TW231363B - - Google Patents

Info

Publication number
TW231363B
TW231363B TW080109518A TW80109518A TW231363B TW 231363 B TW231363 B TW 231363B TW 080109518 A TW080109518 A TW 080109518A TW 80109518 A TW80109518 A TW 80109518A TW 231363 B TW231363 B TW 231363B
Authority
TW
Taiwan
Application number
TW080109518A
Original Assignee
Gold Star Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gold Star Co filed Critical Gold Star Co
Application granted granted Critical
Publication of TW231363B publication Critical patent/TW231363B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
    • H01L28/86—Electrodes with an enlarged surface, e.g. formed by texturisation having horizontal extensions
    • H01L28/87—Electrodes with an enlarged surface, e.g. formed by texturisation having horizontal extensions made by depositing layers, e.g. by depositing alternating conductive and insulating layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H10B12/318—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor the storage electrode having multiple segments

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
TW080109518A 1991-02-18 1991-12-03 TW231363B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019910002580A KR920017248A (ko) 1991-02-18 1991-02-18 반도체 메모리 소자의 커패시터 제조방법

Publications (1)

Publication Number Publication Date
TW231363B true TW231363B (zh) 1994-10-01

Family

ID=19311191

Family Applications (1)

Application Number Title Priority Date Filing Date
TW080109518A TW231363B (zh) 1991-02-18 1991-12-03

Country Status (5)

Country Link
US (1) US5290726A (zh)
JP (1) JPH0715950B2 (zh)
KR (1) KR920017248A (zh)
DE (1) DE4201506C2 (zh)
TW (1) TW231363B (zh)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5880036A (en) * 1992-06-15 1999-03-09 Micron Technology, Inc. Method for enhancing oxide to nitride selectivity through the use of independent heat control
KR960003004B1 (ko) * 1992-10-07 1996-03-02 금성일렉트론주식회사 반도체 메모리셀의 캐패시터 전극 제조방법
US5438009A (en) * 1993-04-02 1995-08-01 United Microelectronics Corporation Method of fabrication of MOSFET device with buried bit line
KR0151196B1 (ko) * 1994-01-12 1998-10-01 문정환 반도체 메모리장치의 제조방법
JPH07263576A (ja) * 1994-03-25 1995-10-13 Hitachi Ltd 半導体集積回路装置およびその製造方法
US5436186A (en) * 1994-04-22 1995-07-25 United Microelectronics Corporation Process for fabricating a stacked capacitor
US5436188A (en) * 1994-04-26 1995-07-25 Industrial Technology Research Institute Dram cell process having elk horn shaped capacitor
CN1044948C (zh) * 1994-06-22 1999-09-01 现代电子产业株式会社 用于制造半导体器件叠层电容器的方法
US5661064A (en) * 1995-11-13 1997-08-26 Micron Technology, Inc. Method of forming a capacitor having container members
US5637523A (en) * 1995-11-20 1997-06-10 Micron Technology, Inc. Method of forming a capacitor and a capacitor construction
US6218237B1 (en) 1996-01-03 2001-04-17 Micron Technology, Inc. Method of forming a capacitor
TW363216B (en) * 1996-05-06 1999-07-01 United Microelectronics Corp Manufacturing method of capacitor used for DRAM
US5926718A (en) * 1996-08-20 1999-07-20 Micron Technology, Inc. Method for forming a capacitor
DE19640271C1 (de) 1996-09-30 1998-03-05 Siemens Ag Verfahren zur Herstellung einer integrierten Halbleiterspeicheranordnung
US6541812B2 (en) 1998-06-19 2003-04-01 Micron Technology, Inc. Capacitor and method for forming the same
US6214687B1 (en) 1999-02-17 2001-04-10 Micron Technology, Inc. Method of forming a capacitor and a capacitor construction
EP1363565A2 (en) * 2000-08-08 2003-11-26 SDGI Holdings, Inc. Implantable joint prosthesis
US8169014B2 (en) * 2006-01-09 2012-05-01 Taiwan Semiconductor Manufacturing Co., Ltd. Interdigitated capacitive structure for an integrated circuit
US20090096003A1 (en) * 2007-10-11 2009-04-16 International Business Machines Corporation Semiconductor cell structure including buried capacitor and method for fabrication thereof
US11139368B2 (en) 2019-10-01 2021-10-05 HeFeChip Corporation Limited Trench capacitor having improved capacitance and fabrication method thereof
US11114442B2 (en) 2019-12-12 2021-09-07 HeFeChip Corporation Limited Semiconductor memory device with shallow buried capacitor and fabrication method thereof
US11296090B2 (en) 2019-12-12 2022-04-05 HeFeChip Corporation Limited Semiconductor memory device with buried capacitor and fin-like electrodes
US11322500B2 (en) 2020-07-28 2022-05-03 HeFeChip Corporation Limited Stacked capacitor with horizontal and vertical fin structures and method for making the same

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS602784B2 (ja) * 1982-12-20 1985-01-23 富士通株式会社 半導体記憶装置
US4649406A (en) * 1982-12-20 1987-03-10 Fujitsu Limited Semiconductor memory device having stacked capacitor-type memory cells
JPH0618257B2 (ja) * 1984-04-28 1994-03-09 富士通株式会社 半導体記憶装置の製造方法
US4614564A (en) * 1984-12-04 1986-09-30 The United States Of America As Represented By The United States Department Of Energy Process for selectively patterning epitaxial film growth on a semiconductor substrate
JPS6379327A (ja) * 1986-09-24 1988-04-09 Hitachi Ltd 半導体集積回路装置の製造方法
JP2569048B2 (ja) * 1987-05-27 1997-01-08 株式会社日立製作所 半導体メモリの製造方法
DE3856143T2 (de) * 1987-06-17 1998-10-29 Fujitsu Ltd Verfahren zum Herstellen einer dynamischen Speicherzelle mit wahlfreiem Zugriff
KR910009805B1 (ko) * 1987-11-25 1991-11-30 후지쓰 가부시끼가이샤 다이나믹 랜덤 액세스 메모리 장치와 그의 제조방법
JP2590171B2 (ja) * 1988-01-08 1997-03-12 株式会社日立製作所 半導体記憶装置
JPH02142161A (ja) * 1988-11-22 1990-05-31 Mitsubishi Electric Corp 半導体装置
JP2777896B2 (ja) * 1989-01-20 1998-07-23 富士通株式会社 半導体記憶装置
JPH0824169B2 (ja) * 1989-05-10 1996-03-06 富士通株式会社 半導体記憶装置の製造方法
US4902377A (en) * 1989-05-23 1990-02-20 Motorola, Inc. Sloped contact etch process

Also Published As

Publication number Publication date
JPH0563154A (ja) 1993-03-12
DE4201506C2 (de) 1995-07-20
KR920017248A (ko) 1992-09-26
US5290726A (en) 1994-03-01
JPH0715950B2 (ja) 1995-02-22
DE4201506A1 (de) 1992-08-20

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