиевич Шретер | Способ отделения поверхностного слоя полупроводникового кристалла (варианты) |
TWI520199B (zh) | 2012-02-18 | 2016-02-01 | 先進科技新加坡有限公司 | 用於以劃線對準之執行中控制而對一實質平面半導體基板劃線之方法及裝置 |
TWI543833B (zh) | 2013-01-28 | 2016-08-01 | 先進科技新加坡有限公司 | 將半導體基板輻射開槽之方法 |
GB2512291B (en) * | 2013-03-22 | 2015-02-11 | M Solv Ltd | Apparatus and methods for forming plural groups of laser beams |
TWI561327B (en) | 2013-10-16 | 2016-12-11 | Asm Tech Singapore Pte Ltd | Laser scribing apparatus comprising adjustable spatial filter and method for etching semiconductor substrate |
JP2015170675A (ja) * | 2014-03-06 | 2015-09-28 | 株式会社ディスコ | 板状物の加工方法 |
US9972575B2 (en) * | 2016-03-03 | 2018-05-15 | Applied Materials, Inc. | Hybrid wafer dicing approach using a split beam laser scribing process and plasma etch process |
DE102016105214A1 (de) | 2016-03-21 | 2017-09-21 | Trumpf Laser- Und Systemtechnik Gmbh | Strahlaufteilung zur Laserbearbeitung |
US20190067049A1 (en) * | 2017-08-23 | 2019-02-28 | Asm Technology Singapore Pte Ltd | Radiative wafer cutting using selective focusing depths |
US20190151993A1 (en) * | 2017-11-22 | 2019-05-23 | Asm Technology Singapore Pte Ltd | Laser-cutting using selective polarization |
JP7118804B2 (ja) * | 2018-08-17 | 2022-08-16 | キオクシア株式会社 | 半導体装置の製造方法 |
US10615044B1 (en) | 2018-10-18 | 2020-04-07 | Asm Technology Singapore Pte Ltd | Material cutting using laser pulses |
US10576585B1 (en) | 2018-12-29 | 2020-03-03 | Cree, Inc. | Laser-assisted method for parting crystalline material |
US10562130B1 (en) | 2018-12-29 | 2020-02-18 | Cree, Inc. | Laser-assisted method for parting crystalline material |
US11024501B2 (en) | 2018-12-29 | 2021-06-01 | Cree, Inc. | Carrier-assisted method for parting crystalline material along laser damage region |
US10611052B1 (en) | 2019-05-17 | 2020-04-07 | Cree, Inc. | Silicon carbide wafers with relaxed positive bow and related methods |
DE102019006095A1 (de) * | 2019-08-29 | 2021-03-04 | Azur Space Solar Power Gmbh | Vereinzelungsverfahren zur Vereinzelung einer mehrere Solarzellenstapel umfasssenden Halbleiterscheibe |
NL2026427B1 (en) | 2019-09-10 | 2021-10-13 | Tokyo Seimitsu Co Ltd | Laser machining apparatus |
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DE4202487A1 (de) * | 1992-01-27 | 1993-07-29 | Optec Ges Fuer Optische Techni | Vorrichtung zum schneiden mittels laserstrahlung |
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JP3293136B2 (ja) * | 1993-06-04 | 2002-06-17 | セイコーエプソン株式会社 | レーザ加工装置及びレーザ加工方法 |
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US5641416A (en) * | 1995-10-25 | 1997-06-24 | Micron Display Technology, Inc. | Method for particulate-free energy beam cutting of a wafer of die assemblies |
-
1997
- 1997-01-17 JP JP9528321A patent/JPH11503880A/ja active Pending
- 1997-01-17 KR KR1019970707125A patent/KR100479962B1/ko not_active IP Right Cessation
- 1997-01-17 EP EP97900077A patent/EP0820640B1/en not_active Expired - Lifetime
- 1997-01-17 WO PCT/IB1997/000028 patent/WO1997029509A1/en active IP Right Grant
- 1997-02-04 US US08/795,717 patent/US5922224A/en not_active Expired - Lifetime
- 1997-02-04 TW TW086101263A patent/TW330876B/zh not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI511887B (zh) * | 2007-10-31 | 2015-12-11 | Jds Uniphase Corp | 於顏料薄片四周提供邊框或邊界以供隱蔽安全應用之用 |
Also Published As
Publication number | Publication date |
---|---|
EP0820640A1 (en) | 1998-01-28 |
WO1997029509A1 (en) | 1997-08-14 |
JPH11503880A (ja) | 1999-03-30 |
KR100479962B1 (ko) | 2005-05-16 |
EP0820640B1 (en) | 2011-07-13 |
US5922224A (en) | 1999-07-13 |
KR19980703725A (ko) | 1998-12-05 |
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Legal Events
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MK4A | Expiration of patent term of an invention patent |