TW252969B - - Google Patents

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TW252969B
TW252969B TW083101305A TW83101305A TW252969B TW 252969 B TW252969 B TW 252969B TW 083101305 A TW083101305 A TW 083101305A TW 83101305 A TW83101305 A TW 83101305A TW 252969 B TW252969 B TW 252969B
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atoms
silicon
ceramic
oxygen
nitrogen
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TW083101305A
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Philips Electronics Nv
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Description

經濟部中央標準局®:工消费合作社印裂 C52S69 A7 _B7五、發明説明（） 本發明係有闞一種陶瓷η。本發明亦有u—種製逭μ瓷 體之方法。 陶瓷《具有使其瑭用於許多應用上之特殊性質。例如* 呈塊狀或棒狀形式之陶瓷«可用來例如作為酎火材料。» 瓷«之另一非常重要的用途係其可使用作為載艚或基質。 此等基霣通常由一薄暦經燒结》瓷材料（譬如氣化鋁 UU〇3)，氧化棋（MgO) ·氣化跛（BeO)，氮化«(AIM) 或碳化矽（Si C))所姐成。由於其有利之《嫌性質·因此此 種基霣被用於鈍態及活性霣子元件中·譬如霣阻器•霣容 器，變壓器及動力霣晶》。 巳知陶瓷《通常表現出許多有利及許多不利性質之结合 。例如，相當不純之氧化IB及氧化錤基質具有經濟之優點 。然而，此種基質具有相當低劣之熱傅導。由於該低劣之 熱傅導使其不迪用於作為其中會發生高熱霣子元件中之基 質材料|此热必定會經由該基霣而敗逸。此等《化»瓷材 料之另一缺點是•其具有相當高的膨脹係數•致使該等材 料較不«用於許多懕用中*尤其是矽半導體科學技術方面 。矽的膨脹係數在4到5 ppi/k之範圃間。 氧化跛、氮化鋁及碳化矽具有适較氧化梠及氧化鎂為离 之热傳専•因而較*合作為霣子元件中之热散逸基質或* 受热器# 。除此之外，氮化鋁及磺化矽之Λ瓷嬲具有輿矽 較為相當之朦腺偽數•如此使得其等較遘合作為矽半等》 科學技術中之基質。然而，由於不良再現性及輿純度有醐 之問題使得»瓷氰化鋁技術為困雞的。结果•純氮化鋁Μ (讀先閲讀背面之注意事項再填寫本頁) -3- 本紙張尺度逋用申國國家標率（CNS ) Α4规格（210X297公釐） 83. 3. 10,000 經濟部中央標準局貝工消費合作杜印製 C52S69 A7 _B7五、發明説明（） 瓷基質即為相當地昂貴。碾化矽陶瓷基霣亦相當昂貴，因 為該物質為困雞作業者。除此之外，»|瓷碳化矽具有相當 高的介霣常數，使得該物質相當不適合作為霣子元件中之 基S。最後•氣化鋇陶瓷《具有為毒性之顧要缺貼。 本發明目的為提供结合有相當優良之熱傅導輿相當籣易 且經濟作業技術之陶瓷Μ。該所希W瓷體應該一方面具有 較不鈍氧化鋁及氣化鎂頗高之热傅等及較低之誨脹係敝。 另一方面，該所希陶瓷《之製造必摒較陶耷氰化《者籣易 及經濟許多。根據本發明之Λ瓷麵必定進一步具有相當低 的介霣常數。 本發明之此等及其它目的可由係Μ根據本發明為特激之 陶瓷拥所達成，因為該物體包含20-30原子X的錤* 20-30原子X的矽，40-60原子X的氮及最多15原子X的氧。 與習常之氧化鋁及氣化鎂相較下•上述姐成之_瓷«具 有相當低的热傳導。另者•本發明材質之膨脹係數《較該 氧化陶瓷》者為低。根據本發明之材質之製造為非常具有 再現性者*並且與氮化鋁和碳化矽比較下係相當纆濟者。 與»化鋁大大不同的是·根據本發明之_瓷嬲進一步具有 令人滿意之超酿溶液抗力。本發明陶瓷《另外具有相當低 之剛性，優良熱®擊抗力和相當低的介電常數。 除上述構成元素Mg, Si, Ν及0Κ外，根據本發明之陶瓷 艟可包含其它譬如Ca及Be之元素。該»瓷«之橛械及《子 性質會受到因混有相當少悬之該等元素之影響。