TW329042B - Binary ROM and its manufacturing method - Google Patents
Binary ROM and its manufacturing methodInfo
- Publication number
- TW329042B TW329042B TW086101856A TW86101856A TW329042B TW 329042 B TW329042 B TW 329042B TW 086101856 A TW086101856 A TW 086101856A TW 86101856 A TW86101856 A TW 86101856A TW 329042 B TW329042 B TW 329042B
- Authority
- TW
- Taiwan
- Prior art keywords
- insulation layer
- forming
- substrate
- type
- doping
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/102—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including bipolar components
- H01L27/1021—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including bipolar components including diodes only
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Memories (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW086101856A TW329042B (en) | 1997-02-17 | 1997-02-17 | Binary ROM and its manufacturing method |
US08/838,152 US5843824A (en) | 1997-02-17 | 1997-04-15 | Diode-based semiconductor read-only memory device and method of fabricating the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW086101856A TW329042B (en) | 1997-02-17 | 1997-02-17 | Binary ROM and its manufacturing method |
Publications (1)
Publication Number | Publication Date |
---|---|
TW329042B true TW329042B (en) | 1998-04-01 |
Family
ID=21626388
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW086101856A TW329042B (en) | 1997-02-17 | 1997-02-17 | Binary ROM and its manufacturing method |
Country Status (2)
Country | Link |
---|---|
US (1) | US5843824A (zh) |
TW (1) | TW329042B (zh) |
Families Citing this family (47)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6143610A (en) * | 1997-01-06 | 2000-11-07 | United Microelectronics Corp. | Method for fabricating high-density semiconductor read-only memory device |
TW377496B (en) * | 1997-01-15 | 1999-12-21 | United Microelectronics Corp | Method of manufacturing read-only memory structure |
US6466498B2 (en) | 2001-01-10 | 2002-10-15 | Hewlett-Packard Company | Discontinuity-based memory cell sensing |
TW512522B (en) * | 2001-02-21 | 2002-12-01 | Winbond Electronics Corp | Mask ROM structure |
US20070076509A1 (en) * | 2002-08-28 | 2007-04-05 | Guobiao Zhang | Three-Dimensional Mask-Programmable Read-Only Memory |
CN100437983C (zh) * | 2003-02-14 | 2008-11-26 | 旺宏电子股份有限公司 | 罩幕式只读存储器的制造方法及其结构 |
CN100403519C (zh) * | 2003-08-07 | 2008-07-16 | 旺宏电子股份有限公司 | 具有二极管存储胞光罩式只读存储器的制作方法 |
US7476945B2 (en) * | 2004-03-17 | 2009-01-13 | Sanyo Electric Co., Ltd. | Memory having reduced memory cell size |
JP2007005580A (ja) * | 2005-06-24 | 2007-01-11 | Sanyo Electric Co Ltd | メモリ |
US7633128B2 (en) * | 2005-07-15 | 2009-12-15 | Guobiao Zhang | N-ary mask-programmable memory |
US7821080B2 (en) * | 2005-07-15 | 2010-10-26 | Guobiao Zhang | N-ary three-dimensional mask-programmable read-only memory |
JP4907916B2 (ja) * | 2005-07-22 | 2012-04-04 | オンセミコンダクター・トレーディング・リミテッド | メモリ |
US8885384B2 (en) | 2007-01-11 | 2014-11-11 | Chengdu Haicun Ip Technology Llc | Mask-programmed read-only memory with reserved space |
US20110019459A1 (en) * | 2007-01-11 | 2011-01-27 | Guobiao Zhang | Three-Dimensional Mask-Programmable Read-Only Memory with Reserved Space |
US8564070B2 (en) | 2010-05-24 | 2013-10-22 | Chengdu Haicun Ip Technology Llc | Large bit-per-cell three-dimensional mask-programmable read-only memory |
US9299390B2 (en) | 2011-09-01 | 2016-03-29 | HangZhou HaiCun Informationa Technology Co., Ltd. | Discrete three-dimensional vertical memory comprising off-die voltage generator |
US9396764B2 (en) | 2011-09-01 | 2016-07-19 | HangZhou HaiCun Information Technology Co., Ltd. | Discrete three-dimensional memory |
US8699257B2 (en) | 2011-09-01 | 2014-04-15 | HangZhou HaiCun Information Technology Co., Ltd. | Three-dimensional writable printed memory |
US8890300B2 (en) | 2011-09-01 | 2014-11-18 | Chengdu Haicun Ip Technology Llc | Discrete three-dimensional memory comprising off-die read/write-voltage generator |
US9305604B2 (en) | 2011-09-01 | 2016-04-05 | HangZhou HaiCun Information Technology Co., Ltd. | Discrete three-dimensional vertical memory comprising off-die address/data-translator |
US9305605B2 (en) | 2011-09-01 | 2016-04-05 | Chengdu Haicun Ip Technology Llc | Discrete three-dimensional vertical memory |
