TW265477B - - Google Patents

Info

Publication number
TW265477B
TW265477B TW082102245A TW82102245A TW265477B TW 265477 B TW265477 B TW 265477B TW 082102245 A TW082102245 A TW 082102245A TW 82102245 A TW82102245 A TW 82102245A TW 265477 B TW265477 B TW 265477B
Authority
TW
Taiwan
Application number
TW082102245A
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Application granted granted Critical
Publication of TW265477B publication Critical patent/TW265477B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate
TW082102245A 1992-01-09 1993-03-25 TW265477B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US81915992A 1992-01-09 1992-01-09

Publications (1)

Publication Number Publication Date
TW265477B true TW265477B (zh) 1995-12-11

Family

ID=25227358

Family Applications (1)

Application Number Title Priority Date Filing Date
TW082102245A TW265477B (zh) 1992-01-09 1993-03-25

Country Status (5)

Country Link
US (2) US5384474A (zh)
JP (1) JPH07112049B2 (zh)
KR (1) KR970004952B1 (zh)
CN (2) CN100345305C (zh)
TW (1) TW265477B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6638814B1 (en) 1999-08-09 2003-10-28 Infineon Technologies Aktiengesellschaft Method for producing an insulation

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JPH06223568A (ja) * 1993-01-29 1994-08-12 Mitsubishi Electric Corp 中間電位発生装置
JPH07130871A (ja) * 1993-06-28 1995-05-19 Toshiba Corp 半導体記憶装置
US5598367A (en) * 1995-06-07 1997-01-28 International Business Machines Corporation Trench EPROM
US5731941A (en) * 1995-09-08 1998-03-24 International Business Machines Corporation Electrostatic discharge suppression circuit employing trench capacitor
US5614431A (en) * 1995-12-20 1997-03-25 International Business Machines Corporation Method of making buried strap trench cell yielding an extended transistor
US5908310A (en) * 1995-12-27 1999-06-01 International Business Machines Corporation Method to form a buried implanted plate for DRAM trench storage capacitors
US5717628A (en) * 1996-03-04 1998-02-10 Siemens Aktiengesellschaft Nitride cap formation in a DRAM trench capacitor
US5731619A (en) * 1996-05-22 1998-03-24 International Business Machines Corporation CMOS structure with FETS having isolated wells with merged depletions and methods of making same
EP0821409A3 (en) * 1996-07-23 2004-09-08 International Business Machines Corporation Collar etch method for DRAM cell
US5923971A (en) * 1996-10-22 1999-07-13 International Business Machines Corporation Reliable low resistance strap for trench storage DRAM cell using selective epitaxy
JPH10284591A (ja) * 1997-02-28 1998-10-23 Internatl Rectifier Corp 半導体装置及びその製造方法
US5885863A (en) * 1997-03-31 1999-03-23 Kabushiki Kaisha Toshiba Method of making a contact for contacting an impurity region formed in a semiconductor substrate
US6222254B1 (en) * 1997-03-31 2001-04-24 Intel Corporation Thermal conducting trench in a semiconductor structure and method for forming the same
US7067406B2 (en) * 1997-03-31 2006-06-27 Intel Corporation Thermal conducting trench in a semiconductor structure and method for forming the same
US6100131A (en) * 1997-06-11 2000-08-08 Siemens Aktiengesellschaft Method of fabricating a random access memory cell
TW425718B (en) * 1997-06-11 2001-03-11 Siemens Ag Vertical transistor
US6133597A (en) 1997-07-25 2000-10-17 Mosel Vitelic Corporation Biasing an integrated circuit well with a transistor electrode
US5843820A (en) * 1997-09-29 1998-12-01 Vanguard International Semiconductor Corporation Method of fabricating a new dynamic random access memory (DRAM) cell having a buried horizontal trench capacitor
JP3421230B2 (ja) * 1997-11-04 2003-06-30 株式会社日立製作所 半導体記憶装置およびその製造方法
US6236079B1 (en) * 1997-12-02 2001-05-22 Kabushiki Kaisha Toshiba Dynamic semiconductor memory device having a trench capacitor
US6040213A (en) * 1998-01-20 2000-03-21 International Business Machines Corporation Polysilicon mini spacer for trench buried strap formation
JP3231020B2 (ja) * 1998-08-06 2001-11-19 株式会社東芝 半導体装置
US6110792A (en) * 1998-08-19 2000-08-29 International Business Machines Corporation Method for making DRAM capacitor strap
TW406362B (en) * 1998-11-13 2000-09-21 United Microelectronics Corp Trio-well structure and the method for manufacturing the same
US6100200A (en) * 1998-12-21 2000-08-08 Advanced Technology Materials, Inc. Sputtering process for the conformal deposition of a metallization or insulating layer
DE19907174C1 (de) * 1999-02-19 2000-09-14 Siemens Ag Verfahren zum Herstellen einer DRAM-Zelle mit einem Grabenkondensator
SE519975C2 (sv) * 1999-06-23 2003-05-06 Ericsson Telefon Ab L M Halvledarstruktur för högspänningshalvledarkomponenter
US6229173B1 (en) 1999-06-23 2001-05-08 International Business Machines Corporation Hybrid 5F2 cell layout for buried surface strap aligned to vertical transistor
US6380575B1 (en) 1999-08-31 2002-04-30 International Business Machines Corporation DRAM trench cell
KR100473476B1 (ko) * 2002-07-04 2005-03-10 삼성전자주식회사 반도체 장치 및 그 제조방법
US6759699B1 (en) * 2003-04-22 2004-07-06 Taiwan Semiconductor Manufacturing Company Storage element and SRAM cell structures using vertical FETS controlled by adjacent junction bias through shallow trench isolation
TWI230456B (en) * 2003-05-14 2005-04-01 Promos Technologies Inc Shallow trench isolation and dynamic random access memory and fabricating methods thereof
US7005744B2 (en) * 2003-09-22 2006-02-28 International Business Machines Corporation Conductor line stack having a top portion of a second layer that is smaller than the bottom portion
DE102004023805B4 (de) * 2004-05-13 2007-03-08 Infineon Technologies Ag Herstellungsverfahren für eine Halbleiterstruktur mit integrierten Kondensatoren und entsprechende Halbleiterstruktur
JP2006093635A (ja) * 2004-09-27 2006-04-06 Toshiba Corp 半導体装置およびその製造方法
US7800184B2 (en) * 2006-01-09 2010-09-21 International Business Machines Corporation Integrated circuit structures with silicon germanium film incorporated as local interconnect and/or contact
CN100466231C (zh) * 2006-04-24 2009-03-04 联华电子股份有限公司 沟槽电容动态随机存取存储器元件及其制作方法
US8822287B2 (en) * 2010-12-10 2014-09-02 Samsung Electronics Co., Ltd. Methods of manufacturing semiconductor devices
CN102569427A (zh) * 2010-12-21 2012-07-11 上海华虹Nec电子有限公司 电压控制变容器及其制备方法
US8557657B1 (en) * 2012-05-18 2013-10-15 International Business Machines Corporation Retrograde substrate for deep trench capacitors
US20170373142A1 (en) * 2016-06-23 2017-12-28 Littelfuse, Inc. Semiconductor device having side-diffused trench plug
US10068912B1 (en) 2017-06-05 2018-09-04 Cypress Semiconductor Corporation Method of reducing charge loss in non-volatile memories

