TW274628B - - Google Patents

Info

Publication number
TW274628B
TW274628B TW083111160A TW83111160A TW274628B TW 274628 B TW274628 B TW 274628B TW 083111160 A TW083111160 A TW 083111160A TW 83111160 A TW83111160 A TW 83111160A TW 274628 B TW274628 B TW 274628B
Authority
TW
Taiwan
Application number
TW083111160A
Other languages
Chinese (zh)
Original Assignee
At & T Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by At & T Corp filed Critical At & T Corp
Application granted granted Critical
Publication of TW274628B publication Critical patent/TW274628B/zh

Links

Classifications

    • H10P36/00—
    • H10P36/07—
    • H10P90/1914—
    • H10W10/181—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/912—Charge transfer device using both electron and hole signal carriers
TW083111160A 1994-06-03 1994-11-30 TW274628B (OSRAM)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US25365794A 1994-06-03 1994-06-03

Publications (1)

Publication Number Publication Date
TW274628B true TW274628B (OSRAM) 1996-04-21

Family

ID=22961174

Family Applications (1)

Application Number Title Priority Date Filing Date
TW083111160A TW274628B (OSRAM) 1994-06-03 1994-11-30

Country Status (6)

Country Link
US (1) US5892292A (OSRAM)
JP (2) JPH07335654A (OSRAM)
KR (1) KR960002685A (OSRAM)
CN (1) CN1119341A (OSRAM)
DE (1) DE19519533B4 (OSRAM)
TW (1) TW274628B (OSRAM)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6008082A (en) 1995-09-14 1999-12-28 Micron Technology, Inc. Method of making a resistor, method of making a diode, and SRAM circuitry and other integrated circuitry
US5567644A (en) 1995-09-14 1996-10-22 Micron Technology, Inc. Method of making a resistor
US6093624A (en) * 1997-12-23 2000-07-25 Philips Electronics North America Corporation Method of providing a gettering scheme in the manufacture of silicon-on-insulator (SOI) integrated circuits
JP2000323484A (ja) * 1999-05-07 2000-11-24 Mitsubishi Electric Corp 半導体装置及び半導体記憶装置
US6508363B1 (en) 2000-03-31 2003-01-21 Lucent Technologies Slurry container
US20020140030A1 (en) * 2001-03-30 2002-10-03 Mandelman Jack A. SOI devices with integrated gettering structure
US6958264B1 (en) * 2001-04-03 2005-10-25 Advanced Micro Devices, Inc. Scribe lane for gettering of contaminants on SOI wafers and gettering method
US7045885B1 (en) 2004-12-09 2006-05-16 Hewlett-Packard Development Company, L.P. Placement of absorbing material in a semiconductor device

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US4178191A (en) * 1978-08-10 1979-12-11 Rca Corp. Process of making a planar MOS silicon-on-insulating substrate device
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JPS57162444A (en) * 1981-03-31 1982-10-06 Fujitsu Ltd Manufacture of semiconductor device
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US4631804A (en) * 1984-12-10 1986-12-30 At&T Bell Laboratories Technique for reducing substrate warpage springback using a polysilicon subsurface strained layer
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JPS6224854A (ja) * 1985-07-24 1987-02-02 Nippon Kokan Kk <Nkk> 真空ア−ク再溶解装置
JPS6276646A (ja) * 1985-09-30 1987-04-08 Toshiba Corp 半導体装置の製造方法
DD258681A1 (de) * 1986-04-02 1988-07-27 Erfurt Mikroelektronik Verfahren zum herstellen getterfaehiger und formstabiler halbleiterscheiben
JPS632370A (ja) * 1986-06-23 1988-01-07 Nissan Motor Co Ltd 半導体装置
US4732865A (en) * 1986-10-03 1988-03-22 Tektronix, Inc. Self-aligned internal mobile ion getter for multi-layer metallization on integrated circuits
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US4883215A (en) * 1988-12-19 1989-11-28 Duke University Method for bubble-free bonding of silicon wafers
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US5001075A (en) * 1989-04-03 1991-03-19 Motorola Fabrication of dielectrically isolated semiconductor device
US5164218A (en) * 1989-05-12 1992-11-17 Nippon Soken, Inc. Semiconductor device and a method for producing the same
JP2597022B2 (ja) * 1990-02-23 1997-04-02 シャープ株式会社 素子分離領域の形成方法
US5318919A (en) * 1990-07-31 1994-06-07 Sanyo Electric Co., Ltd. Manufacturing method of thin film transistor
JPH04363025A (ja) * 1991-01-28 1992-12-15 Mitsubishi Electric Corp 半導体装置及びその製造方法
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Also Published As

Publication number Publication date
JP2006324688A (ja) 2006-11-30
DE19519533A1 (de) 1995-12-07
US5892292A (en) 1999-04-06
DE19519533B4 (de) 2009-05-28
KR960002685A (ko) 1996-01-26
CN1119341A (zh) 1996-03-27
JPH07335654A (ja) 1995-12-22

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Legal Events

Date Code Title Description
MK4A Expiration of patent term of an invention patent