TW228609B - - Google Patents

Info

Publication number
TW228609B
TW228609B TW083101676A TW83101676A TW228609B TW 228609 B TW228609 B TW 228609B TW 083101676 A TW083101676 A TW 083101676A TW 83101676 A TW83101676 A TW 83101676A TW 228609 B TW228609 B TW 228609B
Authority
TW
Taiwan
Application number
TW083101676A
Other languages
Chinese (zh)
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Application granted granted Critical
Publication of TW228609B publication Critical patent/TW228609B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H10D30/0323—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon comprising monocrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6735—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes having gates fully surrounding the channels, e.g. gate-all-around
    • H10P14/416—
    • H10P90/1906—
    • H10W10/181—
TW083101676A 1993-02-17 1994-02-28 TW228609B (OSRAM)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019930002208A KR960002088B1 (ko) 1993-02-17 1993-02-17 에스오아이(SOI : silicon on insulator) 구조의 반도체 장치 제조방법

Publications (1)

Publication Number Publication Date
TW228609B true TW228609B (OSRAM) 1994-08-21

Family

ID=19350912

Family Applications (1)

Application Number Title Priority Date Filing Date
TW083101676A TW228609B (OSRAM) 1993-02-17 1994-02-28

Country Status (7)

Country Link
US (1) US5482877A (OSRAM)
EP (1) EP0612103B1 (OSRAM)
JP (1) JP2687091B2 (OSRAM)
KR (1) KR960002088B1 (OSRAM)
CN (1) CN1042578C (OSRAM)
DE (1) DE69431770T2 (OSRAM)
TW (1) TW228609B (OSRAM)