然而頃發 現•包含低於20原子χ或高於30原子X鎂或矽之陶瓷_中 (請先M讀背面之注意事項再填寫本頁) -裝· 訂 線 -4- 本紙張尺度遑用+國國家搮率（CNS ) Α4規格（210X297公釐） 83. 3. 10,000 252S69 A7 B7 經濟部中央梂準局員工消費合作杜印製 五、發明説明（） •不同相物質之份置如此之大使得此種陶瓷嫌之機械與霄 的性質不良到令人無法接受。徜若該_瓷《中之氧含量超 «15原子X時*热傅等則不敷所欲之用途。 根據本發明》棄雅之較佳具體貢腌例之特微在於•該物 Λ之姐成相當於化學式MgSiNz-eCU，此處X小於0.5 。該 姐成之陶瓷Η具有最高的热傳導。此可《因於陶瓷Η中不 含不均摻雄劑之故·該摻辕_會促進不良热傅導支相之形 成。由於晶粒間界上少量第二相之存在*因此Mg: Si: »(♦0= 1: 1: 2比例之稍許誤差本身是可能的。然而•該化 學計黴姐成之僱雕最軚每一元索而言阃不可超遢5原子X 。具有鴒饑該化學計量比例之小誤差之陶瓷材料經設想係 可滿足該化學式之姐成。 頃發現該陶笼體中所存在之氧含量係反比於該物II之热 傅導。因此•目禰在於要將該_瓷牖中之氧含量降到最低 。該陶瓷體較佳為包含低於10原子X的氣。倘若根據本發 明之陶瓷《包含低於5原子X氧時可獲得愈高的热傅等。 本發明亦有Μ製造W瓷體之方法。第一種方法之特微在 於包含20-30原子X的錤，20-30原孑X的矽，40-60原 子X的《及最多15原子X的氧的鎂-矽-氮粉末被強化成 棋製產品，該產品接著于檐性大氣中· 1400-1600*0瀵度 範圃下»燒结成為一»瓷《。第二種方法之特缴在於，包 含20-30原子X的錤，20-30原子X的矽· 40-60原子X 的氮及ft高15原子X的氣的錤-矽-氮粉末于1400-1600 C溫度範圔間加以热*。本發明方法之一較佳具《實豳例 (請先Μ讀背面之注意事項再填寫本頁) 裝-
、1T 線 本紙張尺度遑用中國國家標率（CNS ) A4規格（210X297公釐〉 83. 3. 10,000 252S6Q , A7 經濟部中央橾準局貝工消费合作社印製 五、發明説明（） 之特激在於·該粉末之姐成相當於化學式MgSiN2-»〇M，此 處X小於0.5 。經査MgSiN2粉末之製備輿該化合物之晶艚 结構本身由 Bull. Soc. fr. Mineral. Cristallogr. 9_3_ 153-159 (1970)係已知者。 頃發琨·K根據本發明方法所製得ft瓷Μ於熵结作業中 為實霣上經完全強化者。該陶瓷Μ之相對密度為95Χ或Μ 上。利用（均衡）加颳或膠態《濾方式•該粉末可強化為 一橫製產品。較佳者為使用ft氣為檐性氣艚。根據本發明 之Μ瓷體較佳為呈基質之形式。最高密度可經由热壓而達 成，所產生密度為99Χ或更多。 本發明將利用例示具體實豳例及·式作較為詳细之銳明 •其中 唯一之附黼係顯示根據本發明m瓷體之X-射嫌期射式 〇 將以3好2粉末（〇6「3(；*99.9!«纯）及非晶形5丨3»^粉末 (Sylvania, Sn 402)之化學計量混合物充份混合•並接 著置於一種氣化鋁坩雄上。該坩蝸經《當之封閉Μ防止 Mg3M2蒸«。將包括其内含物之坩鑷于氮大氣、1250 Ό下 腌Μ热《理靥時16小時。冷卻後，于球膺中研磨該混合物 同時排除氧氣直到獲得平均粒子大小大約為1微米之該物 質為止。由X-射蠊《射式（未予顧示）看來，可推得該 粉末係由實質上純單一相之》48 51»12所姐成》其中存在之少 量MgO及ot -SUN 4為支相者。氧的存在可能係因非晶形 SUfU受污染所致。 -6- 本纸張尺度逋用中國國家揉率（CNS ) A4規格（210X297公釐〉 83. 3.10,000 I --------^I 裝-- (請先閲讀背面之注意事項再填舄本頁) 線 A7 經濟部中央揉準局貝工消费合作杜印製
_ B7五、發明説明（） 利用緻密化作用可將該粉末轉換為棋製產品。可使用二 種緻密化方法。根據第一種方法為製造30毫米厚度及6 m 米截面之壓片。該方法中，將多量粉末于室溫下分別以5 和2 00 MPa之懕力均衡懕縮。該横製產品之密度為理諭上 最大密度之50X 。根據第二種方法製造厚度為2毫米之薄 腫基質。該方法中•将所得多量粉末分敗于乙酵中，其後 將該分敗液于一《濾器上加以排水。由此形成之薄靥接著 于一相當高湛及低於一大氣K下乾»。該棋製衋品之密度 大約為理諭最高密度之50X 。 將由此製得之棋製產品置于另外含有多量上述粉末之 Ho坩鍋中。然後以氬氣填充坩鑷並加Μ密封。接蓍•瀝時 5小時將坩鑷加热至1550 t：之濩度並緊接著予Μ冷卻。