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US4829017A (en) * 1986-09-25 1989-05-09 Texas Instruments Incorporated Method for lubricating a high capacity dram cell
US4801988A (en) * 1986-10-31 1989-01-31 International Business Machines Corporation Semiconductor trench capacitor cell with merged isolation and node trench construction
US4918502A (en) * 1986-11-28 1990-04-17 Hitachi, Ltd. Semiconductor memory having trench capacitor formed with sheath electrode
JPS63158869A (ja) * 1986-12-23 1988-07-01 Oki Electric Ind Co Ltd 半導体メモリ装置
DE3851649T2 (de) * 1987-03-20 1995-05-04 Nec Corp Aus einer Vielzahl von Eintransistorzellen bestehende dynamische Speichervorrichtung mit wahlfreiem Zugriff.
JPS63245954A (ja) * 1987-04-01 1988-10-13 Hitachi Ltd 半導体メモリ
US4912054A (en) * 1987-05-28 1990-03-27 Texas Instruments Incorporated Integrated bipolar-CMOS circuit isolation process for providing different backgate and substrate bias
US4794434A (en) * 1987-07-06 1988-12-27 Motorola, Inc. Trench cell for a dram
JPS6430259A (en) * 1987-07-24 1989-02-01 Fujitsu Ltd Semiconductor device
KR910000246B1 (ko) * 1988-02-15 1991-01-23 삼성전자 주식회사 반도체 메모리장치
JPH01227468A (ja) * 1988-03-08 1989-09-11 Oki Electric Ind Co Ltd 半導体記憶装置
JPH0228367A (ja) * 1988-07-18 1990-01-30 Hitachi Ltd 半導体記憶装置
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US5021852A (en) * 1989-05-18 1991-06-04 Texas Instruments Incorporated Semiconductor integrated circuit device
JPH04347592A (ja) * 1991-05-24 1992-12-02 Hitachi Ltd 電動機の駆動装置
US5250829A (en) * 1992-01-09 1993-10-05 International Business Machines Corporation Double well substrate plate trench DRAM cell array
US5264716A (en) * 1992-01-09 1993-11-23 International Business Machines Corporation Diffused buried plate trench dram cell array

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6638814B1 (en) 1999-08-09 2003-10-28 Infineon Technologies Aktiengesellschaft Method for producing an insulation

Also Published As

Publication number Publication date
CN1051172C (zh) 2000-04-05
US5384474A (en) 1995-01-24
CN1256519A (zh) 2000-06-14
CN1076550A (zh) 1993-09-22
KR970004952B1 (ko) 1997-04-10
JPH05283639A (ja) 1993-10-29
CN100345305C (zh) 2007-10-24
JPH07112049B2 (ja) 1995-11-29
US5521115A (en) 1996-05-28
KR930017185A (ko) 1993-08-30

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