TW203143B - - Google Patents

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Publication number
TW203143B
TW203143B TW080109924A TW80109924A TW203143B TW 203143 B TW203143 B TW 203143B TW 080109924 A TW080109924 A TW 080109924A TW 80109924 A TW80109924 A TW 80109924A TW 203143 B TW203143 B TW 203143B
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TW
Taiwan
Prior art keywords
shadow mask
boron
vapor deposition
boron nitride
nitride layer
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Application number
TW080109924A
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English (en)
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Samsung Electronic Devices
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Publication of TW203143B publication Critical patent/TW203143B/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
    • H01J29/06—Screens for shielding; Masks interposed in the electron stream
    • H01J29/07—Shadow masks for colour television tubes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0641—Nitrides
    • C23C14/0647—Boron nitride
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
    • C23C28/32—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer
    • C23C28/322—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer only coatings of metal elements only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
    • C23C28/34—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/02—Pretreatment of the material to be coated
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/80—After-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/14—Manufacture of electrodes or electrode systems of non-emitting electrodes
    • H01J9/142—Manufacture of electrodes or electrode systems of non-emitting electrodes of shadow-masks for colour television tubes
    • H01J9/144—Mask treatment related to the process of dot deposition during manufacture of luminescent screen

Description

A6 B6 03143 五、發明説明（） (請先閱讀背面之注意事項再填窝本頁) 本發明偽有關於一種陰極射線管之蔭罩抗起泡（現象） 材料的蒸鍍方法。 蔭罩是一種在板面上開有無數可通過電子束之開口的 東西，藉框架設置於陰極射線管面部之内側。 由電子鎗射出之電子束通過蔭罩並著陸於面部内側面 所塗佈之螢光體而形成畫素，在此過程中有一部份之電子 束與薩罩撞擊，致蔭罩産生熱膨脹，而以所諝「起泡現象 」之形態發生變形。 前述起泡現象之结果將使蔭罩開口偏離電子束放射_ 經路，致呈現駸重之畫質劣化的情形，過去為對付此起泡. 現象，乃於面部内侧裝設框架時懸垂設置一鉤彈簧以防蔭 罩之起泡變形β 然而此種方法卻無法根本解決起泡現象。 根本解決蔭罩起泡現象之方法是以熱膨脹傜數極低之 殷銅（invar)製造窿罩。 但，由於殷鋼成形性不佳，製造困難，成本高，此為 其缺點。 卩/& 在美國專利第4,442 , 3 76號中以重金1#^覆於蔭罩畫 r 一·'*.‘ 經濟部中央標準局貝工消費合作社印製 面及相反之面上，藉此令撞擊於蔭罩之電子反射，而使前 述蔭罩不致熱膨脹。 不過，採這種方式仍無法防止彩色陰極射線管内部輻 射熱所引起之薩罩熱膨驅。 為改善前述之諸般問題，最近乃有人試著在蔭罩表面 被覆抗起泡（現象）材料。 3 本紙張尺度逍用中國國家樣準(CNS)甲4規格(210父297公婕) 3 4 i 3 .0 2
66 AB 五、發明説明（
經濟部中央標準局员工消費合作社印製 此處所用之抗起泡材料可抑制蔭罩起泡變形所引起朝 反方向之熱膨脹或蔭罩之起泡變形。 靡合作為抗起泡材料之物質，具高熱膨脹係數之鋁固1 已公知，唯，如本發明般具低熱膨脹係數之氮化礪陶瓷則 未為人所知，且以鋁作為抗起泡材料時，曝露於大氣中易 發生氧化，因此以気化《陶瓷較爲槿定。 然而，氮化硼陶瓷之沸點在3QQC°C以上，於是乎乃有 實際上需有耐高熱設備，甚至採蒸鍍工法時亦有諸多技術 上之難點，不合實用....之問題。 :因此本-發明之目的.在提供一耱.蒸鍍蔭罩之抗起泡材 料的方法，依該方法可在蔭罩上蒸鍍氮化硼；又依該方法 可較簡單地在硼之蒸鍍過程中注入氮令其反應而獲得氮化 硼，進而由於硼之融點為2300Ό、沸點為2550°C,比起氮 ..化硼陶瓷，處理甚為容易。, 本案發明人注目於氮化硼之存在，以其可取代m it硼 哼瓷作為抗起泡材料之待質而完成本發明。 本發明之特猷偽在5X 10· 5托之真空琛境下，以2500 〜260之溫度將硼加熱12〜20秒之時間而在蔭罩上蒸鍍 1 um厚度之硼層，隨後注入氮氣，一邊將真空度維持在 1〇_4托、一邊進行12〜20秒之蒸鍍，俟鍍上總厚度2 un之 氮化硼層後，再度將環境調至5X10-5托之真空，在24 0 0 〜260Q°C之溫度蒸鍍钛25〜30秒，在前述氮化硼層上鍍上 1〜2 ji π之欽層。 依本發明所得之蔭罩可藉氮化硼抑制變形，進而又由 (請先閲讀背面之注意事項再填寫本頁) 裝* 訂' 線· 本紙張尺度逍用中B «家樣準(CNS)甲4規格(210x297公*) 4 A 6 B6 L03143 五、發明説明（） 於波覆在氮化硼上之鈦層具有良好之導電性，可在前述薩 罩施加陰極電壓。 由以下之詳細説明當可更進一步瞭解本發明之目的及 優點。 首先，在一可提供與外部隔離之環境的一般蒸鍍器内 部懸垂供作被蒸鍍物之蔭罩.在料船（boat)上放入適當量 之硼後，將前述蒸鍍器之内部真空度維持於5Xl()a托。 其次，以電子束蒸鍍法在25 00〜2600¾下將硼加熱、 蒸鍍12〜20秒，此時所得層厚大約1 uni左右。 蒸鍍12〜20秒並短暫中止一般時間後，在蒸籁器内、部 注入氮氣，將真空度調整在10〃托之水準，再度於氮氣琛 境中進行12〜2 0秒之蒸鍍。 此時，注入之氮氣乃與硼反應而在蔭罩上鍍上氮化硼 層，在此過程中所得層厚亦為1 ,ϋΠ!左右，即抗起泡層.之總 厚度乃在2 *IID以内。 俟前述蒸鍍工程完畢後，將真空解除，蒸鍍材由硼換 成鈦後，再度將内部真空度調至5X1Q-5托並予以維持， 以2400〜26(3(TC之溫度將鈦加熱25〜30秒，在氮化硼上積 層1〜2 厚之鈦，卽得目的之蔭罩。 依本發明製得之蔭罩，可藉蒸鍍於其表面上之氮化硼 的低熱膨脹偽數積極抑制起泡，進而並由於積層於氮化硼 上之鈦層具有氮化硼層所無之高導電性，乃可施加蔭罩之 陰極電壓。 本發明之優點在於：比起以氮化硼陶瓷作為蒸鍍材之 本紙張尺度逍用中困國家樣準（CNS)甲4規格(210X297公«) (請先閱讀背面之注意事項再填寫本頁) 裝· 訂_ 經濟部中央標準局貝工消费合作社印製 5 L0314S _Be_ 五、發明説明（） 方法，可於顯著之較低溫度進行，因此實施非常容易。 進而，由於氪化硼之熱膨脹係數與氮化硼陶瓷相同， 因此與使用前述氮化硼陶瓷時相同，具有抑制蔭罩起泡變 形之效果。 (請先閲讀背面之注意事項再填寫本頁) 裝- 經濟部中央標準局員工消費合作社印製 本紙張尺度逍用中《 a家搮準(CNS)甲4規格(210X297公釐) 6

Claims (1)

