TW288194B - - Google Patents

Info

Publication number
TW288194B
TW288194B TW084113772A TW84113772A TW288194B TW 288194 B TW288194 B TW 288194B TW 084113772 A TW084113772 A TW 084113772A TW 84113772 A TW84113772 A TW 84113772A TW 288194 B TW288194 B TW 288194B
Authority
TW
Taiwan
Application number
TW084113772A
Original Assignee
Matsushita Electric Ind Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP6322032A external-priority patent/JPH08181144A/ja
Priority claimed from JP752395A external-priority patent/JP3365879B2/ja
Priority claimed from JP00940195A external-priority patent/JP3363639B2/ja
Application filed by Matsushita Electric Ind Co Ltd filed Critical Matsushita Electric Ind Co Ltd
Application granted granted Critical
Publication of TW288194B publication Critical patent/TW288194B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
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    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
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    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
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    • H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L24/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
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    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/0401—Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
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    • H01L2224/1182—Applying permanent coating, e.g. in-situ coating
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    • H01L2224/1183—Reworking, e.g. shaping
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    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/8119—Arrangement of the bump connectors prior to mounting
    • H01L2224/81191—Arrangement of the bump connectors prior to mounting wherein the bump connectors are disposed only on the semiconductor or solid-state body
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Wire Bonding (AREA)
TW084113772A 1994-12-26 1995-12-22 TW288194B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP6322032A JPH08181144A (ja) 1994-12-26 1994-12-26 半導体装置の実装方法
JP752395A JP3365879B2 (ja) 1995-01-20 1995-01-20 半導体装置の製造方法
JP00940195A JP3363639B2 (ja) 1995-01-25 1995-01-25 集積回路装置およびその製造方法

Publications (1)

Publication Number Publication Date
TW288194B true TW288194B (zh) 1996-10-11

Family

ID=27277639

Family Applications (1)

Application Number Title Priority Date Filing Date
TW084113772A TW288194B (zh) 1994-12-26 1995-12-22

Country Status (6)

Country Link
US (1) US5686353A (zh)
EP (1) EP0720226B1 (zh)
KR (1) KR100239286B1 (zh)
CN (2) CN1051641C (zh)
DE (1) DE69535551T2 (zh)
TW (1) TW288194B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI580510B (zh) * 2011-02-15 2017-05-01 Toray Engineering Company Limited Installation method and installation device

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JP2951882B2 (ja) * 1996-03-06 1999-09-20 松下電器産業株式会社 半導体装置の製造方法及びこれを用いて製造した半導体装置
JPH09252005A (ja) * 1996-03-15 1997-09-22 Shinkawa Ltd バンプ形成方法
EP1158579B1 (en) * 1996-10-01 2008-11-19 Panasonic Corporation Wire bonding capillary for forming bump electrodes
JP3400279B2 (ja) * 1997-01-13 2003-04-28 株式会社新川 バンプ形成方法
JP3377934B2 (ja) * 1997-07-22 2003-02-17 松下電器産業株式会社 バンプボンディング方法およびバンプボンディング装置
JPH11233554A (ja) * 1998-02-17 1999-08-27 Mitsubishi Electric Corp 半田バンプの矯正方法
JP3942738B2 (ja) * 1998-07-17 2007-07-11 松下電器産業株式会社 バンプ接合装置及び方法、並びに半導体部品製造装置
WO2000011718A1 (de) * 1998-08-22 2000-03-02 Mci Computer Gmbh Elektronisches bauelement vom flip-chip-typ
US6329832B1 (en) * 1998-10-05 2001-12-11 Micron Technology, Inc. Method for in-line testing of flip-chip semiconductor assemblies
JP2000138249A (ja) * 1998-10-29 2000-05-16 Matsushita Electric Ind Co Ltd 突起電極形成方法及び実装方法
US6255208B1 (en) * 1999-01-25 2001-07-03 International Business Machines Corporation Selective wafer-level testing and burn-in
US6348739B1 (en) * 1999-04-28 2002-02-19 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method of manufacturing the same
TW504779B (en) * 1999-11-18 2002-10-01 Texas Instruments Inc Compliant wirebond pedestal
US6511865B1 (en) 2000-09-20 2003-01-28 Charles W. C. Lin Method for forming a ball bond connection joint on a conductive trace and conductive pad in a semiconductor chip assembly
US6350632B1 (en) 2000-09-20 2002-02-26 Charles W. C. Lin Semiconductor chip assembly with ball bond connection joint
US6350386B1 (en) 2000-09-20 2002-02-26 Charles W. C. Lin Method of making a support circuit with a tapered through-hole for a semiconductor chip assembly
US6544813B1 (en) 2000-10-02 2003-04-08 Charles W. C. Lin Method of making a semiconductor chip assembly with a conductive trace subtractively formed before and after chip attachment
US6448108B1 (en) 2000-10-02 2002-09-10 Charles W. C. Lin Method of making a semiconductor chip assembly with a conductive trace subtractively formed before and after chip attachment
US6576493B1 (en) 2000-10-13 2003-06-10 Bridge Semiconductor Corporation Method of connecting a conductive trace and an insulative base to a semiconductor chip using multiple etch steps
US6872591B1 (en) 2000-10-13 2005-03-29 Bridge Semiconductor Corporation Method of making a semiconductor chip assembly with a conductive trace and a substrate
US6667229B1 (en) 2000-10-13 2003-12-23 Bridge Semiconductor Corporation Method of connecting a bumped compliant conductive trace and an insulative base to a semiconductor chip
US6492252B1 (en) 2000-10-13 2002-12-10 Bridge Semiconductor Corporation Method of connecting a bumped conductive trace to a semiconductor chip
US7132741B1 (en) 2000-10-13 2006-11-07 Bridge Semiconductor Corporation Semiconductor chip assembly with carved bumped terminal
US7075186B1 (en) 2000-10-13 2006-07-11 Bridge Semiconductor Corporation Semiconductor chip assembly with interlocked contact terminal
US6740576B1 (en) 2000-10-13 2004-05-25 Bridge Semiconductor Corporation Method of making a contact terminal with a plated metal peripheral sidewall portion for a semiconductor chip assembly
US7264991B1 (en) 2000-10-13 2007-09-04 Bridge Semiconductor Corporation Method of connecting a conductive trace to a semiconductor chip using conductive adhesive
US6949408B1 (en) 2000-10-13 2005-09-27 Bridge Semiconductor Corporation Method of connecting a conductive trace and an insulative base to a semiconductor chip using multiple etch steps
US7071089B1 (en) 2000-10-13 2006-07-04 Bridge Semiconductor Corporation Method of making a semiconductor chip assembly with a carved bumped terminal
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CN1051641C (zh) 2000-04-19
CN1153267C (zh) 2004-06-09
KR960028730A (ko) 1996-07-22
CN1130306A (zh) 1996-09-04
EP0720226A2 (en) 1996-07-03
US5686353A (en) 1997-11-11
KR100239286B1 (ko) 2000-01-15
CN1248062A (zh) 2000-03-22
DE69535551D1 (de) 2007-09-20
DE69535551T2 (de) 2008-04-30
EP0720226A3 (en) 1997-11-19
EP0720226B1 (en) 2007-08-08

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