加 热速率為1000 t： /小時而冷却速率為200它/小時。 經燒结棋製產品之姐成接著以元素分析方式決定。此姐 成相當於化學式》81.〇〇51〇.〇7»<1.770〇.1〇。該_瓷*之密 度為3.11克/立方公分。Μ計算所得3.128克/立方公分 之最大理論密度為基準下代表根據本發明陶瓷驩具有密度 為 99.4Χ ° 于另一實驗中利用热懕法製造MsSiH2»!8«。該寅«中 ，使用與上述實驗相同之粉末。將該粉末導入包含石墨棋 之热懕檐中（HP20; Thernal Technology Ind.)。于 1 4 0 0 - 1 6 0 0它範麵之溫度及7 5 Μ P a懕力下擠*粉末歷時2 小時進行堍结步》。該經熵结物質之密度為最大理論密度 之99H ---------一—装------訂---------「線 (請先閱讀背面之注意事項再填寫本頁) -7- 本紙張尺度逍用申國國家揉準（CNS ) A4规格（210X297公釐） 83. 3. 10,000
S
8 6 9 9J Β7 五、發明説明（） 圈中顧示根據本發明之陶瓷體之X-射繚编射光譜。由該 光譜可推知此陶瓷《為實質上單相者·Μ及可推知有少量 Mg2Si04和/3 -SUIU存在於該_瓷《中。其含量小於5原 子X 。 _ MgSiN2 aj2o3 AiN a(MPa) 240-270 450 340 E(GPa) 235 398 315 »/㈠ 0.232 、 0.235 0.245 o (IQr6 K·1) 5.8 7.9 4.8 /( (W/m-K) 17 10 150 R(K) 130-150 110 170 R，（kW/m) 2.2-2.5 2.2 2.5 Kle(MPa-m 勹 3.2-4.3 4-5 2.7 H(GPa) 14.2-15.9 19.5 ' 12 ---------X*衣-- { (請先Μ讀背面之注意事項再填寫本頁) 訂 線 經濟部中央橾準局負工消費合作社印製 除巳知的_瓷材料氣化鋁和氮化鋁之性»外•此表格亦 列示有根據本發明陶瓷《之許多性霣。該所测得性質係有 鼸強度σ，楊格棋數Ε ，横向收嫌常數υ ·热膨脹係數α ，热傅導係數k ，破裂韌性或撕裂強度，以及硬度Η 本紙乐尺度逋用申國國家標準（CNS ) Α4規格（210X297公釐） 83. 3. 10,000 252969 A7 B7 五、發明説明（） 參數R與！TKR=(li)a/E.a 定義，且R'=k.R.。此等 參數分別顯示實質熱轉移U)及中度熱轉移（R’）之熱衝擊 抗力。 結果為根據本發明之陶瓷體结合了許多令人滿意的性質 。一方面，根據本發明物體之膨脹係數低於便宜之氧化鋁 。另一方面，根據本發明陶瓷體之加工作業較氮化鋁簡易 且經濟。 圖式夕簡塱銳明 圖1為本-發明之陶瓷體之X -射線繞射圖。 (請先閱讀背面之注意事項再塡寫本頁) 裝 訂 線 經濟部中央樣準局員工消費合作杜印製 -9 - 本紙張尺度適用中國國家標準（CNS)A4规格（210 X 297公釐） 83.3.10,000

Claims (1)

  1. Χ· ~種陶瓷«•其特激在於該物_包含20-30原子ίί的錤 • 20-30原子X的矽· 40-60原子X的氮及最多15原子 X的氧。 2· 根據申謫専利範圏第1項之陶爱》•其特微在於該陶瓷 賴相當於化學式MgSiN2-«0x，此處X小於0.5。 3· 根據申諫專利範麵第1或2項之Μ瓷Μ ·該物應為呈基 質形式者。 4· 一種製造根據申請專利範鼷第1，2或3項之Μ瓷Μ之方 法*其特激在於將包含20-30原子X的鎂· 20-30原子 X的矽，40-60原子X的氮及最高15原子X的氧的錤_ 矽-氮粉末強化成為一棋製產品*接著將該棋製產品于 憮性大氣中，1400-1600 Ό 邋度範園下嫌结成一種»瓷 嫌。 5. 根據申請專利範圃第4項之方法·其特》在於該粉末之 姐成相當於化學式MgSiNz-xO»··此處X小於0.5。 6·—種製造根據申講専利範顧第1· 2或3項之Μ瓷麵之方 法，其特激在於將包含20-30原子X的錤，20-30原子 X的矽· 40-60原子X的氮及最高15原子X的氧于 1400-1600t：漘度範圃下予Μ热JK。 衫濟部t央標準局員工消f合作社印装 (請先閲讀背面之注意事項再填寫本頁) 7. 根據申請專利範園第6項之方法，其特徽在於該粉末之 姐成相當於化學式MgSiH2-*0« ·此處X小於0.5。 本紙张尺度適用中國國家標窣（CNS ) A4現格（210X297公釐）
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