  1. Α7 Β7 C7 D7 03143 六、申請專利範園 1. 一種蔭罩之抗起泡現象材料之蒸鍍方法，其特傲在於 :在真空度5X1 0 s托之環境下，使用硼作為蒸鍍材 料，以2500〜26 0(TC之蒸鍍溫度、12〜20秒之蒸鍍時 間於蔭罩表面蒸鍍，俟蒸鍍之硼層逹1 uni厚度後，注 入氮氣，將真空度調於ltr4托並加以維持，再度以硼 蒸鍍1 2〜2 0秒，俟前述蔭罩表面被覆總厚度2 U π左右 之氮化硼層，再度將真空度調於5X10〃托，一邊加 以維持、一邊以2400〜2600¾之蒸鍍溫度、25〜30 秒之蒸鍍時間在前述氮化硼層上被覆1〜2 Μη厚度之 鈦〇 2. 如申請專利範圍第1項之蔭罩之抗起泡現象材料之蒸 鍍方法，其待徵在於：氮化硼層及鈦層之被覆傜限於 由蔭罩朝向屏幕之反對方。 3 .如申請專利範圍第1項之蔭罩之抗起泡現象材料之蒸 鍍方法，其待徵在於氮化硼層至少被覆於蔭罩之内表 面。 - (請先W讀背面之注意事項再填寫本頁 j^:: 經濟部中央標準局員工消势合作社印製 •線. 7 本紙張尺度適用中國國家樣準（CfiS)甲4規格(210x297公釐)
TW080109924A 1990-12-22 1991-12-18 TW203143B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019900021547A KR920013558A (ko) 1990-12-22 1990-12-22 새도우마스크의 안티도우밍재 증착방법

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Publication Number Publication Date
TW203143B true TW203143B (zh) 1993-04-01

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US (1) US5433974A (zh)
EP (1) EP0492524B1 (zh)
JP (1) JP2977659B2 (zh)
KR (1) KR920013558A (zh)
DE (1) DE69125697T2 (zh)
TW (1) TW203143B (zh)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR970008278A (ko) * 1995-07-27 1997-02-24 윤종용 칼라 수상관용 새도우마스크와 그 제조방법
MY119142A (en) * 1996-02-12 2005-04-30 Samsung Display Devices Co Ltd Paste composition for screen printing of crt shadow mask and screen printing method using the same
DE69711851T2 (de) * 1996-10-11 2002-11-21 Koninkl Philips Electronics Nv Farbkathodenstrahlröhre und herstellungsverfahren einer farbauswahlelektrode
KR100274243B1 (ko) * 1998-01-22 2001-05-02 김순택 새도우 마스크 및 그의 제조방법

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US3794873A (en) * 1972-11-06 1974-02-26 Zenith Radio Corp Interchangeable shadow mask
US3809945A (en) * 1973-03-02 1974-05-07 Zenith Radio Corp Shadow mask for color cathode ray tube and method of manufacture thereof
DE3125075A1 (de) * 1980-07-16 1982-03-11 Naamloze Vennootschap Philips' Gloeilampenfabrieken, 5621 Eindhoven "farbbildroehre"
JPS6072143A (ja) * 1983-09-28 1985-04-24 Toshiba Corp カラ−受像管
US4734615A (en) * 1985-07-17 1988-03-29 Kabushiki Kaisha Toshiba Color cathode ray tube
US4668336A (en) * 1985-07-23 1987-05-26 Micronix Corporation Process for making a mask used in x-ray photolithography
US4680243A (en) * 1985-08-02 1987-07-14 Micronix Corporation Method for producing a mask for use in X-ray photolithography and resulting structure
JPH0685302B2 (ja) * 1985-10-28 1994-10-26 株式会社東芝 カラ−受像管
US4704094A (en) * 1985-12-09 1987-11-03 Tektronix, Inc. Cathode ray tube and method of manufacture
JPS62161952A (ja) * 1986-01-08 1987-07-17 Kobe Steel Ltd 立方晶窒化硼素薄膜の形成方法
JPS6364248A (ja) * 1986-09-05 1988-03-22 Hitachi Ltd カラ−受像管
US4904218A (en) * 1987-12-02 1990-02-27 Zenith Electronics Corporation Blackening of non-iron-based flat tensioned foil shadow masks
US4964145A (en) * 1989-07-24 1990-10-16 International Business Machines Corporation System for magnification correction of conductive X-ray lithography mask substrates
US4978421A (en) * 1989-11-13 1990-12-18 International Business Machines Corporation Monolithic silicon membrane device fabrication process

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Publication number Publication date
KR920013558A (ko) 1992-07-29
US5433974A (en) 1995-07-18
DE69125697T2 (de) 1997-12-04
EP0492524B1 (en) 1997-04-16
JPH04303537A (ja) 1992-10-27
EP0492524A3 (zh) 1995-07-12
EP0492524A2 (en) 1992-07-01
JP2977659B2 (ja) 1999-11-15
DE69125697D1 (de) 1997-05-22

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