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DE19924571C2 (de) * 1999-05-28 2001-03-15 Siemens Ag Verfahren zur Herstellung eines Doppel-Gate-MOSFET-Transistors
DE19928564A1 (de) * 1999-06-22 2001-01-04 Infineon Technologies Ag Mehrkanal-MOSFET und Verfahren zu seiner Herstellung
US6320228B1 (en) 2000-01-14 2001-11-20 Advanced Micro Devices, Inc. Multiple active layer integrated circuit and a method of making such a circuit
FR2806833B1 (fr) * 2000-03-27 2002-06-14 St Microelectronics Sa Procede de fabrication d'un transistor mos a deux grilles, dont l'une est enterree, et transistor correspondant
US6743680B1 (en) 2000-06-22 2004-06-01 Advanced Micro Devices, Inc. Process for manufacturing transistors having silicon/germanium channel regions
US6429484B1 (en) 2000-08-07 2002-08-06 Advanced Micro Devices, Inc. Multiple active layer structure and a method of making such a structure
JP4943576B2 (ja) * 2000-10-19 2012-05-30 白土 猛英 Ｍｉｓ電界効果トランジスタ及びその製造方法
US6709935B1 (en) 2001-03-26 2004-03-23 Advanced Micro Devices, Inc. Method of locally forming a silicon/geranium channel layer
DE10208881B4 (de) * 2002-03-01 2007-06-28 Forschungszentrum Jülich GmbH Selbstjustierendes Verfahren zur Herstellung eines Doppel-Gate MOSFET sowie durch dieses Verfahren hergestellter Doppel-Gate MOSFET
FR2838238B1 (fr) * 2002-04-08 2005-04-15 St Microelectronics Sa Dispositif semiconducteur a grille enveloppante encapsule dans un milieu isolant
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US6909186B2 (en) * 2003-05-01 2005-06-21 International Business Machines Corporation High performance FET devices and methods therefor
JP4000087B2 (ja) * 2003-05-07 2007-10-31 株式会社東芝 半導体装置およびその製造方法
US7456476B2 (en) * 2003-06-27 2008-11-25 Intel Corporation Nonplanar semiconductor device with partially or fully wrapped around gate electrode and methods of fabrication
US6909151B2 (en) * 2003-06-27 2005-06-21 Intel Corporation Nonplanar device with stress incorporation layer and method of fabrication
KR101012950B1 (ko) * 2003-10-15 2011-02-08 삼성전자주식회사 유기 절연체 형성용 조성물 및 이를 이용하여 제조된 유기절연체
US7268058B2 (en) * 2004-01-16 2007-09-11 Intel Corporation Tri-gate transistors and methods to fabricate same
US7312125B1 (en) 2004-02-05 2007-12-25 Advanced Micro Devices, Inc. Fully depleted strained semiconductor on insulator transistor and method of making the same
US7154118B2 (en) * 2004-03-31 2006-12-26 Intel Corporation Bulk non-planar transistor having strained enhanced mobility and methods of fabrication
US7042009B2 (en) 2004-06-30 2006-05-09 Intel Corporation High mobility tri-gate devices and methods of fabrication
US7348284B2 (en) * 2004-08-10 2008-03-25 Intel Corporation Non-planar pMOS structure with a strained channel region and an integrated strained CMOS flow
US7422946B2 (en) * 2004-09-29 2008-09-09 Intel Corporation Independently accessed double-gate and tri-gate transistors in same process flow
US7332439B2 (en) * 2004-09-29 2008-02-19 Intel Corporation Metal gate transistors with epitaxial source and drain regions
US7361958B2 (en) * 2004-09-30 2008-04-22 Intel Corporation Nonplanar transistors with metal gate electrodes
US20060086977A1 (en) 2004-10-25 2006-04-27 Uday Shah Nonplanar device with thinned lower body portion and method of fabrication
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US20070090416A1 (en) * 2005-09-28 2007-04-26 Doyle Brian S CMOS devices with a single work function gate electrode and method of fabrication
US20070090408A1 (en) * 2005-09-29 2007-04-26 Amlan Majumdar Narrow-body multiple-gate FET with dominant body transistor for high performance
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JP4525928B2 (ja) 2005-12-27 2010-08-18 セイコーエプソン株式会社 半導体装置の製造方法
US8143646B2 (en) 2006-08-02 2012-03-27 Intel Corporation Stacking fault and twin blocking barrier for integrating III-V on Si
US20080157225A1 (en) * 2006-12-29 2008-07-03 Suman Datta SRAM and logic transistors with variable height multi-gate transistor architecture
EP2070533B1 (en) * 2007-12-11 2014-05-07 Apoteknos Para La Piel, s.l. Use of a compound derived from P-hydroxyphenyl propionic acid for the treatment of psoriasis
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JP5650576B2 (ja) * 2011-03-31 2015-01-07 猛英 白土 半導体装置及びその製造方法
JP5905752B2 (ja) * 2012-03-16 2016-04-20 猛英 白土 半導体装置及びその製造方法
JP6155911B2 (ja) * 2013-07-04 2017-07-05 三菱電機株式会社 半導体装置
JP6281420B2 (ja) * 2014-06-10 2018-02-21 富士通セミコンダクター株式会社 半導体装置の製造方法
US10833175B2 (en) * 2015-06-04 2020-11-10 International Business Machines Corporation Formation of dislocation-free SiGe finFET using porous silicon
CN111370306B (zh) * 2018-12-26 2023-04-28 中芯集成电路（宁波）有限公司上海分公司 晶体管的制作方法及全包围栅极器件结构

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JPH02302044A (ja) * 1989-05-16 1990-12-14 Fujitsu Ltd 半導体装置の製造方法
NL8902372A (nl) * 1989-09-21 1991-04-16 Imec Inter Uni Micro Electr Werkwijze voor het vervaardigen van een veldeffecttransistor en halfgeleiderelement.
JP2603886B2 (ja) * 1991-05-09 1997-04-23 日本電信電話株式会社 薄層ｓｏｉ型絶縁ゲート型電界効果トランジスタの製造方法

Also Published As

Publication number Publication date
DE69431770D1 (de) 2003-01-09
CN1095860A (zh) 1994-11-30
EP0612103A3 (en) 1996-08-28
JPH06252403A (ja) 1994-09-09
JP2687091B2 (ja) 1997-12-08
KR960002088B1 (ko) 1996-02-10
DE69431770T2 (de) 2003-09-18
EP0612103A2 (en) 1994-08-24
KR940020594A (ko) 1994-09-16
EP0612103B1 (en) 2002-11-27
CN1042578C (zh) 1999-03-17
US5482877A (en) 1996-01-09

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