US9117493B2 (en) | 2011-09-01 | 2015-08-25 | Chengdu Haicun Ip Technology Llc | Discrete three-dimensional memory comprising off-die address/data translator |
US9190412B2 (en) | 2011-09-01 | 2015-11-17 | HangZhou HaiCun Information Technology Co., Ltd. | Three-dimensional offset-printed memory |
US9559082B2 (en) | 2011-09-01 | 2017-01-31 | HangZhou HaiCun Information Technology Co., Ltd. | Three-dimensional vertical memory comprising dice with different interconnect levels |
US9508395B2 (en) | 2011-09-01 | 2016-11-29 | HangZhou HaiCun Information Technology Co., Ltd. | Three-dimensional one-time-programmable memory comprising off-die read/write-voltage generator |
US9123393B2 (en) | 2011-09-01 | 2015-09-01 | HangZhou KiCun nformation Technology Co. Ltd. | Discrete three-dimensional vertical memory |
US9558842B2 (en) | 2011-09-01 | 2017-01-31 | HangZhou HaiCun Information Technology Co., Ltd. | Discrete three-dimensional one-time-programmable memory |
US9024425B2 (en) | 2011-09-01 | 2015-05-05 | HangZhou HaiCun Information Technology Co., Ltd. | Three-dimensional memory comprising an integrated intermediate-circuit die |
US9666300B2 (en) | 2011-09-01 | 2017-05-30 | XiaMen HaiCun IP Technology LLC | Three-dimensional one-time-programmable memory comprising off-die address/data-translator |
US8921991B2 (en) | 2011-09-01 | 2014-12-30 | Chengdu Haicun Ip Technology Llc | Discrete three-dimensional memory |
US9093129B2 (en) | 2011-09-01 | 2015-07-28 | Chengdu Haicun Ip Technology Llc | Discrete three-dimensional memory comprising dice with different BEOL structures |
US9001555B2 (en) | 2012-03-30 | 2015-04-07 | Chengdu Haicun Ip Technology Llc | Small-grain three-dimensional memory |
US9293509B2 (en) | 2013-03-20 | 2016-03-22 | HangZhou HaiCun Information Technology Co., Ltd. | Small-grain three-dimensional memory |
US10211258B2 (en) | 2014-04-14 | 2019-02-19 | HangZhou HaiCun Information Technology Co., Ltd. | Manufacturing methods of JFET-type compact three-dimensional memory |
CN104978990B (zh) | 2014-04-14 | 2017-11-10 | 成都海存艾匹科技有限公司 | 紧凑型三维存储器 |
US10304495B2 (en) | 2014-04-14 | 2019-05-28 | Chengdu Haicun Ip Technology Llc | Compact three-dimensional memory with semi-conductive address line portion |
US10199432B2 (en) | 2014-04-14 | 2019-02-05 | HangZhou HaiCun Information Technology Co., Ltd. | Manufacturing methods of MOSFET-type compact three-dimensional memory |
US10446193B2 (en) | 2014-04-14 | 2019-10-15 | HangZhou HaiCun Information Technology Co., Ltd. | Mixed three-dimensional memory |
CN104979352A (zh) | 2014-04-14 | 2015-10-14 | 成都海存艾匹科技有限公司 | 混合型三维印录存储器 |
US10304553B2 (en) | 2014-04-14 | 2019-05-28 | HangZhou HaiCun Information Technology Co., Ltd. | Compact three-dimensional memory with an above-substrate decoding stage |
US10079239B2 (en) | 2014-04-14 | 2018-09-18 | HangZhou HaiCun Information Technology Co., Ltd. | Compact three-dimensional mask-programmed read-only memory |
US11170863B2 (en) | 2016-04-14 | 2021-11-09 | Southern University Of Science And Technology | Multi-bit-per-cell three-dimensional resistive random-access memory (3D-RRAM) |
CN107301878B (zh) | 2016-04-14 | 2020-09-25 | 成都海存艾匹科技有限公司 | 多位元三维一次编程存储器 |
US10490562B2 (en) | 2016-04-16 | 2019-11-26 | HangZhou HaiCun Information Technology Co., Ltd. | Three-dimensional vertical one-time-programmable memory comprising multiple antifuse sub-layers |
US10559574B2 (en) | 2016-04-16 | 2020-02-11 | HangZhou HaiCun Information Technology Co., Ltd. | Three-dimensional vertical one-time-programmable memory comprising Schottky diodes |
CN107316869A (zh) | 2016-04-16 | 2017-11-03 | 成都海存艾匹科技有限公司 | 三维纵向一次编程存储器 |
CN110534519B (zh) | 2018-05-27 | 2022-04-22 | 杭州海存信息技术有限公司 | 改进的三维纵向存储器 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4694566A (en) * | 1982-04-12 | 1987-09-22 | Signetics Corporation | Method for manufacturing programmable read-only memory containing cells formed with opposing diodes |
JP2581415B2 (ja) * | 1993-10-08 | 1997-02-12 | 日本電気株式会社 | 半導体記憶装置の製造方法 |
US5441907A (en) * | 1994-06-27 | 1995-08-15 | Taiwan Semiconductor Manufacturing Company | Process for manufacturing a plug-diode mask ROM |
-
1997
- 1997-02-17 TW TW086101856A patent/TW329042B/zh active
- 1997-04-15 US US08/838,152 patent/US5843824A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US5843824A (en) | 1998-12-01 |
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