TW312041B - - Google Patents

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Publication number
TW312041B
TW312041B TW085110307A TW85110307A TW312041B TW 312041 B TW312041 B TW 312041B TW 085110307 A TW085110307 A TW 085110307A TW 85110307 A TW85110307 A TW 85110307A TW 312041 B TW312041 B TW 312041B
Authority
TW
Taiwan
Prior art keywords
gate electrode
insulating film
gate
source
electrode
Prior art date
Application number
TW085110307A
Other languages
English (en)
Chinese (zh)
Original Assignee
Nippon Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co filed Critical Nippon Electric Co
Application granted granted Critical
Publication of TW312041B publication Critical patent/TW312041B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/6891—Floating-gate IGFETs characterised by the shapes, relative sizes or dispositions of the floating gate electrode

Landscapes

  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
TW085110307A 1995-08-25 1996-08-23 TW312041B (OSRAM)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7217834A JP2950212B2 (ja) 1995-08-25 1995-08-25 不揮発性半導体記憶装置およびその製造方法

Publications (1)

Publication Number Publication Date
TW312041B true TW312041B (OSRAM) 1997-08-01

Family

ID=16710485

Family Applications (1)

Application Number Title Priority Date Filing Date
TW085110307A TW312041B (OSRAM) 1995-08-25 1996-08-23

Country Status (4)

Country Link
US (1) US5691937A (OSRAM)
JP (1) JP2950212B2 (OSRAM)
KR (1) KR100202202B1 (OSRAM)
TW (1) TW312041B (OSRAM)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3081543B2 (ja) * 1996-03-29 2000-08-28 三洋電機株式会社 スプリットゲート型トランジスタ、スプリットゲート型トランジスタの製造方法、不揮発性半導体メモリ
US5841162A (en) * 1997-03-24 1998-11-24 Nec Corporation Non-volatile semiconductor memory with floating gate and control gate and fabrication process therefor
US5969383A (en) * 1997-06-16 1999-10-19 Motorola, Inc. Split-gate memory device and method for accessing the same
US6462779B1 (en) 1998-02-23 2002-10-08 Eastman Kodak Company Constant speed, variable resolution two-phase CCD
KR100276653B1 (ko) 1998-08-27 2001-01-15 윤종용 스프릿 게이트형 불휘발성 메모리 셀의 구동방법 및 이 셀들을구비한 반도체 메모리 장치의 구동방법
US6868015B2 (en) * 2000-09-20 2005-03-15 Silicon Storage Technology, Inc. Semiconductor memory array of floating gate memory cells with control gate spacer portions
US6858494B2 (en) 2002-08-20 2005-02-22 Taiwan Semiconductor Manufacturing Company Structure and fabricating method with self-aligned bit line contact to word line in split gate flash
US6828618B2 (en) * 2002-10-30 2004-12-07 Freescale Semiconductor, Inc. Split-gate thin-film storage NVM cell
KR100696374B1 (ko) 2004-10-08 2007-03-19 삼성전자주식회사 비휘발성 기억 소자 및 그 형성 방법
JP5412048B2 (ja) * 2008-04-02 2014-02-12 ルネサスエレクトロニクス株式会社 半導体記憶装置及びその製造方法
US7692972B1 (en) 2008-07-22 2010-04-06 Actel Corporation Split gate memory cell for programmable circuit device
JP7462389B2 (ja) * 2019-07-18 2024-04-05 ローム株式会社 不揮発性半導体記憶装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5263684A (en) * 1975-11-20 1977-05-26 Toshiba Corp Non-volatile semiconductor memory device
US5016215A (en) * 1987-09-30 1991-05-14 Texas Instruments Incorporated High speed EPROM with reverse polarity voltages applied to source and drain regions during reading and writing
US4861730A (en) * 1988-01-25 1989-08-29 Catalyst Semiconductor, Inc. Process for making a high density split gate nonvolatile memory cell
JPH04277681A (ja) * 1991-03-06 1992-10-02 Nec Corp 電気的に消去・書き込み可能な不揮発性半導体記憶装置
US5293328A (en) * 1992-01-15 1994-03-08 National Semiconductor Corporation Electrically reprogrammable EPROM cell with merged transistor and optiumum area
JP3251699B2 (ja) * 1993-04-16 2002-01-28 ローム株式会社 不揮発性記憶装置
US5508955A (en) * 1993-05-20 1996-04-16 Nexcom Technology, Inc. Electronically erasable-programmable memory cell having buried bit line
US5349220A (en) * 1993-08-10 1994-09-20 United Microelectronics Corporation Flash memory cell and its operation

Also Published As

Publication number Publication date
KR100202202B1 (ko) 1999-06-15
KR970013339A (ko) 1997-03-29
JP2950212B2 (ja) 1999-09-20
JPH0964208A (ja) 1997-03-07
US5691937A (en) 1997-11-25

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